JP6241415B2 - 接着剤、接着フィルム、半導体装置およびその製造方法 - Google Patents
接着剤、接着フィルム、半導体装置およびその製造方法 Download PDFInfo
- Publication number
- JP6241415B2 JP6241415B2 JP2014506632A JP2014506632A JP6241415B2 JP 6241415 B2 JP6241415 B2 JP 6241415B2 JP 2014506632 A JP2014506632 A JP 2014506632A JP 2014506632 A JP2014506632 A JP 2014506632A JP 6241415 B2 JP6241415 B2 JP 6241415B2
- Authority
- JP
- Japan
- Prior art keywords
- group
- different
- adhesive
- same
- molecule
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/321—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives
- H05K3/323—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives by applying an anisotropic conductive adhesive layer over an array of pads
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/01—Use of inorganic substances as compounding ingredients characterized by their specific function
- C08K3/013—Fillers, pigments or reinforcing additives
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L79/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen or carbon only, not provided for in groups C08L61/00 - C08L77/00
- C08L79/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
- C08L79/08—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L93/00—Compositions of natural resins; Compositions of derivatives thereof
- C08L93/04—Rosin
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J163/00—Adhesives based on epoxy resins; Adhesives based on derivatives of epoxy resins
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J179/00—Adhesives based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen, with or without oxygen, or carbon only, not provided for in groups C09J161/00 - C09J177/00
- C09J179/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
- C09J179/08—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J193/00—Adhesives based on natural resins; Adhesives based on derivatives thereof
- C09J193/04—Rosin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L24/80 - H01L24/90
- H01L24/92—Specific sequence of method steps
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/303—Surface mounted components, e.g. affixing before soldering, aligning means, spacing means
- H05K3/305—Affixing by adhesive
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2479/00—Presence of polyamine or polyimide
- C09J2479/08—Presence of polyamine or polyimide polyimide
- C09J2479/083—Presence of polyamine or polyimide polyimide in the primer coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/13138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/13144—Gold [Au] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/13138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/13147—Copper [Cu] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/27—Manufacturing methods
- H01L2224/27001—Involving a temporary auxiliary member not forming part of the manufacturing apparatus, e.g. removable or sacrificial coating, film or substrate
- H01L2224/27003—Involving a temporary auxiliary member not forming part of the manufacturing apparatus, e.g. removable or sacrificial coating, film or substrate for holding or transferring the layer preform
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/27—Manufacturing methods
- H01L2224/273—Manufacturing methods by local deposition of the material of the layer connector
- H01L2224/2733—Manufacturing methods by local deposition of the material of the layer connector in solid form
- H01L2224/27334—Manufacturing methods by local deposition of the material of the layer connector in solid form using preformed layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/27—Manufacturing methods
- H01L2224/274—Manufacturing methods by blanket deposition of the material of the layer connector
- H01L2224/2743—Manufacturing methods by blanket deposition of the material of the layer connector in solid form
- H01L2224/27436—Lamination of a preform, e.g. foil, sheet or layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/2919—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29199—Material of the matrix
- H01L2224/2929—Material of the matrix with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/29386—Base material with a principal constituent of the material being a non metallic, non metalloid inorganic material
- H01L2224/29387—Ceramics, e.g. crystalline carbides, nitrides or oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/731—Location prior to the connecting process
- H01L2224/73101—Location prior to the connecting process on the same surface
- H01L2224/73103—Bump and layer connectors
- H01L2224/73104—Bump and layer connectors the bump connector being embedded into the layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/8119—Arrangement of the bump connectors prior to mounting
- H01L2224/81191—Arrangement of the bump connectors prior to mounting wherein the bump connectors are disposed only on the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/812—Applying energy for connecting
- H01L2224/81201—Compression bonding
- H01L2224/81203—Thermocompression bonding, e.g. diffusion bonding, pressure joining, thermocompression welding or solid-state welding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/81905—Combinations of bonding methods provided for in at least two different groups from H01L2224/818 - H01L2224/81904
- H01L2224/81907—Intermediate bonding, i.e. intermediate bonding step for temporarily bonding the semiconductor or solid-state body, followed by at least a further bonding step
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8312—Aligning
- H01L2224/83121—Active alignment, i.e. by apparatus steering, e.g. optical alignment using marks or sensors
- H01L2224/83132—Active alignment, i.e. by apparatus steering, e.g. optical alignment using marks or sensors using marks formed outside the semiconductor or solid-state body, i.e. "off-chip"
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83191—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83193—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed on both the semiconductor or solid-state body and another item or body to be connected to the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/832—Applying energy for connecting
- H01L2224/83201—Compression bonding
- H01L2224/83203—Thermocompression bonding, e.g. diffusion bonding, pressure joining, thermocompression welding or solid-state welding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
- H01L2224/83855—Hardening the adhesive by curing, i.e. thermosetting
- H01L2224/83862—Heat curing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/83905—Combinations of bonding methods provided for in at least two different groups from H01L2224/838 - H01L2224/83904
- H01L2224/83907—Intermediate bonding, i.e. intermediate bonding step for temporarily bonding the semiconductor or solid-state body, followed by at least a further bonding step
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/83909—Post-treatment of the layer connector or bonding area
- H01L2224/83948—Thermal treatments, e.g. annealing, controlled cooling
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
- H01L2224/92—Specific sequence of method steps
- H01L2224/921—Connecting a surface with connectors of different types
- H01L2224/9211—Parallel connecting processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/94—Batch processes at wafer-level, i.e. with connecting carried out on a wafer comprising a plurality of undiced individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/27—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/94—Batch processes at wafer-level, i.e. with connecting carried out on a wafer comprising a plurality of undiced individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01008—Oxygen [O]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01014—Silicon [Si]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/06—Polymers
- H01L2924/0665—Epoxy resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/06—Polymers
- H01L2924/07—Polyamine or polyimide
- H01L2924/07025—Polyimide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
- H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
- H01L2924/15788—Glasses, e.g. amorphous oxides, nitrides or fluorides
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/01—Dielectrics
- H05K2201/0137—Materials
- H05K2201/0154—Polyimide
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
- H05K2201/10613—Details of electrical connections of non-printed components, e.g. special leads
- H05K2201/10954—Other details of electrical connections
- H05K2201/10977—Encapsulated connections
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/341—Surface mounted components
- H05K3/3431—Leadless components
- H05K3/3436—Leadless components having an array of bottom contacts, e.g. pad grid array or ball grid array components
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/3489—Composition of fluxes; Methods of application thereof; Other methods of activating the contact surfaces
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Organic Chemistry (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Polymers & Plastics (AREA)
- Health & Medical Sciences (AREA)
- Medicinal Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Wire Bonding (AREA)
- Adhesive Tapes (AREA)
Description
検出器:Waters996
システムコントローラー:Waters2690
カラムオーブン:Waters HTR−B
サーモコントローラー:Waters TCM
カラム:TOSOH guard column
カラム:TOSOH TSK−GEL α−4000
カラム:TOSOH TSK−GEL α−2500などが挙げられる。
乾燥窒素気流下、1,3−ビス(3−アミノフェノキシ)ベンゼン(以下、APB−Nとする)4.82g(0.0165モル)、3,3’−ジアミノ−4,4’−ジヒドロキシジフェニルスルホン(以下、ABPSとする)3.08g(0.011モル)、1,3−ビス(3−アミノプロピル)テトラメチルジシロキサン(以下、SiDAとする)4.97g(0.02モル)、および、末端封止剤として3−アミノフェノール0.55g(0.005モル)をN−メチルピロリドン(以下、NMPとする)130gに溶解した。ここに2,2−ビス{4−(3,4−ジカルボキシフェノキシ)フェニル}プロパン二無水物(以下、BSAAとする)26.02g(0.05モル)をNMP20gとともに加えて、25℃で1時間反応させ、次いで50℃で4時間撹拌した。その後、180℃で5時間撹拌した。撹拌終了後、溶液を水3Lに投入し、ろ過して沈殿を回収し、水で3回洗浄した後、真空乾燥機を用いて80℃20時間乾燥した。得られたポリマー固体の赤外吸収スペクトルを測定したところ、1780cm−1付近、1377cm−1付近にポリイミドに起因するイミド構造の吸収ピークが検出された。このようにして末端および側鎖にフェノール性水酸基を有し、一般式(1)で表される構造が11.5質量%含まれるポリイミドAを得た。4gのポリイミドAにテトラヒドロフラン6gを加え、23℃で撹拌したところ溶解した。
乾燥窒素気流下、APB−N 4.82g(0.0165モル)、ABPS 3.08g(0.011モル)、SiDA 4.97g(0.02モル)、および、末端封止剤としてアニリン0.47g(0.005モル)をNMP130gに溶解した。ここにBSAA 26.02g(0.05モル)をNMP20gとともに加えて、25℃で1時間反応させ、次いで50℃で4時間撹拌した。その後、180℃で5時間撹拌した。撹拌終了後、溶液を水3Lに投入し、ろ過して沈殿を回収し、水で3回洗浄した後、真空乾燥機を用いて80℃20時間乾燥した。得られたポリマー固体の赤外吸収スペクトルを測定したところ、1780cm−1付近、1377cm−1付近にポリイミドに起因するイミド構造の吸収ピークが検出された。このようにして側鎖にフェノール性水酸基を有し、一般式(1)で表される構造が11.6質量%含まれるポリイミドBを得た。4gのポリイミドBにテトラヒドロフラン6gを加え、23℃で撹拌したところ溶解した。
乾燥窒素気流下、2,2−ビス(3−アミノ−4−ヒドロキシフェニル)ヘキサフルオロプロパン(以下、BAHFとする)24.54g(0.067モル)、SiDA4.97g(0.02モル)、および、末端封止剤として、アニリン1.86g(0.02モル)をNMP80gに溶解させた。ここにビス(3,4−ジカルボキシフェニル)エーテル二無水物(以下、ODPAとする)31.02g(0.1モル)をNMP20gとともに加えて、20℃で1時間反応させ、次いで50℃で4時間撹拌した。その後、キシレンを15g添加し、水をキシレンとともに共沸させながら、180℃で5時間攪拌した。攪拌終了後、溶液を水3Lに投入して白色沈殿したポリマーを得た。この沈殿をろ過して回収し、水で3回洗浄した後、真空乾燥機を用いて80℃、20時間乾燥した。得られたポリマー固体の赤外吸収スペクトルを測定したところ、1780cm−1付近、1377cm−1付近にポリイミドに起因するイミド構造の吸収ピークが検出された。このようにして側鎖にフェノール性の水酸基を有し、一般式(1)で表される構造が7.5質量%含まれるポリイミドCを得た。4gのポリイミドCにテトラヒドロフラン6gを加え、23℃で撹拌したところ溶解した。
乾燥窒素気流下、APB−N 8.03g(0.0275モル)、SiDA 4.97g(0.02モル)、および、末端封止剤としてアニリン0.47g(0.005モル)をNMP130gに溶解した。ここにBSAA 26.02g(0.05モル)をNMP20gとともに加えて、25℃で1時間反応させ、次いで50℃で4時間撹拌した。その後、180℃で5時間撹拌した。撹拌終了後、溶液を水3Lに投入し、ろ過して沈殿を回収し、水で3回洗浄した後、真空乾燥機を用いて80℃20時間乾燥した。得られたポリマー固体の赤外吸収スペクトルを測定したところ、1780cm−1付近、1377cm−1付近にポリイミドに起因するイミド構造の吸収ピークが検出された。このようにして一般式(1)で表される構造が11.6質量%含まれるポリイミドDを得た。4gのポリイミドDにテトラヒドロフラン6gを加え、23℃で撹拌したところ溶解した。
固形エポキシ化合物
N865(商品名、エポキシ当量:200g/eq、大日本インキ化学工業(株)製)
液状エポキシ化合物
YL980(商品名、185g/eq、三菱化学(株)製)。
KE−604(商品名、酸価240(KOHmg/g)、軟化点130℃、色調150ハーゼン、アクリル変性ロジン、荒川化学工業(株)製)。
KR−120(商品名、酸価320(KOHmg/g)、軟化点120℃、色調150ハーゼン、荒川化学工業(株)製)。
ノバキュア(登録商標)HXA−3941HP(商品名、旭化成イーマテリアルズ(株)製)中に含まれる液状エポキシ化合物。ノバキュア(登録商標)HXA−3941HPは、マイクロカプセル型硬化剤/液状エポキシ化合物が1/2であり、含まれる液状エポキシ化合物は、ビスフェノールA型エポキシ化合物/ビスフェノールF型エポキシ化合物=1/4である。表中のノバキュア(登録商標)HXA−3941HP記載の質量部において、括弧内に記載した量がマイクロカプセルとしての質量部を示す。
SO−E2(商品名、アドマテックス(株)製、球形シリカ粒子、平均粒子径0.5μm)
(f)溶剤:メチルイソブチルケトン(以下、MIBKとする)
(g)ロジン
KR−85(商品名、酸価175(KOHmg/g)、軟化点85℃、色調60ハーゼン、荒川化学工業(株)製)。
(1)接着剤フィルムの作製方法
表1〜4に示される(a)〜(f)成分を表に記載の組成比で混合して、接着剤ワニスを作製した。作製した接着剤ワニスを、スリットダイコーター(塗工機)を用いて、剥離性基材である厚さ50μmのポリエステルテレフタレートフィルム(商品名、セラピール(登録商標)HP2(U))の表面処理面に塗布し、80℃で10分間乾燥を行った。これにより得られた乾燥後の厚みが50μmの接着剤フィルム上に別の剥離性基材として厚さ10μmのポリプロピレンフィルム(商品名、トレファン(登録商標)BO型番YK57、片面コロナ放電処理品)の未処理面をラミネートした後、外径9.6cmの紙管上に剥離性基材HP2(U)が外側になるようロール状に巻き取り、接着剤フィルムの両面に剥離性基材を有するシートの原反を得た。次に該シート原反をフィルムスリッターを用いて7.5mm幅にスリットし、外径5.0cmのリール上に剥離性基材HP2(U)が外側になるようロール状に巻き取り、両面に剥離性基材を有する接着剤フィルムの巻重体を得た。得られた巻重体は即時に(2)以降の工程を行ったものと、23℃、55%RHの環境下で1ヶ月間および3ヶ月間それぞれ保管した後に(2)以降の工程を行ったものにわけ、保存条件の異なる巻重体について評価した。
テープ貼り合わせ装置(東レエンジニアリング(株)製、DA2000)を用いて、接着剤フィルムの回路基板への貼り付けを行った。まず、(1)の工程により得られた、両面に剥離性基材を有する接着剤フィルムの巻重体から、剥離性基材YK57を除去し、接着剤フィルムを露出させた。次いで、ステージ上に固定された回路基板(無垢銅パッド電極、7.5mm角の半導体チップが300個搭載可能な回路付きのガラスエポキシ基板)に、剥離性基材YK57を剥離した後の接着剤フィルムの、接着剤フィルム面を温度80℃、1秒間の条件で貼りあわせた後、剥離性基材HP2(U)を除去した。この貼り付け工程を繰り返し行い、7.5mm角の大きさの接着剤フィルムが300カ所に貼り付けられた回路基板を得た。
(2)で作製した接着剤付き回路基板を80℃で1時間乾燥処理を行った。次いで、フリップチップボンディング装置(東レエンジニアリング(株)製、FC−2000)を用いて、接着剤付き回路基板上に半導体チップのフリップチップボンディングを行った。半導体チップ(銅30μm+鉛フリーハンダ15μmからなるバンプ電極付き、448バンプ/チップ、ピッチ60μm、ペリフェラル配置、7.5mm角チップ)を80℃に加熱されたボンディングステージに固定し、温度80℃、圧力15N/チップ、時間5秒の条件で、前記接着剤付き回路基板に仮圧着したのち、温度250℃、圧力200N/チップの条件で時間を10秒にして本圧着を行った。1カ所のボンディングが終了したら、次のボンディングへと繰り返し行うことにより、300カ所すべての場所に半導体チップのボンディングを行った。なお、ボンディング開始から終了までにかかった時間は60分であった。ボンディングを終了した回路基板を基板切断装置で分割することにより、半導体付き回路基板を300個作製した。なお、得られた半導体付き回路基板は、半導体チップと回路基板が両者の接続によりデイジーチェーンを構成するものである。作製した各半導体付き回路基板を液晶基板に組み込むことにより、液晶パネル(半導体装置)を作製し、表示テストを行った。表示されたものは合格、チップと回路基板間の接続不良の発生により表示されないものは不合格と判定した。300個の液晶パネルについて表示テストを行い、合格するものの割合が99.5%以上をA、95.0%以上〜99.5%未満をB、95.0%未満をCとした。結果を表1〜表4に示す(信頼性試験前)。
(3)の液晶表示テストで合格した半導体付き回路基板20個を85℃、60%RHの条件の恒温恒湿槽中に168時間放置して吸湿させた。その後、260℃、5秒のリフロー条件で半田リフローを行った(吸湿リフロー処理)。続いて半導体付き回路基板を−40℃で5分間維持後、125℃で5分間維持を1サイクルとして、この処理を10個のサンプルについては1000サイクル、残りの10個のサンプルについては2000サイクル、それぞれ繰り返した。これらの処理の後、半導体付き回路基板を液晶基板に組み込むことにより、液晶パネルを作製し、表示テストを行った。1000サイクル後、2000サイクル後の各々のサンプルについて、10個すべてについて表示されたものはA、接続不良の発生により1個でも表示されないものはCとした。結果を表1〜表4に示す(信頼性試験後/1000サイクル、2000サイクル)。
(1)の工程において、23℃、55%RHの環境下で1ヶ月および3ヶ月間それぞれ保管した接着剤フィルムについて、溶融粘度を以下の条件で測定を行った。最低溶融粘度が100Pa・s以上、10000Pa・s以下の場合、Aと評価し、それ以外をCと評価した。
動的粘弾性測定装置:MCR−302(アントンパール・ジャパン(株)製)、
試料寸法:直径15mm、厚さ0.8mm
昇温速度:2℃/分、
測定周波数:1Hz、
測定ひずみ:9%、
測定温度範囲0℃から150℃。
有機溶剤可溶性ポリイミドBを有機溶剤可溶性ポリイミドCに変更した以外は実施例8〜14、22〜30、比較例3、4、7、8と同様に接着剤を作製し評価を行ったところ、それぞれ実施例8〜14、22〜30、比較例3、4、7、8の液晶表示テストの評価結果と同様の結果を得た。
潜在性硬化剤の酸変性ロジンKE−604を酸変性ロジンKR−120に変更した以外は実施例1〜30と同様に半導体用接着剤を作製し評価を行ったところ、それぞれ実施例1〜30の液晶表示テストの評価結果と同様の結果を得た。
表5に示される(a)〜(f)成分について表5に示す配合比になるよう調合し、実施例1と同様に接着剤を作製し評価を行ったところ、表5の液晶表示テストの評価結果を得た。
Claims (8)
- (a)ポリイミド、(b)エポキシ化合物、(c)酸変性ロジンおよび(c’)塩基性の潜在性硬化剤を含有し、(c)酸変性ロジンの含有量が(b)エポキシ化合物100質量部に対し5質量部以上、30質量部以下である接着剤。
- (a)ポリイミドが一般式(2)または一般式(3)で表される構造を有し、かつ一般式(1)で表される構造を一般式(2)または一般式(3)中のR4として、ポリマー全量に対し5〜15質量%含有するポリマーである請求項1記載の接着剤;
- (a)ポリイミドが一般式(3)で表される構造を有し、かつ一般式(1)で表される構造を一般式(3)中のR4として、ポリマー全量に対し5〜15質量%含有するポリマーである請求項1記載の接着剤;
- さらに(d)無機粒子を含有し、(a)〜(d)の全量に対し、(d)無機粒子の含有量が30〜80質量%である請求項1〜3のいずれか記載の接着剤。
- 請求項1〜4のいずれか記載の接着剤からなる接着剤フィルム。
- 23℃、55%RHの環境下に1ヶ月保管後の最低溶融粘度が100〜10000Pa・sの範囲内である請求項5記載の接着剤フィルム
- 請求項1〜4のいずれか記載の接着剤の硬化物または請求項5もしくは6記載の接着剤フィルムの硬化物を含む半導体装置。
- 第一の回路部材と第二の回路部材の間に請求項1〜4のいずれか記載の接着剤または請求項5もしくは6記載の接着剤フィルムを介在させ、加熱加圧により前記第一の回路部材と前記第二の回路部材を電気的に接続する半導体装置の製造方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012283937 | 2012-12-27 | ||
JP2012283937 | 2012-12-27 | ||
PCT/JP2013/082559 WO2014103637A1 (ja) | 2012-12-27 | 2013-12-04 | 接着剤、接着フィルム、半導体装置およびその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2014103637A1 JPWO2014103637A1 (ja) | 2017-01-12 |
JP6241415B2 true JP6241415B2 (ja) | 2017-12-06 |
Family
ID=51020731
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014506632A Active JP6241415B2 (ja) | 2012-12-27 | 2013-12-04 | 接着剤、接着フィルム、半導体装置およびその製造方法 |
Country Status (8)
Country | Link |
---|---|
US (1) | US9591768B2 (ja) |
EP (1) | EP2940094A4 (ja) |
JP (1) | JP6241415B2 (ja) |
KR (1) | KR102220124B1 (ja) |
CN (1) | CN104870595B (ja) |
SG (1) | SG11201505053XA (ja) |
TW (1) | TWI640593B (ja) |
WO (1) | WO2014103637A1 (ja) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6589638B2 (ja) * | 2014-12-08 | 2019-10-16 | 東レ株式会社 | 接着剤組成物、その硬化物を含む半導体装置およびそれを用いた半導体装置の製造方法 |
US10678958B2 (en) | 2015-12-28 | 2020-06-09 | Intelligent Technologies International, Inc. | Intrusion-protected memory component |
JP6716939B2 (ja) * | 2016-02-16 | 2020-07-01 | 東レ株式会社 | 接着剤、それからなる接着フィルム、それらの硬化物を含む半導体装置およびその製造方法 |
CN105820338A (zh) * | 2016-04-25 | 2016-08-03 | 全球能源互联网研究院 | 一种聚酰亚胺及其制备方法 |
TWI634182B (zh) * | 2017-07-03 | 2018-09-01 | 台虹科技股份有限公司 | 接著劑組成物 |
JP7210031B2 (ja) * | 2017-11-27 | 2023-01-23 | ナミックス株式会社 | フィルム状半導体封止材 |
JP2019147707A (ja) * | 2018-02-27 | 2019-09-05 | 積水化学工業株式会社 | 合わせガラス用中間膜及び合わせガラス |
CN111989769B (zh) * | 2018-04-16 | 2021-07-13 | 住友电木株式会社 | 电子装置的制造方法 |
EP3780094A4 (en) * | 2019-01-29 | 2022-03-30 | Lg Chem, Ltd. | SEMICONDUCTOR PACKAGE MANUFACTURING METHOD |
KR102480379B1 (ko) | 2019-01-29 | 2022-12-23 | 주식회사 엘지화학 | 반도체 패키지의 제조방법 |
JP7241569B2 (ja) * | 2019-03-04 | 2023-03-17 | 太陽ホールディングス株式会社 | 硬化性樹脂組成物、ドライフィルム又はプリプレグ、硬化物、及び、配線板 |
JP7275996B2 (ja) * | 2019-08-26 | 2023-05-18 | 東レ株式会社 | 熱硬化接着剤シート、半導体装置および半導体装置の製造方法 |
WO2024058061A1 (ja) * | 2022-09-16 | 2024-03-21 | 三菱瓦斯化学株式会社 | ポリイミド樹脂、ポリイミドワニス、ポリイミドフィルム及び仮固定材組成物 |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08319466A (ja) * | 1995-03-20 | 1996-12-03 | Fujitsu Ltd | 接着剤、半導体装置及びその製造方法 |
JP2000144082A (ja) | 1998-11-16 | 2000-05-26 | Minnesota Mining & Mfg Co <3M> | 熱硬化性接着剤組成物、接着剤、および接着剤の製造方法 |
JP2001219294A (ja) | 1999-12-03 | 2001-08-14 | Tdk Corp | 熱硬化性はんだ付け用フラックスおよびはんだ付け方法 |
JP2006144022A (ja) | 2002-06-26 | 2006-06-08 | Hitachi Chem Co Ltd | フィルム状接着剤、接着シート及び半導体装置 |
US7358289B2 (en) | 2002-10-22 | 2008-04-15 | 3M Innovative Properties Company | Heat-curable adhesive composition |
JP4211569B2 (ja) * | 2002-12-16 | 2009-01-21 | 宇部興産株式会社 | ポリイミドシロキサン絶縁膜用組成物、絶縁膜、および、絶縁膜の形成方法 |
US20040132888A1 (en) | 2002-12-16 | 2004-07-08 | Ube Industries, Ltd. | Electronic device packaging and curable resin composition |
JP2004319823A (ja) * | 2003-04-17 | 2004-11-11 | Sumitomo Bakelite Co Ltd | 半導体用接着フィルム、半導体装置、及び半導体装置の製造方法。 |
JP4383768B2 (ja) * | 2003-04-23 | 2009-12-16 | スリーエム イノベイティブ プロパティズ カンパニー | 封止用フィルム接着剤、封止用フィルム積層体及び封止方法 |
TWI304835B (en) | 2003-06-10 | 2009-01-01 | Hitachi Chemical Co Ltd | Film adhesive and manufacturing method thereof,adhesive sheet and semiconductor device |
JP3797990B2 (ja) | 2003-08-08 | 2006-07-19 | 株式会社東芝 | 熱硬化性フラックス及びはんだペースト |
JP3948491B2 (ja) | 2005-06-06 | 2007-07-25 | 東レ株式会社 | 半導体用接着組成物、それを用いた半導体装置および半導体装置の製造方法 |
JP2007112908A (ja) | 2005-10-20 | 2007-05-10 | Hitachi Chem Co Ltd | 酸変性ポリエステルイミド樹脂、感光性樹脂組成物、レジストパターンの形成方法、プリント配線板及び半導体素子。 |
JP5040247B2 (ja) * | 2006-10-06 | 2012-10-03 | 東レ株式会社 | 半導体用接着組成物、それを用いた半導体装置および半導体装置の製造方法 |
JP5141366B2 (ja) | 2008-05-14 | 2013-02-13 | 東レ株式会社 | 半導体用接着フィルムおよびこれを用いた半導体装置の製造方法 |
JP5477944B2 (ja) * | 2009-04-03 | 2014-04-23 | 日東電工株式会社 | 粘着製品 |
EP2452964A4 (en) * | 2009-07-10 | 2014-06-11 | Toray Industries | LAYER COMPOSITION, ADHESIVE, PCB AND SEMICONDUCTOR DEVICE THEREFORE MADE AND MANUFACTURING METHOD THEREFOR |
JP5853704B2 (ja) | 2010-12-01 | 2016-02-09 | 東レ株式会社 | 接着剤組成物、接着剤シートおよびこれらを用いた半導体装置 |
-
2013
- 2013-12-04 SG SG11201505053XA patent/SG11201505053XA/en unknown
- 2013-12-04 US US14/647,178 patent/US9591768B2/en active Active
- 2013-12-04 WO PCT/JP2013/082559 patent/WO2014103637A1/ja active Application Filing
- 2013-12-04 JP JP2014506632A patent/JP6241415B2/ja active Active
- 2013-12-04 KR KR1020157018727A patent/KR102220124B1/ko active IP Right Grant
- 2013-12-04 EP EP13867003.9A patent/EP2940094A4/en not_active Withdrawn
- 2013-12-04 CN CN201380068190.4A patent/CN104870595B/zh active Active
- 2013-12-17 TW TW102146488A patent/TWI640593B/zh active
Also Published As
Publication number | Publication date |
---|---|
CN104870595A (zh) | 2015-08-26 |
EP2940094A4 (en) | 2016-08-10 |
US20150315436A1 (en) | 2015-11-05 |
SG11201505053XA (en) | 2015-07-30 |
KR102220124B1 (ko) | 2021-02-25 |
EP2940094A1 (en) | 2015-11-04 |
US9591768B2 (en) | 2017-03-07 |
TW201430087A (zh) | 2014-08-01 |
TWI640593B (zh) | 2018-11-11 |
JPWO2014103637A1 (ja) | 2017-01-12 |
KR20150100727A (ko) | 2015-09-02 |
CN104870595B (zh) | 2017-06-23 |
WO2014103637A1 (ja) | 2014-07-03 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6241415B2 (ja) | 接着剤、接着フィルム、半導体装置およびその製造方法 | |
JP5740979B2 (ja) | 接着組成物、接着シート、それらを用いた回路基板および半導体装置ならびにそれらの製造方法 | |
JP6528404B2 (ja) | 半導体用樹脂組成物および半導体用樹脂フィルムならびにこれらを用いた半導体装置 | |
JP3948491B2 (ja) | 半導体用接着組成物、それを用いた半導体装置および半導体装置の製造方法 | |
JP5040247B2 (ja) | 半導体用接着組成物、それを用いた半導体装置および半導体装置の製造方法 | |
JP6040935B2 (ja) | 樹脂組成物、樹脂組成物シート、半導体装置およびその製造方法 | |
TWI608066B (zh) | 樹脂組成物、樹脂片及其製造方法、以及半導體裝置的製造方法 | |
JP2013197441A (ja) | 硬化物層付き回路基板の製造方法 | |
JP2015209477A (ja) | 半導体実装用樹脂組成物およびそれからなる半導体実装用樹脂組成物シートならびにそれらを用いた半導体装置およびその製造方法 | |
JP5040252B2 (ja) | 半導体用接着組成物、それを用いた半導体装置および半導体装置の製造方法。 | |
JP6112013B2 (ja) | バンプ電極付き半導体装置製造用接着剤シートおよび半導体装置の製造方法 | |
JP6716939B2 (ja) | 接着剤、それからなる接着フィルム、それらの硬化物を含む半導体装置およびその製造方法 | |
JP5103870B2 (ja) | 半導体用接着組成物、それを用いた半導体装置および半導体装置の製造方法 | |
WO2015107990A1 (ja) | 接着組成物ならびにそれを有する接着フィルム、接着組成物付き基板、半導体装置およびその製造方法 | |
JP2009021562A (ja) | 半導体用接着シート、それを用いた半導体装置および半導体装置の製造方法 | |
JP2014067789A (ja) | 未硬化接着剤層付配線基板および半導体装置の製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20170620 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20170810 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20171010 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20171023 |
|
R151 | Written notification of patent or utility model registration |
Ref document number: 6241415 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R151 |