JP6238149B2 - 新規な化合物半導体及びその活用 - Google Patents

新規な化合物半導体及びその活用 Download PDF

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Publication number
JP6238149B2
JP6238149B2 JP2016534149A JP2016534149A JP6238149B2 JP 6238149 B2 JP6238149 B2 JP 6238149B2 JP 2016534149 A JP2016534149 A JP 2016534149A JP 2016534149 A JP2016534149 A JP 2016534149A JP 6238149 B2 JP6238149 B2 JP 6238149B2
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compound semiconductor
group
elements
compound
thermoelectric conversion
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Japanese (ja)
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JP2017507872A5 (enExample
JP2017507872A (ja
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オ−ジョン・クウォン
テ−フン・キム
チョル−ヒ・パク
キョン−ムン・コ
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LG Chem Ltd
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LG Chem Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H10N10/853—Thermoelectric active materials comprising inorganic compositions comprising arsenic, antimony or bismuth
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B19/00—Selenium; Tellurium; Compounds thereof
    • C01B19/002—Compounds containing, besides selenium or tellurium, more than one other element, with -O- and -OH not being considered as anions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H10N10/852—Thermoelectric active materials comprising inorganic compositions comprising tellurium, selenium or sulfur
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/40—Electric properties
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

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  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Compositions Of Oxide Ceramics (AREA)
JP2016534149A 2013-11-29 2014-11-28 新規な化合物半導体及びその活用 Active JP6238149B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR1020130147674A KR101626933B1 (ko) 2013-11-29 2013-11-29 신규한 화합물 반도체 및 그 활용
KR10-2013-0147674 2013-11-29
PCT/KR2014/011587 WO2015080527A1 (ko) 2013-11-29 2014-11-28 신규한 화합물 반도체 및 그 활용

Publications (3)

Publication Number Publication Date
JP2017507872A JP2017507872A (ja) 2017-03-23
JP2017507872A5 JP2017507872A5 (enExample) 2017-10-19
JP6238149B2 true JP6238149B2 (ja) 2017-11-29

Family

ID=53199403

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016534149A Active JP6238149B2 (ja) 2013-11-29 2014-11-28 新規な化合物半導体及びその活用

Country Status (5)

Country Link
US (1) US10134970B2 (enExample)
EP (1) EP3073535B1 (enExample)
JP (1) JP6238149B2 (enExample)
KR (1) KR101626933B1 (enExample)
WO (1) WO2015080527A1 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102049009B1 (ko) * 2015-09-25 2019-11-26 주식회사 엘지화학 신규한 화합물 반도체 및 그 활용
CN108511587B (zh) * 2018-01-24 2021-05-18 宁波工程学院 一种铜过量的P-型Cu3.9Ga4.2Te8基中温热电材料及其制备工艺
WO2019171915A1 (ja) * 2018-03-08 2019-09-12 住友電気工業株式会社 熱電材料素子、発電装置、光センサおよび熱電材料の製造方法
CN109273584B (zh) * 2018-07-16 2022-06-28 永康市天峰工具有限公司 一种汽车尾气温差发电装置用热电材料及发电装置
CN110265540B (zh) * 2019-05-31 2022-07-08 上海大学 钡铜碲基p型热电材料及其制备方法
CN112723874B (zh) * 2021-01-18 2022-07-08 武汉理工大学 一种优化BiCuSeO基热电材料性能的方法及其织构助剂
CN115818583B (zh) * 2021-09-18 2024-05-07 中国科学院理化技术研究所 钨碲酸镉化合物和钨碲酸镉非线性光学晶体及其制备方法和应用
CN115636668B (zh) * 2022-11-21 2023-07-28 安徽大学 一种位错增强型BiCuSeO基热电材料及其制备方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003179243A (ja) 2001-08-31 2003-06-27 Basf Ag 光電池活性材料およびこれを含む電池
US7166796B2 (en) 2001-09-06 2007-01-23 Nicolaou Michael C Method for producing a device for direct thermoelectric energy conversion
AU2003248131A1 (en) 2002-07-29 2004-02-16 National Institute Of Advanced Industrial Science And Technology Thermoelectric transformation material containing nitrogen
JP4900061B2 (ja) * 2007-06-06 2012-03-21 トヨタ自動車株式会社 熱電変換素子及びその製造方法
EP2319082B1 (en) 2008-08-29 2017-11-15 LG Chem, Ltd. New compound semiconductor and producing method thereof, and solar cell and thermoelectric conversion element using the same
CN101942577A (zh) * 2009-07-10 2011-01-12 中国科学院上海硅酸盐研究所 热电复合材料及其制备方法
US8512463B2 (en) 2011-04-05 2013-08-20 E I Du Pont De Nemours And Company Thick film paste containing bismuth-tellurium-oxide and its use in the manufacture of semiconductor devices
US9547665B2 (en) 2011-10-27 2017-01-17 Microsoft Technology Licensing, Llc Techniques to determine network storage for sharing media files
TWI500170B (zh) 2011-11-22 2015-09-11 Lu Chung Hsin 製造摻雜Ｂｉ之IB-IIIA-VIA化合物之光吸收層的方法與包含其之太陽能電池
US8641917B2 (en) 2011-12-01 2014-02-04 Toyota Motor Engineering & Manufacturing North America, Inc. Ternary thermoelectric material containing nanoparticles and process for producing the same
KR20130126035A (ko) * 2012-05-10 2013-11-20 삼성전자주식회사 왜곡된 전자 상태 밀도를 갖는 열전소재, 이를 포함하는 열전모듈과 열전 장치
EP2958156B1 (en) * 2013-10-04 2018-04-04 LG Chem, Ltd. Novel compound semiconductor and use thereof

Also Published As

Publication number Publication date
WO2015080527A1 (ko) 2015-06-04
EP3073535A1 (en) 2016-09-28
KR20150062723A (ko) 2015-06-08
EP3073535A4 (en) 2017-06-21
JP2017507872A (ja) 2017-03-23
EP3073535B1 (en) 2019-03-27
US20170170379A1 (en) 2017-06-15
KR101626933B1 (ko) 2016-06-02
US10134970B2 (en) 2018-11-20

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