KR101626933B1 - 신규한 화합물 반도체 및 그 활용 - Google Patents

신규한 화합물 반도체 및 그 활용 Download PDF

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KR101626933B1
KR101626933B1 KR1020130147674A KR20130147674A KR101626933B1 KR 101626933 B1 KR101626933 B1 KR 101626933B1 KR 1020130147674 A KR1020130147674 A KR 1020130147674A KR 20130147674 A KR20130147674 A KR 20130147674A KR 101626933 B1 KR101626933 B1 KR 101626933B1
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compound semiconductor
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compound
mixture
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Korean (ko)
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KR20150062723A (ko
Inventor
권오정
고경문
김태훈
박철희
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주식회사 엘지화학
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Priority to KR1020130147674A priority Critical patent/KR101626933B1/ko
Priority to PCT/KR2014/011587 priority patent/WO2015080527A1/ko
Priority to JP2016534149A priority patent/JP6238149B2/ja
Priority to US15/039,020 priority patent/US10134970B2/en
Priority to EP14865588.9A priority patent/EP3073535B1/en
Publication of KR20150062723A publication Critical patent/KR20150062723A/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B19/00—Selenium; Tellurium; Compounds thereof
    • C01B19/002—Compounds containing, besides selenium or tellurium, more than one other element, with -O- and -OH not being considered as anions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H10N10/852—Thermoelectric active materials comprising inorganic compositions comprising tellurium, selenium or sulfur
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H10N10/853—Thermoelectric active materials comprising inorganic compositions comprising arsenic, antimony or bismuth
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/40—Electric properties
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

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  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Compositions Of Oxide Ceramics (AREA)
KR1020130147674A 2013-11-29 2013-11-29 신규한 화합물 반도체 및 그 활용 Active KR101626933B1 (ko)

Priority Applications (5)

Application Number Priority Date Filing Date Title
KR1020130147674A KR101626933B1 (ko) 2013-11-29 2013-11-29 신규한 화합물 반도체 및 그 활용
PCT/KR2014/011587 WO2015080527A1 (ko) 2013-11-29 2014-11-28 신규한 화합물 반도체 및 그 활용
JP2016534149A JP6238149B2 (ja) 2013-11-29 2014-11-28 新規な化合物半導体及びその活用
US15/039,020 US10134970B2 (en) 2013-11-29 2014-11-28 Compound semiconductor and application thereof
EP14865588.9A EP3073535B1 (en) 2013-11-29 2014-11-28 Novel compound semiconductor and application thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020130147674A KR101626933B1 (ko) 2013-11-29 2013-11-29 신규한 화합물 반도체 및 그 활용

Publications (2)

Publication Number Publication Date
KR20150062723A KR20150062723A (ko) 2015-06-08
KR101626933B1 true KR101626933B1 (ko) 2016-06-02

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KR1020130147674A Active KR101626933B1 (ko) 2013-11-29 2013-11-29 신규한 화합물 반도체 및 그 활용

Country Status (5)

Country Link
US (1) US10134970B2 (enExample)
EP (1) EP3073535B1 (enExample)
JP (1) JP6238149B2 (enExample)
KR (1) KR101626933B1 (enExample)
WO (1) WO2015080527A1 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102049009B1 (ko) * 2015-09-25 2019-11-26 주식회사 엘지화학 신규한 화합물 반도체 및 그 활용
CN108511587B (zh) * 2018-01-24 2021-05-18 宁波工程学院 一种铜过量的P-型Cu3.9Ga4.2Te8基中温热电材料及其制备工艺
WO2019171915A1 (ja) * 2018-03-08 2019-09-12 住友電気工業株式会社 熱電材料素子、発電装置、光センサおよび熱電材料の製造方法
CN109273584B (zh) * 2018-07-16 2022-06-28 永康市天峰工具有限公司 一种汽车尾气温差发电装置用热电材料及发电装置
CN110265540B (zh) * 2019-05-31 2022-07-08 上海大学 钡铜碲基p型热电材料及其制备方法
CN112723874B (zh) * 2021-01-18 2022-07-08 武汉理工大学 一种优化BiCuSeO基热电材料性能的方法及其织构助剂
CN115818583B (zh) * 2021-09-18 2024-05-07 中国科学院理化技术研究所 钨碲酸镉化合物和钨碲酸镉非线性光学晶体及其制备方法和应用
CN115636668B (zh) * 2022-11-21 2023-07-28 安徽大学 一种位错增强型BiCuSeO基热电材料及其制备方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090184295A1 (en) 2002-07-29 2009-07-23 Shigeo Yamaguchi Thermoelectric transportation material containing nitrogen
KR101128304B1 (ko) 2008-08-29 2012-03-23 주식회사 엘지화학 신규한 열전 변환 재료 및 그 제조 방법과, 이를 이용한 열전 변환 소자
US20130110892A1 (en) 2011-10-27 2013-05-02 Microsoft Corporation Techniques to determine network storage for sharing media files
US20130140507A1 (en) 2011-12-01 2013-06-06 Toyota Motor Engin. & Manufact. N.A. (TEMA) Ternary thermoelectric material containing nanoparticles and process for producing the same

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003179243A (ja) 2001-08-31 2003-06-27 Basf Ag 光電池活性材料およびこれを含む電池
US7166796B2 (en) 2001-09-06 2007-01-23 Nicolaou Michael C Method for producing a device for direct thermoelectric energy conversion
JP4900061B2 (ja) * 2007-06-06 2012-03-21 トヨタ自動車株式会社 熱電変換素子及びその製造方法
CN101942577A (zh) * 2009-07-10 2011-01-12 中国科学院上海硅酸盐研究所 热电复合材料及其制备方法
US8512463B2 (en) 2011-04-05 2013-08-20 E I Du Pont De Nemours And Company Thick film paste containing bismuth-tellurium-oxide and its use in the manufacture of semiconductor devices
TWI500170B (zh) 2011-11-22 2015-09-11 Lu Chung Hsin 製造摻雜Ｂｉ之IB-IIIA-VIA化合物之光吸收層的方法與包含其之太陽能電池
KR20130126035A (ko) * 2012-05-10 2013-11-20 삼성전자주식회사 왜곡된 전자 상태 밀도를 갖는 열전소재, 이를 포함하는 열전모듈과 열전 장치
EP2958156B1 (en) * 2013-10-04 2018-04-04 LG Chem, Ltd. Novel compound semiconductor and use thereof

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090184295A1 (en) 2002-07-29 2009-07-23 Shigeo Yamaguchi Thermoelectric transportation material containing nitrogen
KR101128304B1 (ko) 2008-08-29 2012-03-23 주식회사 엘지화학 신규한 열전 변환 재료 및 그 제조 방법과, 이를 이용한 열전 변환 소자
US20130110892A1 (en) 2011-10-27 2013-05-02 Microsoft Corporation Techniques to determine network storage for sharing media files
US20130140507A1 (en) 2011-12-01 2013-06-06 Toyota Motor Engin. & Manufact. N.A. (TEMA) Ternary thermoelectric material containing nanoparticles and process for producing the same

Also Published As

Publication number Publication date
WO2015080527A1 (ko) 2015-06-04
EP3073535A1 (en) 2016-09-28
KR20150062723A (ko) 2015-06-08
JP6238149B2 (ja) 2017-11-29
EP3073535A4 (en) 2017-06-21
JP2017507872A (ja) 2017-03-23
EP3073535B1 (en) 2019-03-27
US20170170379A1 (en) 2017-06-15
US10134970B2 (en) 2018-11-20

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