JP5774200B2 - 新規な化合物半導体及びその活用 - Google Patents
新規な化合物半導体及びその活用 Download PDFInfo
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- JP5774200B2 JP5774200B2 JP2014506348A JP2014506348A JP5774200B2 JP 5774200 B2 JP5774200 B2 JP 5774200B2 JP 2014506348 A JP2014506348 A JP 2014506348A JP 2014506348 A JP2014506348 A JP 2014506348A JP 5774200 B2 JP5774200 B2 JP 5774200B2
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- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B19/00—Selenium; Tellurium; Compounds thereof
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- C01G51/00—Compounds of cobalt
- C01G51/006—Compounds containing, besides cobalt, two or more other elements, with the exception of oxygen or hydrogen
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- C01B19/00—Selenium; Tellurium; Compounds thereof
- C01B19/002—Compounds containing, besides selenium or tellurium, more than one other element, with -O- and -OH not being considered as anions
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- C01G15/00—Compounds of gallium, indium or thallium
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- C01G30/00—Compounds of antimony
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- C01G53/00—Compounds of nickel
- C01G53/006—Compounds containing, besides nickel, two or more other elements, with the exception of oxygen or hydrogen
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- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G55/00—Compounds of ruthenium, rhodium, palladium, osmium, iridium, or platinum
- C01G55/002—Compounds containing, besides ruthenium, rhodium, palladium, osmium, iridium, or platinum, two or more other elements, with the exception of oxygen or hydrogen
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/85—Thermoelectric active materials
- H10N10/851—Thermoelectric active materials comprising inorganic compositions
- H10N10/853—Thermoelectric active materials comprising inorganic compositions comprising arsenic, antimony or bismuth
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- C01P2002/00—Crystal-structural characteristics
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- C01P2002/52—Solid solutions containing elements as dopants
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- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/80—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70
- C01P2002/88—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70 by thermal analysis data, e.g. TGA, DTA, DSC
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- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/20—Particle morphology extending in two dimensions, e.g. plate-like
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- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/32—Thermal properties
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- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/40—Electric properties
Description
試薬として、In 0.0520g、Zn 0.0119g、Co 0.3844g、Rh 0.0559g、Sb 2.3167g、Sn 0.1076g、Se 0.0715gを用意し、これらを乳鉢(motor)を利用してよく混合した。このように混合された材料は、石英管(silica tube)の中に入れ真空密封して650℃で36時間加熱し、昇温時間は1時間30分にして、In0.25Zn0.1Co3.6Rh0.3Sb10.5Sn0.5Se0.5粉末を得た。
試薬として、In、Co、及びSbを用意し、これらを乳鉢を利用してよく混合してIn0.25Co4Sb12組成の混合物をペレットの形態で製作した。そして、H2(1.94%)及びN2ガスを流しながら500℃で15時間加熱し、このとき昇温時間は1時間30分にした。このように混合された材料は、石英管の中に入れ真空密封して650℃で36時間加熱し、昇温時間は1時間30分にして、In0.25Co4Sb12粉末を得た。
ここで、σは電気伝導度、Sはゼーベック係数、Tは温度、κは熱伝導度を示す。
Claims (10)
- 前記化学式1のxは、0<x≦0.25であることを特徴とする請求項1に記載の化合物半導体。
- 前記化学式1のx及びyは、0<x+y≦1であることを特徴とする請求項1または2に記載の化合物半導体。
- 前記化学式1のn及びzは、0<n+z<9であることを特徴とする請求項1〜3のいずれか一項に記載の化合物半導体。
- 前記化学式1のn、z、及びbは、0<n+z+b≦9であることを特徴とする請求項1〜4のいずれか一項に記載の化合物半導体。
- In、Co、及びSbと、Zn及びCdのうち少なくとも一つと、Fe、Ni、Ru、Rh、Pd、Ir及びPtのうち少なくとも一つと、Si、Ge及びSnのうち少なくとも一つと、O、S及びSeのうち少なくとも一つとを含む原料を粉末形態で混合して、請求項1に記載の化学式1に対応する組成を有する混合物を形成するステップと、
真空中、または水素、Ar、He及びN 2 のうち少なくとも一つの気体を流しながら前記混合物を400℃ないし800℃の温度で加熱して熱処理するステップと、
を含む請求項1に記載の化合物半導体の製造方法。 - 前記熱処理ステップは、450℃ないし700℃で行われることを特徴とする請求項6に記載の化合物半導体の製造方法。
- 前記熱処理ステップは、2つ以上の熱処理段階を含むことを特徴とする請求項6または7に記載の化合物半導体の製造方法。
- 請求項1〜5のうちいずれか一項に記載の化合物半導体を含む熱電変換素子。
- 請求項1〜5のうちいずれか一項に記載の化合物半導体を含む太陽電池。
Applications Claiming Priority (9)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR20110045348 | 2011-05-13 | ||
KR10-2011-0045349 | 2011-05-13 | ||
KR20110045349 | 2011-05-13 | ||
KR10-2011-0045348 | 2011-05-13 | ||
KR20110049609 | 2011-05-25 | ||
KR10-2011-0049609 | 2011-05-25 | ||
PCT/KR2012/003736 WO2012157913A1 (ko) | 2011-05-13 | 2012-05-11 | 신규한 화합물 반도체 및 그 활용 |
KR10-2012-0050256 | 2012-05-11 | ||
KR1020120050256A KR101366711B1 (ko) | 2011-05-13 | 2012-05-11 | 신규한 화합물 반도체 및 그 활용 |
Publications (2)
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JP2014518539A JP2014518539A (ja) | 2014-07-31 |
JP5774200B2 true JP5774200B2 (ja) | 2015-09-09 |
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JP2014506348A Active JP5774200B2 (ja) | 2011-05-13 | 2012-05-11 | 新規な化合物半導体及びその活用 |
Country Status (7)
Country | Link |
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US (1) | US8728357B2 (ja) |
EP (1) | EP2708495B1 (ja) |
JP (1) | JP5774200B2 (ja) |
KR (1) | KR101366711B1 (ja) |
CN (1) | CN103534199B (ja) |
TW (1) | TWI469928B (ja) |
WO (1) | WO2012157913A1 (ja) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2012157913A1 (ko) * | 2011-05-13 | 2012-11-22 | 주식회사 엘지화학 | 신규한 화합물 반도체 및 그 활용 |
JP5774199B2 (ja) * | 2011-05-13 | 2015-09-09 | エルジー・ケム・リミテッド | 新規な化合物半導体及びその活用 |
JP5852228B2 (ja) * | 2011-05-13 | 2016-02-03 | エルジー・ケム・リミテッド | 新規な化合物半導体及びその活用 |
KR101624310B1 (ko) | 2013-10-17 | 2016-05-25 | 주식회사 엘지화학 | 열전 재료 및 그 제조 방법 |
WO2015057000A1 (ko) * | 2013-10-17 | 2015-04-23 | 주식회사 엘지화학 | 열전 재료 및 그 제조 방법 |
US9600547B2 (en) | 2014-05-30 | 2017-03-21 | International Business Machines Corporation | System and method of consuming and integrating with rest-based cloud and enterprise services |
CN107935060B (zh) * | 2017-11-24 | 2019-11-05 | 上海材料研究所 | 层状硫族光电材料及其制备方法 |
CN113277481A (zh) * | 2021-05-10 | 2021-08-20 | 中山大学 | 一种具有多重量子态和多样晶体结构的新型过渡金属碲化物及其制备方法 |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01298010A (ja) * | 1988-05-26 | 1989-12-01 | Mitsubishi Metal Corp | 金属セレン化物の製造方法 |
JP2002270907A (ja) * | 2001-03-06 | 2002-09-20 | Nec Corp | 熱電変換材料とそれを用いた素子 |
EP1665401A2 (en) * | 2003-09-12 | 2006-06-07 | Board of Trustees operating Michigan State University | Silver-containing thermoelectric compounds |
US7462217B2 (en) * | 2003-12-08 | 2008-12-09 | E.I. Du Pont De Nemours And Company | Method of preparation for the high performance thermoelectric material indium-cobalt-antimony |
EP1735846A2 (en) * | 2004-04-14 | 2006-12-27 | E.I.Du pont de nemours and company | High performance thermoelectric materials and their method of preparation |
US7648552B2 (en) * | 2004-07-23 | 2010-01-19 | Gm Global Technology Operations, Inc. | Filled skutterudites for advanced thermoelectric applications |
JP5055747B2 (ja) * | 2004-11-10 | 2012-10-24 | 大日本印刷株式会社 | 金属酸化物膜の製造方法 |
US8329319B2 (en) * | 2005-10-17 | 2012-12-11 | Agency For Science, Technology And Research | Phase change magnetic material |
US8211388B2 (en) * | 2006-02-16 | 2012-07-03 | Brigham Young University | Preparation of uniform nanoparticles of ultra-high purity metal oxides, mixed metal oxides, metals, and metal alloys |
JP5028616B2 (ja) * | 2006-08-03 | 2012-09-19 | 国立大学法人宇都宮大学 | 金属硫化物の製造方法 |
JP5205904B2 (ja) * | 2006-09-29 | 2013-06-05 | 大日本印刷株式会社 | 金属酸化物膜の製造方法、および積層体 |
WO2008142768A1 (ja) * | 2007-05-21 | 2008-11-27 | Renesas Technology Corp. | 半導体装置およびその製造方法 |
KR100910173B1 (ko) * | 2007-09-10 | 2009-07-30 | 충주대학교 산학협력단 | CoSb3 스커테루다이트계 열전재료 및 그 제조방법 |
WO2009093455A1 (ja) * | 2008-01-23 | 2009-07-30 | Furukawa Co., Ltd. | 熱電変換材料および熱電変換モジュール |
US8518287B2 (en) * | 2008-04-04 | 2013-08-27 | Samsung Electronics Co., Ltd. | Dichalcogenide thermoelectric material |
CN101397612B (zh) * | 2008-10-21 | 2011-05-25 | 同济大学 | 一种方钴矿基热电块体材料的制备方法 |
KR101042575B1 (ko) * | 2009-08-11 | 2011-06-20 | 충주대학교 산학협력단 | In-Co-Fe-Sb 계 스커테루다이트 열전재료 및 그 제조방법 |
KR101042574B1 (ko) * | 2009-08-11 | 2011-06-20 | 충주대학교 산학협력단 | In-Co-Ni-Sb 계 스커테루다이트 열전재료 및 그 제조방법 |
JP5852228B2 (ja) * | 2011-05-13 | 2016-02-03 | エルジー・ケム・リミテッド | 新規な化合物半導体及びその活用 |
WO2012157913A1 (ko) * | 2011-05-13 | 2012-11-22 | 주식회사 엘지화학 | 신규한 화합물 반도체 및 그 활용 |
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- 2012-05-11 WO PCT/KR2012/003736 patent/WO2012157913A1/ko active Application Filing
- 2012-05-11 JP JP2014506348A patent/JP5774200B2/ja active Active
- 2012-05-11 CN CN201280021382.5A patent/CN103534199B/zh active Active
- 2012-05-11 EP EP12785013.9A patent/EP2708495B1/en active Active
- 2012-05-11 KR KR1020120050256A patent/KR101366711B1/ko active IP Right Grant
- 2012-05-14 TW TW101117057A patent/TWI469928B/zh active
- 2012-09-14 US US13/618,256 patent/US8728357B2/en active Active
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Publication number | Publication date |
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EP2708495A1 (en) | 2014-03-19 |
EP2708495B1 (en) | 2017-09-27 |
US8728357B2 (en) | 2014-05-20 |
JP2014518539A (ja) | 2014-07-31 |
KR20120127299A (ko) | 2012-11-21 |
CN103534199B (zh) | 2016-05-04 |
WO2012157913A1 (ko) | 2012-11-22 |
EP2708495A4 (en) | 2015-03-18 |
TWI469928B (zh) | 2015-01-21 |
TW201305057A (zh) | 2013-02-01 |
CN103534199A (zh) | 2014-01-22 |
KR101366711B1 (ko) | 2014-02-24 |
US20130009115A1 (en) | 2013-01-10 |
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