JP5767398B2 - 新規な化合物半導体及びその活用 - Google Patents
新規な化合物半導体及びその活用 Download PDFInfo
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- JP5767398B2 JP5767398B2 JP2014506349A JP2014506349A JP5767398B2 JP 5767398 B2 JP5767398 B2 JP 5767398B2 JP 2014506349 A JP2014506349 A JP 2014506349A JP 2014506349 A JP2014506349 A JP 2014506349A JP 5767398 B2 JP5767398 B2 JP 5767398B2
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- compound semiconductor
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G51/00—Compounds of cobalt
- C01G51/006—Compounds containing, besides cobalt, two or more other elements, with the exception of oxygen or hydrogen
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B19/00—Selenium; Tellurium; Compounds thereof
- C01B19/002—Compounds containing, besides selenium or tellurium, more than one other element, with -O- and -OH not being considered as anions
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/85—Thermoelectric active materials
- H10N10/851—Thermoelectric active materials comprising inorganic compositions
- H10N10/852—Thermoelectric active materials comprising inorganic compositions comprising tellurium, selenium or sulfur
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/85—Thermoelectric active materials
- H10N10/851—Thermoelectric active materials comprising inorganic compositions
- H10N10/853—Thermoelectric active materials comprising inorganic compositions comprising arsenic, antimony or bismuth
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/50—Solid solutions
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/40—Electric properties
Description
試薬として、In、Co、及びSbを用意し、これらを乳鉢(mortar)を利用してよく混合してIn0.25Co4Sb12組成と、In0.25Co4Sb10.5組成の混合物をペレットの形態で製作した。そして、H2(1.94%)及びN2ガスを流しながら500℃で15時間加熱し、このとき昇温時間は1時間30分にした。
試薬として、In、Co、及びSbを用意し、これらを乳鉢を利用してよく混合してIn0.25Co4Sb12組成と、In0.25Co4Sb10.5組成の混合物をペレットの形態で製作した。そして、H2(1.94%)及びN2ガスを流しながら500℃で15時間加熱し、このとき昇温時間は1時間30分にした。
試薬として、In、Co、及びSbを用意し、これらを乳鉢を利用してよく混合してIn0.25Co4Sb12組成の混合物をペレットの形態で製作した。そして、H2(1.94%)及びN2ガスを流しながら500℃で15時間加熱し、このとき昇温時間は1時間30分にした。
ここで、σは電気伝導度、Sはゼーベック係数、Tは温度、κは熱伝導度を示す。
Claims (6)
- 前記化学式1のxは、0<x≦0.25であることを特徴とする請求項1に記載の化合物半導体。
- 前記化学式1のzは、0.4≦z≦2であることを特徴とする請求項1または2に記載の化合物半導体。
- 粉末形態のIn、Co及びSbを混合して混合物を形成するステップと、
前記混合物をH 2 及びN 2 ガスを流しながら400℃ないし600℃で1次熱処理するステップと、
前記1次熱処理された物質に粉末形態のSeを追加して請求項1に記載の化学式1に対応する組成を有する混合物を形成するステップと、
前記Seが追加された混合物を真空状態で600℃ないし800℃で2次熱処理するステップと、
を含む請求項1に記載の化合物半導体の製造方法。 - 請求項1〜3のうちいずれか一項に記載の化合物半導体を含む熱電変換素子。
- 請求項1〜3のうちいずれか一項に記載の化合物半導体を含む太陽電池。
Applications Claiming Priority (9)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR20110045349 | 2011-05-13 | ||
KR10-2011-0045348 | 2011-05-13 | ||
KR10-2011-0045349 | 2011-05-13 | ||
KR20110045348 | 2011-05-13 | ||
KR10-2011-0049609 | 2011-05-25 | ||
KR20110049609 | 2011-05-25 | ||
PCT/KR2012/003737 WO2012157914A1 (ko) | 2011-05-13 | 2012-05-11 | 신규한 화합물 반도체 및 그 활용 |
KR10-2012-0050394 | 2012-05-11 | ||
KR1020120050394A KR101372523B1 (ko) | 2011-05-13 | 2012-05-11 | 신규한 화합물 반도체 및 그 활용 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2014520054A JP2014520054A (ja) | 2014-08-21 |
JP5767398B2 true JP5767398B2 (ja) | 2015-08-19 |
Family
ID=47177150
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014506349A Active JP5767398B2 (ja) | 2011-05-13 | 2012-05-11 | 新規な化合物半導体及びその活用 |
Country Status (6)
Country | Link |
---|---|
US (1) | US9017581B2 (ja) |
EP (1) | EP2708496B1 (ja) |
JP (1) | JP5767398B2 (ja) |
CN (1) | CN103517871B (ja) |
TW (1) | TWI469929B (ja) |
WO (1) | WO2012157914A1 (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2012157917A1 (ko) * | 2011-05-13 | 2012-11-22 | 주식회사 엘지화학 | 신규한 화합물 반도체 및 그 활용 |
JP5852228B2 (ja) * | 2011-05-13 | 2016-02-03 | エルジー・ケム・リミテッド | 新規な化合物半導体及びその活用 |
WO2016052948A1 (ko) | 2014-09-29 | 2016-04-07 | 주식회사 엘지화학 | 화합물 반도체 및 그 제조방법 |
US10389705B2 (en) * | 2016-03-30 | 2019-08-20 | Airwatch Llc | Associating user accounts with enterprise workspaces |
KR102122573B1 (ko) * | 2017-03-09 | 2020-06-12 | 주식회사 엘지화학 | 신규한 화합물 반도체 및 그 활용 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
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US6069312A (en) * | 1994-01-28 | 2000-05-30 | California Institute Of Technology | Thermoelectric materials with filled skutterudite structure for thermoelectric devices |
JP2003173826A (ja) * | 2001-12-05 | 2003-06-20 | Mitsubishi Paper Mills Ltd | 半導体電極の作製方法、並びにそれを用いた光電変換素子 |
US7592535B2 (en) * | 2003-09-12 | 2009-09-22 | Board Of Trustees Operating Michingan State University | Silver-containing thermoelectric compounds |
US7462217B2 (en) * | 2003-12-08 | 2008-12-09 | E.I. Du Pont De Nemours And Company | Method of preparation for the high performance thermoelectric material indium-cobalt-antimony |
KR20070015543A (ko) * | 2004-04-14 | 2007-02-05 | 이 아이 듀폰 디 네모아 앤드 캄파니 | 고성능 열전 물질 및 그의 제조 방법 |
JP4875708B2 (ja) * | 2005-10-17 | 2012-02-15 | エージェンシー フォー サイエンス,テクノロジー アンド リサーチ | 新規な相変化磁性材料 |
CN101415509B (zh) * | 2006-02-16 | 2013-04-17 | 布莱阿姆青年大学 | 超高纯度金属氧化物、混合金属氧化物、金属以及金属合金的均匀纳米颗粒的制备 |
KR100910173B1 (ko) * | 2007-09-10 | 2009-07-30 | 충주대학교 산학협력단 | CoSb3 스커테루다이트계 열전재료 및 그 제조방법 |
JP2009253301A (ja) * | 2008-04-04 | 2009-10-29 | Samsung Electronics Co Ltd | ジカルコゲナイド熱電材料 |
CN103400932B (zh) * | 2008-08-29 | 2016-08-10 | Lg化学株式会社 | 新型热电转换材料及其制备方法,以及使用该新型热电转换材料的热电转换元件 |
CN101397612B (zh) * | 2008-10-21 | 2011-05-25 | 同济大学 | 一种方钴矿基热电块体材料的制备方法 |
CN101478026A (zh) * | 2009-01-21 | 2009-07-08 | 清华大学 | 一种热电化合物及其制备方法 |
CN102439097A (zh) * | 2009-05-21 | 2012-05-02 | 纳幕尔杜邦公司 | 硫化铜锡和硫化铜锌锡墨组合物 |
KR101042574B1 (ko) * | 2009-08-11 | 2011-06-20 | 충주대학교 산학협력단 | In-Co-Ni-Sb 계 스커테루다이트 열전재료 및 그 제조방법 |
KR101042575B1 (ko) * | 2009-08-11 | 2011-06-20 | 충주대학교 산학협력단 | In-Co-Fe-Sb 계 스커테루다이트 열전재료 및 그 제조방법 |
WO2012157917A1 (ko) * | 2011-05-13 | 2012-11-22 | 주식회사 엘지화학 | 신규한 화합물 반도체 및 그 활용 |
JP5852228B2 (ja) * | 2011-05-13 | 2016-02-03 | エルジー・ケム・リミテッド | 新規な化合物半導体及びその活用 |
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2012
- 2012-05-11 WO PCT/KR2012/003737 patent/WO2012157914A1/ko active Application Filing
- 2012-05-11 CN CN201280022517.XA patent/CN103517871B/zh active Active
- 2012-05-11 EP EP12785145.9A patent/EP2708496B1/en active Active
- 2012-05-11 JP JP2014506349A patent/JP5767398B2/ja active Active
- 2012-05-14 TW TW101117048A patent/TWI469929B/zh active
- 2012-09-14 US US13/617,674 patent/US9017581B2/en active Active
Also Published As
Publication number | Publication date |
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WO2012157914A1 (ko) | 2012-11-22 |
TW201305059A (zh) | 2013-02-01 |
EP2708496B1 (en) | 2018-02-28 |
JP2014520054A (ja) | 2014-08-21 |
CN103517871A (zh) | 2014-01-15 |
US9017581B2 (en) | 2015-04-28 |
EP2708496A4 (en) | 2015-03-18 |
TWI469929B (zh) | 2015-01-21 |
EP2708496A1 (en) | 2014-03-19 |
US20130009117A1 (en) | 2013-01-10 |
CN103517871B (zh) | 2015-08-19 |
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