JP6233581B2 - 超音波センサー及びその製造方法 - Google Patents

超音波センサー及びその製造方法 Download PDF

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Publication number
JP6233581B2
JP6233581B2 JP2013270547A JP2013270547A JP6233581B2 JP 6233581 B2 JP6233581 B2 JP 6233581B2 JP 2013270547 A JP2013270547 A JP 2013270547A JP 2013270547 A JP2013270547 A JP 2013270547A JP 6233581 B2 JP6233581 B2 JP 6233581B2
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Japan
Prior art keywords
electrode
opening
ultrasonic sensor
film
layer
Prior art date
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Active
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JP2013270547A
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English (en)
Japanese (ja)
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JP2015126449A (ja
JP2015126449A5 (https=
Inventor
力 小島
力 小島
幸司 大橋
幸司 大橋
宮田　佳直
佳直 宮田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
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Seiko Epson Corp
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Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP2013270547A priority Critical patent/JP6233581B2/ja
Priority to US14/582,304 priority patent/US9821342B2/en
Publication of JP2015126449A publication Critical patent/JP2015126449A/ja
Publication of JP2015126449A5 publication Critical patent/JP2015126449A5/ja
Application granted granted Critical
Publication of JP6233581B2 publication Critical patent/JP6233581B2/ja
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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B06—GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS IN GENERAL
    • B06B—METHODS OR APPARATUS FOR GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS OF INFRASONIC, SONIC, OR ULTRASONIC FREQUENCY, e.g. FOR PERFORMING MECHANICAL WORK IN GENERAL
    • B06B1/00—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency
    • B06B1/02—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy
    • B06B1/06—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy operating with piezoelectric effect or with electrostriction
    • B06B1/0607—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy operating with piezoelectric effect or with electrostriction using multiple elements
    • B06B1/0622—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy operating with piezoelectric effect or with electrostriction using multiple elements on one surface
    • B06B1/0629—Square array
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S15/00—Systems using the reflection or reradiation of acoustic waves, e.g. sonar systems
    • G01S15/88—Sonar systems specially adapted for specific applications
    • G01S15/89—Sonar systems specially adapted for specific applications for mapping or imaging
    • G01S15/8906—Short-range imaging systems; Acoustic microscope systems using pulse-echo techniques
    • G01S15/8909—Short-range imaging systems; Acoustic microscope systems using pulse-echo techniques using a static transducer configuration
    • G01S15/8915—Short-range imaging systems; Acoustic microscope systems using pulse-echo techniques using a static transducer configuration using a transducer array
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
    • H10N30/079—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing using intermediate layers, e.g. for growth control
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/08—Shaping or machining of piezoelectric or electrostrictive bodies
    • H10N30/082—Shaping or machining of piezoelectric or electrostrictive bodies by etching, e.g. lithography
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/20—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators
    • H10N30/204—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators using bending displacement, e.g. unimorph, bimorph or multimorph cantilever or membrane benders
    • H10N30/2047—Membrane type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/30—Piezoelectric or electrostrictive devices with mechanical input and electrical output, e.g. functioning as generators or sensors
    • H10N30/302—Sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/704—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings
    • H10N30/706—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings characterised by the underlying bases, e.g. substrates
    • H10N30/708—Intermediate layers, e.g. barrier, adhesion or growth control buffer layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N69/00—Integrated devices, or assemblies of multiple devices, comprising at least one superconducting element covered by group H10N60/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Remote Sensing (AREA)
  • Acoustics & Sound (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Engineering (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • General Physics & Mathematics (AREA)
  • Transducers For Ultrasonic Waves (AREA)
  • Ultra Sonic Daignosis Equipment (AREA)
  • Multimedia (AREA)
JP2013270547A 2013-12-26 2013-12-26 超音波センサー及びその製造方法 Active JP6233581B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2013270547A JP6233581B2 (ja) 2013-12-26 2013-12-26 超音波センサー及びその製造方法
US14/582,304 US9821342B2 (en) 2013-12-26 2014-12-24 Ultrasonic sensor and method for producing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013270547A JP6233581B2 (ja) 2013-12-26 2013-12-26 超音波センサー及びその製造方法

Publications (3)

Publication Number Publication Date
JP2015126449A JP2015126449A (ja) 2015-07-06
JP2015126449A5 JP2015126449A5 (https=) 2017-02-16
JP6233581B2 true JP6233581B2 (ja) 2017-11-22

Family

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Family Applications (1)

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JP2013270547A Active JP6233581B2 (ja) 2013-12-26 2013-12-26 超音波センサー及びその製造方法

Country Status (2)

Country Link
US (1) US9821342B2 (https=)
JP (1) JP6233581B2 (https=)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
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US9772314B2 (en) * 2013-12-18 2017-09-26 Seiko Epson Corporation Ultrasonic sensor and measuring method using the same, and method of manufacturing ultrasonic sensor
ES2989602T3 (es) * 2014-07-11 2024-11-27 Microtech Medical Technologies Ltd Transductor de múltiples celdas
JP6536792B2 (ja) * 2015-03-25 2019-07-03 セイコーエプソン株式会社 超音波センサー及びその製造方法
JP6665667B2 (ja) * 2016-04-28 2020-03-13 セイコーエプソン株式会社 超音波デバイス、超音波モジュール、及び超音波測定装置
US11039814B2 (en) * 2016-12-04 2021-06-22 Exo Imaging, Inc. Imaging devices having piezoelectric transducers
JP6862820B2 (ja) * 2016-12-26 2021-04-21 セイコーエプソン株式会社 超音波デバイス及び超音波装置
JP2018157125A (ja) 2017-03-21 2018-10-04 セイコーエプソン株式会社 圧電素子、超音波センサー、吐出ヘッド、超音波装置、液体吐出装置及び圧電素子の製造方法
JP6874463B2 (ja) * 2017-03-27 2021-05-19 セイコーエプソン株式会社 圧電素子、圧電アクチュエーター、超音波探触子、超音波装置、電子機器、液体噴射ヘッド、及び液体噴射装置
JP2019100791A (ja) * 2017-11-30 2019-06-24 セイコーエプソン株式会社 液面センサー及び液面検出方法
JP7024549B2 (ja) * 2018-03-28 2022-02-24 セイコーエプソン株式会社 超音波センサー、及び超音波装置
JP7176286B2 (ja) 2018-08-09 2022-11-22 セイコーエプソン株式会社 超音波デバイス及び超音波センサー
JP7211030B2 (ja) * 2018-11-22 2023-01-24 セイコーエプソン株式会社 超音波センサー、及び超音波装置
CN111403591B (zh) * 2018-12-14 2023-04-07 茂丞(郑州)超声科技有限公司 晶圆级超声波芯片组件及其制造方法
US10726719B1 (en) * 2019-02-05 2020-07-28 International Business Machines Corporation Piezoelectric power generation for roadways
CN109746177B (zh) * 2019-03-12 2024-03-12 重庆大学 压电超声换能器及其工作方法
CN113366526B (zh) * 2019-03-18 2024-01-30 株式会社村田制作所 压电器件
CN112216784B (zh) * 2019-07-12 2024-08-06 茂丞(郑州)超声科技有限公司 晶圆级超声波感测装置及其制造方法
CN111136001B (zh) * 2020-01-16 2024-12-03 重庆大学 机械槽增强型差分式压电超声换能器及其工作方法
CN111615033B (zh) * 2020-05-14 2024-02-20 京东方科技集团股份有限公司 发声装置及其驱动方法、显示面板及显示装置
WO2022178807A1 (zh) * 2021-02-26 2022-09-01 京东方科技集团股份有限公司 触觉反馈基板、触觉反馈装置及触觉反馈方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
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EP1118467B1 (en) * 1996-04-10 2006-01-25 Seiko Epson Corporation Ink jet recording head
JP3552013B2 (ja) * 1996-12-09 2004-08-11 セイコーエプソン株式会社 インクジェット式記録ヘッド
US6502928B1 (en) * 1998-07-29 2003-01-07 Seiko Epson Corporation Ink jet recording head and ink jet recording apparatus comprising the same
JP3693118B2 (ja) * 2002-08-12 2005-09-07 セイコーエプソン株式会社 シリコンデバイスの製造方法及び液体噴射ヘッドの製造方法並びに液体噴射ヘッド
JP4366568B2 (ja) * 2003-08-04 2009-11-18 セイコーエプソン株式会社 液体噴射ヘッド及び液体噴射装置
JP4740770B2 (ja) * 2006-03-02 2011-08-03 株式会社日立メディコ 超音波探触子及び超音波撮像装置
EP1950997B1 (en) * 2005-10-18 2019-10-09 Hitachi, Ltd. Ultrasonic probe
JP2008251598A (ja) * 2007-03-29 2008-10-16 Seiko Epson Corp 圧電素子およびその製造方法
JP5265163B2 (ja) * 2007-09-27 2013-08-14 富士フイルム株式会社 圧電デバイスおよび液体吐出ヘッド
JP2009190247A (ja) * 2008-02-14 2009-08-27 Seiko Epson Corp 液体噴射ヘッドおよび液体噴射装置
JP5499479B2 (ja) * 2009-01-13 2014-05-21 セイコーエプソン株式会社 電子機器
CN103210515B (zh) * 2010-09-15 2015-06-03 株式会社理光 机电转换器件及其制造方法及液滴排出头和液滴排出设备
JP5696408B2 (ja) * 2010-09-15 2015-04-08 株式会社リコー 電気機械変換素子の製造方法
JP6102075B2 (ja) * 2012-03-30 2017-03-29 セイコーエプソン株式会社 超音波トランスデューサー素子チップおよびプローブ並びに電子機器および超音波診断装置
JP2014198461A (ja) * 2013-03-15 2014-10-23 株式会社リコー アクチュエータ素子、液滴吐出ヘッド、液滴吐出装置及び画像形成装置
JP6468426B2 (ja) * 2014-03-10 2019-02-13 セイコーエプソン株式会社 超音波センサー
JP6314777B2 (ja) * 2014-09-30 2018-04-25 セイコーエプソン株式会社 超音波センサー並びにプローブおよび電子機器

Also Published As

Publication number Publication date
US9821342B2 (en) 2017-11-21
JP2015126449A (ja) 2015-07-06
US20150187347A1 (en) 2015-07-02

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