JP6223839B2 - 基板液処理方法、基板液処理装置および記憶媒体 - Google Patents

基板液処理方法、基板液処理装置および記憶媒体 Download PDF

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JP6223839B2
JP6223839B2 JP2014008085A JP2014008085A JP6223839B2 JP 6223839 B2 JP6223839 B2 JP 6223839B2 JP 2014008085 A JP2014008085 A JP 2014008085A JP 2014008085 A JP2014008085 A JP 2014008085A JP 6223839 B2 JP6223839 B2 JP 6223839B2
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liquid
substrate
nozzle
processing
diw
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JP2014199917A (ja
JP2014199917A5 (ko
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居 武 彦 折
居 武 彦 折
藤 尚 樹 新
藤 尚 樹 新
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Priority to JP2014008085A priority Critical patent/JP6223839B2/ja
Priority to US14/186,131 priority patent/US20140261570A1/en
Priority to KR1020140023586A priority patent/KR102159840B1/ko
Priority to TW103108499A priority patent/TWI579909B/zh
Publication of JP2014199917A publication Critical patent/JP2014199917A/ja
Publication of JP2014199917A5 publication Critical patent/JP2014199917A5/ja
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041Cleaning
    • H01L21/02043Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052Wet cleaning only
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041Cleaning
    • H01L21/02057Cleaning during device manufacture
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
JP2014008085A 2013-03-15 2014-01-20 基板液処理方法、基板液処理装置および記憶媒体 Active JP6223839B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2014008085A JP6223839B2 (ja) 2013-03-15 2014-01-20 基板液処理方法、基板液処理装置および記憶媒体
US14/186,131 US20140261570A1 (en) 2013-03-15 2014-02-21 Substrate liquid processing method, substrate liquid processing apparatus, and storage medium
KR1020140023586A KR102159840B1 (ko) 2013-03-15 2014-02-27 기판 액처리 방법, 기판 액처리 장치 및 기억 매체
TW103108499A TWI579909B (zh) 2013-03-15 2014-03-11 基板液體處理方法、基板液體處理裝置及記憶媒體

Applications Claiming Priority (3)

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JP2013053579 2013-03-15
JP2013053579 2013-03-15
JP2014008085A JP6223839B2 (ja) 2013-03-15 2014-01-20 基板液処理方法、基板液処理装置および記憶媒体

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JP2014199917A JP2014199917A (ja) 2014-10-23
JP2014199917A5 JP2014199917A5 (ko) 2016-03-03
JP6223839B2 true JP6223839B2 (ja) 2017-11-01

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US (1) US20140261570A1 (ko)
JP (1) JP6223839B2 (ko)
KR (1) KR102159840B1 (ko)
TW (1) TWI579909B (ko)

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JP5779168B2 (ja) * 2012-12-04 2015-09-16 東京エレクトロン株式会社 周縁部塗布装置、周縁部塗布方法及び周縁部塗布用記録媒体
JP6341035B2 (ja) * 2014-09-25 2018-06-13 東京エレクトロン株式会社 基板液処理方法、基板液処理装置、及び記憶媒体
JP6410694B2 (ja) * 2014-10-21 2018-10-24 東京エレクトロン株式会社 基板液処理方法及び基板液処理装置並びに基板液処理プログラムを記憶したコンピュータ読み取り可能な記憶媒体
US9627259B2 (en) 2014-11-14 2017-04-18 Kabushiki Kaisha Toshiba Device manufacturing method and device
KR20160057966A (ko) 2014-11-14 2016-05-24 가부시끼가이샤 도시바 처리 장치, 노즐 및 다이싱 장치
JP6305355B2 (ja) 2015-01-28 2018-04-04 株式会社東芝 デバイスの製造方法
JP6462462B2 (ja) 2015-04-01 2019-01-30 東芝メモリ株式会社 基板処理装置および基板処理方法
JP6545511B2 (ja) * 2015-04-10 2019-07-17 株式会社東芝 処理装置
JP6740028B2 (ja) 2015-07-29 2020-08-12 東京エレクトロン株式会社 基板処理装置、基板処理方法および記憶媒体
JP6404189B2 (ja) * 2015-08-07 2018-10-10 東京エレクトロン株式会社 基板液処理装置、基板液処理方法及び記憶媒体
JP6573520B2 (ja) * 2015-09-29 2019-09-11 株式会社Screenホールディングス 基板処理方法および基板処理装置
JP6588819B2 (ja) * 2015-12-24 2019-10-09 株式会社Screenホールディングス 基板処理装置および基板処理方法
KR101817211B1 (ko) * 2016-05-27 2018-01-11 세메스 주식회사 기판 처리 장치 및 방법
KR20180003109A (ko) * 2016-06-30 2018-01-09 세메스 주식회사 기판 처리 장치 및 방법
JP6765878B2 (ja) * 2016-07-06 2020-10-07 東京エレクトロン株式会社 基板液処理方法及び基板液処理装置
JP2018129476A (ja) * 2017-02-10 2018-08-16 東京エレクトロン株式会社 基板処理装置
KR101994420B1 (ko) * 2018-10-11 2019-07-01 세메스 주식회사 기판 처리 장치 및 방법
JP7301662B2 (ja) * 2019-07-29 2023-07-03 株式会社Screenホールディングス 基板処理方法および基板処理装置
JP7470785B2 (ja) 2020-05-15 2024-04-18 株式会社荏原製作所 洗浄装置および洗浄方法
KR102583342B1 (ko) 2020-10-22 2023-09-26 세메스 주식회사 기판 처리 장치
CN113035742B (zh) * 2021-02-10 2022-03-11 江苏亚电科技有限公司 一种半导体制造用晶圆清洗回收装置
KR102571748B1 (ko) * 2021-05-04 2023-08-25 세메스 주식회사 기판 처리 장치 및 방법

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JP2708495B2 (ja) * 1988-09-19 1998-02-04 株式会社日立製作所 半導体冷却装置
JPH05251417A (ja) * 1992-03-06 1993-09-28 Babcock Hitachi Kk 洗浄装置
JP3892792B2 (ja) * 2001-11-02 2007-03-14 大日本スクリーン製造株式会社 基板処理装置および基板洗浄装置
US20030148624A1 (en) * 2002-01-31 2003-08-07 Kazuto Ikemoto Method for removing resists
JP2004006672A (ja) * 2002-04-19 2004-01-08 Dainippon Screen Mfg Co Ltd 基板処理方法および基板処理装置
JP4312997B2 (ja) * 2002-06-04 2009-08-12 東京エレクトロン株式会社 基板処理装置、基板処理方法及びノズル
JP2004335923A (ja) * 2003-05-12 2004-11-25 Sony Corp エッチング方法およびエッチング装置
US7622338B2 (en) * 2004-08-31 2009-11-24 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP4324527B2 (ja) * 2004-09-09 2009-09-02 東京エレクトロン株式会社 基板洗浄方法及び現像装置
US20060286804A1 (en) * 2005-06-15 2006-12-21 Chuan-Yi Wu Method for forming patterned material layer
JP4527660B2 (ja) * 2005-06-23 2010-08-18 東京エレクトロン株式会社 基板処理方法及び基板処理装置
JP4901650B2 (ja) 2007-08-31 2012-03-21 東京エレクトロン株式会社 液処理装置、液処理方法および記憶媒体
JP4949338B2 (ja) * 2008-08-06 2012-06-06 東京エレクトロン株式会社 液処理装置
JP5270263B2 (ja) * 2008-08-29 2013-08-21 大日本スクリーン製造株式会社 基板処理装置および基板処理方法
JP4788785B2 (ja) * 2009-02-06 2011-10-05 東京エレクトロン株式会社 現像装置、現像処理方法及び記憶媒体
JP5003774B2 (ja) * 2010-02-15 2012-08-15 東京エレクトロン株式会社 現像装置、現像方法及び記憶媒体
JP5797532B2 (ja) * 2011-02-24 2015-10-21 東京エレクトロン株式会社 有機溶剤を含有する現像液を用いた現像処理方法及び現像処理装置

Also Published As

Publication number Publication date
KR102159840B1 (ko) 2020-09-24
US20140261570A1 (en) 2014-09-18
KR20140113348A (ko) 2014-09-24
JP2014199917A (ja) 2014-10-23
TWI579909B (zh) 2017-04-21
TW201448018A (zh) 2014-12-16

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