JP6220862B2 - 電極形成用導電性ペースト、太陽電池の製造方法及び太陽電池 - Google Patents
電極形成用導電性ペースト、太陽電池の製造方法及び太陽電池 Download PDFInfo
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- JP6220862B2 JP6220862B2 JP2015509962A JP2015509962A JP6220862B2 JP 6220862 B2 JP6220862 B2 JP 6220862B2 JP 2015509962 A JP2015509962 A JP 2015509962A JP 2015509962 A JP2015509962 A JP 2015509962A JP 6220862 B2 JP6220862 B2 JP 6220862B2
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Classifications
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0368—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors
- H01L31/03682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors including only elements of Group IV of the Periodic Table
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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Description
本発明の構成1は、銀粉末と、ガラスフリットと、添加粒子と、有機ビヒクルとを含有する太陽電池の電極形成用導電性ペーストであって、ガラスフリットのガラス転移点が150〜440℃であり、添加粒子の材料が、アルミニウムを20〜98質量%含む合金であり、導電性ペーストが、銀粉末100重量部に対し、添加粒子を2〜30重量部含む、導電性ペーストである。本発明の導電性ペーストを用いて結晶系シリコン太陽電池に電極を形成するならば、p型及びn型の不純物を拡散した拡散層に対して、低コストで、低接触抵抗の電極を形成することができる。
本発明の構成2は、導電性ペーストが、銀粉末100重量部に対し、ガラスフリットを0.1〜10重量部含む、構成1に記載の導電性ペーストである。本発明の導電性ペーストのガラスフリットが所定の範囲の添加量であることにより、結晶系シリコン太陽電池のp型及びn型の不純物を拡散した拡散層に対して、低コストで、低接触抵抗の電極を、確実に形成することができる。
本発明の構成3は、添加粒子の材料が、シリコン−アルミニウム合金である、構成1又は2に記載の導電性ペーストである。本発明の導電性ペーストの添加粒子の材料がシリコン−アルミニウム合金であることにより、結晶系シリコン太陽電池のp型及びn型の不純物を拡散した拡散層に対して、低コストで、低接触抵抗の電極を、より確実に形成することができる。
本発明の構成4は、添加粒子が、添加粒子中のアルミニウム100重量部に対し、シリコンを0.1〜20重量部含む、構成3に記載の導電性ペーストである。本発明の導電性ペーストの添加粒子中のアルミニウム及びシリコンの割合が所定の範囲であることにより、結晶系シリコン太陽電池のp型及びn型の不純物を拡散した拡散層に対して、低コストで、低接触抵抗の電極を、さらに確実に形成することができる。
本発明の構成5は、添加粒子の材料が、亜鉛−アルミニウム合金である、構成1又は2に記載の導電性ペーストである。本発明の導電性ペーストの添加粒子の材料が亜鉛−アルミニウム合金であることにより、結晶系シリコン太陽電池のp型及びn型の不純物を拡散した拡散層に対して、低コストで、低接触抵抗の電極を、より確実に形成することができる。
本発明の構成6は、添加粒子が、添加粒子中のアルミニウム100重量部に対し、亜鉛を0.1〜500重量部含む、構成5に記載の導電性ペーストである。本発明の導電性ペーストの添加粒子中のアルミニウム及び亜鉛の割合が所定の範囲であることにより、結晶系シリコン太陽電池のp型及びn型の不純物を拡散した拡散層に対して、低コストで、低接触抵抗の電極を、さらに確実に形成することができる。
本発明の構成7は、ガラスフリットが、酸化銀及び酸化バナジウムを含む、構成1〜6のいずれか1つに記載の導電性ペーストである。本発明の導電性ペーストにおいて、酸化銀及び酸化バナジウムを含むガラスフリットを用いることにより、p型及びn型の不純物を拡散した拡散層と電極との間の接触抵抗の低下を特に確実にすることができる。
本発明の構成8は、上記構成1〜7のいずれか1つに記載の導電性ペーストを、n型又はp型シリコンからなる結晶系シリコン基板の拡散層上に印刷し、乾燥し、及び焼成することによって電極を形成する工程を含む、結晶系シリコン太陽電池の製造方法である。本発明の結晶系シリコン太陽電池の製造方法により、p型及びn型の不純物を拡散した拡散層に対して、低接触抵抗の電極を有する太陽電池を、低コストで形成することができる。
本発明の構成9は、電極を形成する工程が、導電性ペーストを、400〜700℃で焼成することを含む、構成8に記載の結晶系シリコン太陽電池の製造方法である。本発明の結晶系シリコン太陽電池の製造方法において、所定の焼成温度により電極を形成することにより、p型及びn型の不純物を拡散した拡散層に対して、より低接触抵抗の電極を有する太陽電池を形成することができる。
本発明の構成10は、n型及びp型シリコンからなる結晶系シリコン基板の拡散層が、光入射面とは反対側の裏面に配置される、構成8又は9に記載の結晶系シリコン太陽電池の製造方法である。本発明の結晶系シリコン太陽電池の製造方法により、バックコンタクト型太陽電池を製造するならば、正電極及び負電極を同じ導電性ペーストを用いて形成することができる。その結果、電極形成のためのスクリーン印刷工程を1回にすることができるので、太陽電池の製造コスト低減に有利である。したがって、本発明の結晶系シリコン太陽電池の製造方法は、バックコンタクト型太陽電池の製造のために、好適に用いることができる。
本発明は、本発明の構成11は、構成8〜9のいずれか1つに記載の製造方法によって製造される結晶系シリコン太陽電池である。本発明によれば、低い接触抵抗の正電極及び負電極を1種類の導電性ペーストを用いて形成することができるので、低コストの結晶系シリコン太陽電池を得ることができる。
表1〜表3に、実施例及び比較例に用いた導電性ペーストの組成を示す。それぞれの成分の詳細は、下記の通りである。
・銀粉末: Ag(100重量部)。球状、BET値が1.0m2/g、平均粒径D50が1.4μmのものを用いた。
・添加粒子: 表1〜表3及び表8に、使用した添加粒子の種類及び銀粉末100重量部に対する添加粒子の添加量を示す。表1〜表3に記載の添加粒子の詳細を、表4に示す。表4中のSiAl−1、SiAl−2及びSiAl−3の3つが、シリコン−アルミニウム合金の添加粒子である。表8に記載の添加粒子の詳細を、表9に示す。表8中のZnAl−1及びZnAl−2の2つが、亜鉛−アルミニウム合金の添加粒子である。
・有機バインダ: エチルセルロース(2重量部)、エトキシ含有量48〜49.5重量%のものを用いた。具体的には、STD4(0.5重量部)、EM70(0.5重量部)及びSTD200(1.0重量部)を用いた。それぞれエチルセルロースが15重量部になるようにブチルカルビトールで溶解したものを用いた。
・可塑剤: オレイン酸(0.2重量部)を用いた。
・溶剤: ブチルカルビトール(5重量部)を用いた。
・ガラスフリット: 表1〜表3及び表8に、使用したガラスフリットの種類(GF−1〜GF−7)及び銀粉末100重量部に対するガラスフリットの添加量を示す。表1〜表3及び表8に記載のガラスフリットGF−1〜GF−7の詳細を、表5に示す。表5において、例えば、GF−1の「Ag2O-V2O5-MoO3-ZnO系」とは、ガラスフリットの成分として、Ag2O、V2O5、MoO3及びZnOを含むことを意味する。表5に示すように、ガラスフリットGF−1〜GF−6のガラス転移点は、440℃以下である。一方、比較例に含まれるガラスフリットGF−7は、ガラス転移点が442℃である。なお、ガラスフリットの平均粒径D50は2μmとした。
本発明の導電性ペーストの評価は、調製した導電性ペーストを用いて、結晶系シリコン基板の表面に接触抵抗測定用電極を試作し、接触抵抗を測定することによって行った。接触抵抗測定用電極の作製方法は次の通りである。
1b n型シリコン基板
2 反射防止膜
3 p型拡散層
4 n型拡散層
5a 電極(正電極)
5b 電極(負電極)
6 裏面パッシベーション層
15a 裏面電極
15b 光入射側電極(表面電極)
Claims (8)
- 銀粉末と、ガラスフリットと、添加粒子と、有機ビヒクルとを含有する太陽電池の電極形成用導電性ペーストであって、
ガラスフリットが、ガラスフリットの合計重量を100重量%として、酸化銀をAg 2 O換算で50〜70重量%、酸化バナジウムをV 2 O 5 換算で20〜35重量%、酸化モリブデンをMoO 3 換算で4〜12重量%及び酸化亜鉛をZnO換算で1〜10重量%含み、
ガラスフリットのガラス転移点が150〜440℃であり、
添加粒子の材料が、アルミニウムを20〜98質量%含む合金であり、
導電性ペーストが、銀粉末100重量部に対し、添加粒子を2〜30重量部含み、
n型及びp型シリコンからなる結晶系シリコン基板の拡散層が、光入射面とは反対側の裏面に配置されるバックコンタクト型の結晶系シリコン太陽電池の正電極及び負電極形成用導電性ペースト。 - 導電性ペーストが、銀粉末100重量部に対し、ガラスフリットを0.1〜10重量部含む、請求項1に記載の導電性ペースト。
- 添加粒子の材料が、シリコン−アルミニウム合金である、請求項1又は2に記載の導電性ペースト。
- 添加粒子が、添加粒子中のアルミニウム100重量部に対し、シリコンを0.1〜20重量部含む、請求項3に記載の導電性ペースト。
- 添加粒子の材料が、亜鉛−アルミニウム合金である、請求項1又は2に記載の導電性ペースト。
- 添加粒子が、添加粒子中のアルミニウム100重量部に対し、亜鉛を0.1〜500重量部含む、請求項5に記載の導電性ペースト。
- 請求項1〜6のいずれか1項に記載の導電性ペーストを、n型又はp型シリコンからなる結晶系シリコン基板の拡散層上に印刷し、乾燥し、及び焼成することによって電極を形成する工程を含む、結晶系シリコン太陽電池の製造方法。
- 電極を形成する工程が、導電性ペーストを、400〜700℃で焼成することを含む、請求項7に記載の結晶系シリコン太陽電池の製造方法。
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