TW201515738A - 於製造金屬奈米粒子組合物之方法 - Google Patents
於製造金屬奈米粒子組合物之方法 Download PDFInfo
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- TW201515738A TW201515738A TW103131431A TW103131431A TW201515738A TW 201515738 A TW201515738 A TW 201515738A TW 103131431 A TW103131431 A TW 103131431A TW 103131431 A TW103131431 A TW 103131431A TW 201515738 A TW201515738 A TW 201515738A
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- composition
- metal nanoparticle
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- nanoparticle composition
- aluminum
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- 239000000203 mixture Substances 0.000 title claims abstract description 75
- 239000002082 metal nanoparticle Substances 0.000 title claims abstract description 34
- 238000000034 method Methods 0.000 title claims description 40
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 37
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 37
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 16
- 239000000956 alloy Substances 0.000 claims abstract description 16
- 239000008188 pellet Substances 0.000 claims abstract description 16
- 229910052709 silver Inorganic materials 0.000 claims abstract description 15
- 239000004332 silver Substances 0.000 claims abstract description 15
- 238000002386 leaching Methods 0.000 claims abstract description 13
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 11
- 238000001035 drying Methods 0.000 claims abstract description 6
- 238000005482 strain hardening Methods 0.000 claims abstract description 4
- 238000001914 filtration Methods 0.000 claims abstract description 3
- 238000005406 washing Methods 0.000 claims abstract description 3
- 239000002245 particle Substances 0.000 claims description 28
- 239000000839 emulsion Substances 0.000 claims description 26
- 238000010438 heat treatment Methods 0.000 claims description 21
- 239000002105 nanoparticle Substances 0.000 claims description 20
- 239000000758 substrate Substances 0.000 claims description 17
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 15
- -1 silver-aluminum Chemical compound 0.000 claims description 13
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- 239000004065 semiconductor Substances 0.000 claims description 7
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 6
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 4
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 4
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 claims description 4
- 238000005275 alloying Methods 0.000 claims description 3
- 239000013043 chemical agent Substances 0.000 claims description 3
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 claims description 2
- 235000019253 formic acid Nutrition 0.000 claims description 2
- 239000002243 precursor Substances 0.000 claims 2
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 238000007669 thermal treatment Methods 0.000 abstract 2
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- 239000008367 deionised water Substances 0.000 description 6
- 229910021641 deionized water Inorganic materials 0.000 description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 238000001878 scanning electron micrograph Methods 0.000 description 4
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- DIIIISSCIXVANO-UHFFFAOYSA-N 1,2-Dimethylhydrazine Chemical compound CNNC DIIIISSCIXVANO-UHFFFAOYSA-N 0.000 description 1
- RZRNAYUHWVFMIP-KTKRTIGZSA-N 1-oleoylglycerol Chemical compound CCCCCCCC\C=C/CCCCCCCC(=O)OCC(O)CO RZRNAYUHWVFMIP-KTKRTIGZSA-N 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
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- 229910052797 bismuth Inorganic materials 0.000 description 1
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- FJBFPHVGVWTDIP-UHFFFAOYSA-N dibromomethane Chemical compound BrCBr FJBFPHVGVWTDIP-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F9/00—Making metallic powder or suspensions thereof
- B22F9/02—Making metallic powder or suspensions thereof using physical processes
- B22F9/04—Making metallic powder or suspensions thereof using physical processes starting from solid material, e.g. by crushing, grinding or milling
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/05—Metallic powder characterised by the size or surface area of the particles
- B22F1/054—Nanosized particles
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F9/00—Making metallic powder or suspensions thereof
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/04—Making non-ferrous alloys by powder metallurgy
- C22C1/0408—Light metal alloys
- C22C1/0416—Aluminium-based alloys
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/04—Making non-ferrous alloys by powder metallurgy
- C22C1/0466—Alloys based on noble metals
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C21/00—Alloys based on aluminium
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C5/00—Alloys based on noble metals
- C22C5/06—Alloys based on silver
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
- C22F1/04—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of aluminium or alloys based thereon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
- H01L31/0512—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module made of a particular material or composition of materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F2998/00—Supplementary information concerning processes or compositions relating to powder metallurgy
- B22F2998/10—Processes characterised by the sequence of their steps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
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Abstract
本發明提供一種用於製造金屬奈米粒子組合物之方法,其包括:(a)提供包括銀及鋁之合金;(b)使該合金經歷第一熱處理以形成經熱處理之合金;(c)冷加工該經熱處理之合金以形成包含該合金之條帶或丸粒;(d)使該等條帶或丸粒在低於440℃之溫度下經歷第二熱處理以形成經熱處理之條帶或丸粒;(e)使該等經熱處理之條帶或丸粒經歷可有效瀝出一部分鋁之瀝濾劑,且形成包含金屬奈米粒子之金屬奈米粒子組合物;及(f)洗滌、過濾且接著乾燥該金屬奈米粒子組合物。
Description
本發明係關於製造金屬奈米粒子組合物。
已發現銀奈米粒子使用於多種電光應用中,包括太陽電池、顯示器及其類似物。舉例而言,銀奈米粒子可併入乳液中。當將乳液塗覆至基板且接著乾燥時,銀奈米粒子自組裝以形成透明、導電之網路,該網路之特徵為界定電池之互連銀金屬跡線。
已知用於製造銀奈米粒子之多種方法。實例包括Khasin等人之U.S.5,476,535;Garbar等人之U.S.7,544,229;及Garbar等人之U.S.8,101,005中所述之方法。在此等三項專利之每一者中,目標均為製備高純度之銀奈米粒子組合物,例如含有至少99重量%銀。
描述一種用於製造金屬奈米粒子組合物之方法。該方法包括:(a)提供包含銀及鋁之合金;(b)使合金經歷第一熱處理以形成經熱處理之合金;(c)冷加工經熱處理之合金以形成包括合金之條帶或丸粒;(d)使條帶或丸粒在低於440℃之溫度下經歷第二熱處理以形成經熱處理之條帶或丸粒;(e)使經熱處理之條帶或丸粒經歷可有效瀝出一部分鋁之瀝濾劑,且形成包括金屬奈米粒子之金屬奈米粒子組合物;及(f)洗滌、過濾且接著乾燥金屬奈米粒子組合物。
如本文所使用,「奈米粒子」為微細粒子,其小足以在液體中分散至其可塗佈且形成均一塗層之程度。此定義包括平均粒徑小於約3微米之粒子。舉例而言,在一些實施例中,平均粒徑小於1微米,且在一些實施例中,粒子在至少一個維度中量測小於0.1微米。
在一些實施例中,第二熱處理之溫度為低於400℃。舉例而言,溫度可在200℃至400℃之範圍內。第一熱處理之溫度可在350℃至500℃之範圍內。合金之鋁含量可在40重量%至97重量%之範圍內。所得經乾燥之金屬奈米粒子組合物包括銀-鋁奈米粒子,其可與銀奈米粒子組合存在。以組合物重量計,經乾燥之金屬奈米粒子組合物的鋁含量可大於1.0重量%。在一些實施例中,以組合物重量計,鋁含量可為至少5重量%或至少10重量%。在其他實施例中,以組合物重量計,鋁含量可在大於1.0重量%至15重量%之範圍內。
瀝濾劑可為鹼或酸。鹼性瀝濾劑之實例包括氫氧化鈉、氫氧化鉀及其組合。酸性瀝濾劑之實例包括乙酸、氫氯酸、甲酸、硫酸、氫氟酸及其組合。
在一些實施例中,可用化學試劑處理經乾燥之金屬奈米粒子組合物以形成經塗佈之組合物,且接著將其去黏聚。代表性化學試劑之實例包括脫水山梨糖醇酯、聚氧化乙烯酯、醇類、丙三醇、聚乙二醇、有機酸、有機酸鹽、有機酸酯、硫醇、膦、低分子量聚合物及其組合。適用之去黏聚方法之實例包括噴射研磨機、機械分散機、機械均質機及超音波均質機。
銀-鋁金屬奈米粒子組合物可併入乳液、分散液、墨水或糊狀物中,且用於製造多種物品,包括光電電池。相較於基本純銀,在奈米粒子組合物中摻雜鋁使組合物尤其適用於光電電池之應用。
在隨附【圖式】及以下【實施方式】中闡述本發明之一或多個實施例之細節。本發明之其他特徵、目標及優點將自【實施方式】及
【圖式】,及自【申請專利範圍】顯而易知。
圖1為根據實例2製備之奈米粒子組合物之掃描電子顯微照片。
圖2為根據實例4製備之奈米粒子組合物之掃描電子顯微照片。
根據【發明內容】中所描述之方法製備銀-鋁金屬奈米粒子組合物。選擇初始銀-鋁合金組合物及第二熱處理之溫度以產生具有不可忽略量之鋁的銀-鋁奈米粒子組合物,例如以奈米粒子組合物之總重量計,數量級為大於1.0重量%。在一些實施例中,以奈米粒子組合物之重量計,鋁之量為至少5重量%或至少10重量%。通常,組合物中鋁之量在大於1.0重量%至15重量%之範圍內。一般而言,第一熱處理之溫度可在350℃至500℃之範圍內。第二熱處理之溫度為小於440℃,且可在200℃至400℃之範圍內。
術語「冷加工」係指設置於物品上之功或力。代表性實例包括按壓、壓縮、壓擠、磨碎、粉碎、研磨、碾磨及其組合。冷加工產生之條帶或丸粒具有可促進隨後瀝濾處理的高表面積與質量比率。條帶厚度之數量級可為約0.1mm至2mm(例如0.3mm至1mm)。
奈米粒子組合物可併入乳液或分散液中。舉例而言,奈米粒子組合物可與玻璃粉粒子合併於液體乳液中,接著在塗覆至鈍化半導體基板背面之後,用於形成透明導電層,該透明導電層自組裝以形成界定電池之一系列互連跡線(例如,線),如2013年5月8日申請之Wong等人共同擁有的U.S.S.N.61/820,852,「Method of Manufacturing Photovoltaic Cells Having a Backside Passivation Layer」中所述,該專利以全文引用之方式併入本文中。
乳液包括連續液相及分散液相,分散液相不可與連續液相混溶且在連續液相內形成分散域。在一些實施方案中,連續相比分散相蒸
發更快。適合乳液之一個實例為油包水乳液,其中水為分散液相且油提供連續相。乳液亦可呈水包油乳液形式,其中油提供分散液相且水提供連續相。
連續相可包括有機溶劑。適合的有機溶劑可包括石油醚、己烷、庚烷、甲苯、苯、二氯乙烷、三氯乙烯、氯仿、二氯甲烷、硝基甲烷、二溴甲烷、環戊酮、環己酮或其任何混合物。較佳地,此連續相中使用之溶劑的特徵為比分散相(例如,水相)更高之揮發性。
適用於分散液相之材料可包括水及/或水可混溶之溶劑,諸如甲醇、乙醇、乙二醇、丙二醇、丙三醇、二甲基甲醯胺、二甲基乙醯胺、乙腈、二甲亞碸、N-甲基吡咯啶酮。
乳液亦可含有至少一種乳化劑、黏合劑或其任何混合物。適合的乳化劑可包括非離子及離子化合物,諸如市售之界面活性劑SPAN®-20(Sigma-Aldrich Co.,St.Louis,MO)、SPAN®-40、SPAN®-60、SPAN®-80(Sigma-Aldrich Co.,St.Louis,MO)、單油酸甘油酯、十二烷基硫酸鈉或其任何組合。適合黏合劑之實例包括改質纖維素,諸如分子量為約100,000至約200,000之乙基纖維素;及改質尿素,例如由BYK-Chemie GmbH(Wesel,Germany)製造之市售BYK®-410、BYK®-411及BYK®-420樹脂。
其他添加劑亦可存在於乳液調配物之油相及/或水相中。舉例而言,添加劑可包括(但不限於)反應性或非反應性稀釋劑、氧氣清除劑、硬塗層成分、抑制劑、穩定劑、著色劑、色素、IR吸收劑、界面活性劑、濕潤劑、調平劑、流量控制劑、搖變或其他流變改質劑、助滑劑、分散助劑、消泡劑、保濕劑及腐蝕抑制劑。
玻璃粉粒子燒穿鈍化層。可獲得多種玻璃粉粒子且其可包括鉛或為無鉛的。玻璃粉可包括金屬氧化物,諸如鉛、鋅、硼、鉍及碲。玻璃粉之粒徑可在奈米尺寸至微米尺寸之範圍內,例如達至5μm或達
至10μm。較佳地,玻璃粉粒徑符合自組裝方法,以使玻璃粉粒子自組裝成網路。就較大玻璃粉粒子而言,在將粒子與乳液合併之前,可採用諸如研磨或碾磨之減小粒徑的方法。玻璃粉粒子可在0.1重量%至10重量%範圍內之濃度下存在於乳液中。
可使用棒塗、浸沒、旋塗、浸漬、槽模塗佈、凹板印刷式塗佈、柔性凸板印刷、噴塗或任何其他適合技術將組合物塗佈於半導體基板上。在一些實施方案中,將均質化之塗佈組合物塗佈於半導體基板上直至達至約1微米至200微米(例如,5微米至200微米)之厚度。
將乳液塗佈於基板上之前,基板可經預處理(例如,塗佈)以改良特定特性。舉例而言,基板可裝備有底塗層以改良基板與所塗乳液之間的黏著。
將乳液塗覆至半導體基板上之後,利用或不利用加熱來蒸發乳液之液體部分。當自乳液移除液體時,奈米粒子自組裝至跡線之網狀圖案中,該等跡線界定對光而言透明的電池。自組裝網路較佳提供低面積覆蓋率(亦即由網路覆蓋的基板面積或面積之百分比)以使由鈍化層覆蓋之面積達到最大,包括低於10%或甚至低於5%之面積覆蓋率。面積覆蓋率係由電池尺寸(亦即網路中之開口)與線寬(亦即網路線之寬度)之組合來確定。自組裝網路可提供比典型印刷方法更窄之線寬,例如小於10μm或甚至小於5μm,從而提供更低之面積覆蓋率。
在一些實施方案中,電池為隨機成形的。在其他實施方案中,執行該方法以產生具有規則圖案之電池。此類方法之一實例描述於2011年6月10日申請之名稱為「Process for Producing Patterned Coatings」的WO 2012/170684中,其讓渡給本申請案之同一受讓人且以全文引用之方式併入本文中。根據此方法,將組合物塗佈於基板(例如,半導體基板)表面上且乾燥以移除液體載劑,同時在塗佈及/或乾燥期間施加外力以使基板選定區域中之分散域相對於連續相選擇性
生長。施加外力促使非揮發性成分(奈米粒子)自組裝且形成呈圖案形式之塗層,該圖案包括界定具有規則間距(例如,規則中心距)之電池的跡線,該間距由外力組態確定。外力之施加可例如藉由在基板表面上沈積組合物,接著使邁爾棒(Mayer rod)在組合物上方通過來實現。或者,可使用凹板滾筒塗覆組合物。在另一實施方案中,可在基板表面上沈積組合物,其後將微影遮罩置放於組合物上方。在遮罩情況下,隨著組合物乾燥,遮罩迫使組合物採用對應於遮罩圖案之圖案。
在各情況下,均係外力控制圖案(特定言之,在乾燥塗層中電池之間的中心距)。然而,界定電池之跡線之寬度不直接受外力控制。相反地,乳液特性及乾燥條件為跡線寬度之主要決定因素。以此方式,可無需開發方法、原件及具有極微細線寬之材料的困難與費用而容易地製造實質上比外力更窄的線。可用乳化及乾燥方法生成微細之線寬。然而,可(容易且低成本地)使用外力控制網路電池之尺寸、間距及定向。
移除液體且形成自組裝層之後,可使用諸如熱、機械、輻射或化學燒結或其組合之已知技術來燒結該層。
移除液體、形成自組裝層且經歷任何視情況選用之燒結處理之後,可沈積電極層,例如用導電糊狀物或墨水進行網版印刷。金屬導電糊狀物包括鋁或銀糊狀物。電極可為完全覆蓋(例如,在太陽電池之背面上)或可為部分覆蓋以使光穿過電極(例如,太陽電池正面上之透明電極)。在鈍化之背面上完全覆蓋之電極的情況下,金屬糊狀物不含諸如玻璃粉之燒穿成分為較佳的。在雙面太陽電池情況下,可在電池兩個表面上均設置部分覆蓋之電極以使光自任一側穿透。
沈積電極之後,在適當高溫下燃燒或共燒物品以完成以下步驟中之一或多者:烤化有機材料(例如,黏合劑或溶劑)、燒穿、燒結、退火及合金化,以提供層之間的良好歐姆接觸。溫度可逐漸上升或階
梯式上升達至峰值溫度(例如,700℃至900℃)。峰值溫度通常保持數秒與1分鐘之間的短暫時期。
稱取840公克鋁丸粒(99.99%純,標稱直徑0.95cm,C-KOE Metals L.P.,Dallas,TX)置於內部含有石墨之陶瓷坩堝中。將坩堝在氬氣流(約1L/min氬氣)下置放於60%功率之感應爐(Opdel FS10感應爐,Opticom,Italy)中直至所有鋁已熔融,約6min-7min。將360公克銀丸
粒(銀顆粒,99.99%之純度,Umicore N.V.,Belgium)添加至爐內之熔融鋁中,且使用石墨攪拌棒攪拌若干次直至銀已熔融,約3min-4min,以形成均質熔體。立即將熔體澆鑄至鋼模具中以形成250×115×15mm之鑄錠。
第一熱處理:將鑄錠置放於設定為400℃之電爐(Series K750,Heraeus GmbH,Germany)中且於該溫度保持2小時。關閉電爐且在移除之前使鑄錠緩慢冷卻。
使用輥壓機(BW-250,Carl Wezel KG,Germany)使鑄錠反覆穿過輥,緩慢減小鑄錠厚度以形成1mm之條帶。將經輥壓之條帶切割成更短長度用於進一步熱處理。
第二熱處理:將電爐設定為200℃,將經輥壓之條帶置放於電爐中且於200℃保持4小時。自電爐移除經熱處理之條帶且在25℃或低於25℃之去離子水中快速淬滅10min至20min。
在第二熱處理之同一天,在去離子水中使用5%(重量/重量)氫氧化鈉,藉由浸沒帶材直至其表面上形成氣泡來首先對條帶進行表面清潔,約2min至3min。就表面清潔及瀝濾而言,約62g條帶使用約2公升NaOH溶液。立即移除條帶且用去離子水沖洗。隨後,在去離子水中,於約室溫(歸因於製程之放熱性質,液體溫度在整個製程中提高)下,使用25%(重量/重量)氫氧化鈉瀝濾條帶8hr至10hr,形成黑色粉末。用去離子水反覆傾析且置換瀝濾溶液直至pH為約中性。接著在40℃之烘箱中乾燥黑色粉末約24hr。接著經由500μm之篩篩分經乾燥之粉末以形成最終之奈米粒子組合物。
由ICP測定之奈米粒子組合物之鋁含量為14.50重量%。
使用溫度為250℃之第二熱處理重複實例1之程序。由ICP測定之鋁含量為13.70重量%。
圖1為所得粉末之掃描電子顯微照片,展示藉由該方法製造之粒子摻合物。較大粒子(例如,1μm至2μm)為銀-鋁粒子,而較小粒子(例如50nm至100nm)由99+%銀組成。
使用能量分散式x射線光譜術(Energy dispersive x-ray spectroscopy,EDS,EDAX,Inc.,Mahwah,NJ)來分析所得粉末中之較大粒子。藉由聚焦於單個粒子來分析摻合物中之3個較大粒子。校正結果以排除碳及氧,因此計算中僅包括鋁及銀,該等3個大粒子含有13.31重量%、13.82重量%及13.16重量%之鋁。
儘管EDS之尺寸解析度不能提供單個較小粒子之資料,但可將焦點移動至含有較小粒子群的所得粉末之區域中。此等3個區域含有11.87重量%、8.92重量%及12.96重量%之鋁,表明較小粒子銀含量更高。
使用溫度為400℃之第二熱處理重複實例1之程序。由ICP測定之鋁含量為11.63重量%。
使用溫度為500℃之第二熱處理重複實例1之程序。由ICP測定之鋁含量為0.35重量%。
圖2為所得粉末之掃描電子顯微照片,展示使用500℃之第二熱處理藉由該方法製造主要之較小粒子。
使用溫度為220℃之第二熱處理重複實例1之程序。由ICP測定之鋁含量為13.5重量%。此等奈米粒子用於實例6之乳液中。
自Tianwei Corporation,China獲得多晶矽晶圓(厚度200μm,156×156mm)。晶圓正面已經表面紋理化、經磷擴散以形成n型層(薄
層電阻為70歐姆/平方)且塗有80nm氮化矽抗反射塗層。晶圓之背面已塗有40nm氮氧化矽層及隨後之40nm氮化矽層(電漿增強式化學氣相沈積)。
使用厚約8μm之底塗溶液(含有0.6重量% Synperonic NP-30及0.3重量%聚[二甲基矽氧烷-共-[3-(2-(2-羥基乙氧基)乙氧基)丙基]甲基矽氧烷]之99.1重量%丙酮)之濕塗層對晶圓之背面進行底塗。用邁爾棒塗覆底塗劑且使其風乾。
如下製備乳液:首先混合表5中所示之成分及音波處理直至均一以形成溶液A。隨後,將23.5公克BYK-348溶液(去離子水中0.04重量%)添加至溶液A中且音波處理直至均一以形成溶液B。最後,將0.17g BYK-106及0.32g Disperbyk-2025溶液(甲苯中0.1重量%)添加至溶液B中且混合以形成最終乳液。
隨後,用上述乳液塗佈經底塗之晶圓背面。使用邁爾棒將乳液塗佈成厚約20μm至30μm之濕塗層,且使該塗層乾燥,在此期間網路自組裝。首先將經塗佈之晶圓放入50℃之烘箱中約1分鐘,接著將其放入150℃之烘箱中20分鐘。
隨後,使用銀糊狀物對背面匯流排進行網版印刷且使用鋁糊狀物對完全覆蓋之鋁電極進行網版印刷。使用銀糊狀物印刷正面電極(H-網格)。
隨後使用300℃至350℃之烘烤步驟、450℃至600℃之有機燒化及合金化步驟、600℃至700℃之預加熱步驟及800℃至900℃之燒穿步驟來烘烤且共燒晶圓,最終溫度短暫維持60sec以內。最後,完成雷射邊緣隔離蝕刻。
使用日光模擬器、藉由標準太陽電池試驗方法來測試樣品,結果展示於表6中。結果顯示,含有銀-鋁奈米粒子之乳液能夠燒穿鈍化層,由此建立歐姆接觸。
已描述本發明之多個實施例。儘管如此,應理解可在不背離本發明之精神及範疇之情況下進行各種修改。因此,其他實施例處於以下申請專利範圍之範疇內。
Claims (19)
- 一種製造金屬奈米粒子組合物之方法,其包含:(a)提供包含銀及鋁之合金;(b)使該合金經歷第一熱處理以形成經熱處理之合金;(c)冷加工該經熱處理之合金以形成包含該合金之條帶或丸粒;(d)使該等條帶或丸粒在低於440℃之溫度下經歷第二熱處理,以形成經熱處理之條帶或丸粒;(e)使該等經熱處理之條帶或丸粒經歷可有效瀝出一部分鋁之瀝濾劑,且形成包含金屬奈米粒子之金屬奈米粒子組合物;及(f)洗滌、過濾且接著乾燥該金屬奈米粒子組合物。
- 如請求項1之方法,其包含使該等條帶或丸粒在低於400℃之溫度下經歷第二熱處理。
- 如請求項1之方法,其包含使該等條帶或丸粒在200℃與400℃之間的溫度下經歷第二熱處理。
- 如請求項1之方法,其中該合金包括40重量%與97重量%之間的鋁。
- 如請求項1之方法,其中該經乾燥之金屬奈米粒子組合物包含銀-鋁奈米粒子。
- 如請求項5之方法,其中該經乾燥之金屬奈米粒子組合物包含銀奈米粒子及銀-鋁奈米粒子。
- 如請求項5之方法,其中以該組合物重量計,該經乾燥之金屬奈米粒子組合物的鋁含量大於1.0重量%。
- 如請求項5之方法,其中以該組合物重量計,該經乾燥之金屬奈米粒子組合物的鋁含量為至少5重量%。
- 如請求項5之方法,其中以該組合物重量計,該經乾燥之金屬奈米粒子組合物的鋁含量為至少10重量%。
- 如請求項5之方法,其中以該組合物重量計,該經乾燥之金屬奈米粒子組合物的鋁含量在大於1.0重量%與15重量%之間。
- 如請求項1之方法,其中該瀝濾劑係選自由以下組成之群:氫氧化鈉、氫氧化鉀及其組合。
- 如請求項1之方法,其中該瀝濾劑係選自由以下組成之群:乙酸、氫氯酸、甲酸、硫酸、氫氟酸及其組合。
- 如請求項1之方法,其進一步包含用化學試劑處理該經乾燥之金屬奈米粒子組合物,以形成經塗佈之金屬奈米粒子組合物,且接著使該經塗佈之金屬奈米粒子組合物去黏聚。
- 一種根據請求項1之方法製備的金屬奈米粒子組合物。
- 一種金屬奈米粒子組合物,其包含銀奈米粒子及銀-鋁奈米粒子,其中以該組合物重量計,該組合物之鋁含量大於1.0重量%。
- 如請求項15之金屬奈米粒子組合物,其中以該組合物重量計,該組合物之鋁含量為至少5重量%。
- 如請求項15之金屬奈米粒子組合物,其中以該組合物重量計,該組合物之鋁含量為至少10重量%。
- 如請求項15之金屬奈米粒子組合物,其中以該組合物重量計,該組合物之鋁含量在大於1.0重量%與15重量%之間。
- 一種用於製造光電電池之方法,其包含:(a)提供具有背面鈍化層之半導體基板;(b)將包含玻璃粉粒子及如請求項15之金屬奈米粒子組合物的自組裝乳液塗佈至該背面鈍化層上;(c)使該乳液自組裝成界定電池之跡線網路; (d)在該網路上方形成電極以產生前驅體電池;及(e)燃燒該前驅體電池以使該網路燒穿該鈍化層且在該半導體基板與該電極之間建立電接觸。
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