JP6219374B2 - 荷電粒子リソグラフィシステムおよびビーム発生器 - Google Patents

荷電粒子リソグラフィシステムおよびビーム発生器 Download PDF

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Publication number
JP6219374B2
JP6219374B2 JP2015512040A JP2015512040A JP6219374B2 JP 6219374 B2 JP6219374 B2 JP 6219374B2 JP 2015512040 A JP2015512040 A JP 2015512040A JP 2015512040 A JP2015512040 A JP 2015512040A JP 6219374 B2 JP6219374 B2 JP 6219374B2
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Prior art keywords
charged particle
particle beam
cooling
beam generator
chamber
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Japanese (ja)
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JP2015517735A (ja
Inventor
ファン・フェーン、アレクサンダー・ヘンドリク・ビンセント
ウルバヌス、ウィレム・ヘンク
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マッパー・リソグラフィー・アイピー・ビー.ブイ.
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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/09—Diaphragms; Shields associated with electron or ion-optical arrangements; Compensation of disturbing fields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/3002—Details
    • H01J37/3007—Electron or ion-optical systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/302—Controlling tubes by external information, e.g. program control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/002—Cooling arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/026—Shields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/026—Shields
    • H01J2237/0262—Shields electrostatic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/026—Shields
    • H01J2237/0264—Shields magnetic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/16—Vessels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/18—Vacuum control means
    • H01J2237/182—Obtaining or maintaining desired pressure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/18—Vacuum control means
    • H01J2237/188—Differential pressure

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Electron Sources, Ion Sources (AREA)
JP2015512040A 2012-05-14 2013-05-14 荷電粒子リソグラフィシステムおよびビーム発生器 Active JP6219374B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201261646839P 2012-05-14 2012-05-14
US61/646,839 2012-05-14
PCT/EP2013/059963 WO2013171229A1 (en) 2012-05-14 2013-05-14 Charged particle lithography system and beam generator

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2017184957A Division JP6430606B2 (ja) 2012-05-14 2017-09-26 荷電粒子ビーム発生器の高電圧シールド及び冷却

Publications (2)

Publication Number Publication Date
JP2015517735A JP2015517735A (ja) 2015-06-22
JP6219374B2 true JP6219374B2 (ja) 2017-10-25

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JP2015512040A Active JP6219374B2 (ja) 2012-05-14 2013-05-14 荷電粒子リソグラフィシステムおよびビーム発生器
JP2015512032A Active JP6239596B2 (ja) 2012-05-14 2013-05-14 荷電粒子リソグラフィシステムおよびビーム発生器
JP2017184957A Active JP6430606B2 (ja) 2012-05-14 2017-09-26 荷電粒子ビーム発生器の高電圧シールド及び冷却

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JP2017184957A Active JP6430606B2 (ja) 2012-05-14 2017-09-26 荷電粒子ビーム発生器の高電圧シールド及び冷却

Country Status (8)

Country Link
US (2) US9653261B2 (cg-RX-API-DMAC10.html)
EP (1) EP2852966A1 (cg-RX-API-DMAC10.html)
JP (3) JP6219374B2 (cg-RX-API-DMAC10.html)
KR (2) KR102023056B1 (cg-RX-API-DMAC10.html)
CN (3) CN104428866A (cg-RX-API-DMAC10.html)
NL (4) NL2010797C2 (cg-RX-API-DMAC10.html)
TW (2) TWI604493B (cg-RX-API-DMAC10.html)
WO (2) WO2013171229A1 (cg-RX-API-DMAC10.html)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL2014029B1 (en) * 2013-12-30 2016-01-08 Mapper Lithography Ip Bv Cathode arrangement, electron gun, and lithography system comprising such electron gun.
US10290528B2 (en) * 2014-06-13 2019-05-14 Intel Corporation Ebeam align on the fly
JP2017135218A (ja) * 2016-01-26 2017-08-03 株式会社アドバンテスト 荷電粒子ビームレンズ装置、荷電粒子ビームカラム、および荷電粒子ビーム露光装置
JP2017139339A (ja) * 2016-02-04 2017-08-10 株式会社アドバンテスト 露光装置
US9981293B2 (en) 2016-04-21 2018-05-29 Mapper Lithography Ip B.V. Method and system for the removal and/or avoidance of contamination in charged particle beam systems
US10453645B2 (en) * 2016-12-01 2019-10-22 Applied Materials Israel Ltd. Method for inspecting a specimen and charged particle multi-beam device
US10206273B2 (en) * 2017-01-18 2019-02-12 Phoenix Llc High power ion beam generator systems and methods
US10176967B2 (en) * 2017-02-23 2019-01-08 Hermes Microvision, Inc. Load lock system for charged particle beam imaging
NL2021217B1 (en) * 2018-06-29 2020-01-07 Asml Netherlands Bv Substrate exposure system and a frame therefore
DE102019005362A1 (de) * 2019-07-31 2021-02-04 Carl Zeiss Multisem Gmbh Verfahren zum Betreiben eines Vielzahl-Teilchenstrahlsystems unter Veränderung der numerischen Apertur, zugehöriges Computerprogrammprodukt und Vielzahl-Teilchenstrahlsystem
JP2021039880A (ja) * 2019-09-03 2021-03-11 株式会社日立ハイテク 荷電粒子線装置
JP7799683B2 (ja) * 2020-09-07 2026-01-15 エーエスエムエル ネザーランズ ビー.ブイ. 電磁シールドを備えた電子光学アセンブリ
WO2023197131A1 (zh) * 2022-04-12 2023-10-19 华为技术有限公司 一种可调整的多电极准直装置
EP4307338B1 (en) * 2022-07-12 2024-11-27 Comet AG Radio frequency generator

Family Cites Families (73)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3157308A (en) 1961-09-05 1964-11-17 Clark Mfg Co J L Canister type container and method of making the same
US3159408A (en) 1961-10-05 1964-12-01 Grace W R & Co Chuck
US3924136A (en) * 1975-02-18 1975-12-02 Stanford Research Inst Charged particle apodized pattern imaging and exposure system
US4142133A (en) * 1976-10-20 1979-02-27 Balandin Genrikh D Cathode-ray tube with variable energy of beam electrons
DE3231036A1 (de) * 1982-08-20 1984-02-23 Max Planck Gesellschaft Kombinierte elektrostatische objektiv- und emissionslinse
US4524308A (en) 1984-06-01 1985-06-18 Sony Corporation Circuits for accomplishing electron beam convergence in color cathode ray tubes
WO1994025880A1 (en) 1993-04-30 1994-11-10 Board Of Regents, The University Of Texas System Megavoltage scanning imager and method for its use
JP3253429B2 (ja) 1993-09-17 2002-02-04 富士通株式会社 電子ビーム装置
EP0766405A1 (en) 1995-09-29 1997-04-02 STMicroelectronics S.r.l. Successive approximation register without redundancy
JP3763446B2 (ja) * 1999-10-18 2006-04-05 キヤノン株式会社 静電レンズ、電子ビーム描画装置、荷電ビーム応用装置、および、デバイス製造方法
TW521295B (en) * 1999-12-13 2003-02-21 Semequip Inc Ion implantation ion source, system and method
KR100465117B1 (ko) * 2000-04-04 2005-01-05 주식회사 아도반테스토 다축전자렌즈를 이용한 멀티빔 노광장치, 복수의 전자빔을집속하는 다축전자렌즈, 반도체소자 제조방법
JP3728217B2 (ja) * 2000-04-27 2005-12-21 キヤノン株式会社 荷電粒子線露光装置およびデバイス製造方法
GB0029040D0 (en) * 2000-11-29 2001-01-10 Micromass Ltd Orthogonal time of flight mass spectrometer
JP2002217091A (ja) * 2001-01-19 2002-08-02 Nikon Corp 荷電粒子線露光装置
JP4156809B2 (ja) * 2001-01-31 2008-09-24 株式会社アドバンテスト 電子ビーム露光装置及び電子レンズ
US6797953B2 (en) 2001-02-23 2004-09-28 Fei Company Electron beam system using multiple electron beams
US6768125B2 (en) 2002-01-17 2004-07-27 Ims Nanofabrication, Gmbh Maskless particle-beam system for exposing a pattern on a substrate
CN100359626C (zh) * 2002-06-15 2008-01-02 Nfab有限公司 粒子束发生器
JP2004063547A (ja) 2002-07-25 2004-02-26 Nikon Corp 真空雰囲気下露光装置
EP1388883B1 (en) * 2002-08-07 2013-06-05 Fei Company Coaxial FIB-SEM column
KR101368027B1 (ko) 2002-10-25 2014-02-26 마퍼 리쏘그라피 아이피 비.브이. 리소그라피 장치
EP3671804A1 (en) 2002-10-30 2020-06-24 ASML Netherlands B.V. Electron beam exposure system
JP2004214480A (ja) 2003-01-07 2004-07-29 Nikon Corp 露光装置
WO2004081910A2 (en) 2003-03-10 2004-09-23 Mapper Lithography Ip B.V. Apparatus for generating a plurality of beamlets
JP4113032B2 (ja) * 2003-04-21 2008-07-02 キヤノン株式会社 電子銃及び電子ビーム露光装置
EP1830384B1 (en) 2003-05-28 2011-09-14 Mapper Lithography Ip B.V. Charged particle beamlet exposure system
EP1491955A1 (en) * 2003-06-27 2004-12-29 ASML Netherlands B.V. Lithographic projection apparatus and device manufacturing method
EP1498930A1 (en) 2003-07-14 2005-01-19 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Charged particle beam device with multi-source array
WO2005010618A2 (en) 2003-07-30 2005-02-03 Mapper Lithography Ip B.V. Modulator circuitry
GB2406704B (en) 2003-09-30 2007-02-07 Ims Nanofabrication Gmbh Particle-optic electrostatic lens
JP2005127800A (ja) 2003-10-22 2005-05-19 Toshiba Corp 電子線照射装置と照射方法および電子線描画装置
JP4406311B2 (ja) 2004-03-31 2010-01-27 株式会社荏原製作所 エネルギー線照射装置およびそれを用いたパタン作成方法
JP4547997B2 (ja) 2004-06-04 2010-09-22 株式会社ニコン 真空容器、露光装置、及び検査装置
CN100477134C (zh) * 2004-10-21 2009-04-08 Hoya株式会社 微粒子沉积装置、微粒子沉积方法及发光元件的制造方法
JP2006139958A (ja) * 2004-11-10 2006-06-01 Toshiba Corp 荷電ビーム装置
JP3929459B2 (ja) 2004-11-11 2007-06-13 株式会社日立ハイテクノロジーズ 荷電粒子線露光装置
WO2006053360A1 (en) * 2004-11-17 2006-05-26 Ims Nanofabrication Gmbh Registering device and method for a pattern lock system in a particle-beam exposure apparatus
GB0425290D0 (en) * 2004-11-17 2004-12-15 Eastham Derek A Focussing masks
US7709815B2 (en) 2005-09-16 2010-05-04 Mapper Lithography Ip B.V. Lithography system and projection method
JP4732917B2 (ja) * 2006-02-15 2011-07-27 株式会社日立ハイテクノロジーズ 走査型電子顕微鏡及び欠陥検出装置
US7521687B2 (en) 2006-03-30 2009-04-21 Tokyo Electron Limited Static electricity deflecting device, electron beam irradiating apparatus, substrate processing apparatus, substrate processing method and method of manufacturing substrate
JP4533344B2 (ja) 2006-05-19 2010-09-01 キヤノン株式会社 真空装置、露光装置、及びデバイス製造方法
EP1983548A1 (en) 2007-04-20 2008-10-22 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Emitter chamber, charged particle apparatus and method for operating same
JP5497980B2 (ja) * 2007-06-29 2014-05-21 株式会社日立ハイテクノロジーズ 荷電粒子線応用装置、及び試料検査方法
WO2009026970A1 (en) * 2007-08-24 2009-03-05 Carl Zeiss Smt Ag Controllable optical element and method for operating an optical element with thermal actuators and projection exposure apparatus for semiconductor lithography
KR101481950B1 (ko) * 2008-02-26 2015-01-14 마퍼 리쏘그라피 아이피 비.브이. 투사 렌즈 배열체
US8445869B2 (en) 2008-04-15 2013-05-21 Mapper Lithography Ip B.V. Projection lens arrangement
CN102017053B (zh) 2008-02-26 2014-04-02 迈普尔平版印刷Ip有限公司 投影透镜装置
CN102105960B (zh) 2008-05-23 2014-01-29 迈普尔平版印刷Ip有限公司 成像系统
EP2297766B1 (en) 2008-06-04 2016-09-07 Mapper Lithography IP B.V. Writing strategy
JP5250350B2 (ja) * 2008-09-12 2013-07-31 株式会社日立ハイテクノロジーズ 荷電粒子線応用装置
KR101649106B1 (ko) 2008-10-01 2016-08-19 마퍼 리쏘그라피 아이피 비.브이. 정전기 렌즈 구조
US10054754B2 (en) * 2009-02-04 2018-08-21 Nikon Corporation Thermal regulation of vibration-sensitive objects with conduit circuit having liquid metal, pump, and heat exchanger
DE102009009221A1 (de) * 2009-02-17 2010-08-26 Carl Zeiss Smt Ag Projektionsbelichtungsanlage für die Halbleiterlithographie mit einem Aktuatorsystem
KR101553802B1 (ko) 2009-02-22 2015-09-17 마퍼 리쏘그라피 아이피 비.브이. 진공 챔버에서 진공을 실현하기 위한 장치 및 방법
JP5539406B2 (ja) 2009-02-22 2014-07-02 マッパー・リソグラフィー・アイピー・ビー.ブイ. リソグラフィマシン及び基板処理構成体
JP5680557B2 (ja) * 2009-02-22 2015-03-04 マッパー・リソグラフィー・アイピー・ビー.ブイ. 荷電粒子リソグラフィ装置
JP2010282799A (ja) 2009-06-03 2010-12-16 Canon Inc 荷電粒子線描画装置およびデバイス製造方法
US8426835B2 (en) * 2009-06-16 2013-04-23 Hitachi High-Technologies Corporation Charged particle radiation device
US8624478B2 (en) 2009-10-09 2014-01-07 Mapper Lithography Ip B.V. High voltage shielding arrangement of a charged particle lithography system
GB201003566D0 (en) * 2010-03-03 2010-04-21 Ilika Technologies Ltd Mass spectrometry apparatus and methods
GB2481883B (en) * 2010-06-08 2015-03-04 Micromass Ltd Mass spectrometer with beam expander
WO2012062854A1 (en) * 2010-11-13 2012-05-18 Mapper Lithography Ip B.V. Lithography system and method of refracting
EP2638559B1 (en) 2010-11-13 2016-07-20 Mapper Lithography IP B.V. Charged particle beam modulator
JP6049627B2 (ja) 2010-11-13 2016-12-21 マッパー・リソグラフィー・アイピー・ビー.ブイ. 中間チャンバを備えた荷電粒子リソグラフィシステム
JP5709535B2 (ja) * 2011-01-07 2015-04-30 キヤノン株式会社 電子ビーム描画装置、およびそれを用いた物品の製造方法
JP5822535B2 (ja) * 2011-05-16 2015-11-24 キヤノン株式会社 描画装置、および、物品の製造方法
JP2013008534A (ja) * 2011-06-23 2013-01-10 Canon Inc 荷電粒子線レンズ用電極
JP2013171925A (ja) * 2012-02-20 2013-09-02 Canon Inc 荷電粒子線装置、それを用いた物品の製造方法
EP2850635B1 (en) 2012-05-14 2016-04-27 Mapper Lithography IP B.V. Charged particle multi-beamlet lithography system and cooling arrangement manufacturing method
JP2014116518A (ja) * 2012-12-11 2014-06-26 Canon Inc 描画装置及び物品の製造方法
EP3279624B1 (en) 2015-04-03 2019-08-28 Hitachi High-Technologies Corporation Light quantity detection device, and immunoanalysis device and charged particle beam device using same

Also Published As

Publication number Publication date
CN107359101B (zh) 2019-07-12
EP2852966A1 (en) 2015-04-01
CN104520968A (zh) 2015-04-15
JP6430606B2 (ja) 2018-11-28
JP6239596B2 (ja) 2017-11-29
KR102023056B1 (ko) 2019-09-20
US20150124229A1 (en) 2015-05-07
WO2013171214A1 (en) 2013-11-21
NL2010802C2 (en) 2014-08-25
US20170250053A1 (en) 2017-08-31
CN104520968B (zh) 2017-07-07
JP2015517735A (ja) 2015-06-22
NL2010797C2 (en) 2014-08-21
NL2013320A (en) 2014-11-24
US9653261B2 (en) 2017-05-16
NL2013321C2 (en) 2015-05-07
TW201401331A (zh) 2014-01-01
NL2013321A (en) 2014-11-06
TW201401330A (zh) 2014-01-01
TWI604493B (zh) 2017-11-01
JP2015516690A (ja) 2015-06-11
CN104428866A (zh) 2015-03-18
CN107359101A (zh) 2017-11-17
NL2013320C2 (en) 2015-06-15
NL2010797A (en) 2013-11-18
JP2018041964A (ja) 2018-03-15
KR20150010993A (ko) 2015-01-29
KR20150010994A (ko) 2015-01-29
US10037864B2 (en) 2018-07-31
NL2010802A (en) 2013-11-18
KR101961914B1 (ko) 2019-03-25
WO2013171229A1 (en) 2013-11-21

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