JP6186205B2 - 撮像素子および撮像装置 - Google Patents

撮像素子および撮像装置 Download PDF

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Publication number
JP6186205B2
JP6186205B2 JP2013168930A JP2013168930A JP6186205B2 JP 6186205 B2 JP6186205 B2 JP 6186205B2 JP 2013168930 A JP2013168930 A JP 2013168930A JP 2013168930 A JP2013168930 A JP 2013168930A JP 6186205 B2 JP6186205 B2 JP 6186205B2
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Japan
Prior art keywords
photoelectric conversion
pixel
region
film
conductive film
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Expired - Fee Related
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JP2013168930A
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English (en)
Japanese (ja)
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JP2015037154A5 (https=
JP2015037154A (ja
Inventor
高橋　裕嗣
裕嗣 高橋
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Sony Semiconductor Solutions Corp
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Sony Semiconductor Solutions Corp
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Priority to JP2013168930A priority Critical patent/JP6186205B2/ja
Priority to CN201410360049.8A priority patent/CN104377215B/zh
Priority to US14/341,476 priority patent/US9391103B2/en
Publication of JP2015037154A publication Critical patent/JP2015037154A/ja
Publication of JP2015037154A5 publication Critical patent/JP2015037154A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8033—Photosensitive area
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses

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  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Light Receiving Elements (AREA)
JP2013168930A 2013-08-15 2013-08-15 撮像素子および撮像装置 Expired - Fee Related JP6186205B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2013168930A JP6186205B2 (ja) 2013-08-15 2013-08-15 撮像素子および撮像装置
CN201410360049.8A CN104377215B (zh) 2013-08-15 2014-07-25 摄像元件和摄像装置
US14/341,476 US9391103B2 (en) 2013-08-15 2014-07-25 Image pickup element and image pickup device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013168930A JP6186205B2 (ja) 2013-08-15 2013-08-15 撮像素子および撮像装置

Publications (3)

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JP2015037154A JP2015037154A (ja) 2015-02-23
JP2015037154A5 JP2015037154A5 (https=) 2016-04-07
JP6186205B2 true JP6186205B2 (ja) 2017-08-23

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JP2013168930A Expired - Fee Related JP6186205B2 (ja) 2013-08-15 2013-08-15 撮像素子および撮像装置

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US (1) US9391103B2 (https=)
JP (1) JP6186205B2 (https=)
CN (1) CN104377215B (https=)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015076475A (ja) * 2013-10-08 2015-04-20 ソニー株式会社 固体撮像装置およびその製造方法、並びに電子機器
JP6530664B2 (ja) * 2015-07-22 2019-06-12 ソニーセミコンダクタソリューションズ株式会社 撮像装置及びその製造方法
JP6808317B2 (ja) * 2015-12-04 2021-01-06 キヤノン株式会社 撮像装置、および、撮像システム
JP7020770B2 (ja) * 2015-12-04 2022-02-16 キヤノン株式会社 撮像装置、および、撮像システム
JP6808316B2 (ja) * 2015-12-04 2021-01-06 キヤノン株式会社 撮像装置、および、撮像システム
JP6903896B2 (ja) * 2016-01-13 2021-07-14 ソニーグループ株式会社 受光素子の製造方法
JP2017174936A (ja) * 2016-03-23 2017-09-28 ソニー株式会社 固体撮像素子及び電子機器
JP2018037611A (ja) 2016-09-02 2018-03-08 ソニーセミコンダクタソリューションズ株式会社 受光素子、受光素子の製造方法、撮像素子および電子機器
JP7121468B2 (ja) * 2017-02-24 2022-08-18 ブリルニクス シンガポール プライベート リミテッド 固体撮像装置、固体撮像装置の製造方法、および電子機器
CN115332278B (zh) * 2017-06-21 2025-05-30 索尼半导体解决方案公司 成像元件、层叠式成像元件和固态成像装置
JP7099073B2 (ja) * 2017-06-21 2022-07-12 ソニーグループ株式会社 撮像素子、積層型撮像素子及び固体撮像装置
JP7603382B2 (ja) * 2019-11-18 2024-12-20 ソニーセミコンダクタソリューションズ株式会社 撮像素子および撮像素子の製造方法
CN116564977A (zh) * 2022-01-28 2023-08-08 华为技术有限公司 背照式图像传感器及其制作方法、电子设备

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0614543B2 (ja) * 1985-03-11 1994-02-23 富士写真フイルム株式会社 固体撮像デバイス
JP2007123721A (ja) 2005-10-31 2007-05-17 Rohm Co Ltd 光電変換装置の製造方法および光電変換装置
JP2008093834A (ja) 2006-10-06 2008-04-24 Tokyo Printing Ink Mfg Co Ltd 湿し水濃縮組成物
JPWO2008093834A1 (ja) 2007-02-02 2010-05-20 ローム株式会社 固体撮像装置およびその製造方法
JP5322469B2 (ja) 2007-09-07 2013-10-23 トゥクサン ハイ‐メタル シーオー エルティディ 耐落下衝撃性に優れたはんだ合金、およびそれを用いたはんだボール、ならびにはんだ接合部
US8362527B2 (en) 2007-12-19 2013-01-29 Rohm Co., Ltd. Solid-state imaging device and fabrication method thereof
JP2011159848A (ja) * 2010-02-02 2011-08-18 Toshiba Corp 固体撮像装置およびその製造方法
JP5509962B2 (ja) * 2010-03-19 2014-06-04 ソニー株式会社 固体撮像装置、および、その製造方法、電子機器
JP5651986B2 (ja) * 2010-04-02 2015-01-14 ソニー株式会社 固体撮像装置とその製造方法、並びに電子機器及びカメラモジュール
JP5585232B2 (ja) * 2010-06-18 2014-09-10 ソニー株式会社 固体撮像装置、電子機器
JP2012114166A (ja) * 2010-11-22 2012-06-14 Canon Inc 検出装置及び放射線検出システム
JP2012114160A (ja) * 2010-11-22 2012-06-14 Panasonic Corp 固体撮像装置及びその製造方法
JP2012156310A (ja) * 2011-01-26 2012-08-16 Sony Corp 固体撮像素子、固体撮像素子の製造方法、および電子機器
JP2013084647A (ja) * 2011-10-06 2013-05-09 Nippon Hoso Kyokai <Nhk> 多層型撮像素子
WO2013088352A2 (en) * 2011-12-13 2013-06-20 Koninklijke Philips Electronics N.V. Radiation detector
KR20140125762A (ko) * 2012-01-23 2014-10-29 소니 주식회사 고체 촬상 장치 및 고체 촬상 장치의 제조 방법, 전자 기기

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Publication number Publication date
CN104377215B (zh) 2019-08-09
CN104377215A (zh) 2015-02-25
JP2015037154A (ja) 2015-02-23
US9391103B2 (en) 2016-07-12
US20150048473A1 (en) 2015-02-19

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