JP6184493B2 - 撮像装置の製造方法 - Google Patents
撮像装置の製造方法 Download PDFInfo
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- 125000006850 spacer group Chemical group 0.000 claims description 75
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 62
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 62
- 229910021332 silicide Inorganic materials 0.000 claims description 53
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 53
- 239000002184 metal Substances 0.000 claims description 49
- 229910052751 metal Inorganic materials 0.000 claims description 49
- 230000015572 biosynthetic process Effects 0.000 claims description 46
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 26
- 238000002955 isolation Methods 0.000 claims description 24
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- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
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- LXEXBJXDGVGRAR-UHFFFAOYSA-N trichloro(trichlorosilyl)silane Chemical compound Cl[Si](Cl)(Cl)[Si](Cl)(Cl)Cl LXEXBJXDGVGRAR-UHFFFAOYSA-N 0.000 description 3
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 239000013256 coordination polymer Substances 0.000 description 2
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- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
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- Solid State Image Pick-Up Elements (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Description
ここでは、二層構造のオフセットスペーサ膜をそのまま残し、二層構造のサイドウォール絶縁膜を形成する場合について説明する。
ここでは、二層構造のオフセットスペーサ膜を形成した後、下層膜のシリコン酸化膜を残して上層膜のシリコン窒化膜を除去し、二層構造のサイドウォール絶縁膜を形成する場合について説明する。なお、前述した撮像装置の構成と同一部材には同一符号を付し、必要である場合を除きその説明を繰り返さないこととする。
ここでは、二層構造のオフセットスペーサ膜をそのまま残し、単層構造のサイドウォール絶縁膜を形成する場合について説明する。なお、実施の形態1において説明した撮像装置の構成と同一部材には同一符号を付し、必要である場合を除きその説明を繰り返さないこととする。
ここでは、二層構造のオフセットスペーサ膜を形成した後、下層膜のシリコン酸化膜を残して上層膜のシリコン窒化膜を除去し、単層構造のサイドウォール絶縁膜を形成する場合について説明する。なお、実施の形態1において説明した撮像装置の構成と同一部材には同一符号を付し、必要である場合を除きその説明を繰り返さないこととする。
Claims (7)
- 半導体基板にトレンチを形成する工程と、
前記トレンチに素子分離絶縁膜を形成することにより、複数の素子形成領域を規定する工程と、
複数の前記素子形成領域のそれぞれに、半導体素子を形成する工程と
を有し、
前記半導体素子を形成する工程は、
光電変換部を形成する工程と、
前記光電変換部において生成された電荷を信号として処理する、ゲート電極部を有するトランジスタと、他のゲート電極部を有する他のトランジスタとを形成する工程と
を含み、
前記トランジスタの前記ゲート電極部を形成する工程は、
複数の前記素子形成領域のうち、前記半導体基板の(111)面を有する所定の素子形成領域と前記素子分離絶縁膜との境界を覆う態様で、前記所定の素子形成領域を横切るようにゲート電極を形成する工程と、
前記ゲート電極を覆うように、第1絶縁膜を下層膜とし前記第1絶縁膜とは異なる所定の膜を上層膜とするオフセットスペーサ膜となる膜を形成する工程と、
前記オフセットスペーサ膜となる膜に加工を施すことにより、前記ゲート電極の側壁面上に、前記第1絶縁膜を少なくとも含むオフセットスペーサ膜を形成する工程と、
前記ゲート電極の前記側壁面上に、前記オフセットスペーサ膜を介在させてサイドウォール絶縁膜を形成する工程と
を含み、
前記オフセットスペーサ膜となる膜を形成する工程では、窒素(N)および水素(H)の少なくともいずれかを含有する膜が、前記所定の膜として形成され、
前記オフセットスペーサ膜を形成する工程では、前記第1絶縁膜は、前記ゲート電極の前記側壁面を覆う第1部分と、前記第1部分の下端部から前記ゲート電極が位置する側とは反対側へ延在して前記所定の素子形成領域の表面を覆う第2部分とが残されるように、加工され、
前記サイドウォール絶縁膜を形成する工程では、前記サイドウォール絶縁膜は、前記第1絶縁膜の前記第2部分の端面を覆うように形成され、
前記他のゲート電極部を形成する工程は、
複数の前記素子形成領域のうち、他の素子形成領域を横切るように他のゲート電極を形成する工程と、
前記他のゲート電極の他の側壁面上に、前記窒素(N)および前記水素(H)の少なくともいずれかを含有する他のオフセットスペーサ膜を形成する工程と、
前記他のオフセットスペーサ膜および前記他のゲート電極を注入マスクとして不純物を注入することにより、前記他の素子形成領域にエクステンション領域を形成する工程と
を含む、撮像装置の製造方法。 - 前記オフセットスペーサ膜となる膜を形成する工程では、前記所定の膜として、第1シリコン窒化膜が形成される、請求項1記載の撮像装置の製造方法。
- 前記オフセットスペーサ膜を形成する工程では、前記第1シリコン窒化膜は、前記ゲート電極の前記側壁面との間に前記第1部分を介在させるとともに、前記所定の素子形成領域との間に前記第2部分を介在させるように形成される、請求項2記載の撮像装置の製造方法。
- 前記サイドウォール絶縁膜を形成する工程の前に、前記オフセットスペーサ膜における前記第1絶縁膜を残して前記所定の膜を除去する工程を含む、請求項1記載の撮像装置の製造方法。
- 前記トランジスタを形成する工程は、前記所定の素子形成領域としての第1素子形成領域に、前記信号を増幅する増幅トランジスタを形成する工程を含む、請求項1記載の撮像装置の製造方法。
- 前記ゲート電極部を形成する工程は、前記サイドウォール絶縁膜として、第2シリコン窒化膜からなる単層のサイドウォール絶縁膜を形成する工程を含み、
前記トランジスタを形成する工程は、前記半導体基板の表面における、前記サイドウォール絶縁膜によって覆われた部分以外の部分に、金属シリサイド膜を形成する工程を含む、請求項1記載の撮像装置の製造方法。 - 前記所定の膜は、670℃以上の温度条件のもとで形成される、請求項1記載の撮像装置の製造方法。
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JP6664353B2 (ja) * | 2017-07-11 | 2020-03-13 | キヤノン株式会社 | 光電変換装置、光電変換装置を備えた機器、光電変換装置の製造方法 |
CN117276299A (zh) * | 2023-11-21 | 2023-12-22 | 粤芯半导体技术股份有限公司 | 一种cis器件结构及其制作方法 |
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JP2011155248A (ja) * | 2009-12-28 | 2011-08-11 | Sony Corp | 固体撮像装置とその製造方法並びにカメラ |
JP4993007B2 (ja) | 2010-07-26 | 2012-08-08 | 富士通セミコンダクター株式会社 | 固体撮像装置 |
KR101812036B1 (ko) | 2011-01-06 | 2017-12-26 | 삼성전자 주식회사 | 금속 실리사이드층을 포함하는 반도체 소자 및 그 제조 방법 |
JP6184493B2 (ja) * | 2013-06-14 | 2017-08-23 | ルネサスエレクトロニクス株式会社 | 撮像装置の製造方法 |
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WO2014199509A1 (ja) | 2014-12-18 |
CN105378927B (zh) | 2019-05-28 |
US9698187B2 (en) | 2017-07-04 |
JPWO2014199509A1 (ja) | 2017-02-23 |
US20170229504A1 (en) | 2017-08-10 |
KR102120666B1 (ko) | 2020-06-09 |
KR20160021440A (ko) | 2016-02-25 |
US9887220B2 (en) | 2018-02-06 |
CN105378927A (zh) | 2016-03-02 |
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