JP6149877B2 - フレキシブル基板にハーメチックシールを形成した装置、および、その方法 - Google Patents
フレキシブル基板にハーメチックシールを形成した装置、および、その方法 Download PDFInfo
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- JP6149877B2 JP6149877B2 JP2015023841A JP2015023841A JP6149877B2 JP 6149877 B2 JP6149877 B2 JP 6149877B2 JP 2015023841 A JP2015023841 A JP 2015023841A JP 2015023841 A JP2015023841 A JP 2015023841A JP 6149877 B2 JP6149877 B2 JP 6149877B2
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Description
本発明は、幾つかの例により説明されてよい。
Claims (20)
- フレキシブル基板上に第1の気密材料を選択的に堆積する段階と、
前記フレキシブル基板上にインターコネクトを、前記インターコネクトの一部が前記第1の気密材料に重なるように形成する段階と、
前記第1の気密材料の上に誘電体層を形成する段階と、
前記インターコネクトの近くに、前記誘電体層の上にデバイスを設ける段階と、
前記デバイスおよび前記インターコネクト上に第2の気密材料を選択的に堆積する段階であり、それにより、前記インターコネクト、前記第1の気密材料および前記第2の気密材料の組み合わせ内に前記デバイスをハーメチックシールする、段階と、
を備え、
前記フレキシブル基板と前記誘電体層とが同じ材料を有する、方法。 - 前記第1の気密材料を選択的に堆積する段階は、前記フレキシブル基板上にガラスを選択的に堆積する段階を含み、前記第2の気密材料を前記デバイスおよび前記インターコネクト上に選択的に堆積する段階は、前記デバイスおよび前記インターコネクト上にガラスを選択的に堆積する段階を含む、請求項1に記載の方法。
- 前記第1の気密材料を選択的に堆積する段階は、前記フレキシブル基板上にフォトレジストを設ける段階と、前記フォトレジストおよび前記フレキシブル基板上に前記第1の気密材料を堆積する段階と、前記フォトレジストを取り除いて、堆積した前記第1の気密材料の一部を取り除く段階と、を含む、請求項1または2に記載の方法。
- 前記第2の気密材料の上に他の誘電体層を形成する段階をさらに備える、請求項1から3のいずれか1項に記載の方法。
- 前記第2の気密材料を堆積する段階の前に、前記フレキシブル基板、前記デバイス、または前記インターコネクトの露出面から水分を取り除く段階をさらに備える、請求項1から4のいずれか1項に記載の方法。
- 前記第2の気密材料を堆積する段階の間に、複数のイオンを用いて前記フレキシブル基板、前記デバイス、前記第1の気密材料、または前記インターコネクトに衝撃を与える段階をさらに備える、請求項1から5のいずれか1項に記載の方法。
- 前記第1の気密材料を堆積する段階または前記第2の気密材料を堆積する段階は、前記第1の気密材料または前記第2の気密材料を堆積して、前記第1の気密材料または前記第2の気密材料を約10ミクロン厚未満にする段階を含む、請求項1から6のいずれか1項に記載の方法。
- 前記第1の気密材料または前記第2の気密材料は、1ミクロン厚よりも大きい、請求項7に記載の方法。
- 前記第1の気密材料を堆積する段階または前記第2の気密材料を堆積する段階は、前記第1の気密材料または前記第2の気密材料を、約100℃未満の温度で堆積する段階を含む、請求項1から8のいずれか1項に記載の方法。
- 前記フレキシブル基板上に前記第1の気密材料を選択的に堆積する段階は、前記フレキシブル基板の第1および第2の対向面上に前記第1の気密材料を堆積する段階を含み、
前記フレキシブル基板上に前記インターコネクトを形成する段階は、前記フレキシブル基板の第1の側面および第2の側面のそれぞれにインターコネクトを形成する段階を含み、
前記第1の気密材料上にデバイスを設ける段階は、前記フレキシブル基板の前記第1の側面および前記第2の側面のそれぞれに前記第1の気密材料上の各デバイスを設ける段階を含み、
前記第2の気密材料を堆積する段階は、前記フレキシブル基板の前記第1の側面および前記第2の側面のそれぞれの前記各デバイス上に前記第2の気密材料を堆積する段階を含む、請求項1から9のいずれか1項に記載の方法。 - フレキシブル基板上のガラスの島と、
前記ガラスの島に部分的に重なる前記フレキシブル基板上のインターコネクトと、
前記ガラスの島上に形成された誘電体層と、
前記誘電体層の上に設けられ、前記インターコネクトに電気的に結合されるデバイスと、
前記デバイスの上および少なくとも部分的に前記インターコネクトの上のガラスの層であり、前記ガラスの層、前記ガラスの島、および前記インターコネクトは、前記デバイスのハーメチックシールを形成する、前記ガラスの層と、
を備え、
前記フレキシブル基板と前記誘電体層とが同じ材料を有する、装置。 - 前記ガラスの層の上の他の誘電体層をさらに備える、請求項11に記載の装置。
- 前記ガラスの島は、約10ミクロン厚未満である、請求項11または12に記載の装置。
- 前記ガラスの島は、1ミクロン厚よりも大きい、請求項13に記載の装置。
- 前記ガラスの島は、前記基板の第1の面上の第1のガラスの島であり、前記インターコネクトは、前記基板の前記第1の面上の第1の金属コンタクトであり、前記デバイスは、前記基板の前記第1の面上の第1のデバイスであり、前記ガラスの層は、第1のガラスの層であり、前記装置は、さらに、
前記基板の第2の面上の第2のガラスの島であり、前記第2の面は前記第1の面の反対である、前記第2のガラスの島と、
前記第2のガラスの島に部分的に重なる前記第2の面上の第2のインターコネクトと、
前記第2のガラスの島上に設けられ、第2のインターコネクトに電気的に結合される第2のデバイスと、
前記第2のデバイスの上および少なくとも部分的に前記第2のインターコネクトの上の第2のガラスの層であり、前記第2のガラスの層、前記第2のガラスの島、および前記第2のインターコネクトは、前記第2のデバイスをハーメチックシールする、前記第2のガラスの層と、
を備える、請求項11から14のいずれか1項に記載の装置。 - 前記フレキシブル基板は、ポリジメチルシロキサン(PDMS)を含む、請求項11から15のいずれか1項に記載の装置。
- 前記フレキシブル基板は、第1の基板層および第2の基板層を含む複数の積み重ねられた基板層を有し、
前記装置は、
前記複数の積み重ねられたフレキシブル基板層内に設けられる第1のダイセクションおよび第2のダイセクションと、
前記第1の基板層に近い前記第2の基板層の表面上にパターン化された第1の相互接続回路であり、前記第1のダイセクションおよび第2のダイセクションは、前記第1の相互接続回路を通じて電気的に結合される、前記第1の相互接続回路と、
をさらに備える、請求項11から16のいずれか1項に記載の装置。 - 前記複数の積み重ねられたフレキシブル基板層は、さらに、第3の基板層を含み、前記第2の基板層は、前記第1の基板層上にあり、前記装置は、さらに、
前記第2の基板層の近くの前記第3の基板層の表面上にパターン化された第2の相互接続回路と、
前記第2の基板層を通るビアであり、前記ビアは、前記第1の相互接続回路を前記第2の相互接続回路に電気的に結合する、前記ビアと、
を備える、請求項17に記載の装置。 - 前記複数の積み重ねられたフレキシブル基板層は、さらに、前記第1の基板層上に設けられた第4の基板層を含み、前記第1のダイセクションは、前記第2のダイセクションの第2のアクティブ側面として反対方向を向く第1のアクティブ側面を含み、前記装置は、さらに、
前記第4の基板層に近い前記第1の基板層の表面上にパターン化された第3の相互接続回路を備える、請求項17または18に記載の装置。 - 前記第1のダイセクションは、前記第1の相互接続回路のインターコネクト、前記第1のダイセクションの下に設けられた気密材料、および前記第1のダイセクションの上および少なくとも部分的に前記インターコネクトの上に形成された気密材料の組み合わせを含むハーメチックシール構造を有する、請求項17から19のいずれか1項に記載の装置。
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US14/227,779 US9930793B2 (en) | 2014-03-27 | 2014-03-27 | Electric circuit on flexible substrate |
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