JP6139525B2 - 縁部保護バリアアセンブリ - Google Patents
縁部保護バリアアセンブリ Download PDFInfo
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- JP6139525B2 JP6139525B2 JP2014523999A JP2014523999A JP6139525B2 JP 6139525 B2 JP6139525 B2 JP 6139525B2 JP 2014523999 A JP2014523999 A JP 2014523999A JP 2014523999 A JP2014523999 A JP 2014523999A JP 6139525 B2 JP6139525 B2 JP 6139525B2
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- Prior art keywords
- assembly
- electrical device
- sheet
- barrier
- barrier laminate
- Prior art date
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
- H01L31/0481—Encapsulation of modules characterised by the composition of the encapsulation material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
- H01L31/049—Protective back sheets
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B10/00—Integration of renewable energy sources in buildings
- Y02B10/10—Photovoltaic [PV]
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
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- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Inorganic Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Laminated Bodies (AREA)
- Photovoltaic Devices (AREA)
- Electroluminescent Light Sources (AREA)
Description
本開示によるアセンブリは、例えば、光電池などの太陽光装置などの電気装置を含む。したがって、本開示は、光電池を含むアセンブリを提示する。好適な光電池としては、多様な材料で開発され、太陽エネルギーを電気に変換する、それぞれ固有の吸収スペクトルを有するものが挙げられる。光電池の製造に使用される材料及びこれらの太陽光吸収帯端波長の例としては、結晶性シリコン単接合(約400nm〜約1150nm)、非晶質シリコン単接合(約300nm〜約720nm)、リボンシリコン(約350nm〜約1150nm)、CIS(銅インジウムセレン化物)(約400nm〜約1300nm)、CIGS(銅インジウムガリウム二セレン化物)(約350nm〜約1100nm)、CdTe(約400nm〜約895nm)、GaAsマルチ接合(約350nm〜約1750nm)が挙げられる。これらの半導体材料の短い波長の左吸収帯端は、通常、300nm〜400nmの間である。特定の実施形態において、電気装置はCIGS電池である。いくつかの実施形態では、アセンブリが適用される太陽光装置(例えば、光電池)は、可撓性フィルム基材を備え、可撓性光起電装置を生じる。
保護層の例としては、耐候性テープが挙げられる。耐候性テープの例としては、3M Company(St.Paul,MN)から、商品名SCOTCH BRAND No.838 TEDLAR PLASTIC FILM TAPEで市販されるものなどの、ポリビニルフッ化物テープが挙げられる。
多層フィルムは一般的に、バリア積層物、及び耐候性シート、及びいくつかの実施形態においては基材を含む。多層フィルムは一般的に、可視光線及び赤外線に対して透過性である。本明細書で使用するとき、用語「可視光及び赤外線に対して透過性」は、垂直軸に沿って測定した際にスペクトルの可視光及び赤外線部分の範囲の平均透過率が少なくとも75%(一部の実施形態では少なくとも約80、85、90、92、95、97又は98%)であることを意味することができる。一部の実施形態では、可視光及び赤外線透過性アセンブリは、400nm〜1400nmの範囲の平均透過率が少なくとも約75%(一部の実施形態では少なくとも約80、85、90、92、95、97又は98%)である。可視光及び赤外線透過性アセンブリは、例えば、光電池による、可視光及び赤外線の吸収に関して干渉しないものである。一部の実施形態では、可視光及び赤外線透過性アセンブリは、光電池に有用である光の波長の範囲の平均透過率が少なくとも約75%(一部の実施形態では少なくとも約80、85、90、92、95、97又は98%)である。
本開示によるアセンブリは基材を含む。一般的に基材はポリマーフィルムである。本出願の関連において、用語「ポリマー」は、有機ホモポリマー及びコポリマー、並びに例えば、共押出し又はエステル交換を含む反応により混和性ブレンド中で形成される場合があるポリマー又はコポリマーを含むように理解される。用語「ポリマー」及び「コポリマー」は、ランダム及びブロックコポリマーの両方を含む。
多層フィルムは、バリア積層物を含む。バリア積層物は、様々な構成から選択され得る。用語「バリアフィルム」は、酸素又は水の少なくとも1つに対してバリアをもたらすフィルムを指す。バリア積層物は、用途により要求される特定のレベルで酸素及び水透過率を有するように選択される。一部の実施形態では、バリア積層物は、38℃及び相対湿度100%で約0.005g/m2/日未満、一部の実施形態では38℃及び相対湿度100%で約0.0005g/m2/日未満、一部の実施形態では38℃及び相対湿度100%で0.00005g/m2/日未満の水蒸気透過率(WVTR)を有する。一部の実施形態では、可撓性バリア積層物は、50℃及び相対湿度100%で約0.05、0.005、0.0005又は0.00005g/m2/日未満、又は更に85℃及び相対湿度100%でも約0.005、0.0005、0.00005g/m2/日未満のWVTRを有する。一部の実施形態では、バリア積層物は、23℃及び90%相対湿度で約0.005g/m2/日未満、一部の実施形態では23℃及び相対湿度90%で約0.0005g/m2/日未満、一部の実施形態では23℃及び相対湿度90%で0.00005g/m2/日未満の酸素透過率を有する。
本開示によるアセンブリは、単層又は多層であり得る、耐候性シートを含む。耐候性シートは、概して、可撓性であり、並びに、可視光及び赤外線に対して透過性であり、並びに、有機膜形成ポリマーを含む。耐候性シートを形成できる有用な材料としては、ポリエステル、ポリカーボネート、ポリエーテル、ポリイミド、ポリオレフィン、フルオロポリマー及びこれらの組み合わせが挙げられる。
感圧接着剤(「PSA」)は、耐候性シートとバリア積層物との間にあってよい。PSAは、(1)侵襲性及び永続性のある粘着力、(2)指圧以下の圧力による接着力、(3)被着体を保持する充分な能力、及び(4)被着体からきれいに取り外すのに充分な結合力を含む特性を有することが、当業者には周知である。PSAとして良好に機能することが分かっている材料は、必要な粘弾性特性を示し、粘着、剥離接着、及び剪断保持力の所望のバランスをもたらすように設計並びに処方されたポリマーである。
場合により、本開示によるアセンブリは、乾燥剤を含有することができる。一部の実施形態では、本開示によるアセンブリは、乾燥剤を本質的に含まない。「乾燥剤を本質的に含まない」は、乾燥剤が存在し得るものの、光起電モジュールを効果的に乾燥させるには不十分な量であり得ることを意味する。乾燥剤を本質的に含まないアセンブリとしては、乾燥剤がアセンブリに全く組み込まれていないものが挙げられる。
想定される電気装置、縁部封止、多層フィルム、耐候性シート、及び縁部封止材料と接触する保護層を備える、本発明のアセンブリの例は、以下の方法で構成される。低い水蒸気透過率(WVTR)バックシートを想定するため、3M Company,St.Paull,MNから入手可能な「UBF 9L」バリアフィルム積層体のシート(17cm(6.5in)幅×24cm(9.5in)長)が、耐候性表面を下にして配置された。Adco,Lincolnshire,ILから、商標名「HELIOSEAL PVS 101」で市販されている、縁部封止材料1.0mm厚さの12mm(1/2インチ)幅ストリップが、「UBF 9L」の耐候性表面と反対側の「UBF 9L」の周辺部全体に配置された。Jura−Plast,Reichenschwand,Germanyから商品名「JURASOL TL」(0.4mm厚さ)で市販されるカプセル化材料は、14cm(5.5in)×22cm(8.5in)シートに切り取られ、耐候性表面と反対の「UBF 9L」バリアフィルム積層体の上部の縁部封止材料の内側に配置される。McMaster−Carr Princeton,NJから市販される、ポリテトラフルオロエチレン(PTFE)コーティングされた140μm(5.6mil(0.14mm))アルミニウムホイルは、13cm(5.0in)×20cm(8.0in)シートに切り取られ、PTFEコーティングされた面を上にして、「JURASOL TL」カプセル化材の上に配置された。この材料は、可撓性電気装置を想定するためにアセンブリ内に配置された。いくつかの同じカプセル化材料の別のシートは、14cm(5.5in)×22(8.5in)シートに切り取られ、PTFEコーティングされたアルミニウムホイルの上に配置された。「UBF 9L」バリアフィルム積層体の別のシートが15cm(6.0in)×23cm(9.0in)に切り取られ、耐候性表面を上にして配置され、縁部封止剤の周辺部全体の周囲において「JURASOL TL」カプセル化材料+6.4mm(0.25in)を被覆するように配置された。「UBF 9L」バリアフィルム積層体トップシートを配置した後、3M Company,St.Paul,MNから商品名「SCOTCH BRAND No.838 TEDLAR PLASTIC FILM TAPE」で市販される、12mm(0.47in)のポリビニルフッ化物(PVF)テープが、縁部封止周辺部の上に直接接着され、これにより、残りの露出縁部封止、及び「UBF 9L」バリアフィルム積層体縁部の6.4mm(0.25in)を被覆する。
「HELIOSEAL PVS 101」は3.6N/mm(20lbs/in)であった。
「SOLARGAIN LP02」は1.3N/mm(8.3lbs/in)であった。
縁部封止材料及び耐候性シートと接触する保護層を含むバリアアセンブリの例が、積層機においてアセンブリが硬化された後、PVFテープの代わりに、CRC Industries,Inc.Warminster,PAから入手可能な、黒色RTVシリコーンコークが適用されたことを除いて、実施例1に記載の通り調製された。コークは、最初に耐候性シート及び縁部封止を被覆するビードとして適用され、その後残りの縁部封止、及び約6mm(0.25in)の耐候性トップシートを完全に被覆するために、木製舌圧子を使用して更に拡張させた。コークをその後、メーカーの取扱説明書に従って、室温で硬化させた。
[1]
アセンブリであって、
電気装置と、
多層フィルムであって、前記多層フィルムは、
前記電気装置に隣接するバリア積層物、及び
前記電気装置の反対側の、前記バリア積層物に隣接する耐候性シートを含む、多層フィルムと、
前記電気装置及び前記耐候性シートと接触する保護層とを含む、アセンブリ。
[2]
前記バリア積層物は、ポリマー層、及び無機バリア層を含む、項目1に記載のアセンブリ。
[3]
前記無機バリア層が、酸化物層である、項目2に記載のアセンブリ。
[4]
前記多層フィルムは、透明及び可撓性である、項目1に記載のアセンブリ。
[5]
前記多層フィルムは、前記電気装置と前記バリア積層物との間に基材を含む、項目1に記載のアセンブリ。
[6]
前記電気装置は、カプセル化材料層を含む、項目1に記載のアセンブリ。
[7]
前記電気装置は、縁部封止材料を含む、項目1に記載のアセンブリ。
[8]
前記電気装置は、バックシートを含む、項目1に記載のアセンブリ。
[9]
前記電気装置は、屋根部を含む、項目1に記載のアセンブリ。
[10]
前記保護層は、前記カプセル化材料と接触している、項目6に記載のアセンブリ。
[11]
前記保護層は、前記縁部封止と接触している、項目7に記載のアセンブリ。
[12]
前記保護層は、前記バックシートと接触している、項目8に記載のアセンブリ。
[13]
前記保護層は、前記屋根部と接触している、項目9に記載のアセンブリ。
[14]
前記保護層は、前記基材と接触している、項目5に記載のアセンブリ。
[15]
前記保護層は、前記バリア積層物と接触している、項目1に記載のアセンブリ。
[16]
前記保護層は、耐候性テープである、項目1に記載のアセンブリ。
[17]
前記保護層は、機械的接合部である、項目1に記載のアセンブリ。
[18]
前記保護層は、硬化性樹脂である、項目1に記載のアセンブリ。
[19]
前記保護層は、不透明である、項目1に記載のアセンブリ。
[20]
前記保護層は、前記電気装置に結合される、項目1に記載のアセンブリ。
[21]
前記保護層が、前記耐候性シートに結合される、項目1に記載のアセンブリ。
[22]
前記縁部封止材料が、ブチルゴムを含む、項目7に記載のアセンブリ。
[23]
前記基材が、ポリエチレンテレフタレート、ポリエチレンナフタレート、ポリエーテルエーテルケトン、ポリアリールエーテルケトン、ポリアクリレート、ポリエーテルイミド、ポリアリールスルホン、ポリエーテルスルホン、ポリアミドイミド、又はポリイミドのうちの少なくとも1つを含む、項目5に記載のアセンブリ。
[24]
前記耐候性シートが、フルオロポリマーを含む、項目1に記載のアセンブリ。
[25]
前記フルオロポリマーが、エチレンテトラフルオロエチレンコポリマー、テトラフルオロエチレンヘキサフルオロプロピレンコポリマー、テトラフルオロエチレンヘキサフルオロプロピレンフッ化ビニリデンコポリマー、又はポリフッ化ビニリデンの少なくとも1つを含む、項目24に記載のアセンブリ。
[26]
前記耐候性シートと前記バリア積層物との間に、感圧接着剤層を含む、項目1に記載のアセンブリ。
[27]
前記感圧接着剤は、アクリレート、シリコーン、ポリイソブチレン、尿素、又はこれらの混合物である、項目26に記載のアセンブリ。
[28]
前記感圧接着剤は、UV安定剤、ヒンダードアミン光安定剤、抗酸化剤、又は熱安定剤の少なくとも1つを含む、項目26に記載のアセンブリ。
[29]
前記バリア積層物の酸化物層は、前記バリア積層物のポリマー層とシロキサン結合を共有する、項目1に記載のアセンブリ。
[30]
前記電気装置は、光電池である、項目1に記載のアセンブリ。
[31]
前記光電池が、CIGS電池である、項目30に記載のアセンブリ。
[32]
前記基材は、熱安定性である、項目5に記載のアセンブリ。
[33]
前記バリア積層物は、50℃及び100%相対湿度において、0.005cc/m2/日未満の水蒸気透過率を有する、項目1に記載のアセンブリ。
[34]
前記バリア積層物は、23℃及び90%相対湿度において、0.005cc/m2/日未満の酸素透過率を有する、項目1に記載のアセンブリ。
[35]
前記バリア積層物は、少なくとも2つの酸化物層を含む、項目1に記載のアセンブリ。
[36]
前記バリア積層物は、少なくとも2つのポリマー層を含む、項目1に記載のアセンブリ。
Claims (4)
- アセンブリであって、
電気装置と、
多層フィルムであって、前記多層フィルムは、
前記電気装置に隣接する基材、
前記基材と接触しているバリア積層物、
前記バリア積層物と接触している感圧接着剤、及び
前記感圧接着剤と接触しているポリマー耐候性シートを含む、多層フィルムと、
前記電気装置及び前記耐候性シートと接触する保護層とを含み、
前記バリア積層物は、ポリマー層及び無機バリア層を含む、アセンブリ。 - 前記保護層は、耐候性テープ、機械的接合部、及び硬化性樹脂より選ばれる、請求項1に記載のアセンブリ。
- 前記耐候性シートが、フルオロポリマーを含む、請求項1に記載のアセンブリ。
- 前記バリア積層物は、50℃及び100%相対湿度において、0.005cc/m2/日未満の水蒸気透過率を有し、前記バリア積層物は、23℃及び90%相対湿度において、0.005cc/m2/日未満の酸素透過率を有する、請求項1に記載のアセンブリ。
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JP2014529186A (ja) | 2014-10-30 |
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KR20140051987A (ko) | 2014-05-02 |
CN103988578B (zh) | 2017-07-21 |
WO2013019695A2 (en) | 2013-02-07 |
WO2013019695A3 (en) | 2014-05-08 |
US9614113B2 (en) | 2017-04-04 |
KR101911581B1 (ko) | 2018-10-24 |
TW201316535A (zh) | 2013-04-16 |
US20140224327A1 (en) | 2014-08-14 |
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US20170155006A1 (en) | 2017-06-01 |
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