JP6118053B2 - 固体撮像装置の製造方法 - Google Patents

固体撮像装置の製造方法 Download PDF

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Publication number
JP6118053B2
JP6118053B2 JP2012196639A JP2012196639A JP6118053B2 JP 6118053 B2 JP6118053 B2 JP 6118053B2 JP 2012196639 A JP2012196639 A JP 2012196639A JP 2012196639 A JP2012196639 A JP 2012196639A JP 6118053 B2 JP6118053 B2 JP 6118053B2
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Japan
Prior art keywords
insulating film
forming
region
opening
semiconductor substrate
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JP2012196639A
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English (en)
Japanese (ja)
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JP2014053434A5 (enrdf_load_stackoverflow
JP2014053434A (ja
Inventor
武志 青木
武志 青木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
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Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2012196639A priority Critical patent/JP6118053B2/ja
Priority to US14/014,716 priority patent/US9029182B2/en
Publication of JP2014053434A publication Critical patent/JP2014053434A/ja
Publication of JP2014053434A5 publication Critical patent/JP2014053434A5/ja
Application granted granted Critical
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
    • H01L21/76229—Concurrent filling of a plurality of trenches having a different trench shape or dimension, e.g. rectangular and V-shaped trenches, wide and narrow trenches, shallow and deep trenches
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0151—Manufacturing their isolation regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP2012196639A 2012-09-06 2012-09-06 固体撮像装置の製造方法 Active JP6118053B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2012196639A JP6118053B2 (ja) 2012-09-06 2012-09-06 固体撮像装置の製造方法
US14/014,716 US9029182B2 (en) 2012-09-06 2013-08-30 Method of manufacturing solid-state image sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012196639A JP6118053B2 (ja) 2012-09-06 2012-09-06 固体撮像装置の製造方法

Publications (3)

Publication Number Publication Date
JP2014053434A JP2014053434A (ja) 2014-03-20
JP2014053434A5 JP2014053434A5 (enrdf_load_stackoverflow) 2015-08-13
JP6118053B2 true JP6118053B2 (ja) 2017-04-19

Family

ID=50188116

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012196639A Active JP6118053B2 (ja) 2012-09-06 2012-09-06 固体撮像装置の製造方法

Country Status (2)

Country Link
US (1) US9029182B2 (enrdf_load_stackoverflow)
JP (1) JP6118053B2 (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9006080B2 (en) * 2013-03-12 2015-04-14 Taiwan Semiconductor Manufacturing Company, Ltd. Varied STI liners for isolation structures in image sensing devices
JP6164951B2 (ja) * 2013-06-28 2017-07-19 キヤノン株式会社 光電変換装置の製造方法、光電変換装置、及び撮像システム
JP2015122374A (ja) * 2013-12-20 2015-07-02 キヤノン株式会社 固体撮像装置及びその製造方法

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003218195A (ja) * 2002-01-22 2003-07-31 Canon Inc 半導体装置の製造方法
JP2004039832A (ja) * 2002-07-03 2004-02-05 Sony Corp 光電変換装置及びその製造方法
JP2004221485A (ja) 2003-01-17 2004-08-05 Seiko Epson Corp 半導体装置
JP4539176B2 (ja) * 2004-05-31 2010-09-08 ソニー株式会社 固体撮像素子及びその製造方法
JP4496866B2 (ja) * 2004-07-08 2010-07-07 ソニー株式会社 固体撮像素子及びその製造方法
JP4578321B2 (ja) 2005-05-25 2010-11-10 Ｎｔｎ株式会社 軸継手
US7468307B2 (en) * 2005-06-29 2008-12-23 Infineon Technologies Ag Semiconductor structure and method
KR101316058B1 (ko) * 2007-08-09 2013-10-10 삼성전자주식회사 반도체 소자의 제조 방법
JP2009064980A (ja) 2007-09-06 2009-03-26 Canon Inc 撮像装置の製造方法、撮像装置、及び撮像システム
JP2009088447A (ja) * 2007-10-03 2009-04-23 Sony Corp 固体撮像素子およびその製造方法
JP2009272596A (ja) 2008-04-09 2009-11-19 Sony Corp 固体撮像装置とその製造方法、及び電子機器
EP2109143B1 (en) 2008-04-09 2013-05-29 Sony Corporation Solid-state imaging device, production method thereof, and electronic device
KR101038789B1 (ko) * 2008-09-22 2011-06-03 주식회사 동부하이텍 이미지센서 및 그 제조방법
KR101540083B1 (ko) 2008-10-22 2015-07-30 삼성전자주식회사 반도체 소자의 패턴 형성 방법
JP2010206174A (ja) * 2009-02-06 2010-09-16 Canon Inc 光電変換装置およびその製造方法ならびにカメラ
JP5326937B2 (ja) * 2009-08-26 2013-10-30 ソニー株式会社 Ｃｍｏｓ固体撮像素子の駆動方法
JP5240146B2 (ja) 2009-09-24 2013-07-17 ソニー株式会社 固体撮像素子
JP2011176207A (ja) * 2010-02-25 2011-09-08 Toshiba Corp 不揮発性半導体記憶装置およびその製造方法
JP2010219543A (ja) 2010-04-27 2010-09-30 Toshiba Corp 半導体装置

Also Published As

Publication number Publication date
JP2014053434A (ja) 2014-03-20
US20140065753A1 (en) 2014-03-06
US9029182B2 (en) 2015-05-12

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