JP6114385B2 - 基板を位置合わせする装置及び方法 - Google Patents
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Description
・出発材料
・正確なジオメトリ:製品をできるだけ精密に所望の厚さとなるように研削し、研磨することができるように、例えば1μmよりも小さい僅かなTTV(Total Thickness Variation)が必要である。
・テンポラリーボンディングの後からの分離を可能とする前処理。
・キャリア基板上で裏面薄化されるウェハのプラズマ処理を行う場合、偏心性がプラズマの不均一な放電を引き起こす。生じた放電(電界密度が高いことにより生じる絶縁破壊−アーク放電)は、製品及びプラズマ処理室を損傷する恐れがある。製品基板よりも小さい若しくは製品基板と同じ大きさのキャリア基板を使用する可能性により、プラズマプロセス及びスパッタプロセスで特別な利点が得られる。
・いわゆるスキャナ及びステッパでリソグラフィ露光する際に、調整が不十分なボンディング対は十分正確に負荷されない。ボンディング対の基準合わせ(予備位置合わせ)は外輪郭に基づき行われる。しかしながら(著しく)大きなキャリア基板の外輪郭は、キャリア基板と製品基板の両外輪郭の調整が正確でないならば、若しくは製品基板の外輪郭が使用できないならば、製品基板上のベンチマークの位置に対応しない。従ってベンチマークは顕微鏡の「捕捉範囲」にはなく、手間をかけて探さなければならない。これは、このシステムの時間的損失、処理量的損失、生産性損失に通じる。
2,2´ 基板
2o 接触側
2a,2a´ 段部
2k,2k´ 載置縁
3 接触手段
4 キャリア基板受容体
5,5´ キャリア基板
2u,5u 周縁
5o 支持面
6 回転手段
7 キャリアユニット
8 調節装置
9 ベースプレート
10 ガイドエレメント
11 距離測定エレメント
12 測定手段
13,13´,13´´,13´´´ 光学機器
14 接着層
15,15´ スキャンユニット
16 機能ユニット
d1,d2,d3,dk 平均直径
dR 平均リング幅
D1 厚さ
Claims (13)
- 基板(2,2´)をさらに処理するために、面状の前記基板(2,2´)をキャリア基板(5,5´)に対して位置合わせして、接触させる装置であって、以下の特徴、即ち、
前記基板(2,2´)を位置固定する基板受容体(1)と、
前記キャリア基板(5,5´)を位置固定するキャリア基板受容体(4)と、
前記基板(2,2´)と前記キャリア基板(5,5´)との接触平面に関して、前記基板受容体(1)上に位置固定された前記基板(2,2´)の周輪郭(2u)の少なくとも所定の区分を検出し、前記キャリア基板受容体(4)上に位置固定された前記キャリア基板(5,5´)の周輪郭(5u)の少なくとも所定の区分を検出する検出手段(11,13)と、
前記基板(2,2´)を前記キャリア基板(5,5´)に対して位置合わせするための位置合わせ手段(6,8)であって、該位置合わせ手段(6,8)は、前記検出手段(11,13)によって検出された前記周輪郭(2u,5u)に基づき制御手段によって制御される、位置合わせ手段(6,8)と、
前記キャリア基板(5,5´)に対して位置合わせされた前記基板(2,2´)を前記キャリア基板(5,5´)に接触させる接触手段(3)と、を備え、
前記検出手段(11,13)は距離測定装置(11)を備えており、該距離測定装置(11)は、該距離測定装置(11)から前記周輪郭(2u,5u)までの距離を検出することを特徴とする、基板を位置合わせする装置。 - 前記検出手段(11,13)は、前記基板(2,2´)及び/又は前記キャリア基板(5,5´)に対して回転手段(6)によって回転可能であって、かつ/又は前記基板(2,2´)及び/又は前記キャリア基板(5,5´)に対して調節装置(8)によって、前記接触平面に対して平行なX方向かつ/又はY方向で調節可能である、請求項1記載の装置。
- 前記検出手段(11,13)は、少なくとも部分的に前記基板(2,2´)及び/又は前記キャリア基板(5,5´)の周囲側に配置可能なキャリアユニット(7)に取り付けられている、請求項1又は2記載の装置。
- 前記キャリアユニット(7)は前記キャリア基板受容体(1)と前記基板受容体(4)の周囲に配置されていて、前記キャリア基板受容体(1)の下部に取り付けられた、Z方向調節ユニットの形の接触手段(3)を有していて、かつ/又は前記接触手段(3)の下部を支持するベースプレート(9)を有している、請求項3記載の装置。
- 前記調節装置(8)は、前記ベースプレート(9)と前記キャリアユニット(7)との間に取り付けられている、請求項2を引用する請求項4記載の装置。
- 前記基板(2,2´)の前記周輪郭(2u)と前記キャリア基板(5,5´)の前記周輪郭(5u)とは同時に、1つ又は複数の電磁的に作動する同じ検出手段(11,13)によって検出可能である、請求項1から5までのいずれか1項記載の装置。
- 基板(2,2´)をさらに処理するために、面状の基板(2,2´)をキャリア基板(5,5´)に対して位置合わせして、接触させる方法であって、以下のステップ、即ち、
検出手段(11,13)によって、前記基板(2,2´)と前記キャリア基板(5,5´)との接触平面に関して、基板受容体(1)上に位置固定された前記基板(2,2´)の周輪郭(2u)の少なくとも所定の区分を検出し、キャリア基板受容体(4)上に位置固定された前記キャリア基板(5,5´)の周輪郭(5u)の少なくとも所定の区分を検出し、この場合、前記検出手段(11,13)の距離測定装置(11)によって、該距離測定装置(11)から前記周輪郭(2u,5u)までの距離を検出するステップと、
位置合わせ手段(6,8)によって、前記基板(2,2´)を前記キャリア基板(5,5´)に対して位置合わせするステップであって、前記位置合わせ手段(6,8)は、前記検出手段(11,13)によって検出された前記周輪郭(2u,5u)に基づき制御手段によって制御されるステップと、
前記キャリア基板(5,5´)に対して位置合わせされた前記基板(2,2´)を、接触手段(3)によって前記キャリア基板(5,5´)に接触させるステップと、を有することを特徴とする方法。 - 前記周輪郭(2u,5u)を検出する前記検出手段(11,13)を、前記基板(2,2´)及び/又は前記キャリア基板(5,5´)に対して回転手段(6)によって回転させ、かつ/又は前記基板(2,2´)及び/又は前記キャリア基板(5,5´)に対して調節装置(8)によって、前記接触平面に対して平行なX方向かつ/又はY方向で調節する、請求項7記載の方法。
- 前記基板(2,2´)の前記周輪郭(2u)と前記キャリア基板(5,5´)の前記周輪郭(5u)とを同時に、1つ又は複数の電磁的に作動する同じ検出手段(11,13)によって検出する、請求項7又は8記載の方法。
- 前記周輪郭(2u,5u)の、均等に分布している位置で、前記基板(2,2´)及び/又は前記キャリア基板(5,5´)に対する前記検出手段の回転により前記検出を行う、かつ/又は複数の検出機器を前記周輪郭(2u,5u)に沿って配置することにより前記検出を行う、請求項7から9までのいずれか1項記載の方法。
- 前記位置合わせを、X方向かつ/又はY方向かつ/又は回転方向で行い、前記周輪郭(2u,5u)を互いに同心的に又は等距離に位置合わせする、請求項7から10までのいずれか1項記載の方法。
- 前記位置合わせを制御手段によって行い、前記間隔差に関する規定可能な境界値を下回る際に、又は間隔偏差の総和に関する規定可能な境界値を下回る際に、又は前記間隔差の平均値に対する偏差の総和に関する規定可能な境界値を下回る際に、位置合わせを終了する、請求項7から11までのいずれか1項記載の方法。
- 前記位置合わせを、接触するまで継続的に行う、請求項7から12までのいずれか1項記載の方法。
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JP6463227B2 (ja) * | 2015-07-07 | 2019-01-30 | 東京エレクトロン株式会社 | 基板搬送方法 |
US10361099B2 (en) * | 2017-06-23 | 2019-07-23 | Applied Materials, Inc. | Systems and methods of gap calibration via direct component contact in electronic device manufacturing systems |
KR102459089B1 (ko) * | 2017-12-21 | 2022-10-27 | 삼성전자주식회사 | 반도체 패키징 장비 및 이를 이용한 반도체 소자의 제조방법 |
JP7204537B2 (ja) * | 2019-03-05 | 2023-01-16 | キオクシア株式会社 | 基板貼合装置および半導体装置の製造方法 |
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JP2001284436A (ja) | 2000-03-29 | 2001-10-12 | Hitachi Kokusai Electric Inc | 基板加熱装置 |
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JP4066889B2 (ja) * | 2003-06-09 | 2008-03-26 | 株式会社Sumco | 貼り合わせ基板およびその製造方法 |
DE102004007060B3 (de) | 2004-02-13 | 2005-07-07 | Thallner, Erich, Dipl.-Ing. | Vorrichtung und Verfahren zum Verbinden von Wafern |
JP4530891B2 (ja) | 2005-03-25 | 2010-08-25 | 日東電工株式会社 | 支持板付き半導体ウエハの位置決め方法およびこれを用いた半導体ウエハの製造方法並びに支持板付き半導体ウエハの位置決め装置 |
JP3896382B2 (ja) * | 2005-06-10 | 2007-03-22 | 株式会社ファースト | XYθステージによる位置アライメントシステム |
JP4613709B2 (ja) | 2005-06-24 | 2011-01-19 | セイコーエプソン株式会社 | 半導体装置の製造方法 |
US7371663B2 (en) | 2005-07-06 | 2008-05-13 | Taiwan Semiconductor Manufacturing Co., Ltd. | Three dimensional IC device and alignment methods of IC device substrates |
JP5139736B2 (ja) * | 2007-06-27 | 2013-02-06 | 東レエンジニアリング株式会社 | 液晶部品の製造方法および製造装置 |
JP5190666B2 (ja) * | 2007-07-25 | 2013-04-24 | 信越半導体株式会社 | 貼り合わせウェーハの回転角度の測定方法 |
JP5532850B2 (ja) * | 2009-11-24 | 2014-06-25 | 株式会社Sumco | 半導体ウェーハの形状測定方法およびそれに用いる形状測定装置 |
JP5628549B2 (ja) * | 2010-04-27 | 2014-11-19 | 芝浦メカトロニクス株式会社 | 基板貼合装置 |
JP2012049326A (ja) | 2010-08-26 | 2012-03-08 | Nsk Technology Co Ltd | マスクの位置決め装置及びマスクの回転中心算出方法 |
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2012
- 2012-06-12 EP EP12727150.0A patent/EP2852972B1/de active Active
- 2012-06-12 KR KR1020197002189A patent/KR20190010738A/ko not_active Application Discontinuation
- 2012-06-12 WO PCT/EP2012/061109 patent/WO2013185803A1/de active Application Filing
- 2012-06-12 US US14/406,790 patent/US10014202B2/en active Active
- 2012-06-12 JP JP2015516478A patent/JP6114385B2/ja active Active
- 2012-06-12 KR KR1020147034809A patent/KR101944148B1/ko active IP Right Grant
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- 2012-06-12 CN CN201280073964.8A patent/CN104813463B/zh active Active
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EP2852972B1 (de) | 2016-02-24 |
WO2013185803A1 (de) | 2013-12-19 |
US20150170950A1 (en) | 2015-06-18 |
KR101944148B1 (ko) | 2019-01-30 |
US10014202B2 (en) | 2018-07-03 |
US20180269096A1 (en) | 2018-09-20 |
JP2015527728A (ja) | 2015-09-17 |
KR20150023376A (ko) | 2015-03-05 |
KR20190010738A (ko) | 2019-01-30 |
CN104813463A (zh) | 2015-07-29 |
EP2852972A1 (de) | 2015-04-01 |
SG2014012942A (en) | 2014-08-28 |
CN104813463B (zh) | 2017-11-03 |
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