JP5705326B2 - 回転軸の位置を決定する方法 - Google Patents
回転軸の位置を決定する方法 Download PDFInfo
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- JP5705326B2 JP5705326B2 JP2013535282A JP2013535282A JP5705326B2 JP 5705326 B2 JP5705326 B2 JP 5705326B2 JP 2013535282 A JP2013535282 A JP 2013535282A JP 2013535282 A JP2013535282 A JP 2013535282A JP 5705326 B2 JP5705326 B2 JP 5705326B2
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- substrate
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- 239000000758 substrate Substances 0.000 claims description 115
- 238000000034 method Methods 0.000 claims description 36
- 238000002372 labelling Methods 0.000 claims description 26
- 230000003287 optical effect Effects 0.000 claims description 26
- 238000001514 detection method Methods 0.000 claims description 11
- 235000012431 wafers Nutrition 0.000 description 31
- 239000004065 semiconductor Substances 0.000 description 18
- 238000013519 translation Methods 0.000 description 11
- 238000012545 processing Methods 0.000 description 9
- 238000004458 analytical method Methods 0.000 description 4
- 238000004364 calculation method Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 238000006073 displacement reaction Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/002—Measuring arrangements characterised by the use of optical techniques for measuring two or more coordinates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
- H01L21/681—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment using optical controlling means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
Description
− X−Y座標系に沿って移動することができ、X−Y座標系に垂直な回転軸の周りで回転することができる基板保持手段に、基板を適用する
− 基板保持手段に基板を適用する前または後に、上記のステップで回転軸の位置を決定する
− それぞれ互いに向けられた接点の配向誤差を決定する。
− 図4aでは、基準ラベリング10の代わりに、ウエハ3、すなわちウエハ3の上面2に配置された接点4が、図4aに示す位置、すなわち回転軸12の外側およびX方向(図4b参照)およびY方向(図5b参照)の光軸11の外側から基準ラベリングとして移動され、基準ラベリングとして使用される接点4が正確にレンズ8の光軸11にくる。
− 接点4の位置が、X−Y基準位置RPとして、すなわちXおよびY方向によって特定されるX−Y座標系のX−Y位置として記憶される。
− 基板保持手段14、したがって基板保持手段14に固定された基準ラベリングとして使用される接点4を備えたウエハ3の180度回転(図4c参照)。回転は回転軸12の周りで実施され、図4dおよび図5dに示す接点4が、第2のX−Y基準位置RP′では回転軸12について第1のX−Y基準位置RPの鏡像となる。回転軸12の鏡像とは、回転軸12とX−Y座標系または基板面との交点に対して鏡像であることを意味する。
− 基板保持手段14は、図4eおよび5eに示すように、基準ラベリング(接点4)が再び光軸11にくるまで、並進ユニットまたはXおよびY方向の並進駆動によって移動される。並進ユニットによる基板保持手段14の移動は、正確に計測され/検出され、第1のX−Y基準位置RPおよび第2のX−Y基準位置RP′から、回転軸12の正確なX−Y位置、すなわちそれぞれのXおよびY方向の半分の距離が、例えばベクトル解析によって確定されるように、データ処理システムに送られる。このように確定されたX−Y位置は、基板面またはX−Y座標系との交点において回転軸12のX−Y位置に対応する。
2 上面
3 ウエハ
4 接点
5 接点
6 半導体部品
7 下面
8 レンズ
9 表面
10 基準ラベリング
11 光軸
12 回転軸
13 X−Y開始位置
14 基板保持手段
15 レンズ
R 回転角度
Claims (5)
- 基板(3)を保持するための基板保持手段(14)であり、回転軸(12)の周りで回転することができる前記基板保持手段(14)のX−Y座標系に垂直な前記回転軸(12)の前記X−Y座標系におけるX−Y位置を決定し、かつ、前記基板(3)の接点(4,5)の配向誤差を決定するための方法であって、
前記基板保持手段(14)上に設けられた基準ラベリング(10)の第1のX−Y基準位置(RP)を決定するステップと、
前記回転軸(12)の周りで所定の回転角度(R)で前記基板保持手段(14)を回転させるステップと、
回転によって変化した前記基準ラベリング(10)の第2のX−Y基準位置(RP′)を決定するステップと、
前記基板面における前記回転軸(12)の前記位置を計算するステップと、
前記基板(3)の接点(4,5)の前記配向誤差を決定するステップと、
を含む方法において、
前記回転軸(12)の前記位置の決定中、及び、前記接点(4,5)の前記配向誤差の決定中に、前記基板(3)を前記基板保持手段(14)に固定する、
ことを特徴とする方法。 - 前記回転軸(12)の周りでの前記基板(3)又は前記基板保持手段(14)の回転が前記基板保持手段(14)の回転手段によって実施される、請求項1に記載の方法。
- 前記第1の基準位置(RP)及び前記第2の基準位置(RP′)の決定は、少なくとも1つのレンズ(8、15)を含む光学的位置検出手段によって、前記回転軸(12)に平行な光軸(11)で実施される、請求項1又は2に記載の方法。
- 前記接点(4,5)の前記配向誤差の決定は、それぞれのレンズが前記基板(3)のそれぞれの面のためにある光学的位置検出手段によって実施される、請求項1乃至3のいずれか一項に記載の方法。
- 前記光学的位置検出手段に対して前記基板保持手段(14)を、前記X−Y座標系において移動することができ又は前記X−Y座標系に平行に移動することができ、当該相対移動を前記X−Y座標系のX方向及びY方向において検出することができる、請求項3又は4に記載の方法。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/EP2010/006517 WO2012065615A1 (de) | 2010-10-26 | 2010-10-26 | Verfahren zur bestimmung der position einer rotationsachse |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013542605A JP2013542605A (ja) | 2013-11-21 |
JP5705326B2 true JP5705326B2 (ja) | 2015-04-22 |
Family
ID=44023046
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013535282A Active JP5705326B2 (ja) | 2010-10-26 | 2010-10-26 | 回転軸の位置を決定する方法 |
Country Status (8)
Country | Link |
---|---|
US (1) | US9464884B2 (ja) |
EP (1) | EP2633547B1 (ja) |
JP (1) | JP5705326B2 (ja) |
KR (1) | KR101656130B1 (ja) |
CN (1) | CN103329243B (ja) |
SG (1) | SG188576A1 (ja) |
TW (1) | TWI546884B (ja) |
WO (1) | WO2012065615A1 (ja) |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4104372B2 (ja) * | 2002-04-23 | 2008-06-18 | 東京エレクトロン株式会社 | アライナーの精度測定装置、その方法およびそのプログラムを記憶した記憶媒体 |
JP4376116B2 (ja) | 2003-06-03 | 2009-12-02 | 東京エレクトロン株式会社 | 基板受け渡し位置の調整方法 |
KR101015778B1 (ko) | 2003-06-03 | 2011-02-22 | 도쿄엘렉트론가부시키가이샤 | 기판 처리장치 및 기판 수수 위치의 조정 방법 |
JP2005011966A (ja) * | 2003-06-18 | 2005-01-13 | Dainippon Screen Mfg Co Ltd | 基板搬送装置、基板処理装置および搬送基準位置教示方法、ならびにこれらに用いるセンサ治具 |
US8064730B2 (en) * | 2003-09-22 | 2011-11-22 | Asml Netherlands B.V. | Device manufacturing method, orientation determination method and lithographic apparatus |
DE102004007060B3 (de) * | 2004-02-13 | 2005-07-07 | Thallner, Erich, Dipl.-Ing. | Vorrichtung und Verfahren zum Verbinden von Wafern |
DE102004032933B3 (de) * | 2004-07-07 | 2006-01-05 | Süss Microtec Lithography Gmbh | Mittelpunktbestimmung von drehsymmetrischen Justiermarken |
US7420676B2 (en) * | 2004-07-28 | 2008-09-02 | Asml Netherlands B.V. | Alignment method, method of measuring front to backside alignment error, method of detecting non-orthogonality, method of calibration, and lithographic apparatus |
US7371663B2 (en) * | 2005-07-06 | 2008-05-13 | Taiwan Semiconductor Manufacturing Co., Ltd. | Three dimensional IC device and alignment methods of IC device substrates |
EP1886771B1 (en) * | 2006-05-31 | 2011-04-06 | Panasonic Corporation | Rotation center point calculating method, rotation axis calculating method, program creating method, operation method, and robot apparatus |
JP5146663B2 (ja) | 2008-05-19 | 2013-02-20 | 大日本印刷株式会社 | 基板表裏面パターン位置測定方法及びその方法を用いた測定装置 |
-
2010
- 2010-10-26 WO PCT/EP2010/006517 patent/WO2012065615A1/de active Application Filing
- 2010-10-26 SG SG2013019690A patent/SG188576A1/en unknown
- 2010-10-26 KR KR1020137010536A patent/KR101656130B1/ko active IP Right Grant
- 2010-10-26 JP JP2013535282A patent/JP5705326B2/ja active Active
- 2010-10-26 CN CN201080069854.5A patent/CN103329243B/zh active Active
- 2010-10-26 EP EP10771031.1A patent/EP2633547B1/de active Active
- 2010-10-26 US US13/878,245 patent/US9464884B2/en active Active
-
2011
- 2011-10-26 TW TW100138946A patent/TWI546884B/zh active
Also Published As
Publication number | Publication date |
---|---|
US20130211779A1 (en) | 2013-08-15 |
CN103329243B (zh) | 2016-06-29 |
EP2633547B1 (de) | 2014-12-10 |
KR101656130B1 (ko) | 2016-09-08 |
US9464884B2 (en) | 2016-10-11 |
KR20130124495A (ko) | 2013-11-14 |
TWI546884B (zh) | 2016-08-21 |
EP2633547A1 (de) | 2013-09-04 |
CN103329243A (zh) | 2013-09-25 |
TW201230241A (en) | 2012-07-16 |
SG188576A1 (en) | 2013-04-30 |
WO2012065615A1 (de) | 2012-05-24 |
JP2013542605A (ja) | 2013-11-21 |
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