JP6107937B2 - 半導体装置の駆動方法 - Google Patents
半導体装置の駆動方法 Download PDFInfo
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- JP6107937B2 JP6107937B2 JP2015509978A JP2015509978A JP6107937B2 JP 6107937 B2 JP6107937 B2 JP 6107937B2 JP 2015509978 A JP2015509978 A JP 2015509978A JP 2015509978 A JP2015509978 A JP 2015509978A JP 6107937 B2 JP6107937 B2 JP 6107937B2
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- 239000004065 semiconductor Substances 0.000 title claims description 34
- 238000000034 method Methods 0.000 title claims description 14
- 238000001514 detection method Methods 0.000 claims description 69
- 238000010586 diagram Methods 0.000 claims description 14
- 239000000758 substrate Substances 0.000 claims description 10
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 7
- 230000035945 sensitivity Effects 0.000 description 13
- 239000013078 crystal Substances 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 230000005611 electricity Effects 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 230000036962 time dependent Effects 0.000 description 1
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Classifications
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
- G05F1/462—Regulating voltage or current wherein the variable actually regulated by the final control device is dc as a function of the requirements of the load, e.g. delay, temperature, specific voltage/current characteristic
- G05F1/463—Sources providing an output which depends on temperature
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
- G01K7/01—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using semiconducting elements having PN junctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
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- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- Radar, Positioning & Navigation (AREA)
- Automation & Control Theory (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Semiconductor Integrated Circuits (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Description
複数の前記半導体装置の各温度検出用ダイオードへの通電電流値を変えたときの出力電圧のデータから、当該通電電流値をpn接合面積で割った値である電流密度に対する前記出力電圧の平均値と、前記出力電圧のばらつき許容電圧に対応する標準偏差との関係を示す第1の図式を作成する段階と、
前記出力電圧が通電開始時における電圧値から所定割合変動した時点を寿命として該寿命と前記電流密度との対応関係を示す第2の図式を作成する段階と、
前記第1の図式を用いて前記温度検出用ダイオードの出力電圧のばらつき許容電圧に対応する電流密度を抽出する一方、前記第2の図式を用いて前記半導体装置に要求される寿命に対応する電流密度を抽出する段階と、
前記第1の図式を用いて抽出した電流密度を下限値とし、前記第2の図式を用いて抽出した電流密度を上限値として、当該下限値と当該上限値の範囲において前記温度検出用ダイオードに通電する段階と、
を含むことを特徴としている。
50A/cm2 ≦ Jf ≦ 1213A/cm2
の範囲で決定すれば、前記温度検出用ダイオード3に要求される寿命と温度検出感度とを同時に満足させることが可能となる。故に上記電流密度Jfの設定条件の下で、前記温度検出用ダイオード3の大きさ、具体的にはpn接合面積に応じて該温度検出用ダイオード3に通電する電流値を決定すれば、これによって所要とする温度検出感度を満たしながら、その寿命を十分に確保することが可能となる。
2 絶縁膜
3 温度検出用ダイオード
3p p型領域
3n n型領域
4p,4n 電極
5 アノード端子
6 カソード端子
Claims (4)
- 半導体能動素子を形成した基板上に絶縁膜を介して形成されたpn接合を有する温度検出用ダイオードを備えた半導体装置を駆動する方法であって、
複数の前記半導体装置の各温度検出用ダイオードへの通電電流値を変えたときの出力電圧のデータから、当該通電電流値をpn接合面積で割った値である電流密度に対する前記出力電圧の平均値と、前記出力電圧のばらつき許容電圧に対応する標準偏差との関係を示す第1の図式を作成する段階と、
前記出力電圧が通電開始時における電圧値から所定割合変動した時点を寿命として該寿命と前記電流密度との対応関係を示す第2の図式を作成する段階と、
前記第1の図式を用いて前記温度検出用ダイオードの出力電圧のばらつき許容電圧に対応する電流密度を抽出する一方、前記第2の図式を用いて前記半導体装置に要求される寿命に対応する電流密度を抽出する段階と、
前記第1の図式を用いて抽出した電流密度を下限値とし、前記第2の図式を用いて抽出した電流密度を上限値として、当該下限値と当該上限値の範囲において前記温度検出用ダイオードに通電する段階と、
を含むことを特徴とする半導体の駆動方法。 - 前記温度検出用ダイオードは、多結晶シリコンからなるpn接合ダイオードである請求項1に記載の半導体装置の駆動方法。
- 前記電流密度の上限値は、前記温度検出用ダイオードに要求される寿命が15年であるときには1213A/cm2である請求項1又は2に記載の半導体装置の駆動方法。
- 前記電流密度の下限値は、前記温度検出用ダイオードの出力電圧の標準偏差に対するばらつき許容電圧が2.5mVであるときには50A/cm2である請求項1乃至3のいずれかに記載の半導体装置の駆動方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013079449 | 2013-04-05 | ||
JP2013079449 | 2013-04-05 | ||
PCT/JP2014/056809 WO2014162844A1 (ja) | 2013-04-05 | 2014-03-13 | 半導体装置の駆動方法 |
Publications (2)
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---|---|
JPWO2014162844A1 JPWO2014162844A1 (ja) | 2017-02-16 |
JP6107937B2 true JP6107937B2 (ja) | 2017-04-05 |
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JP2015509978A Active JP6107937B2 (ja) | 2013-04-05 | 2014-03-13 | 半導体装置の駆動方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US9915961B2 (ja) |
JP (1) | JP6107937B2 (ja) |
CN (1) | CN105122451B (ja) |
DE (1) | DE112014001811T5 (ja) |
WO (1) | WO2014162844A1 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6194812B2 (ja) * | 2014-02-18 | 2017-09-13 | トヨタ自動車株式会社 | 半導体モジュール |
JP7324603B2 (ja) | 2019-03-29 | 2023-08-10 | ローム株式会社 | 半導体装置 |
CN112327127A (zh) * | 2020-10-29 | 2021-02-05 | 西安西电电力系统有限公司 | 集成铂温度传感器的全控型电力电子器件及结温测量方法 |
US11860046B1 (en) * | 2021-02-25 | 2024-01-02 | Acacia Communications, Inc. | Temperature sensor |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH0693485B2 (ja) * | 1985-11-29 | 1994-11-16 | 日本電装株式会社 | 半導体装置 |
JP3538505B2 (ja) * | 1996-05-22 | 2004-06-14 | 富士電機デバイステクノロジー株式会社 | 温度検知部内蔵型バイポーラ半導体素子およびその製造方法 |
JP2001332694A (ja) * | 2000-05-23 | 2001-11-30 | Mitsubishi Electric Corp | 温度センサ搭載のマイクロコンピュータ |
US6603301B2 (en) * | 2001-07-26 | 2003-08-05 | Agilent Technologies, Inc. | Multiple range current measurement system with low power dissipation, fast setting time, and low common mode voltage error |
JP4437913B2 (ja) * | 2003-11-25 | 2010-03-24 | 富士ゼロックス株式会社 | 表面発光型半導体レーザ素子およびその製造方法 |
US7737433B2 (en) * | 2004-03-08 | 2010-06-15 | The Ohio State University Research Foundation | Electronic junction devices featuring redox electrodes |
US7255476B2 (en) * | 2004-04-14 | 2007-08-14 | International Business Machines Corporation | On chip temperature measuring and monitoring circuit and method |
EP1751511B1 (en) * | 2004-06-04 | 2016-03-09 | Infineon Technologies AG | Pn-junction temperature sensing apparatus |
JP2010199490A (ja) * | 2009-02-27 | 2010-09-09 | Fuji Electric Systems Co Ltd | パワー半導体装置の温度測定装置およびこれを使用したパワー半導体モジュール |
EP2724170B1 (en) * | 2011-06-21 | 2015-09-16 | KK Wind Solutions A/S | Method for estimating the end of lifetime for a power semiconductor device |
US9506817B2 (en) * | 2012-05-12 | 2016-11-29 | Integrated Device Technology, Inc | Temperature detection method and device with improved accuracy and conversion time |
-
2014
- 2014-03-13 WO PCT/JP2014/056809 patent/WO2014162844A1/ja active Application Filing
- 2014-03-13 JP JP2015509978A patent/JP6107937B2/ja active Active
- 2014-03-13 DE DE112014001811.2T patent/DE112014001811T5/de active Granted
- 2014-03-13 CN CN201480012428.6A patent/CN105122451B/zh active Active
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2015
- 2015-09-04 US US14/845,885 patent/US9915961B2/en active Active
Also Published As
Publication number | Publication date |
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US20150378376A1 (en) | 2015-12-31 |
WO2014162844A1 (ja) | 2014-10-09 |
DE112014001811T5 (de) | 2015-12-17 |
CN105122451B (zh) | 2017-12-12 |
CN105122451A (zh) | 2015-12-02 |
US9915961B2 (en) | 2018-03-13 |
JPWO2014162844A1 (ja) | 2017-02-16 |
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