JP6107085B2 - 酸化物半導体薄膜および薄膜トランジスタ - Google Patents

酸化物半導体薄膜および薄膜トランジスタ Download PDF

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Publication number
JP6107085B2
JP6107085B2 JP2012256866A JP2012256866A JP6107085B2 JP 6107085 B2 JP6107085 B2 JP 6107085B2 JP 2012256866 A JP2012256866 A JP 2012256866A JP 2012256866 A JP2012256866 A JP 2012256866A JP 6107085 B2 JP6107085 B2 JP 6107085B2
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Prior art keywords
thin film
oxide semiconductor
semiconductor thin
oxide
film
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JP2012256866A
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Japanese (ja)
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JP2014107303A5 (https=
JP2014107303A (ja
Inventor
中山　徳行
徳行 中山
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Sumitomo Metal Mining Co Ltd
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Sumitomo Metal Mining Co Ltd
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Priority to JP2012256866A priority Critical patent/JP6107085B2/ja
Application filed by Sumitomo Metal Mining Co Ltd filed Critical Sumitomo Metal Mining Co Ltd
Priority to US14/646,869 priority patent/US9368639B2/en
Priority to PCT/JP2013/081445 priority patent/WO2014080996A1/ja
Priority to CN201380060993.5A priority patent/CN104798205B/zh
Priority to KR1020157012834A priority patent/KR20150088793A/ko
Priority to TW102142591A priority patent/TWI594433B/zh
Publication of JP2014107303A publication Critical patent/JP2014107303A/ja
Publication of JP2014107303A5 publication Critical patent/JP2014107303A5/ja
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5806—Thermal treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H10D30/6756—Amorphous oxide semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/22—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using physical deposition, e.g. vacuum deposition or sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2922—Materials being non-crystalline insulating materials, e.g. glass or polymers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2923—Materials being conductive materials, e.g. metallic silicides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3238—Materials thereof being insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3434—Deposited materials, e.g. layers characterised by the chemical composition being oxide semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3451—Structure
    • H10P14/3452—Microstructure
    • H10P14/3454—Amorphous

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  • Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Thermal Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Thin Film Transistor (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Crystallography & Structural Chemistry (AREA)
JP2012256866A 2012-11-22 2012-11-22 酸化物半導体薄膜および薄膜トランジスタ Expired - Fee Related JP6107085B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2012256866A JP6107085B2 (ja) 2012-11-22 2012-11-22 酸化物半導体薄膜および薄膜トランジスタ
PCT/JP2013/081445 WO2014080996A1 (ja) 2012-11-22 2013-11-21 酸化物半導体薄膜とその製造方法および薄膜トランジスタ
CN201380060993.5A CN104798205B (zh) 2012-11-22 2013-11-21 氧化物半导体薄膜及其制造方法以及薄膜晶体管
KR1020157012834A KR20150088793A (ko) 2012-11-22 2013-11-21 산화물 반도체 박막과 그의 제조 방법 및 박막 트랜지스터
US14/646,869 US9368639B2 (en) 2012-11-22 2013-11-21 Oxide semiconductor thin film, production method thereof, and thin film transistor
TW102142591A TWI594433B (zh) 2012-11-22 2013-11-22 氧化物半導體薄膜與其製造方法以及薄膜電晶體

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Application Number Priority Date Filing Date Title
JP2012256866A JP6107085B2 (ja) 2012-11-22 2012-11-22 酸化物半導体薄膜および薄膜トランジスタ

Publications (3)

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JP2014107303A JP2014107303A (ja) 2014-06-09
JP2014107303A5 JP2014107303A5 (https=) 2015-12-03
JP6107085B2 true JP6107085B2 (ja) 2017-04-05

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JP2012256866A Expired - Fee Related JP6107085B2 (ja) 2012-11-22 2012-11-22 酸化物半導体薄膜および薄膜トランジスタ

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US (1) US9368639B2 (https=)
JP (1) JP6107085B2 (https=)
KR (1) KR20150088793A (https=)
CN (1) CN104798205B (https=)
TW (1) TWI594433B (https=)
WO (1) WO2014080996A1 (https=)

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CN104319262B (zh) 2014-11-13 2017-02-01 京东方科技集团股份有限公司 一种多晶氧化物薄膜晶体管阵列基板及其制备方法
CN106435491B (zh) * 2015-08-06 2019-02-12 清华大学 溅射靶及氧化物半导体膜以及其制备方法
JP7187775B2 (ja) * 2018-01-17 2022-12-13 住友金属鉱山株式会社 非晶質試料の結晶化温度測定方法および結晶化温度測定システム
JP2019124598A (ja) * 2018-01-17 2019-07-25 住友金属鉱山株式会社 非晶質試料の結晶化温度測定方法および結晶化温度測定システム
CN109378274B (zh) * 2018-10-11 2022-04-22 吉林建筑大学 一种制备不同类型铟镓锌氧薄膜晶体管的方法
KR20200072408A (ko) * 2018-12-11 2020-06-22 한양대학교 산학협력단 인듐산화물층, 인듐 산화물층을 채널층으로 포함하는 박막트랜지스터, 및 박막트랜지스터의 제조방법
JP7326795B2 (ja) * 2019-03-20 2023-08-16 株式会社リコー 電界効果型トランジスタ、表示素子、画像表示装置、及びシステム
WO2025187689A1 (ja) * 2024-03-04 2025-09-12 出光興産株式会社 酸化物半導体膜、トランジスタ、及び酸化物半導体膜の製造方法

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KR20070116888A (ko) 2004-03-12 2007-12-11 도꾸리쯔교세이호징 가가꾸 기쥬쯔 신꼬 기꼬 아몰퍼스 산화물 및 박막 트랜지스터
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JP4662075B2 (ja) 2007-02-02 2011-03-30 株式会社ブリヂストン 薄膜トランジスタ及びその製造方法
JP5306179B2 (ja) * 2007-03-20 2013-10-02 出光興産株式会社 スパッタリングターゲット、酸化物半導体膜及び半導体デバイス
JP5466939B2 (ja) 2007-03-23 2014-04-09 出光興産株式会社 半導体デバイス、多結晶半導体薄膜、多結晶半導体薄膜の製造方法、電界効果型トランジスタ、及び、電界効果型トランジスタの製造方法
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KR101741278B1 (ko) * 2009-08-05 2017-05-29 스미토모 긴조쿠 고잔 가부시키가이샤 산화물 소결물체와 그 제조 방법, 타겟 및 투명 도전막
JPWO2011040028A1 (ja) * 2009-09-30 2013-02-21 出光興産株式会社 Ｉｎ−Ｇａ−Ｚｎ−Ｏ系酸化物焼結体
JP5437825B2 (ja) 2010-01-15 2014-03-12 出光興産株式会社 Ｉｎ−Ｇａ−Ｏ系酸化物焼結体、ターゲット、酸化物半導体薄膜及びこれらの製造方法
WO2011152048A1 (ja) * 2010-06-02 2011-12-08 出光興産株式会社 スパッタリングターゲット

Also Published As

Publication number Publication date
CN104798205B (zh) 2018-01-05
CN104798205A (zh) 2015-07-22
US9368639B2 (en) 2016-06-14
TWI594433B (zh) 2017-08-01
WO2014080996A1 (ja) 2014-05-30
KR20150088793A (ko) 2015-08-03
US20150287830A1 (en) 2015-10-08
JP2014107303A (ja) 2014-06-09
TW201431077A (zh) 2014-08-01

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