JP6100854B2 - 半導体装置の製造方法、基板処理装置、ガス供給システムおよびプログラム - Google Patents

半導体装置の製造方法、基板処理装置、ガス供給システムおよびプログラム Download PDF

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Publication number
JP6100854B2
JP6100854B2 JP2015185891A JP2015185891A JP6100854B2 JP 6100854 B2 JP6100854 B2 JP 6100854B2 JP 2015185891 A JP2015185891 A JP 2015185891A JP 2015185891 A JP2015185891 A JP 2015185891A JP 6100854 B2 JP6100854 B2 JP 6100854B2
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Prior art keywords
film
silicon
gas
processing
substrate
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Japanese (ja)
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JP2016105457A5 (enrdf_load_stackoverflow
JP2016105457A (ja
Inventor
森谷　敦
敦 森谷
中磯　直春
直春 中磯
由悟 渡橋
由悟 渡橋
孝太郎 村上
孝太郎 村上
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Kokusai Denki Electric Inc
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Hitachi Kokusai Electric Inc
Kokusai Denki Electric Inc
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Application filed by Hitachi Kokusai Electric Inc, Kokusai Denki Electric Inc filed Critical Hitachi Kokusai Electric Inc
Priority to CN201510707965.9A priority Critical patent/CN105609406B/zh
Priority to US14/929,973 priority patent/US9412587B2/en
Priority to KR1020150153316A priority patent/KR101822238B1/ko
Priority to TW104136160A priority patent/TWI672800B/zh
Publication of JP2016105457A publication Critical patent/JP2016105457A/ja
Priority to US15/190,578 priority patent/US9540728B2/en
Publication of JP2016105457A5 publication Critical patent/JP2016105457A5/ja
Priority to US15/368,337 priority patent/US9691609B2/en
Application granted granted Critical
Publication of JP6100854B2 publication Critical patent/JP6100854B2/ja
Priority to US15/468,966 priority patent/US9941119B2/en
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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Recrystallisation Techniques (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2015185891A 2014-11-19 2015-09-18 半導体装置の製造方法、基板処理装置、ガス供給システムおよびプログラム Active JP6100854B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
CN201510707965.9A CN105609406B (zh) 2014-11-19 2015-10-27 半导体器件的制造方法、衬底处理装置、气体供给系统
US14/929,973 US9412587B2 (en) 2014-11-19 2015-11-02 Method of manufacturing semiconductor device, substrate processing apparatus, gas supply system, and recording medium
KR1020150153316A KR101822238B1 (ko) 2014-11-19 2015-11-02 반도체 장치의 제조 방법, 기판 처리 장치, 가스 공급 시스템, 프로그램, 삼차원 플래시 메모리, 다이내믹 랜덤 액세스 메모리 및 반도체 장치
TW104136160A TWI672800B (zh) 2014-11-19 2015-11-03 半導體裝置的製造方法，基板處理裝置，氣體供給系統及記錄媒體
US15/190,578 US9540728B2 (en) 2014-11-19 2016-06-23 Substrate processing apparatus, apparatus for manufacturing semiconductor device, and gas supply system
US15/368,337 US9691609B2 (en) 2014-11-19 2016-12-02 Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
US15/468,966 US9941119B2 (en) 2014-11-19 2017-03-24 Method of forming silicon layer in manufacturing semiconductor device and recording medium

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014234401 2014-11-19
JP2014234401 2014-11-19

Publications (3)

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JP2016105457A JP2016105457A (ja) 2016-06-09
JP2016105457A5 JP2016105457A5 (enrdf_load_stackoverflow) 2016-09-29
JP6100854B2 true JP6100854B2 (ja) 2017-03-22

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JP (1) JP6100854B2 (enrdf_load_stackoverflow)
KR (1) KR101822238B1 (enrdf_load_stackoverflow)
TW (1) TWI672800B (enrdf_load_stackoverflow)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6585551B2 (ja) * 2016-06-15 2019-10-02 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置、およびプログラム
KR101960763B1 (ko) * 2016-11-03 2019-03-21 주식회사 유진테크 저온 에피택셜층 형성방법
JP2018113322A (ja) 2017-01-11 2018-07-19 株式会社日立国際電気 半導体装置の製造方法、プログラムおよび基板処理装置
JP6778139B2 (ja) * 2017-03-22 2020-10-28 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置およびプログラム
WO2018179352A1 (ja) * 2017-03-31 2018-10-04 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法および記録媒体
JP6777624B2 (ja) 2017-12-28 2020-10-28 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置、およびプログラム
JP7058575B2 (ja) * 2018-09-12 2022-04-22 株式会社Kokusai Electric 半導体装置の製造方法、基板処理方法、基板処理装置、およびプログラム
JP7199286B2 (ja) * 2019-03-29 2023-01-05 東京エレクトロン株式会社 基板処理装置
JP7065818B2 (ja) * 2019-10-28 2022-05-12 株式会社Kokusai Electric 半導体装置の製造方法、基板処理方法、基板処理装置、およびプログラム
KR102328573B1 (ko) * 2020-01-17 2021-11-17 성균관대학교산학협력단 C-free 할로겐 기반의 가스를 이용한 실리콘 산화막 대비 높은 식각 선택비를 갖는 실리콘 질화막 건식 식각 방법
JP7305700B2 (ja) 2021-04-19 2023-07-10 株式会社Kokusai Electric 基板処理方法、半導体装置の製造方法、基板処理装置、およびプログラム

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US4522662A (en) * 1983-08-12 1985-06-11 Hewlett-Packard Company CVD lateral epitaxial growth of silicon over insulators
JPS61179571A (ja) * 1984-09-27 1986-08-12 テキサス　インスツルメンツ　インコ−ポレイテツド メモリセルおよびそのアレイ
JPS62183508A (ja) * 1986-02-07 1987-08-11 Nippon Telegr & Teleph Corp <Ntt> 半導体基板およびその製造法
JPH0451565A (ja) * 1990-06-19 1992-02-20 Toshiba Corp 半導体記憶装置およびその製造方法
JP3403231B2 (ja) * 1993-05-12 2003-05-06 三菱電機株式会社 半導体装置およびその製造方法
JPH08204032A (ja) * 1995-01-20 1996-08-09 Mitsubishi Electric Corp 半導体装置及びその製造方法
JP3382114B2 (ja) * 1997-02-27 2003-03-04 株式会社東芝 半導体装置及びその製造方法
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JP3485081B2 (ja) * 1999-10-28 2004-01-13 株式会社デンソー 半導体基板の製造方法
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JP2007317874A (ja) * 2006-05-25 2007-12-06 Toshiba Corp 不揮発性半導体記憶装置
JP4791949B2 (ja) * 2006-12-22 2011-10-12 株式会社東芝 不揮発性半導体メモリ
JP5023004B2 (ja) * 2008-06-30 2012-09-12 株式会社日立国際電気 基板処理方法及び基板処理装置
JP2010114360A (ja) * 2008-11-10 2010-05-20 Toshiba Corp 半導体装置及びその製造方法
JP5692763B2 (ja) * 2010-05-20 2015-04-01 東京エレクトロン株式会社 シリコン膜の形成方法およびその形成装置
JP5393895B2 (ja) * 2010-09-01 2014-01-22 株式会社日立国際電気 半導体装置の製造方法及び基板処理装置
JP5815443B2 (ja) * 2012-03-19 2015-11-17 株式会社日立国際電気 半導体装置の製造方法、基板処理方法および基板処理装置
JP5902073B2 (ja) * 2012-09-25 2016-04-13 株式会社日立国際電気 半導体装置の製造方法、基板処理方法及び基板処理装置
US20140120678A1 (en) * 2012-10-29 2014-05-01 Matheson Tri-Gas Methods for Selective and Conformal Epitaxy of Highly Doped Si-containing Materials for Three Dimensional Structures
JP6068130B2 (ja) * 2012-12-25 2017-01-25 株式会社日立国際電気 半導体装置の製造方法、基板処理装置およびプログラム

Also Published As

Publication number Publication date
TWI672800B (zh) 2019-09-21
KR101822238B1 (ko) 2018-01-25
TW201637135A (zh) 2016-10-16
KR20160059952A (ko) 2016-05-27
JP2016105457A (ja) 2016-06-09

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