JP6100071B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

Info

Publication number
JP6100071B2
JP6100071B2 JP2013089149A JP2013089149A JP6100071B2 JP 6100071 B2 JP6100071 B2 JP 6100071B2 JP 2013089149 A JP2013089149 A JP 2013089149A JP 2013089149 A JP2013089149 A JP 2013089149A JP 6100071 B2 JP6100071 B2 JP 6100071B2
Authority
JP
Japan
Prior art keywords
film
oxide
oxide film
electrode layer
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2013089149A
Other languages
English (en)
Japanese (ja)
Other versions
JP2013251533A (ja
JP2013251533A5 (enExample
Inventor
哲弘 田中
哲弘 田中
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2013089149A priority Critical patent/JP6100071B2/ja
Publication of JP2013251533A publication Critical patent/JP2013251533A/ja
Publication of JP2013251533A5 publication Critical patent/JP2013251533A5/ja
Application granted granted Critical
Publication of JP6100071B2 publication Critical patent/JP6100071B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6728—Vertical TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

Landscapes

  • Thin Film Transistor (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Weting (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2013089149A 2012-04-30 2013-04-22 半導体装置の作製方法 Expired - Fee Related JP6100071B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2013089149A JP6100071B2 (ja) 2012-04-30 2013-04-22 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2012104279 2012-04-30
JP2012104279 2012-04-30
JP2013089149A JP6100071B2 (ja) 2012-04-30 2013-04-22 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2013251533A JP2013251533A (ja) 2013-12-12
JP2013251533A5 JP2013251533A5 (enExample) 2016-05-19
JP6100071B2 true JP6100071B2 (ja) 2017-03-22

Family

ID=49476514

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013089149A Expired - Fee Related JP6100071B2 (ja) 2012-04-30 2013-04-22 半導体装置の作製方法

Country Status (2)

Country Link
US (1) US8772771B2 (enExample)
JP (1) JP6100071B2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11074944B2 (en) 2018-10-31 2021-07-27 Toshiba Memory Corporation Semiconductor memory device

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9368619B2 (en) 2013-02-08 2016-06-14 Taiwan Semiconductor Manufacturing Company, Ltd. Method for inducing strain in vertical semiconductor columns
US9466668B2 (en) 2013-02-08 2016-10-11 Taiwan Semiconductor Manufacturing Company, Ltd. Inducing localized strain in vertical nanowire transistors
US9209247B2 (en) 2013-05-10 2015-12-08 Taiwan Semiconductor Manufacturing Company, Ltd. Self-aligned wrapped-around structure
US9978863B2 (en) * 2013-08-16 2018-05-22 Taiwan Semiconductor Manufacturing Company Limited Semiconductor arrangement with one or more semiconductor columns
US9859439B2 (en) 2013-09-18 2018-01-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR20160087024A (ko) 2015-01-12 2016-07-21 삼성디스플레이 주식회사 박막트랜지스터 및 그의 제조방법
US9564493B2 (en) 2015-03-13 2017-02-07 Taiwan Semiconductor Manufacturing Company, Ltd. Devices having a semiconductor material that is semimetal in bulk and methods of forming the same
US10141232B2 (en) 2016-06-30 2018-11-27 International Business Machines Corporation Vertical CMOS devices with common gate stacks
US10014305B2 (en) 2016-11-01 2018-07-03 Micron Technology, Inc. Methods of forming an array comprising pairs of vertically opposed capacitors and arrays comprising pairs of vertically opposed capacitors
US10062745B2 (en) 2017-01-09 2018-08-28 Micron Technology, Inc. Methods of forming an array of capacitors, methods of forming an array of memory cells individually comprising a capacitor and a transistor, arrays of capacitors, and arrays of memory cells individually comprising a capacitor and a transistor
US9935114B1 (en) 2017-01-10 2018-04-03 Micron Technology, Inc. Methods of forming an array comprising pairs of vertically opposed capacitors and arrays comprising pairs of vertically opposed capacitors
US9842839B1 (en) * 2017-01-12 2017-12-12 Micron Technology, Inc. Memory cell, an array of memory cells individually comprising a capacitor and a transistor with the array comprising rows of access lines and columns of digit lines, a 2T-1C memory cell, and methods of forming an array of capacitors and access transistors there-above
US10497712B2 (en) 2017-03-16 2019-12-03 Toshiba Memory Corporation Semiconductor memory
US10553601B2 (en) 2017-03-16 2020-02-04 Toshiba Memory Corporation Semiconductor memory including semiconductor oxide
US10043808B1 (en) * 2017-03-16 2018-08-07 Toshiba Memory Corporation Semiconductor memory
US10312239B2 (en) 2017-03-16 2019-06-04 Toshiba Memory Corporation Semiconductor memory including semiconductor oxie
US11380797B2 (en) 2017-06-20 2022-07-05 Intel Corporation Thin film core-shell fin and nanowire transistors
JP7109928B2 (ja) 2018-01-31 2022-08-01 キオクシア株式会社 トランジスタ及び半導体記憶装置並びにトランジスタの製造方法
US10388658B1 (en) 2018-04-27 2019-08-20 Micron Technology, Inc. Transistors, arrays of transistors, arrays of memory cells individually comprising a capacitor and an elevationally-extending transistor, and methods of forming an array of transistors
US12527000B2 (en) 2018-10-09 2026-01-13 Micron Technology, Inc. Methods of forming a device, and related devices, memory devices, and electronic systems
JP7177260B2 (ja) * 2018-10-09 2022-11-22 マイクロン テクノロジー，インク． 水素障壁材料を有する垂直トランジスタを含むデバイス及び関連する方法
EP3864704A4 (en) * 2018-10-09 2022-10-12 Micron Technology, Inc. VERTICAL TRANSISTOR DEVICES AND ELECTRONIC SYSTEMS AND RELATED METHODS
JP2021150525A (ja) 2020-03-19 2021-09-27 キオクシア株式会社 半導体記憶装置及び半導体記憶装置の製造方法
CN111599870A (zh) * 2020-05-29 2020-08-28 京东方科技集团股份有限公司 一种薄膜晶体管开关及其制备方法、阵列基板和显示面板
US11430895B2 (en) * 2020-06-03 2022-08-30 Micron Technology, Inc. Transistors including oxide semiconductive materials, and related microelectronic devices, memory devices, electronic systems, and methods
WO2024236396A1 (ja) * 2023-05-12 2024-11-21 株式会社半導体エネルギー研究所 半導体装置、記憶装置、半導体装置の作製方法
WO2025041671A1 (ja) * 2023-08-24 2025-02-27 東京エレクトロン株式会社 基板処理方法および基板処理装置

Family Cites Families (107)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1997006554A2 (en) 1995-08-03 1997-02-20 Philips Electronics N.V. Semiconductor device provided with transparent switching element
JP3625598B2 (ja) 1995-12-30 2005-03-02 三星電子株式会社 液晶表示装置の製造方法
JP4170454B2 (ja) 1998-07-24 2008-10-22 Ｈｏｙａ株式会社 透明導電性酸化物薄膜を有する物品及びその製造方法
JP2000150861A (ja) 1998-11-16 2000-05-30 Tdk Corp 酸化物薄膜
JP3276930B2 (ja) 1998-11-17 2002-04-22 科学技術振興事業団 トランジスタ及び半導体装置
TW460731B (en) 1999-09-03 2001-10-21 Ind Tech Res Inst Electrode structure and production method of wide viewing angle LCD
JP4089858B2 (ja) 2000-09-01 2008-05-28 国立大学法人東北大学 半導体デバイス
KR20020038482A (ko) 2000-11-15 2002-05-23 모리시타 요이찌 박막 트랜지스터 어레이, 그 제조방법 및 그것을 이용한표시패널
US6531727B2 (en) * 2001-02-09 2003-03-11 Micron Technology, Inc. Open bit line DRAM with ultra thin body transistors
JP3997731B2 (ja) 2001-03-19 2007-10-24 富士ゼロックス株式会社 基材上に結晶性半導体薄膜を形成する方法
JP2002289859A (ja) 2001-03-23 2002-10-04 Minolta Co Ltd 薄膜トランジスタ
JP4090716B2 (ja) 2001-09-10 2008-05-28 雅司 川崎 薄膜トランジスタおよびマトリクス表示装置
JP3925839B2 (ja) 2001-09-10 2007-06-06 シャープ株式会社 半導体記憶装置およびその試験方法
JP2003101012A (ja) 2001-09-25 2003-04-04 Sony Corp 半導体装置およびその製造方法
US7061014B2 (en) 2001-11-05 2006-06-13 Japan Science And Technology Agency Natural-superlattice homologous single crystal thin film, method for preparation thereof, and device using said single crystal thin film
JP4164562B2 (ja) 2002-09-11 2008-10-15 独立行政法人科学技術振興機構 ホモロガス薄膜を活性層として用いる透明薄膜電界効果型トランジスタ
JP4083486B2 (ja) 2002-02-21 2008-04-30 独立行政法人科学技術振興機構 ＬｎＣｕＯ（Ｓ，Ｓｅ，Ｔｅ）単結晶薄膜の製造方法
CN1445821A (zh) 2002-03-15 2003-10-01 三洋电机株式会社 ZnO膜和ZnO半导体层的形成方法、半导体元件及其制造方法
JP3933591B2 (ja) 2002-03-26 2007-06-20 淳二 城戸 有機エレクトロルミネッセント素子
US7339187B2 (en) 2002-05-21 2008-03-04 State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University Transistor structures
JP2004022625A (ja) 2002-06-13 2004-01-22 Murata Mfg Co Ltd 半導体デバイス及び該半導体デバイスの製造方法
US7105868B2 (en) 2002-06-24 2006-09-12 Cermet, Inc. High-electron mobility transistor with zinc oxide
AU2003264342A1 (en) * 2002-08-28 2004-03-19 National Institute Of Advanced Industrial Science And Technology Double-gate type mos field effect transistor and production method therefor
US6632712B1 (en) * 2002-10-03 2003-10-14 Chartered Semiconductor Manufacturing Ltd. Method of fabricating variable length vertical transistors
US7067843B2 (en) 2002-10-11 2006-06-27 E. I. Du Pont De Nemours And Company Transparent oxide semiconductor thin film transistors
US7138685B2 (en) * 2002-12-11 2006-11-21 International Business Machines Corporation Vertical MOSFET SRAM cell
JP4166105B2 (ja) 2003-03-06 2008-10-15 シャープ株式会社 半導体装置およびその製造方法
JP2004273732A (ja) 2003-03-07 2004-09-30 Sharp Corp アクティブマトリクス基板およびその製造方法
JP4108633B2 (ja) 2003-06-20 2008-06-25 シャープ株式会社 薄膜トランジスタおよびその製造方法ならびに電子デバイス
US7262463B2 (en) 2003-07-25 2007-08-28 Hewlett-Packard Development Company, L.P. Transistor including a deposited channel region having a doped portion
CN1998087B (zh) 2004-03-12 2014-12-31 独立行政法人科学技术振兴机构 非晶形氧化物和薄膜晶体管
US7145174B2 (en) 2004-03-12 2006-12-05 Hewlett-Packard Development Company, Lp. Semiconductor device
US7297977B2 (en) 2004-03-12 2007-11-20 Hewlett-Packard Development Company, L.P. Semiconductor device
US7282782B2 (en) 2004-03-12 2007-10-16 Hewlett-Packard Development Company, L.P. Combined binary oxide semiconductor device
US7211825B2 (en) 2004-06-14 2007-05-01 Yi-Chi Shih Indium oxide-based thin film transistors and circuits
JP2006100760A (ja) 2004-09-02 2006-04-13 Casio Comput Co Ltd 薄膜トランジスタおよびその製造方法
US7285501B2 (en) 2004-09-17 2007-10-23 Hewlett-Packard Development Company, L.P. Method of forming a solution processed device
US7298084B2 (en) 2004-11-02 2007-11-20 3M Innovative Properties Company Methods and displays utilizing integrated zinc oxide row and column drivers in conjunction with organic light emitting diodes
US7791072B2 (en) 2004-11-10 2010-09-07 Canon Kabushiki Kaisha Display
KR100953596B1 (ko) 2004-11-10 2010-04-21 캐논 가부시끼가이샤 발광장치
US7453065B2 (en) 2004-11-10 2008-11-18 Canon Kabushiki Kaisha Sensor and image pickup device
CN102945857B (zh) 2004-11-10 2015-06-03 佳能株式会社 无定形氧化物和场效应晶体管
US7863611B2 (en) 2004-11-10 2011-01-04 Canon Kabushiki Kaisha Integrated circuits utilizing amorphous oxides
US7829444B2 (en) 2004-11-10 2010-11-09 Canon Kabushiki Kaisha Field effect transistor manufacturing method
CN101057338B (zh) 2004-11-10 2011-03-16 佳能株式会社 采用无定形氧化物的场效应晶体管
US7579224B2 (en) 2005-01-21 2009-08-25 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a thin film semiconductor device
TWI505473B (zh) 2005-01-28 2015-10-21 半導體能源研究所股份有限公司 半導體裝置，電子裝置，和半導體裝置的製造方法
TWI445178B (zh) 2005-01-28 2014-07-11 半導體能源研究所股份有限公司 半導體裝置，電子裝置，和半導體裝置的製造方法
US7858451B2 (en) 2005-02-03 2010-12-28 Semiconductor Energy Laboratory Co., Ltd. Electronic device, semiconductor device and manufacturing method thereof
US7948171B2 (en) 2005-02-18 2011-05-24 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
US20060197092A1 (en) 2005-03-03 2006-09-07 Randy Hoffman System and method for forming conductive material on a substrate
US8681077B2 (en) 2005-03-18 2014-03-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, and display device, driving method and electronic apparatus thereof
WO2006105077A2 (en) 2005-03-28 2006-10-05 Massachusetts Institute Of Technology Low voltage thin film transistor with high-k dielectric material
US7645478B2 (en) 2005-03-31 2010-01-12 3M Innovative Properties Company Methods of making displays
US8300031B2 (en) 2005-04-20 2012-10-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising transistor having gate and drain connected through a current-voltage conversion element
JP2006344849A (ja) 2005-06-10 2006-12-21 Casio Comput Co Ltd 薄膜トランジスタ
US7402506B2 (en) 2005-06-16 2008-07-22 Eastman Kodak Company Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby
US7691666B2 (en) 2005-06-16 2010-04-06 Eastman Kodak Company Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby
US7507618B2 (en) 2005-06-27 2009-03-24 3M Innovative Properties Company Method for making electronic devices using metal oxide nanoparticles
KR100711890B1 (ko) 2005-07-28 2007-04-25 삼성에스디아이 주식회사 유기 발광표시장치 및 그의 제조방법
JP2007059128A (ja) 2005-08-23 2007-03-08 Canon Inc 有機ｅｌ表示装置およびその製造方法
JP2007073705A (ja) 2005-09-06 2007-03-22 Canon Inc 酸化物半導体チャネル薄膜トランジスタおよびその製造方法
JP5116225B2 (ja) 2005-09-06 2013-01-09 キヤノン株式会社 酸化物半導体デバイスの製造方法
JP4850457B2 (ja) 2005-09-06 2012-01-11 キヤノン株式会社 薄膜トランジスタ及び薄膜ダイオード
JP4280736B2 (ja) 2005-09-06 2009-06-17 キヤノン株式会社 半導体素子
EP1998373A3 (en) 2005-09-29 2012-10-31 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device having oxide semiconductor layer and manufacturing method thereof
JP5037808B2 (ja) 2005-10-20 2012-10-03 キヤノン株式会社 アモルファス酸化物を用いた電界効果型トランジスタ、及び該トランジスタを用いた表示装置
KR101112652B1 (ko) 2005-11-15 2012-02-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 액티브 매트릭스 디스플레이 장치 및 텔레비전 수신기
TWI292281B (en) 2005-12-29 2008-01-01 Ind Tech Res Inst Pixel structure of active organic light emitting diode and method of fabricating the same
US7867636B2 (en) 2006-01-11 2011-01-11 Murata Manufacturing Co., Ltd. Transparent conductive film and method for manufacturing the same
JP4977478B2 (ja) 2006-01-21 2012-07-18 三星電子株式会社 ＺｎＯフィルム及びこれを用いたＴＦＴの製造方法
US7576394B2 (en) 2006-02-02 2009-08-18 Kochi Industrial Promotion Center Thin film transistor including low resistance conductive thin films and manufacturing method thereof
US7977169B2 (en) 2006-02-15 2011-07-12 Kochi Industrial Promotion Center Semiconductor device including active layer made of zinc oxide with controlled orientations and manufacturing method thereof
US7977736B2 (en) * 2006-02-23 2011-07-12 Samsung Electronics Co., Ltd. Vertical channel transistors and memory devices including vertical channel transistors
KR20070101595A (ko) 2006-04-11 2007-10-17 삼성전자주식회사 ＺｎＯ ＴＦＴ
US20070252928A1 (en) 2006-04-28 2007-11-01 Toppan Printing Co., Ltd. Structure, transmission type liquid crystal display, reflection type display and manufacturing method thereof
JP5028033B2 (ja) 2006-06-13 2012-09-19 キヤノン株式会社 酸化物半導体膜のドライエッチング方法
JP4609797B2 (ja) 2006-08-09 2011-01-12 Ｎｅｃ液晶テクノロジー株式会社 薄膜デバイス及びその製造方法
JP4999400B2 (ja) 2006-08-09 2012-08-15 キヤノン株式会社 酸化物半導体膜のドライエッチング方法
JP4332545B2 (ja) 2006-09-15 2009-09-16 キヤノン株式会社 電界効果型トランジスタ及びその製造方法
JP4274219B2 (ja) 2006-09-27 2009-06-03 セイコーエプソン株式会社 電子デバイス、有機エレクトロルミネッセンス装置、有機薄膜半導体装置
JP5164357B2 (ja) 2006-09-27 2013-03-21 キヤノン株式会社 半導体装置及び半導体装置の製造方法
US7622371B2 (en) 2006-10-10 2009-11-24 Hewlett-Packard Development Company, L.P. Fused nanocrystal thin film semiconductor and method
US7772021B2 (en) 2006-11-29 2010-08-10 Samsung Electronics Co., Ltd. Flat panel displays comprising a thin-film transistor having a semiconductive oxide in its channel and methods of fabricating the same for use in flat panel displays
JP2008140684A (ja) 2006-12-04 2008-06-19 Toppan Printing Co Ltd カラーｅｌディスプレイおよびその製造方法
KR101303578B1 (ko) 2007-01-05 2013-09-09 삼성전자주식회사 박막 식각 방법
US8207063B2 (en) 2007-01-26 2012-06-26 Eastman Kodak Company Process for atomic layer deposition
KR100851215B1 (ko) 2007-03-14 2008-08-07 삼성에스디아이 주식회사 박막 트랜지스터 및 이를 이용한 유기 전계 발광표시장치
US7795613B2 (en) 2007-04-17 2010-09-14 Toppan Printing Co., Ltd. Structure with transistor
KR101325053B1 (ko) 2007-04-18 2013-11-05 삼성디스플레이 주식회사 박막 트랜지스터 기판 및 이의 제조 방법
KR20080094300A (ko) 2007-04-19 2008-10-23 삼성전자주식회사 박막 트랜지스터 및 그 제조 방법과 박막 트랜지스터를포함하는 평판 디스플레이
KR101334181B1 (ko) 2007-04-20 2013-11-28 삼성전자주식회사 선택적으로 결정화된 채널층을 갖는 박막 트랜지스터 및 그제조 방법
CN101663762B (zh) 2007-04-25 2011-09-21 佳能株式会社 氧氮化物半导体
KR101345376B1 (ko) 2007-05-29 2013-12-24 삼성전자주식회사 ＺｎＯ 계 박막 트랜지스터 및 그 제조방법
JP5377940B2 (ja) * 2007-12-03 2013-12-25 株式会社半導体エネルギー研究所 半導体装置
JP5215158B2 (ja) 2007-12-17 2013-06-19 富士フイルム株式会社 無機結晶性配向膜及びその製造方法、半導体デバイス
JP4623179B2 (ja) 2008-09-18 2011-02-02 ソニー株式会社 薄膜トランジスタおよびその製造方法
JP5430113B2 (ja) * 2008-10-08 2014-02-26 キヤノン株式会社 電界効果型トランジスタ及びその製造方法
JP5451280B2 (ja) 2008-10-09 2014-03-26 キヤノン株式会社 ウルツ鉱型結晶成長用基板およびその製造方法ならびに半導体装置
TWI487104B (zh) * 2008-11-07 2015-06-01 Semiconductor Energy Lab 半導體裝置和其製造方法
JP5525156B2 (ja) * 2008-12-09 2014-06-18 ピーエスフォー ルクスコ エスエイアールエル 半導体装置、および該半導体装置の製造方法
WO2011052411A1 (en) 2009-10-30 2011-05-05 Semiconductor Energy Laboratory Co., Ltd. Transistor
WO2011062041A1 (en) * 2009-11-20 2011-05-26 Semiconductor Energy Laboratory Co., Ltd. Transistor
JP5520084B2 (ja) 2010-03-03 2014-06-11 富士フイルム株式会社 電界効果型トランジスタの製造方法
TWI508294B (zh) * 2010-08-19 2015-11-11 Semiconductor Energy Lab 半導體裝置
JP2012182354A (ja) * 2011-03-02 2012-09-20 Toshiba Corp 半導体記憶装置
US8723281B2 (en) * 2011-03-23 2014-05-13 Avalanche Technology Inc. Access transistor with a buried gate

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11074944B2 (en) 2018-10-31 2021-07-27 Toshiba Memory Corporation Semiconductor memory device

Also Published As

Publication number Publication date
JP2013251533A (ja) 2013-12-12
US20130285051A1 (en) 2013-10-31
US8772771B2 (en) 2014-07-08

Similar Documents

Publication Publication Date Title
JP6100071B2 (ja) 半導体装置の作製方法
JP7113879B2 (ja) 半導体装置
JP6574861B2 (ja) 半導体装置
JP6416981B2 (ja) 半導体装置
JP6366800B2 (ja) 半導体装置及び半導体装置の製造方法
JP6499246B2 (ja) 半導体装置
JP6419911B2 (ja) 半導体装置
US9219164B2 (en) Semiconductor device with oxide semiconductor channel
JP6230808B2 (ja) 半導体装置
JP6186166B2 (ja) 半導体装置
JP6293818B2 (ja) 半導体装置の作製方法
KR20260006486A (ko) 반도체 장치
JP2018121061A (ja) 半導体装置

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20160328

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20160328

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20170131

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20170214

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20170222

R150 Certificate of patent or registration of utility model

Ref document number: 6100071

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees