JP6097216B2 - 電子デバイス用のゲート絶縁層 - Google Patents

電子デバイス用のゲート絶縁層 Download PDF

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Publication number
JP6097216B2
JP6097216B2 JP2013526346A JP2013526346A JP6097216B2 JP 6097216 B2 JP6097216 B2 JP 6097216B2 JP 2013526346 A JP2013526346 A JP 2013526346A JP 2013526346 A JP2013526346 A JP 2013526346A JP 6097216 B2 JP6097216 B2 JP 6097216B2
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Prior art keywords
polymer
insulating layer
gate insulating
group
formula
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Japanese (ja)
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JP2013541191A (ja
JP2013541191A5 (fr
Inventor
ミュラー,デイヴィッド,クリストフ
カル,トビー
ミスキーウィチ,パウエル
カラスコ−オロツコ,ミゲル
ベル,アンドリュー
エルス,エドモンド
ローデス,ラリー,エフ.
藤田一義
エヌジー,ヘンドラ
カンダナラチチ,プラモッド
スミス,スティーブン
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Merck Patent GmbH
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Merck Patent GmbH
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Publication of JP2013541191A publication Critical patent/JP2013541191A/ja
Publication of JP2013541191A5 publication Critical patent/JP2013541191A5/ja
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40Organic transistors
    • H10K10/46Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462Insulated gate field-effect transistors [IGFETs]
    • H10K10/468Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/471Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising only organic materials
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F32/00Homopolymers and copolymers of cyclic compounds having no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic ring system
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F232/00Copolymers of cyclic compounds containing no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic ring system
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F32/00Homopolymers and copolymers of cyclic compounds having no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic ring system
    • C08F32/02Homopolymers and copolymers of cyclic compounds having no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic ring system having no condensed rings
    • C08F32/04Homopolymers and copolymers of cyclic compounds having no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic ring system having no condensed rings having one carbon-to-carbon double bond
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L45/00Compositions of homopolymers or copolymers of compounds having no unsaturated aliphatic radicals in side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic or in a heterocyclic ring system; Compositions of derivatives of such polymers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40Organic transistors
    • H10K10/46Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462Insulated gate field-effect transistors [IGFETs]
    • H10K10/468Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/478Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising a layer of composite material comprising interpenetrating or embedded materials, e.g. TiO2 particles in a polymer matrix
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10Organic polymers or oligomers
    • H10K85/111Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10Organic polymers or oligomers
    • H10K85/141Organic polymers or oligomers comprising aliphatic or olefinic chains, e.g. poly N-vinylcarbazol, PVC or PTFE
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10Organic polymers or oligomers
    • H10K85/151Copolymers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40Organic transistors
    • H10K10/46Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462Insulated gate field-effect transistors [IGFETs]
    • H10K10/464Lateral top-gate IGFETs comprising only a single gate
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40Organic transistors
    • H10K10/46Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462Insulated gate field-effect transistors [IGFETs]
    • H10K10/466Lateral bottom-gate IGFETs comprising only a single gate
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/80Constructional details
    • H10K10/88Passivation; Containers; Encapsulations

Landscapes

  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Composite Materials (AREA)
  • Thin Film Transistor (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Heterocyclic Carbon Compounds Containing A Hetero Ring Having Oxygen Or Sulfur (AREA)
  • Formation Of Insulating Films (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2013526346A 2010-09-02 2011-08-26 電子デバイス用のゲート絶縁層 Active JP6097216B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
EP10009118 2010-09-02
EP10009118.0 2010-09-02
US37979910P 2010-09-03 2010-09-03
US61/379,799 2010-09-03
PCT/EP2011/004282 WO2012028279A1 (fr) 2010-09-02 2011-08-26 Couche isolante de grille destinée à des dispositifs électroniques

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2017027227A Division JP6334020B2 (ja) 2010-09-02 2017-02-16 電子デバイス用のゲート絶縁層

Publications (3)

Publication Number Publication Date
JP2013541191A JP2013541191A (ja) 2013-11-07
JP2013541191A5 JP2013541191A5 (fr) 2014-10-16
JP6097216B2 true JP6097216B2 (ja) 2017-03-15

Family

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JP2013526346A Active JP6097216B2 (ja) 2010-09-02 2011-08-26 電子デバイス用のゲート絶縁層
JP2017027227A Active JP6334020B2 (ja) 2010-09-02 2017-02-16 電子デバイス用のゲート絶縁層

Family Applications After (1)

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JP2017027227A Active JP6334020B2 (ja) 2010-09-02 2017-02-16 電子デバイス用のゲート絶縁層

Country Status (11)

Country Link
US (2) US9175123B2 (fr)
EP (2) EP2611841B1 (fr)
JP (2) JP6097216B2 (fr)
KR (1) KR101842735B1 (fr)
CN (3) CN105038069B (fr)
DE (1) DE112011102917T5 (fr)
GB (1) GB2497451A (fr)
RU (1) RU2013114414A (fr)
SG (1) SG187955A1 (fr)
TW (1) TWI618723B (fr)
WO (1) WO2012028279A1 (fr)

Families Citing this family (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2436056B1 (fr) * 2009-05-25 2016-08-03 Basf Se Dispositif électronique comprenant diélectriques organiques réticulables et son procédé de préparation
EP2676978B1 (fr) 2010-09-02 2015-06-24 Merck Patent GmbH Couche intermédiaire destinée à des dispositifs électroniques
SG187955A1 (en) * 2010-09-02 2013-03-28 Merck Patent Gmbh Gate insulator layer for electronic devices
US9082981B1 (en) 2012-01-16 2015-07-14 Polyera Corporation Curable polymeric materials and related electronic devices
WO2013120581A1 (fr) 2012-02-15 2013-08-22 Merck Patent Gmbh Couche de planarisation pour dispositifs électroniques organiques
CN104245783B (zh) * 2012-04-25 2017-12-12 默克专利股份有限公司 用于有机电子器件的堤岸结构
US9171961B2 (en) * 2012-07-11 2015-10-27 Polyera Corporation Coating materials for oxide thin film transistors
WO2014037076A1 (fr) * 2012-09-04 2014-03-13 Merck Patent Gmbh Procédé de modification de surface de structures diélectriques dans des dispositifs électroniques organiques
EP2898551B1 (fr) * 2012-09-21 2020-04-22 Merck Patent GmbH Formulations de semi-conducteur organique
TWI554534B (zh) * 2012-09-25 2016-10-21 住友電木股份有限公司 含馬來醯亞胺之環烯烴聚合物及其應用
WO2014072016A1 (fr) * 2012-11-08 2014-05-15 Merck Patent Gmbh Procédé de production de dispositifs électroniques organiques avec des structures de banque, structures de banque et dispositifs électroniques produits de cette manière
US9035287B2 (en) * 2013-02-01 2015-05-19 Polyera Corporation Polymeric materials for use in metal-oxide-semiconductor field-effect transistors
US9786409B2 (en) * 2013-06-27 2017-10-10 Basf Se Metathesis polymers as dielectrics
US9356248B2 (en) * 2013-08-16 2016-05-31 Palo Alto Research Center Incorporated Organic thin-film transistor
KR101718941B1 (ko) 2013-09-30 2017-03-22 주식회사 엘지화학 광반응기를 갖는 고리형 올레핀 화합물 및 광반응성 중합체
CN106068569B (zh) * 2014-03-12 2019-03-22 默克专利股份有限公司 有机电子组合物及其器件
JP6118287B2 (ja) * 2014-03-26 2017-04-19 富士フイルム株式会社 半導体素子及び半導体素子の絶縁層形成用組成物
WO2015170577A1 (fr) * 2014-05-08 2015-11-12 富士フイルム株式会社 Élément semi-conducteur et composition de formation de couche isolante
TWI659046B (zh) 2015-05-06 2019-05-11 Sumitomo Bakelite Co., Ltd. 作爲永久介電材料的順丁烯二醯亞胺及環烯烴單體之聚合物
US10147895B2 (en) 2015-07-13 2018-12-04 Flexterra, Inc. Curable polymeric materials and their use for fabricating electronic devices
US20180273722A1 (en) * 2015-08-31 2018-09-27 Zeon Corporation Resin composition
DE102015119939A1 (de) 2015-11-18 2017-05-18 ALTANA Aktiengesellschaft Vernetzbare polymere Materialien für dielektrische Schichten in elektronischen Bauteilen
US10429734B2 (en) 2015-11-30 2019-10-01 Promerus, Llc Permanent dielectric compositions containing photoacid generator and base
KR102465353B1 (ko) 2015-12-02 2022-11-10 삼성전자주식회사 전계 효과 트랜지스터 및 이를 포함하는 반도체 소자
EP3417033B1 (fr) * 2016-02-17 2021-02-24 Merck Patent GmbH Formulation de substance fonctionnelle organique
CN108886096B (zh) * 2016-03-22 2022-10-28 普罗米鲁斯有限责任公司 含有双吖丙啶的有机电子组合物和其器件
US10879474B2 (en) * 2016-05-18 2020-12-29 Promerus, Llc Organic dielectric layer and organic electronic device
TWI732994B (zh) 2017-02-09 2021-07-11 日商住友電木股份有限公司 光配向膜形成用組成物及由其衍生之lcd器件
WO2019130337A1 (fr) * 2017-12-27 2019-07-04 Indian Institute Of Technology, Guwahati Procédé de fabrication de système diélectrique multicouche à contrainte de polarisation réduite fonctionnant à ultra-basse tension comprenant des transistors à effet de champ organiques de type n
WO2019130336A1 (fr) * 2017-12-27 2019-07-04 Indian Institute Of Technology, Guwahati Procédé de fabrication d'un transistor à effet de champ organique stable, à tension de fonctionnement très basse et à traitement en solution
JP2021512184A (ja) 2018-01-19 2021-05-13 フレックステッラ・インコーポレイテッド 有機誘電体材料及びそれらを含むデバイス
US20210284812A1 (en) 2018-06-28 2021-09-16 Merck Patent Gmbh Method for producing an electronic device
TWI794520B (zh) * 2018-06-29 2023-03-01 日商住友電木股份有限公司 作為 3d 列印材料之聚環烯烴單體及由能夠產生光酸之化合物活化之催化劑
US11059938B2 (en) 2018-10-05 2021-07-13 Industrial Technology Research Institute Film composition and a film prepared thereby
CN109698276A (zh) * 2018-12-27 2019-04-30 广州天极电子科技有限公司 一种薄膜晶体管器件及其制备方法
WO2020165270A1 (fr) 2019-02-12 2020-08-20 The University Of Southampton Dispositif comprenant une couche piézoélectriquement active et procédé de production d'un tel dispositif
WO2020243381A1 (fr) * 2019-05-31 2020-12-03 Promerus, Llc Compositions de polycyclooléfine photodurcissables rapides utilisées en tant que matériaux d'impression optiques ou 3d
CN111848930B (zh) * 2020-07-30 2021-07-13 清华大学 可溶性聚苯并呋喃及其制备方法与在合成5-取代苯并呋喃的应用
KR102476024B1 (ko) * 2021-01-19 2022-12-08 한국화학연구원 유기절연체 형성용 조성물 및 이를 포함하는 유기 절연체 및 박막 트랜지스터
DE102021125407A1 (de) 2021-09-30 2023-03-30 Polymer Competence Center Leoben Gmbh Verfahren zur Herstellung eines Dielektrikums für einen Kondensator und Verfahren zur Herstellung eines Kondensators und Kondensator
CN114316215B (zh) * 2022-01-27 2023-07-04 安徽建筑大学 一种自交联成炭本征阻燃聚双环戊二烯工程材料及其制备方法
CN116217805A (zh) * 2023-01-07 2023-06-06 中北大学 一种降冰片烯基三铵类阳离子聚合物及其制备方法和应用

Family Cites Families (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1278780A (en) 1968-12-24 1972-06-21 Agfa Gevaert Photodimerisation and photopolymerisation of bis-maleimides
US4565873A (en) 1978-08-30 1986-01-21 Ciba-Geigy Corporation Silanes containing imide groups
US5468819A (en) 1993-11-16 1995-11-21 The B.F. Goodrich Company Process for making polymers containing a norbornene repeating unit by addition polymerization using an organo (nickel or palladium) complex
US5789757A (en) 1996-09-10 1998-08-04 The Dexter Corporation Malemide containing formulations and uses therefor
US5861235A (en) 1996-06-26 1999-01-19 Dow Corning Asia, Ltd. Ultraviolet-curable composition and method for patterning the cured product therefrom
US6890847B1 (en) 2000-02-22 2005-05-10 Micron Technology, Inc. Polynorbornene foam insulation for integrated circuits
US6677175B2 (en) 2000-07-28 2004-01-13 Promerus, Llc Optical waveguides and methods for making the same
US6423780B1 (en) * 2001-02-07 2002-07-23 Loctite Heterobifunctional monomers and uses therefor
US6690029B1 (en) 2001-08-24 2004-02-10 University Of Kentucky Research Foundation Substituted pentacenes and electronic devices made with substituted pentacenes
GB0130321D0 (en) * 2001-12-19 2002-02-06 Avecia Ltd Electronic devices
AU2002343058A1 (en) 2001-12-19 2003-06-30 Merck Patent Gmbh Organic field effect transistor with an organic dielectric
US20060020068A1 (en) * 2004-07-07 2006-01-26 Edmund Elce Photosensitive compositions based on polycyclic polymers for low stress, high temperature films
US7674847B2 (en) 2003-02-21 2010-03-09 Promerus Llc Vinyl addition polycyclic olefin polymers prepared with non-olefinic chain transfer agents and uses thereof
WO2005007676A2 (fr) 2003-07-10 2005-01-27 Rajadhyaksha V J Glycopeptides pour le traitement de la sla et d'autres troubles metaboliques et autoimmuns
ATE475971T1 (de) 2003-11-28 2010-08-15 Merck Patent Gmbh Organische halbleiterschicht-formulierungen mit polyacenen und organischen binderpolymeren
US7378456B2 (en) * 2004-01-30 2008-05-27 Promerus Llc Directly photodefinable polymer compositions and methods thereof
US20050192409A1 (en) 2004-02-13 2005-09-01 Rhodes Larry F. Polymers of polycyclic olefins having a polyhedral oligosilsesquioxane pendant group and uses thereof
US7385221B1 (en) 2005-03-08 2008-06-10 University Of Kentucky Research Foundation Silylethynylated heteroacenes and electronic devices made therewith
JP2007150246A (ja) 2005-11-02 2007-06-14 Ricoh Co Ltd 有機トランジスタ及び表示装置
JP2007251093A (ja) * 2006-03-20 2007-09-27 Nippon Zeon Co Ltd ゲート絶縁膜、有機薄膜トランジスタ、該トランジスタの製造方法及び表示装置
JP2008130910A (ja) * 2006-11-22 2008-06-05 Nippon Zeon Co Ltd 有機薄膜トランジスタ
CN101622289A (zh) * 2006-12-06 2010-01-06 普罗米鲁斯有限责任公司 可直接光限定的聚合物组合物及其方法
US8053515B2 (en) 2006-12-06 2011-11-08 Promerus Llc Directly photodefinable polymer compositions and methods thereof
TWI332284B (en) 2006-12-29 2010-10-21 Ind Tech Res Inst A battery electrode paste composition containing modified maleimides
JP4872735B2 (ja) * 2007-03-19 2012-02-08 住友ベークライト株式会社 マレイミド基含有ポリノルボルネンを用いた新規光導波路
JP2008244362A (ja) * 2007-03-28 2008-10-09 Seiko Epson Corp 半導体装置の製造方法、半導体装置、半導体回路、電気光学装置および電子機器
KR101475097B1 (ko) * 2007-04-25 2014-12-23 메르크 파텐트 게엠베하 전자 디바이스의 제조 방법
US8309952B2 (en) * 2007-08-28 2012-11-13 Toppan Printing Co., Ltd. Thin film transistor and method for manufacturing the same
EP2277944A3 (fr) 2009-07-24 2012-01-04 Electronics and Telecommunications Research Institute Composition pour transistor diélectrique organique et transistor de film mince organique formé en l'utilisant
EP2676978B1 (fr) 2010-09-02 2015-06-24 Merck Patent GmbH Couche intermédiaire destinée à des dispositifs électroniques
SG187955A1 (en) * 2010-09-02 2013-03-28 Merck Patent Gmbh Gate insulator layer for electronic devices

Also Published As

Publication number Publication date
CN105038069A (zh) 2015-11-11
JP2013541191A (ja) 2013-11-07
GB201303582D0 (en) 2013-04-10
CN105038069B (zh) 2017-10-17
CN103261250A (zh) 2013-08-21
WO2012028279A9 (fr) 2012-05-31
KR101842735B1 (ko) 2018-03-27
WO2012028279A1 (fr) 2012-03-08
US20120056183A1 (en) 2012-03-08
TW201219432A (en) 2012-05-16
US9647222B2 (en) 2017-05-09
EP2676979B1 (fr) 2016-07-13
CN104877292A (zh) 2015-09-02
DE112011102917T5 (de) 2013-09-05
EP2611841B1 (fr) 2015-10-28
SG187955A1 (en) 2013-03-28
US9175123B2 (en) 2015-11-03
EP2676979A1 (fr) 2013-12-25
RU2013114414A (ru) 2014-10-10
KR20130114121A (ko) 2013-10-16
US20150372246A1 (en) 2015-12-24
JP6334020B2 (ja) 2018-05-30
EP2611841A1 (fr) 2013-07-10
TWI618723B (zh) 2018-03-21
JP2017141446A (ja) 2017-08-17
CN103261250B (zh) 2016-11-09
GB2497451A8 (en) 2013-06-19
GB2497451A (en) 2013-06-12

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