JP6096803B2 - 静電基板保持具を含む支持具 - Google Patents
静電基板保持具を含む支持具 Download PDFInfo
- Publication number
- JP6096803B2 JP6096803B2 JP2014548131A JP2014548131A JP6096803B2 JP 6096803 B2 JP6096803 B2 JP 6096803B2 JP 2014548131 A JP2014548131 A JP 2014548131A JP 2014548131 A JP2014548131 A JP 2014548131A JP 6096803 B2 JP6096803 B2 JP 6096803B2
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- JP
- Japan
- Prior art keywords
- substrate holder
- support
- substrate
- shoulder
- strip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000000758 substrate Substances 0.000 title claims description 84
- 230000002093 peripheral effect Effects 0.000 claims description 6
- 230000008878 coupling Effects 0.000 claims description 2
- 238000010168 coupling process Methods 0.000 claims description 2
- 238000005859 coupling reaction Methods 0.000 claims description 2
- 230000000149 penetrating effect Effects 0.000 claims description 2
- 239000004615 ingredient Substances 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 description 12
- 239000002184 metal Substances 0.000 description 12
- 239000001307 helium Substances 0.000 description 7
- 229910052734 helium Inorganic materials 0.000 description 7
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 7
- 150000002500 ions Chemical class 0.000 description 7
- 238000000034 method Methods 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 230000001133 acceleration Effects 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000008014 freezing Effects 0.000 description 1
- 238000007710 freezing Methods 0.000 description 1
- 239000004519 grease Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/48—Ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
Landscapes
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Description
バイアステーブル10、
基板保持具20、及び
固定用カラー30、
である。
アノード・基板キャパシタ、及び
基板・カソードキャパシタの、
二つのキャパシタを供給することにある。
導電性であり、バイアス電圧がかけられたテーブルと、
肩部を有する円筒形状で、絶縁性の静電基板保持具と、
該肩部を該バイアス電圧がかけられたテーブルに固定するための導電性の固定用カラーと、
を備え、
該基板保持具の底面は、該バイアス電圧がかけられたテーブルに向き合っており、該基板保持具の上面は、基板を受けるように設計された支持面をなし、
該支持面を該肩部に結合するための少なくとも一つの導電性エレメントをさらに含む。
該上面の周縁部に配置された第1のストリップと、
該円筒上で、該第1のストリップと該肩部との間に伸びる第2のストリップと、
該第2のストリップに接触し、該肩部に配置された第3のストリップと、
を含む。
該肩部の位置で、該基板保持具に配置された導電性接触面と、
該支持面を規定するように、該上面から突出した、該接触面に結合された複数の電極と、
を含む。
Claims (9)
- 導電性であり、バイアス電圧がかけられたテーブル(10)と、
肩部(211)を有する円筒形状で、絶縁性の静電基板保持具(20)と、
該肩部(211)を該バイアス電圧がかけられたテーブル(10)に固定するための導電性の固定用カラー(30)と、
を備えた支持具であって、
該基板保持具(20)の底面は、該バイアス電圧がかけられたテーブル(10)に向き合っており、該基板保持具(20)の上面(22,212)は、基板(40)を受けるように設計された支持面をなし、
該支持面を該肩部(211)に結合するための少なくとも一つの導電性エレメント(201−202−203,213−215)を含む支持具。 - 該導電性エレメントが、
該上面(22)の周縁部に配置された第1のストリップ(201)と、
該円筒上で、該第1のストリップ(201)と該肩部(211)との間に伸びる第2のストリップ(202)と、
該第2のストリップ(202)に接触し、該肩部(211)に配置された第3のストリップ(203)と、
を含む請求項1に記載の支持具。 - 該基板保持具(20)を貫通し、該バイアス電圧がかけられたテーブル(10)と該支持面とを電気的に接触させる複数の電極(28−29)を含む請求項2に記載の支持具。
- 該導電性エレメントが、
該肩部(211)の位置で、該基板保持具(210)に配置された導電性接触面(213)と、
該支持面を規定するように、該上面(212)から突出した、該接触面(213)に結合された複数の電極(215)と、
を含む請求項1に記載の支持具。 - 該支持面の下の位置で、該上面(212)の周縁部に配置されたストリップ(231)をさらに含み、該基板保持具(210)は、上面及び底面において開口した、少なくとも一つの開口部(217)を含む請求項4に記載の支持具。
- 該上面(22,212)と該バイアス電圧がかけられたテーブル(10)との間に挿入された導電性層をさらに含む請求項3に記載の支持具。
- 該複数の電極(215)が、めっきスルーホールの形状である請求項3から5のいずれかに記載の支持具。
- 該底面の周囲に、該バイアス電圧がかけられたテーブル(10)と接触するガスケット(12)をさらに含む請求項1から5のいずれかに記載の支持具。
- 該底面と該バイアス電圧がかけられたテーブル(10)との間に挿入された熱伝導性層をさらに含む請求項1から5のいずれかに記載の支持具。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1103981 | 2011-12-21 | ||
FR1103981A FR2985087B1 (fr) | 2011-12-21 | 2011-12-21 | Support comportant un porte-substrat electrostatique |
PCT/FR2012/000530 WO2013093238A1 (fr) | 2011-12-21 | 2012-12-19 | Support comportant un porte-substrat électrostatique |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2015504244A JP2015504244A (ja) | 2015-02-05 |
JP6096803B2 true JP6096803B2 (ja) | 2017-03-15 |
Family
ID=47741152
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014548131A Active JP6096803B2 (ja) | 2011-12-21 | 2012-12-19 | 静電基板保持具を含む支持具 |
Country Status (9)
Country | Link |
---|---|
US (1) | US11053582B2 (ja) |
EP (1) | EP2795670B1 (ja) |
JP (1) | JP6096803B2 (ja) |
KR (1) | KR102028497B1 (ja) |
CN (1) | CN104011846B (ja) |
FR (1) | FR2985087B1 (ja) |
SG (1) | SG11201403408SA (ja) |
TW (1) | TWI521638B (ja) |
WO (1) | WO2013093238A1 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2981193B1 (fr) * | 2011-10-06 | 2014-05-23 | Ion Beam Services | Procede de commande d'un implanteur ionique en mode immersion plasma. |
FR3017487B1 (fr) * | 2014-02-07 | 2016-03-18 | Ion Beam Services | Porte-substrat electrostatique chauffant et polarise en haute tension |
Family Cites Families (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2106325A (en) * | 1981-09-14 | 1983-04-07 | Philips Electronic Associated | Electrostatic chuck |
JPH0697676B2 (ja) * | 1985-11-26 | 1994-11-30 | 忠弘 大見 | ウエハサセプタ装置 |
JPH0563063A (ja) * | 1991-09-02 | 1993-03-12 | Nikon Corp | 静電チヤツク装置 |
JP2817585B2 (ja) * | 1993-09-10 | 1998-10-30 | 住友金属工業株式会社 | 試料の離脱方法 |
JPH07221590A (ja) * | 1994-01-31 | 1995-08-18 | Matsushita Electric Ind Co Ltd | 電子部品とその製造方法 |
JP2987085B2 (ja) * | 1995-06-28 | 1999-12-06 | 日本碍子株式会社 | 半導体ウエハー保持装置、その製造方法およびその使用方法 |
JPH0982788A (ja) * | 1995-07-10 | 1997-03-28 | Anelva Corp | 静電チャックおよびその製造方法 |
JPH09129716A (ja) * | 1995-11-02 | 1997-05-16 | Hitachi Ltd | 静電吸着装置とその製造方法、ウエハ処理方法 |
US5764471A (en) * | 1996-05-08 | 1998-06-09 | Applied Materials, Inc. | Method and apparatus for balancing an electrostatic force produced by an electrostatic chuck |
US6074488A (en) * | 1997-09-16 | 2000-06-13 | Applied Materials, Inc | Plasma chamber support having an electrically coupled collar ring |
JPH11297804A (ja) * | 1998-04-10 | 1999-10-29 | Shin Etsu Chem Co Ltd | 静電チャック |
JP3980187B2 (ja) * | 1998-07-24 | 2007-09-26 | 日本碍子株式会社 | 半導体保持装置、その製造方法およびその使用方法 |
JP2000183146A (ja) * | 1998-12-18 | 2000-06-30 | Ibiden Co Ltd | 静電チャック |
US6291777B1 (en) * | 1999-02-17 | 2001-09-18 | Applied Materials, Inc. | Conductive feed-through for creating a surface electrode connection within a dielectric body and method of fabricating same |
US20030010292A1 (en) * | 2001-07-16 | 2003-01-16 | Applied Materials, Inc. | Electrostatic chuck with dielectric coating |
US6646233B2 (en) * | 2002-03-05 | 2003-11-11 | Hitachi High-Technologies Corporation | Wafer stage for wafer processing apparatus and wafer processing method |
US7126808B2 (en) | 2003-04-01 | 2006-10-24 | Varian Semiconductor Equipment Associates, Inc. | Wafer platen equipped with electrostatic clamp, wafer backside gas cooling, and high voltage operation capability for plasma doping |
US20050042881A1 (en) * | 2003-05-12 | 2005-02-24 | Tokyo Electron Limited | Processing apparatus |
JP2005260011A (ja) * | 2004-03-12 | 2005-09-22 | Hitachi High-Technologies Corp | ウエハ処理装置およびウエハ処理方法 |
KR100610010B1 (ko) * | 2004-07-20 | 2006-08-08 | 삼성전자주식회사 | 반도체 식각 장치 |
CN101278385B (zh) * | 2004-11-04 | 2011-10-12 | 株式会社爱发科 | 静电吸盘装置 |
JP2007324260A (ja) * | 2006-05-31 | 2007-12-13 | Tomoegawa Paper Co Ltd | 静電チャック部材および静電チャック装置 |
JP4890421B2 (ja) * | 2006-10-31 | 2012-03-07 | 太平洋セメント株式会社 | 静電チャック |
JP2010080717A (ja) * | 2008-09-26 | 2010-04-08 | Tokyo Electron Ltd | プラズマ処理装置用の載置台 |
-
2011
- 2011-12-21 FR FR1103981A patent/FR2985087B1/fr not_active Expired - Fee Related
-
2012
- 2012-12-14 TW TW101147474A patent/TWI521638B/zh active
- 2012-12-19 JP JP2014548131A patent/JP6096803B2/ja active Active
- 2012-12-19 CN CN201280063150.6A patent/CN104011846B/zh active Active
- 2012-12-19 SG SG11201403408SA patent/SG11201403408SA/en unknown
- 2012-12-19 WO PCT/FR2012/000530 patent/WO2013093238A1/fr active Application Filing
- 2012-12-19 KR KR1020147018472A patent/KR102028497B1/ko active IP Right Grant
- 2012-12-19 EP EP12824902.6A patent/EP2795670B1/fr active Active
- 2012-12-19 US US14/367,015 patent/US11053582B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
WO2013093238A1 (fr) | 2013-06-27 |
EP2795670A1 (fr) | 2014-10-29 |
FR2985087A1 (fr) | 2013-06-28 |
US11053582B2 (en) | 2021-07-06 |
KR102028497B1 (ko) | 2019-10-04 |
TW201349382A (zh) | 2013-12-01 |
FR2985087B1 (fr) | 2014-03-07 |
KR20140107373A (ko) | 2014-09-04 |
US20140326176A1 (en) | 2014-11-06 |
EP2795670B1 (fr) | 2016-03-09 |
TWI521638B (zh) | 2016-02-11 |
JP2015504244A (ja) | 2015-02-05 |
SG11201403408SA (en) | 2014-09-26 |
CN104011846A (zh) | 2014-08-27 |
CN104011846B (zh) | 2016-10-05 |
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