SG11201403408SA - Support including an electrostatic substrate holder - Google Patents

Support including an electrostatic substrate holder

Info

Publication number
SG11201403408SA
SG11201403408SA SG11201403408SA SG11201403408SA SG11201403408SA SG 11201403408S A SG11201403408S A SG 11201403408SA SG 11201403408S A SG11201403408S A SG 11201403408SA SG 11201403408S A SG11201403408S A SG 11201403408SA SG 11201403408S A SG11201403408S A SG 11201403408SA
Authority
SG
Singapore
Prior art keywords
substrate holder
support including
electrostatic substrate
electrostatic
support
Prior art date
Application number
SG11201403408SA
Other languages
English (en)
Inventor
Frank Torregrosa
Laurent Roux
Original Assignee
Ion Beam Services
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ion Beam Services filed Critical Ion Beam Services
Publication of SG11201403408SA publication Critical patent/SG11201403408SA/en

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50Substrate holders
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67063Apparatus for fluid treatment for etching
    • H01L21/67069Apparatus for fluid treatment for etching for drying etching
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/48Ion implantation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67242Apparatus for monitoring, sorting or marking
    • H01L21/67248Temperature monitoring
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833Details of electrostatic chucks

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
SG11201403408SA 2011-12-21 2012-12-19 Support including an electrostatic substrate holder SG11201403408SA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1103981A FR2985087B1 (fr) 2011-12-21 2011-12-21 Support comportant un porte-substrat electrostatique
PCT/FR2012/000530 WO2013093238A1 (fr) 2011-12-21 2012-12-19 Support comportant un porte-substrat électrostatique

Publications (1)

Publication Number Publication Date
SG11201403408SA true SG11201403408SA (en) 2014-09-26

Family

ID=47741152

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201403408SA SG11201403408SA (en) 2011-12-21 2012-12-19 Support including an electrostatic substrate holder

Country Status (9)

Country Link
US (1) US11053582B2 (ja)
EP (1) EP2795670B1 (ja)
JP (1) JP6096803B2 (ja)
KR (1) KR102028497B1 (ja)
CN (1) CN104011846B (ja)
FR (1) FR2985087B1 (ja)
SG (1) SG11201403408SA (ja)
TW (1) TWI521638B (ja)
WO (1) WO2013093238A1 (ja)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2981193B1 (fr) * 2011-10-06 2014-05-23 Ion Beam Services Procede de commande d'un implanteur ionique en mode immersion plasma.
FR3017487B1 (fr) * 2014-02-07 2016-03-18 Ion Beam Services Porte-substrat electrostatique chauffant et polarise en haute tension

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2106325A (en) * 1981-09-14 1983-04-07 Philips Electronic Associated Electrostatic chuck
JPH0697676B2 (ja) * 1985-11-26 1994-11-30 忠弘 大見 ウエハサセプタ装置
JPH0563063A (ja) * 1991-09-02 1993-03-12 Nikon Corp 静電チヤツク装置
JP2817585B2 (ja) * 1993-09-10 1998-10-30 住友金属工業株式会社 試料の離脱方法
JPH07221590A (ja) * 1994-01-31 1995-08-18 Matsushita Electric Ind Co Ltd 電子部品とその製造方法
JP2987085B2 (ja) * 1995-06-28 1999-12-06 日本碍子株式会社 半導体ウエハー保持装置、その製造方法およびその使用方法
JPH0982788A (ja) * 1995-07-10 1997-03-28 Anelva Corp 静電チャックおよびその製造方法
JPH09129716A (ja) * 1995-11-02 1997-05-16 Hitachi Ltd 静電吸着装置とその製造方法、ウエハ処理方法
US5764471A (en) * 1996-05-08 1998-06-09 Applied Materials, Inc. Method and apparatus for balancing an electrostatic force produced by an electrostatic chuck
US6074488A (en) * 1997-09-16 2000-06-13 Applied Materials, Inc Plasma chamber support having an electrically coupled collar ring
JPH11297804A (ja) * 1998-04-10 1999-10-29 Shin Etsu Chem Co Ltd 静電チャック
JP3980187B2 (ja) * 1998-07-24 2007-09-26 日本碍子株式会社 半導体保持装置、その製造方法およびその使用方法
JP2000183146A (ja) * 1998-12-18 2000-06-30 Ibiden Co Ltd 静電チャック
US6291777B1 (en) * 1999-02-17 2001-09-18 Applied Materials, Inc. Conductive feed-through for creating a surface electrode connection within a dielectric body and method of fabricating same
US20030010292A1 (en) * 2001-07-16 2003-01-16 Applied Materials, Inc. Electrostatic chuck with dielectric coating
US6646233B2 (en) * 2002-03-05 2003-11-11 Hitachi High-Technologies Corporation Wafer stage for wafer processing apparatus and wafer processing method
US7126808B2 (en) 2003-04-01 2006-10-24 Varian Semiconductor Equipment Associates, Inc. Wafer platen equipped with electrostatic clamp, wafer backside gas cooling, and high voltage operation capability for plasma doping
CN1310285C (zh) * 2003-05-12 2007-04-11 东京毅力科创株式会社 处理装置
JP2005260011A (ja) * 2004-03-12 2005-09-22 Hitachi High-Technologies Corp ウエハ処理装置およびウエハ処理方法
KR100610010B1 (ko) * 2004-07-20 2006-08-08 삼성전자주식회사 반도체 식각 장치
KR20080107473A (ko) * 2004-11-04 2008-12-10 가부시키가이샤 알박 정전 척 장치
JP2007324260A (ja) * 2006-05-31 2007-12-13 Tomoegawa Paper Co Ltd 静電チャック部材および静電チャック装置
JP4890421B2 (ja) * 2006-10-31 2012-03-07 太平洋セメント株式会社 静電チャック
JP2010080717A (ja) * 2008-09-26 2010-04-08 Tokyo Electron Ltd プラズマ処理装置用の載置台

Also Published As

Publication number Publication date
US20140326176A1 (en) 2014-11-06
FR2985087B1 (fr) 2014-03-07
TWI521638B (zh) 2016-02-11
JP2015504244A (ja) 2015-02-05
KR102028497B1 (ko) 2019-10-04
WO2013093238A1 (fr) 2013-06-27
EP2795670B1 (fr) 2016-03-09
KR20140107373A (ko) 2014-09-04
JP6096803B2 (ja) 2017-03-15
CN104011846B (zh) 2016-10-05
FR2985087A1 (fr) 2013-06-28
CN104011846A (zh) 2014-08-27
TW201349382A (zh) 2013-12-01
US11053582B2 (en) 2021-07-06
EP2795670A1 (fr) 2014-10-29

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