SG11201403408SA - Support including an electrostatic substrate holder - Google Patents

Support including an electrostatic substrate holder

Info

Publication number
SG11201403408SA
SG11201403408SA SG11201403408SA SG11201403408SA SG11201403408SA SG 11201403408S A SG11201403408S A SG 11201403408SA SG 11201403408S A SG11201403408S A SG 11201403408SA SG 11201403408S A SG11201403408S A SG 11201403408SA SG 11201403408S A SG11201403408S A SG 11201403408SA
Authority
SG
Singapore
Prior art keywords
substrate holder
support including
electrostatic substrate
electrostatic
support
Prior art date
Application number
SG11201403408SA
Inventor
Frank Torregrosa
Laurent Roux
Original Assignee
Ion Beam Services
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ion Beam Services filed Critical Ion Beam Services
Publication of SG11201403408SA publication Critical patent/SG11201403408SA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/48—Ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
SG11201403408SA 2011-12-21 2012-12-19 Support including an electrostatic substrate holder SG11201403408SA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1103981A FR2985087B1 (en) 2011-12-21 2011-12-21 SUPPORT COMPRISING AN ELECTROSTATIC SUBSTRATE CARRIER
PCT/FR2012/000530 WO2013093238A1 (en) 2011-12-21 2012-12-19 Support including an electrostatic substrate holder

Publications (1)

Publication Number Publication Date
SG11201403408SA true SG11201403408SA (en) 2014-09-26

Family

ID=47741152

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201403408SA SG11201403408SA (en) 2011-12-21 2012-12-19 Support including an electrostatic substrate holder

Country Status (9)

Country Link
US (1) US11053582B2 (en)
EP (1) EP2795670B1 (en)
JP (1) JP6096803B2 (en)
KR (1) KR102028497B1 (en)
CN (1) CN104011846B (en)
FR (1) FR2985087B1 (en)
SG (1) SG11201403408SA (en)
TW (1) TWI521638B (en)
WO (1) WO2013093238A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2981193B1 (en) * 2011-10-06 2014-05-23 Ion Beam Services METHOD FOR CONTROLLING AN ION IMPLANTER IN PLASMA IMMERSION MODE
FR3017487B1 (en) 2014-02-07 2016-03-18 Ion Beam Services HIGH-VOLTAGE HEATING AND POLARIZED ELECTROSTATIC SUBSTRATE HOLDER

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2106325A (en) * 1981-09-14 1983-04-07 Philips Electronic Associated Electrostatic chuck
JPH0697676B2 (en) * 1985-11-26 1994-11-30 忠弘 大見 Wafer susceptor device
JPH0563063A (en) * 1991-09-02 1993-03-12 Nikon Corp Electrostatic chuck device
JP2817585B2 (en) * 1993-09-10 1998-10-30 住友金属工業株式会社 Sample removal method
JPH07221590A (en) * 1994-01-31 1995-08-18 Matsushita Electric Ind Co Ltd Electronic component and its manufacture
JP2987085B2 (en) * 1995-06-28 1999-12-06 日本碍子株式会社 Semiconductor wafer holding device, method of manufacturing the same, and method of using the same
JPH0982788A (en) * 1995-07-10 1997-03-28 Anelva Corp Electrostatic chuck and manufacture thereof
JPH09129716A (en) * 1995-11-02 1997-05-16 Hitachi Ltd Electrostatic attraction apparatus, manufacture thereof and wafer processing method
US5764471A (en) * 1996-05-08 1998-06-09 Applied Materials, Inc. Method and apparatus for balancing an electrostatic force produced by an electrostatic chuck
US6074488A (en) * 1997-09-16 2000-06-13 Applied Materials, Inc Plasma chamber support having an electrically coupled collar ring
JPH11297804A (en) * 1998-04-10 1999-10-29 Shin Etsu Chem Co Ltd Electrostatic chuck
JP3980187B2 (en) * 1998-07-24 2007-09-26 日本碍子株式会社 Semiconductor holding device, its manufacturing method and its use
JP2000183146A (en) * 1998-12-18 2000-06-30 Ibiden Co Ltd Electrostatic chuck
US6291777B1 (en) * 1999-02-17 2001-09-18 Applied Materials, Inc. Conductive feed-through for creating a surface electrode connection within a dielectric body and method of fabricating same
US20030010292A1 (en) * 2001-07-16 2003-01-16 Applied Materials, Inc. Electrostatic chuck with dielectric coating
US6646233B2 (en) * 2002-03-05 2003-11-11 Hitachi High-Technologies Corporation Wafer stage for wafer processing apparatus and wafer processing method
US7126808B2 (en) 2003-04-01 2006-10-24 Varian Semiconductor Equipment Associates, Inc. Wafer platen equipped with electrostatic clamp, wafer backside gas cooling, and high voltage operation capability for plasma doping
US20050042881A1 (en) * 2003-05-12 2005-02-24 Tokyo Electron Limited Processing apparatus
JP2005260011A (en) * 2004-03-12 2005-09-22 Hitachi High-Technologies Corp Method and device for wafer processing
KR100610010B1 (en) * 2004-07-20 2006-08-08 삼성전자주식회사 Apparatus for
CN101278385B (en) * 2004-11-04 2011-10-12 株式会社爱发科 Electrostatic chuck device
JP2007324260A (en) * 2006-05-31 2007-12-13 Tomoegawa Paper Co Ltd Electrostatic chuck member and apparatus thereof
JP4890421B2 (en) * 2006-10-31 2012-03-07 太平洋セメント株式会社 Electrostatic chuck
JP2010080717A (en) * 2008-09-26 2010-04-08 Tokyo Electron Ltd Placing stand for plasma treatment apparatus

Also Published As

Publication number Publication date
EP2795670B1 (en) 2016-03-09
FR2985087A1 (en) 2013-06-28
CN104011846A (en) 2014-08-27
JP2015504244A (en) 2015-02-05
CN104011846B (en) 2016-10-05
JP6096803B2 (en) 2017-03-15
EP2795670A1 (en) 2014-10-29
KR102028497B1 (en) 2019-10-04
KR20140107373A (en) 2014-09-04
WO2013093238A1 (en) 2013-06-27
US11053582B2 (en) 2021-07-06
TWI521638B (en) 2016-02-11
TW201349382A (en) 2013-12-01
FR2985087B1 (en) 2014-03-07
US20140326176A1 (en) 2014-11-06

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