JPH11297804A - Electrostatic chuck - Google Patents
Electrostatic chuckInfo
- Publication number
- JPH11297804A JPH11297804A JP10098755A JP9875598A JPH11297804A JP H11297804 A JPH11297804 A JP H11297804A JP 10098755 A JP10098755 A JP 10098755A JP 9875598 A JP9875598 A JP 9875598A JP H11297804 A JPH11297804 A JP H11297804A
- Authority
- JP
- Japan
- Prior art keywords
- insulating layer
- wafer
- conductive pattern
- electrostatic chuck
- temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229920002379 silicone rubber Polymers 0.000 claims abstract description 27
- 239000000758 substrate Substances 0.000 claims abstract description 23
- 239000000203 mixture Substances 0.000 claims abstract description 10
- 239000004945 silicone rubber Substances 0.000 claims description 21
- 239000000919 ceramic Substances 0.000 claims description 16
- 238000001816 cooling Methods 0.000 abstract description 29
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract description 12
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract description 7
- 239000010949 copper Substances 0.000 abstract description 7
- 229910052802 copper Inorganic materials 0.000 abstract description 7
- 238000007650 screen-printing Methods 0.000 abstract description 7
- 239000000853 adhesive Substances 0.000 abstract description 5
- 230000001070 adhesive effect Effects 0.000 abstract description 5
- 238000007747 plating Methods 0.000 abstract description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 2
- 230000002093 peripheral effect Effects 0.000 abstract description 2
- 229910052710 silicon Inorganic materials 0.000 abstract description 2
- 239000010703 silicon Substances 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 description 51
- 239000010410 layer Substances 0.000 description 47
- 238000000605 extraction Methods 0.000 description 12
- 239000000843 powder Substances 0.000 description 11
- 238000004519 manufacturing process Methods 0.000 description 10
- 238000000034 method Methods 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 7
- 229910052582 BN Inorganic materials 0.000 description 6
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 238000001723 curing Methods 0.000 description 6
- 238000005468 ion implantation Methods 0.000 description 6
- 230000005855 radiation Effects 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 238000009413 insulation Methods 0.000 description 5
- 239000004944 Liquid Silicone Rubber Substances 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 239000010937 tungsten Substances 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 239000012790 adhesive layer Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 229920001296 polysiloxane Polymers 0.000 description 3
- 238000007639 printing Methods 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 239000013464 silicone adhesive Substances 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 238000007259 addition reaction Methods 0.000 description 2
- 239000000498 cooling water Substances 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- -1 dimethylsiloxane units Chemical group 0.000 description 2
- 239000013013 elastic material Substances 0.000 description 2
- 229920001971 elastomer Polymers 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000009719 polyimide resin Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000005060 rubber Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229920000181 Ethylene propylene rubber Polymers 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 244000043261 Hevea brasiliensis Species 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 229920000800 acrylic rubber Polymers 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000006482 condensation reaction Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- LSXWFXONGKSEMY-UHFFFAOYSA-N di-tert-butyl peroxide Chemical compound CC(C)(C)OOC(C)(C)C LSXWFXONGKSEMY-UHFFFAOYSA-N 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000003063 flame retardant Substances 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229920003052 natural elastomer Polymers 0.000 description 1
- 229920001194 natural rubber Polymers 0.000 description 1
- 238000010943 off-gassing Methods 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 150000002978 peroxides Chemical class 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000000565 sealant Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 229920003048 styrene butadiene rubber Polymers 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Landscapes
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は半導体集積回路の製
造においてシリコンウエハ基板の保持に使用され、特に
そのイオン注入工程で有用な静電チャックに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electrostatic chuck which is used for holding a silicon wafer substrate in the manufacture of a semiconductor integrated circuit, and is particularly useful in an ion implantation process.
【0002】[0002]
【従来の技術】従来より半導体集積回路の製造工程中の
イオン注入工程において静電吸着方式やジョンセン・ラ
ーベック力方式のウエハチャック、いわゆる静電チャッ
クが用いられている。静電チャックの絶縁層としては、
ポリイミド樹脂などのプラスチックス、アルミナ、窒化
アルミなどのセラミックス、シリコーンゴムなどのゴム
弾性体が提案されており全て実用化されている。 一方
イオン注入工程において注入イオンから与えられる熱に
よるウエハの温度上昇を抑えてウエハ温度を均一かつ一
定に保つために静電チャックの裏面に冷却チラーを流す
などの冷却機構を設けて、ウエハを冷却しウエハの温度
を均一且つ一定に保ちマスク材のフォトレジストの熱劣
化を防止する方法が行われている。2. Description of the Related Art Conventionally, in an ion implantation step in a manufacturing process of a semiconductor integrated circuit, a wafer chuck of an electrostatic chuck system or a Johnsen-Rahbek force system, a so-called electrostatic chuck, has been used. As the insulating layer of the electrostatic chuck,
Plastics such as polyimide resin, ceramics such as alumina and aluminum nitride, and rubber elastic bodies such as silicone rubber have been proposed and are all in practical use. On the other hand, in order to keep the wafer temperature uniform and constant by suppressing the temperature rise of the wafer due to the heat given by the implanted ions in the ion implantation process, a cooling mechanism such as flowing a cooling chiller on the back surface of the electrostatic chuck to cool the wafer A method of keeping the temperature of the wafer uniform and constant to prevent thermal degradation of the photoresist of the mask material has been performed.
【0003】[0003]
【発明が解決しようとする課題】絶縁層がセラミックス
製の静電チャックは耐久性に優れ且つ高熱伝導性である
ため多数の実用例があるが、絶縁層が硬いためウエハと
の密着性が悪く接触熱抵抗が大きいので十分な放熱特性
が得られないという問題がある。この問題を解決するた
めに、ウエハと絶縁層の間にヘリウムなどの不活性ガス
を流しウエハと絶縁層の間の熱移動を良好にする方法が
一般に用いられている。しかしこの方法ではガスを流す
ための溝を絶縁層表面に設けるなどの微細加工が必要と
なり、また不活性ガスを流すための設備が必要となるの
で、静電チャックの製造コストが高くなるという問題が
ある。The electrostatic chuck having a ceramic insulating layer has many practical examples because of its excellent durability and high thermal conductivity. However, since the insulating layer is hard, its adhesion to a wafer is poor. There is a problem that sufficient heat radiation characteristics cannot be obtained due to high contact thermal resistance. In order to solve this problem, a method of flowing an inert gas such as helium between the wafer and the insulating layer to improve the heat transfer between the wafer and the insulating layer is generally used. However, this method requires fine processing such as providing a groove for flowing a gas on the surface of the insulating layer, and requires equipment for flowing an inert gas, thereby increasing the manufacturing cost of the electrostatic chuck. There is.
【0004】絶縁層がポリイミド樹脂製の静電チャック
は耐久性は十分とはいえないが、製造が容易であり製造
コストも安いので現在最も広く使用されている。しかし
熱伝導率が低く且つ硬いのでセラミックス製静電チャッ
クと同様にウエハとの密着性が悪く、接触熱抵抗が大き
いので十分な放熱特性が得られないという問題がある。[0004] An electrostatic chuck having an insulating layer made of a polyimide resin is not widely used because it is not durable but easy to manufacture and the manufacturing cost is low. However, since the thermal conductivity is low and hard, the adhesion to the wafer is poor as in the case of the ceramic electrostatic chuck, and there is a problem that sufficient heat radiation characteristics cannot be obtained because of the large contact thermal resistance.
【0005】絶縁層がシリコーンゴム製の静電チャック
は絶縁層が弾性体であることよりウエハとの密着性に優
れ、そのためウエハと絶縁層の間にヘリウムなどの不活
性ガスを流す必要がないという利点がある。従来シリコ
ーンゴムを絶縁層に使用した静電チャックとしては、特
公平2-55175 号公報、特公平2-63307 号公報記載のもの
が提案されているが、これらの発明は基板としてはアル
ミニウムなどの熱伝導性に優れた金属を使用し且つ第1
絶縁層と第2絶縁層の中間に内部電極を設置するもので
ある。静電チャックの内部電極に給電するためには取り
出し電極が必要になるが、基板にアルミニウムなどの金
属を使用した場合には取り出し電極と基板との絶縁性を
確保する必要があり且つ取り出し電極部の構造は複雑な
ものとなり、そのため製造コストが高くなるという問題
があった。本発明者らは先に特開平9-260473号におい
て、金属板上に形成されたセラミックスからなる第1絶
縁層と該絶縁層上に電極として形成された導電性パター
ンと該導電性パターン上に形成された弾性体第2絶縁層
とからなる静電チャックを提案したが、これは放熱性に
は優れているが、絶縁性不良が発生することがあるとい
う問題があった。[0005] An electrostatic chuck in which the insulating layer is made of silicone rubber has excellent adhesion to the wafer because the insulating layer is an elastic body, so that there is no need to flow an inert gas such as helium between the wafer and the insulating layer. There is an advantage. Conventionally, as electrostatic chucks using silicone rubber for the insulating layer, those described in Japanese Patent Publication No. 2-55175 and Japanese Patent Publication No. 2-63307 have been proposed. Use a metal with excellent thermal conductivity
An internal electrode is provided between the insulating layer and the second insulating layer. An extraction electrode is required to supply power to the internal electrode of the electrostatic chuck. However, when a metal such as aluminum is used for the substrate, it is necessary to ensure insulation between the extraction electrode and the substrate and the extraction electrode portion. Has a problem that the structure is complicated and the manufacturing cost is increased. The present inventors have previously disclosed in Japanese Patent Application Laid-Open No. 9-260473, a first insulating layer made of ceramics formed on a metal plate, a conductive pattern formed as an electrode on the insulating layer, and a conductive pattern formed on the conductive pattern. Although an electrostatic chuck including the formed elastic second insulating layer has been proposed, this is excellent in heat dissipation, but has a problem that insulation failure may occur.
【0006】[0006]
【課題を解決するための手段】本発明はこれら従来の諸
問題を一挙に解決するものである。即ち絶縁性セラミッ
クス基板、該基板上に電極として2つの領域に分割され
て形成される導電性パターン及び該導電性パターン上に
設けられる弾性体絶縁層からなることを特徴とする静電
チャックである。The present invention solves these conventional problems at once. That is, an electrostatic chuck comprising an insulating ceramic substrate, a conductive pattern formed by dividing the substrate into two regions as electrodes, and an elastic insulating layer provided on the conductive pattern. .
【0007】[0007]
【発明の実施の形態】以下本発明を詳細に説明する。本
発明において基板に使用される絶縁性セラミックスは、
静電チャックの熱伝導性を高めるために高熱伝導性のも
のが好適である。その熱伝導率は 0.05cal/cm・sec・℃以
上のものが好適であって、このような熱伝導率とするこ
とによりイオンから与えられる熱によるウエハの温度上
昇を抑えてフォトレジストが劣化する温度より低いウエ
ハ温度に保つことができる。熱伝導率が0.05cal/cm・sec
・ ℃未満ではウエハの冷却効率が低下し、ウエハ温度が
上昇し一定温度に制御できなくなり、フォトレジストの
劣化を招き、集積回路の歩留まりが悪化することがあ
る。本発明における絶縁性セラミックスとしては窒化ア
ルミ、アルミナ、窒化ホウ素、窒化ケイ素などが好適で
ある。本発明における絶縁性セラミックスの厚さは0.1
〜100mm とすることが好ましく 0.1mm未満では絶縁耐圧
が不足し静電チャックが絶縁破壊を起こし易く半導体デ
バイスの歩留まりが悪化することがある。また100mm を
超えると放熱性が低下するため、ウエハの冷却効率が悪
くなり半導体デバイスの歩留まりがやはり悪化すること
がある。DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below in detail. Insulating ceramics used for the substrate in the present invention,
In order to increase the thermal conductivity of the electrostatic chuck, those having high thermal conductivity are preferable. It is preferable that the thermal conductivity is 0.05 cal / cm · sec · ° C. or more, and by setting such thermal conductivity, the temperature rise of the wafer due to the heat given by the ions is suppressed and the photoresist is deteriorated. The wafer temperature can be kept lower than the temperature. Thermal conductivity 0.05 cal / cm ・ sec
If the temperature is lower than ℃, the cooling efficiency of the wafer decreases, the temperature of the wafer increases, and it becomes impossible to control the temperature to a constant temperature. As the insulating ceramic in the present invention, aluminum nitride, alumina, boron nitride, silicon nitride and the like are suitable. The thickness of the insulating ceramic in the present invention is 0.1
If the thickness is less than 0.1 mm, the withstand voltage is insufficient, and the electrostatic chuck is liable to cause dielectric breakdown, which may deteriorate the yield of semiconductor devices. On the other hand, if the thickness exceeds 100 mm, the heat radiation property is reduced, so that the cooling efficiency of the wafer is deteriorated and the yield of semiconductor devices may be deteriorated.
【0008】本発明における導電性パターンは静電チャ
ックのウエハ吸着のための電極として作用するものであ
るが、その材質としては銅、アルミニウム、ニッケル、
銀、タングステンなどの金属系の導電体及び窒化チタン
などのセラミックス系の導電体、導電性シリコーンゴム
や導電性エポキシ樹脂などの樹脂系導電体が用いられ、
その厚さは1〜 100μmが好適であり、より好ましくは
5〜50μmである。1μm未満では導電性パターンの機
械的強度が低下し信頼性が低下する。 100μmを超えて
も導電性パターンの機械的強度や電気的性能が向上する
わけではなく、材料コストが上昇する。また導電性パタ
ーンの形状は単極型(一般的には正極となる)と双極型
との2種に大別されるが、本発明では特に双極型(正極
と負極を均等に印加する)がスループットが早くなるこ
とから好ましい。通常双極型のスループットは10秒/枚
だが単極型は60秒/枚かかる。本発明における導電性パ
ターンの1例を図1に示す(実施例参照)。In the present invention, the conductive pattern functions as an electrode for attracting a wafer to the electrostatic chuck. The conductive pattern may be made of copper, aluminum, nickel,
Silver, metal-based conductors such as tungsten and ceramics-based conductors such as titanium nitride, resin-based conductors such as conductive silicone rubber and conductive epoxy resin are used,
The thickness is preferably from 1 to 100 μm, and more preferably from 5 to 50 μm. If it is less than 1 μm, the mechanical strength of the conductive pattern is reduced, and the reliability is reduced. Even if the thickness exceeds 100 μm, the mechanical strength and the electrical performance of the conductive pattern are not improved, and the material cost increases. The shape of the conductive pattern is roughly classified into two types, a monopolar type (generally a positive electrode) and a bipolar type. In the present invention, the bipolar type (a positive electrode and a negative electrode are uniformly applied) is particularly preferred. This is preferable because the throughput becomes faster. Usually, the throughput of the bipolar type is 10 seconds / sheet, while the throughput of the monopolar type is 60 seconds / sheet. One example of the conductive pattern according to the present invention is shown in FIG. 1 (see Example).
【0009】本発明の請求項1の発明における弾性体絶
縁層としては、高熱伝導性の弾性体が用いられるが、こ
れらには例えばシリコーンゴム、エチレンプロピレンゴ
ム、フッ素ゴム、アクリルゴム、スチレンブタジエンゴ
ム、天然ゴムなどがある。これらの弾性体の中ではシリ
コーンゴム組成物の硬化物(シリコーンゴム)が導電性
の不純物やアウトガス成分が少ないので、半導体集積回
路の製造工程で使用するのに最適である。ここで弾性体
絶縁層の熱伝導率は 0.001cal/cm・sec・ ℃以上、特に
0.0015cal/cm・sec・℃以上であると、イオンから供給さ
れる熱によるウエハ温度上昇を抑えて、ウエハ温度をフ
ォトレジストの劣化温度より低く(一般的には 100℃未
満)保つことができるので好ましい。またウエハと絶縁
層との密着性をよくして、接触熱抵抗を低下させるため
には、ウエハに働く静電吸着力により弾性体絶縁層の表
面形状がウエハ裏面形状に容易に追従するよう変形させ
得ることが好ましい。そのためには本発明における弾性
体絶縁層の硬度を30°〜90°、特に40°〜85°(JIS
−AZ)とすることが好ましい。硬度が30°未満では、
弾性体絶縁層の表面とウエハ裏面との密着性が高くなり
過ぎ、プラズマエッチング処理終了後にウエハを静電チ
ャックから剥離させることが困難となることがある。ま
た90°を超えると吸着力による弾性体絶縁層の変形が少
なくなり、弾性体絶縁層のウエハ裏面への追従性が低下
し、接触熱抵抗が大きくなることがある。As the elastic insulating layer in the first aspect of the present invention, an elastic material having a high thermal conductivity is used. Examples of the elastic material include silicone rubber, ethylene propylene rubber, fluorine rubber, acrylic rubber, and styrene butadiene rubber. , Natural rubber and the like. Among these elastic bodies, a cured product of the silicone rubber composition (silicone rubber) has a small amount of conductive impurities and outgassing components, and is therefore most suitable for use in a semiconductor integrated circuit manufacturing process. Here, the thermal conductivity of the elastic insulating layer is 0.001 cal / cm
When the temperature is 0.0015 cal / cm · sec · ° C or higher, the wafer temperature can be kept lower than the photoresist deterioration temperature (generally less than 100 ° C) by suppressing the wafer temperature rise due to the heat supplied from the ions. It is preferred. In addition, in order to improve the adhesion between the wafer and the insulating layer and reduce the contact thermal resistance, the surface shape of the elastic insulating layer is deformed so that the surface shape of the elastic insulating layer easily follows the back surface shape of the wafer by the electrostatic attraction force acting on the wafer. It is preferable to be able to. For this purpose, the hardness of the elastic insulating layer in the present invention is set to 30 ° to 90 °, particularly 40 ° to 85 ° (JIS).
-AZ) is preferable. If the hardness is less than 30 °,
The adhesion between the front surface of the elastic insulating layer and the back surface of the wafer may be too high, and it may be difficult to peel the wafer from the electrostatic chuck after the plasma etching process. On the other hand, if the angle exceeds 90 °, the deformation of the elastic insulating layer due to the attraction force is reduced, the ability of the elastic insulating layer to follow the rear surface of the wafer is reduced, and the contact thermal resistance may be increased.
【0010】本発明における弾性体絶縁層の厚さは放熱
性を良好にするため、できるだけ薄い方が有利であり、
50〜 1,000μmの範囲のものが好適である。50μm未満
では絶縁破壊電圧が低下するため静電チャックが絶縁破
壊を起こし易く、半導体デバイスの歩留まりが悪くなる
ことがある。また 1,000μmを超えると放熱性が低下す
るため、ウエハの冷却効率が悪くなり、集積回路の歩留
まりが悪くなることがある。また弾性体絶縁層表面の平
坦度及び表面粗さはウエハとの密着性に影響し、ウエハ
と絶縁層表面の接触熱抵抗に影響を与えるため、平坦度
は50μm以下とすることがウエハとの密着性を良くする
上で好適である。50μmを超えるとウエハとの密着性が
低下し、放熱性が低下するため、ウエハの冷却効率が悪
くなり集積回路の歩留まりが悪くなることがある。表面
粗さ(Ra )は10μm以下とすることがウエハとの密着
性を良くするうえで好適である。10μmを超えると放熱
性が低下するため、ウエハの冷却効率が悪くなり集積回
路の歩留まりが悪くなることがある。The thickness of the elastic insulating layer in the present invention is preferably as thin as possible in order to improve heat dissipation.
Those having a range of 50 to 1,000 μm are preferred. If the thickness is less than 50 μm, the dielectric breakdown voltage is reduced, so that the electrostatic chuck is likely to cause dielectric breakdown, and the yield of semiconductor devices may be deteriorated. On the other hand, if the thickness exceeds 1,000 μm, the heat radiation property is reduced, so that the cooling efficiency of the wafer is deteriorated and the yield of the integrated circuit may be deteriorated. Also, the flatness and surface roughness of the elastic insulating layer surface affect the adhesion to the wafer and the contact thermal resistance between the wafer and the insulating layer surface. It is suitable for improving the adhesion. If it exceeds 50 μm, the adhesiveness to the wafer will be reduced, and the heat radiation will be reduced, so that the cooling efficiency of the wafer will be reduced and the yield of the integrated circuit may be reduced. The surface roughness (Ra) is preferably set to 10 μm or less in order to improve the adhesion to the wafer. When the thickness exceeds 10 μm, the heat radiation property is reduced, so that the cooling efficiency of the wafer is deteriorated and the yield of the integrated circuit may be deteriorated.
【0011】本発明の請求項3の発明における弾性体絶
縁層を形成するシリコーンゴム組成物の性状としてはミ
ラブルタイプ、液状タイプの何れのものも使用可能であ
り、硬化方法としては過酸化物触媒による硬化、付加反
応硬化、縮合反応硬化、紫外線硬化などの各種硬化方法
が使用できる。本発明の請求項3の発明における弾性体
絶縁層を形成するシリコーンゴム組成物においてはこれ
に高熱伝導性を付与するためにフィラーとして、アルミ
ナ粉、窒化アルミ粉、窒化ホウ素粉、窒化珪素粉、酸化
マグネシウム粉、シリカ粉などの高熱伝導性セラミック
ス粉を添加する。上記フィラーの配合量は弾性体絶縁層
に 0.001cal/cm・sec・ ℃以上の熱伝導性を付与するのに
必要な量であり、熱伝導率が 0.001cal/cm・sec・ ℃未満
ではウエハの冷却効率が低下し、ウエハ温度が上昇し一
定温度に制御できなくなり、集積回路の歩留まりが悪く
なることがある。According to the third aspect of the present invention, the silicone rubber composition for forming the elastic insulating layer may be of a millable type or a liquid type, and the curing method may be a peroxide catalyst. And various curing methods such as curing by addition reaction, addition reaction curing, condensation reaction curing, and ultraviolet curing. In the silicone rubber composition forming the elastic insulating layer according to the invention of claim 3 of the present invention, alumina powder, aluminum nitride powder, boron nitride powder, silicon nitride powder, High thermal conductive ceramic powder such as magnesium oxide powder and silica powder is added. The amount of the filler is the amount necessary to give the thermal insulation of 0.001 cal / cm-sec- ° C or more to the elastic insulating layer. If the thermal conductivity is less than 0.001 cal / cm-sec- ° C, the Cooling efficiency decreases, the wafer temperature rises, and it becomes impossible to control the temperature to a constant temperature, and the yield of integrated circuits may deteriorate.
【0012】本発明の請求項3の発明における弾性体絶
縁層はウエハと直接接触するため、弾性体絶縁層を形成
するシリコーンゴム組成物中の絶縁性に影響を与える不
純物含有量はできるだけ少なくすることが好ましく、ア
ルカリ金属、アルカリ土類金属、鉄、ニッケル、銅、ク
ロムなどの重金属含有量も少なくすることが好ましい。
またシリコーンゴム組成物の硬化物の強度及び硬度を調
整するための各種充填材や着色剤、難燃性付与剤を配合
することは任意である。Since the elastic insulating layer according to the third aspect of the present invention is in direct contact with the wafer, the content of impurities in the silicone rubber composition forming the elastic insulating layer which affects the insulating property is minimized. It is preferable to reduce the content of heavy metals such as alkali metals, alkaline earth metals, iron, nickel, copper, and chromium.
It is optional to add various fillers, coloring agents, and flame retardants for adjusting the strength and hardness of the cured product of the silicone rubber composition.
【0013】本発明において絶縁性セラミックス基板上
への導電性パターンの形成方法は導電性ペーストの印
刷、メッキなどの方法または導電性金属フィルムの接着
などによる。更に弾性体絶縁層へ直接電極を形成しても
よく、その場合にはカーボンや金属を配合した導電性液
状シリコーンゴム組成物をスクリーン印刷などにより絶
縁層に印刷した後、導電性液状シリコーンゴム組成物を
硬化させる。また取出し電極は導電性パターンに電圧を
印加するために電源への接続用として用いられるもので
あるが、これはセラミックス基板に開けたスルーホール
内部の金属メッキや金属ピンの挿入と半田付けの組み合
わせなどの方法により導電性パターンに接合すれば良
い。In the present invention, the conductive pattern is formed on the insulating ceramic substrate by a method such as printing or plating a conductive paste or by bonding a conductive metal film. Further, an electrode may be directly formed on the elastic insulating layer. In this case, a conductive liquid silicone rubber composition containing carbon or metal is printed on the insulating layer by screen printing or the like, and then the conductive liquid silicone rubber composition is formed. Allow the object to cure. The extraction electrode is used to connect to a power supply to apply a voltage to the conductive pattern. This is a combination of metal plating inside the through hole opened in the ceramic substrate and insertion of metal pins and soldering. What is necessary is just to join to a conductive pattern by methods, such as.
【0014】[0014]
【実施例】以下実施例により本発明を更に詳細に説明す
るが、本発明はこれに限定されない。 (シリコーンゴムシート1〜4)下記A〜Fの原材料を
表1に示すような比率で配合したシリコーンゴム組成物
1〜4をプレス成形圧力5kg/cm2、温度 170℃、30分の
条件でプレス成形を行い絶縁層用シリコーンゴムシート
1〜4を作製した。 A:ジメチルシロキサン単位 99.85モル%、メチルビニ
ルシロキサン単位0.15モル%から成る平均重合度 8,000
のメチルビニルポリシロキサン[信越化学工業(株)
製] B:ジ−t−ブチルパーオキサイド[日本油脂(株)
製] C:アルミナ粉・AL24[昭和電工(株)製商品名] D:窒化アルミ粉・XUS−35548 [ダウケミカル製商
品名] E:窒化ホウ素粉・KBN−(h)10[信越化学工業
(株)製商品名] F:シリカ粉・クリスタライト[(株)龍森製商品名]EXAMPLES The present invention will be described in more detail with reference to the following Examples, but it should not be construed that the present invention is limited thereto. (Silicone rubber sheets 1 to 4) Silicone rubber compositions 1 to 4 in which the following raw materials A to F were blended at the ratios shown in Table 1 were pressed under a pressure of 5 kg / cm 2 , a temperature of 170 ° C., and 30 minutes. Press molding was performed to produce silicone rubber sheets 1 to 4 for an insulating layer. A: An average degree of polymerization of 99.85 mol% of dimethylsiloxane units and 0.15 mol% of methylvinylsiloxane units 8,000
Methylvinylpolysiloxane [Shin-Etsu Chemical Co., Ltd.
B: di-t-butyl peroxide [Nippon Yushi Co., Ltd.
C: Alumina powder / AL24 [trade name of Showa Denko KK] D: Aluminum nitride powder / XUS-35548 [Dow Chemical product name] E: Boron nitride powder / KBN- (h) 10 [Shin-Etsu Chemical Co., Ltd.] F: Silica powder / crystallite [Trade name of Tatsumori Co., Ltd.]
【0015】[0015]
【表1】 [Table 1]
【0016】(実施例1)取り出し電極用にスルーホー
ルを開けてある絶縁性アルミナ基板上に膜厚20μmの銅
メッキをした図1に示す導電性パターン及び取出し電極
をスルーホールの内周面に形成し、弾性体絶縁層(アル
ミナ含有シリコーンゴムシート1)にスクリーン印刷で
シリコーン系接着剤(KE1801)を膜厚25μmとなるよ
う塗布し、これとアルミナ基板の銅メッキした導電性パ
ターン側とを貼り合わせ、圧力0.1kgf/cm2、温度 120
℃、 10 分の条件でプレス接着した。完成した静電チャ
ックを図2の(1) に示す。次に図5に示す冷却性能試験
器8に得られた静電チャック9を装着し静電チャックの
冷却性能を測定した。即ち0.01Torrの減圧下のチャンバ
ー内で静電チャックにDC± 0.5KVを電源14より供給
し、ウエハ10を静電チャック9に静電吸着固定し、ヒー
ター11によりウエハ10を 150℃に加熱したのち4℃の冷
却水を管13中に循環させ、ウエハ10の温度が平衡状態に
なったときの温度を表面温度計12で測定した。その結果
を表2に示すが、ウエハ温度は55℃に冷却され、実施例
1で得られた静電チャックは冷却性能に優れていること
が確認された。Example 1 A 20 μm-thick copper-plated conductive pattern and an extraction electrode shown in FIG. 1 were placed on the inner peripheral surface of a through-hole on an insulating alumina substrate having a through-hole for an extraction electrode. A silicone adhesive (KE1801) is applied to the elastic insulating layer (alumina-containing silicone rubber sheet 1) by screen printing so as to have a film thickness of 25 μm, and this is adhered to the copper-plated conductive pattern side of the alumina substrate. bonding, pressure 0.1 kgf / cm 2, temperature 120
Press bonding was performed at 10 ° C. for 10 minutes. The completed electrostatic chuck is shown in FIG. Next, the obtained electrostatic chuck 9 was attached to the cooling performance tester 8 shown in FIG. 5, and the cooling performance of the electrostatic chuck was measured. That is, in a chamber under a reduced pressure of 0.01 Torr, DC ± 0.5 KV was supplied to the electrostatic chuck from the power supply 14, the wafer 10 was electrostatically attracted and fixed to the electrostatic chuck 9, and the wafer 10 was heated to 150 ° C. by the heater 11. Thereafter, cooling water of 4 ° C. was circulated through the tube 13, and the temperature when the temperature of the wafer 10 became equilibrium was measured by the surface thermometer 12. The results are shown in Table 2. The wafer temperature was cooled to 55 ° C., and it was confirmed that the electrostatic chuck obtained in Example 1 had excellent cooling performance.
【0017】(実施例2)予め取出し電極として白金製
のピンを埋め込んだ絶縁性窒化アルミ基板に図2の(1)
に示す導電性印刷用銀ペーストをスクリーン印刷で膜厚
10μmになるよう塗布した[図2の(1) 3aに相当す
る]後に還元雰囲気中、炉内温度 800℃、3時間の条件
で焼き付けして導電性パターンを形成した。次に絶縁層
(窒化アルミ含有シリコーンゴムシート2)にスクリー
ン印刷でシリコーン系接着剤KE44を膜厚20μm[図2
の(1) の2に相当する]となるよう塗布し、絶縁性窒化
アルミ基板の銀導電性パターン側と張り合わせ、圧力0.
1kgf/cm2、温度20℃、48時間の条件でプレス接着した。
得られた図2の(1) で示される静電チャックについて実
施例1と同様に冷却性能を確認したところウエハ温度は
50℃であり、冷却性能に優れていることが確認された。(Example 2) FIG. 2 (1) shows an insulating aluminum nitride substrate in which platinum pins are embedded as extraction electrodes in advance.
Film thickness of the conductive printing silver paste shown in
After coating to a thickness of 10 μm (corresponding to (1) 3a in FIG. 2), baking was performed in a reducing atmosphere at a furnace temperature of 800 ° C. for 3 hours to form a conductive pattern. Next, a silicone adhesive KE44 having a film thickness of 20 μm was screen-printed on the insulating layer (aluminum nitride-containing silicone rubber sheet 2) [FIG.
(1) 2), and bonded to the silver conductive pattern side of the insulating aluminum nitride substrate.
Press bonding was performed under the conditions of 1 kgf / cm 2 , a temperature of 20 ° C. and 48 hours.
The cooling performance of the obtained electrostatic chuck shown in (1) of FIG. 2 was confirmed in the same manner as in Example 1.
It was 50 ° C, and it was confirmed that the cooling performance was excellent.
【0018】(実施例3)予め取り出し電極としてタン
グステン製のピンを埋め込んだ絶縁性窒化ホウ素基板に
図2の(1) に示す導電性印刷用タングステンペーストを
スクリーン印刷で膜厚15μmになるよう塗布した後に炉
内温度 1,000℃、3時間の条件で焼き付けして導電性パ
ターンを形成した。次に絶縁層(窒化ホウ素含有シリコ
ーンゴムシート3)にスクリーン印刷でシリコーン系接
着剤(KE1801)を膜厚20μmとなるよう塗布し、窒化
ホウ素基板のタングステンパターン側と張り合わせ、圧
力0.1kgf/cm2、温度 120℃、 10 分の条件でプレス接着
した。得られた図2の(1) に示される静電チャックにつ
いて実施例1と同様に冷却性能を確認したところウエハ
温度は40℃であり、冷却性能に優れていることが確認さ
れた。Example 3 A conductive printing tungsten paste shown in (1) of FIG. 2 was applied by screen printing to a thickness of 15 μm on an insulating boron nitride substrate in which tungsten pins were embedded as extraction electrodes in advance. After that, baking was performed at a furnace temperature of 1,000 ° C. for 3 hours to form a conductive pattern. Next, a silicone-based adhesive (KE1801) is applied to the insulating layer (boron nitride-containing silicone rubber sheet 3) by screen printing so as to have a thickness of 20 μm, and is adhered to the tungsten pattern side of the boron nitride substrate, and the pressure is 0.1 kgf / cm 2. Press bonding was performed at a temperature of 120 ° C. for 10 minutes. When the cooling performance of the obtained electrostatic chuck shown in FIG. 2A was confirmed in the same manner as in Example 1, the wafer temperature was 40 ° C., and it was confirmed that the cooling performance was excellent.
【0019】(実施例4)上部絶縁層(シリカ含有シリ
コーンゴムシート4)にスクリーン印刷で導電性液状シ
リコーンゴム接着剤(KE3491)を膜厚20μmとなるよ
う塗布し大気中、室温で48時間放置し該接着剤を硬化さ
せ図1に示す導電性パターンを形成した。次に予め取り
出し電極として銅製のピンを埋め込んだアルミナ基板に
スクリーン印刷でシリコーン系接着剤(KE44)を銅製
のピンにかかることなく膜厚20μmとなるよう塗布し、
次に導電性液状シリコーンゴム接着剤(KE3491)を銅
製ピン上に塗布した後に導電性パターンが形成された絶
縁層の導電性パターン側と貼り合わせ、圧力0.1kgf/c
m2、温度25℃、48時間の条件でプレス接着した。得られ
た(図2)の(1) に示される静電チャックをについて実
施例1と同様に冷却性能を確認したところウエハ温度は
65℃であり冷却性能に優れることが確認された。実施例
1〜4で得られた静電チャックをイオン注入装置に実装
し、イオン注入エネルギー200 KV、ビーム電流 1,000
μA、イオン注入ドーズ量2×1015ions/cm2、ウエハ1
枚あたりの処理時間 250秒という条件でシリコーンウエ
ハ20万枚を処理したが、ウエハの温度上昇、温度分布の
バラツキは確認されず、レジストの劣化などの不都合も
発生しなかった。(Example 4) A conductive liquid silicone rubber adhesive (KE3491) is applied to the upper insulating layer (silica-containing silicone rubber sheet 4) by screen printing so as to have a film thickness of 20 μm, and left at room temperature in the air for 48 hours. Then, the adhesive was cured to form a conductive pattern shown in FIG. Next, a silicone adhesive (KE44) is applied by screen printing to an alumina substrate in which copper pins are embedded as extraction electrodes in advance so as to have a thickness of 20 μm without covering the copper pins.
Next, a conductive liquid silicone rubber adhesive (KE3491) is applied onto the copper pins, and then bonded to the conductive pattern side of the insulating layer on which the conductive pattern is formed, at a pressure of 0.1 kgf / c.
Press bonding was performed under the conditions of m 2 , temperature of 25 ° C. and 48 hours. The cooling performance of the obtained electrostatic chuck shown in (1) of FIG. 2 was confirmed in the same manner as in Example 1.
It was 65 ° C, and it was confirmed that the cooling performance was excellent. The electrostatic chucks obtained in Examples 1 to 4 were mounted on an ion implantation apparatus, and the ion implantation energy was 200 KV and the beam current was 1,000.
μA, ion implantation dose 2 × 10 15 ions / cm 2 , wafer 1
200,000 silicone wafers were processed under the condition that the processing time per wafer was 250 seconds. However, no increase in the temperature of the wafer and no variation in the temperature distribution were observed, and no inconvenience such as deterioration of the resist occurred.
【0020】[0020]
【表2】 [Table 2]
【0021】(比較例1)図1に示される形状の導電性
パターンを用い、表3に示す構成で図3に示すようなポ
リイミド製静電チャックを作製し、実施例1と同様の方
法で冷却性能を試験した結果、ウエハ温度 120℃と冷却
性能が悪いことが確認された。 (比較例2)図1に示される形状の導電性パターンを用
い、表3に示す構成で図3に示すような導電性パターン
内蔵の一体成形アルミナ製静電チャックを作製し、実施
例1と同様の方法で冷却性能を試験した結果、ウエハ温
度 110℃と冷却性能が悪いことが確認された。 (比較例3)図1に示される形状の導電性パターンを用
い、表3に示す構成で図3に示すような導電性パターン
内蔵の一体成形シリコーンゴム製静電チャックを作製
し、実施例1と同様の方法で冷却性能を試験した結果、
ウエハ温度60℃と冷却性能は良いことが確認されたが、
構造が複雑であるため静電チャックの製造歩留まりは50
%と実施例1〜4の 100%に比較して悪かった。歩留ま
りの低下原因はリード線間、及びアルミ基板とリード線
間の絶縁性が不良であるためだった。 (比較例4)図1に示される形状の導電性パターンを用
い、表3に示す構成で静電チャックを作製した。実施例
1と同様の方法で冷却性能を試験した結果、ウエハ温度
50℃と冷却性能は良いことが確認されたが、絶縁不良が
多く静電チャックの製造歩留まりは60%と実施例1〜4
の 100%に比較して悪かった。Comparative Example 1 Using a conductive pattern having the shape shown in FIG. 1, a polyimide electrostatic chuck as shown in FIG. As a result of the cooling performance test, it was confirmed that the cooling performance was poor at a wafer temperature of 120 ° C. (Comparative Example 2) Using the conductive pattern having the shape shown in FIG. 1, an integrally formed alumina electrostatic chuck having a built-in conductive pattern as shown in FIG. As a result of testing the cooling performance by the same method, it was confirmed that the cooling performance was poor at a wafer temperature of 110 ° C. (Comparative Example 3) Using a conductive pattern having the shape shown in FIG. 1, an electrostatic chuck made of integrally molded silicone rubber having a conductive pattern built therein as shown in FIG. As a result of testing the cooling performance in the same way as
It was confirmed that the cooling performance was good at a wafer temperature of 60 ° C,
Manufacturing yield of electrostatic chuck is 50 due to complex structure
% And 100% of Examples 1-4. The cause of the decrease in yield was poor insulation between the lead wires and between the aluminum substrate and the lead wires. (Comparative Example 4) An electrostatic chuck having the structure shown in Table 3 was manufactured using the conductive pattern having the shape shown in FIG. As a result of testing the cooling performance in the same manner as in Example 1, the wafer temperature
Although the cooling performance was confirmed to be good at 50 ° C., there were many defective insulations, and the manufacturing yield of the electrostatic chuck was 60%.
Was bad compared to 100%.
【0022】[0022]
【表3】 [Table 3]
【0023】[0023]
【発明の効果】本発明の静電チャックの構造は、基板の
絶縁性セラミックスの上に直接内部電極を敷設でき、従
来の静電チャックのように給電用取出し電極を絶縁封止
する必要がなく極めて単純であるので製造コストを低下
させることができ、信頼性を大幅に高めることができ
る。またウエハに接触する絶縁層に弾性体のシリコーン
ゴムを使用することにより、絶縁層とウエハとの密着性
が改善され、接触熱抵抗を低下させることができ、これ
により冷却性能も大幅に向上させることができる。According to the structure of the electrostatic chuck of the present invention, the internal electrodes can be laid directly on the insulating ceramics of the substrate, and it is not necessary to insulate and seal the power supply lead-out electrodes unlike the conventional electrostatic chuck. Since it is extremely simple, manufacturing costs can be reduced and reliability can be greatly increased. In addition, by using an elastic silicone rubber for the insulating layer in contact with the wafer, the adhesion between the insulating layer and the wafer is improved, the contact thermal resistance can be reduced, and the cooling performance can be greatly improved. be able to.
【図1】本発明における導電性パターンの1例の略図で
ある。FIG. 1 is a schematic view of an example of a conductive pattern according to the present invention.
【図2】1)実施例で得られた本発明の静電チャックの
全体略図である。 2)実施例1で得られた本発明の静電チャックの取り出
し電極部の拡大図である。 3)実施例2,3で得られた本発明の静電チャックの取
り出し電極部の拡大図である。FIG. 2 is an overall schematic view of the electrostatic chuck of the present invention obtained in 1) Example. 2) It is an enlarged view of an extraction electrode portion of the electrostatic chuck of the present invention obtained in Example 1. 3) It is an enlarged view of an extraction electrode portion of the electrostatic chuck of the present invention obtained in Examples 2 and 3.
【図3】従来の静電チャックの全体略図である。FIG. 3 is an overall schematic view of a conventional electrostatic chuck.
【図4】本発明の静電チャックの冷却性能の測定方法を
示す概略図である。FIG. 4 is a schematic view showing a method for measuring the cooling performance of the electrostatic chuck according to the present invention.
1 (上部)絶縁層 2 接着剤層 3a 内部電極 3b 取出し電極 4 絶縁性セラミックス 8 冷却性能測定器 9 静電チャック 10 ウエハ 11 ヒーター 12 表面温度計 13 冷却水管 14 電源 31 第2絶縁層 32 接着剤層 33 第1絶縁層 34 接着剤層 35 金属基板 36 導電性パターン 37 リード線 38 封止剤 Reference Signs List 1 (upper) insulating layer 2 adhesive layer 3a internal electrode 3b extraction electrode 4 insulating ceramic 8 cooling performance measuring instrument 9 electrostatic chuck 10 wafer 11 heater 12 surface thermometer 13 cooling water pipe 14 power supply 31 second insulating layer 32 adhesive Layer 33 First insulating layer 34 Adhesive layer 35 Metal substrate 36 Conductive pattern 37 Lead wire 38 Sealant
フロントページの続き (72)発明者 半田 隆一 群馬県碓氷郡松井田町大字人見1番地10 信越化学工業株式会社シリコーン電子材料 技術研究所内Continued on the front page (72) Inventor Ryuichi Handa 1-10 Hitomi, Matsuida-cho, Usui-gun, Gunma Prefecture Inside Silicone Electronic Materials Research Laboratory, Shin-Etsu Chemical Co., Ltd.
Claims (4)
極として2つの領域に分割されて形成された導電性パタ
ーン及び該導電性パターン上に設けられた弾性体絶縁層
からなることを特徴とする静電チャック。1. An insulating ceramic substrate, comprising: a conductive pattern divided into two regions as electrodes on the substrate; and an elastic insulating layer provided on the conductive pattern. Electrostatic chuck.
0.05cal/cm・sec・℃以上であることを特徴とする請求項
1記載の静電チャック。2. The thermal conductivity of the insulating ceramic substrate is
2. The electrostatic chuck according to claim 1, wherein the temperature is 0.05 cal / cm.sec..degree.
硬化物であることを特徴とする請求項1または2記載の
静電チャック。3. The electrostatic chuck according to claim 1, wherein the elastic insulating layer is a cured product of a silicone rubber composition.
・sec・ ℃以上であり、硬度が30°〜90°であることを特
徴とする請求項1〜3のいずれかに記載の静電チャッ
ク。4. The thermal conductivity of the elastic insulating layer is 0.001 cal / cm.
The electrostatic chuck according to any one of claims 1 to 3, wherein the electrostatic chuck has a hardness of 30 ° C or more and a hardness of 30 ° to 90 °.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10098755A JPH11297804A (en) | 1998-04-10 | 1998-04-10 | Electrostatic chuck |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10098755A JPH11297804A (en) | 1998-04-10 | 1998-04-10 | Electrostatic chuck |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH11297804A true JPH11297804A (en) | 1999-10-29 |
Family
ID=14228268
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10098755A Pending JPH11297804A (en) | 1998-04-10 | 1998-04-10 | Electrostatic chuck |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH11297804A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20030055662A (en) * | 2001-12-27 | 2003-07-04 | 삼성전자주식회사 | Electrostatic chuck |
CN1299345C (en) * | 2001-12-04 | 2007-02-07 | 东陶机器株式会社 | Electrostatic clampless holder module and cooling system |
JP2008277446A (en) * | 2007-04-26 | 2008-11-13 | Shin Etsu Chem Co Ltd | Electrostatic chuck |
JP2015504244A (en) * | 2011-12-21 | 2015-02-05 | イオン ビーム サービス | Support device including electrostatic substrate holder |
-
1998
- 1998-04-10 JP JP10098755A patent/JPH11297804A/en active Pending
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1299345C (en) * | 2001-12-04 | 2007-02-07 | 东陶机器株式会社 | Electrostatic clampless holder module and cooling system |
KR20030055662A (en) * | 2001-12-27 | 2003-07-04 | 삼성전자주식회사 | Electrostatic chuck |
JP2008277446A (en) * | 2007-04-26 | 2008-11-13 | Shin Etsu Chem Co Ltd | Electrostatic chuck |
US7940512B2 (en) | 2007-04-26 | 2011-05-10 | Shin-Etsu Chemical Co., Ltd. | Electrostatic chuck |
JP2015504244A (en) * | 2011-12-21 | 2015-02-05 | イオン ビーム サービス | Support device including electrostatic substrate holder |
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