JP2016516284A - 高生産性イオン注入装置 - Google Patents
高生産性イオン注入装置 Download PDFInfo
- Publication number
- JP2016516284A JP2016516284A JP2016507022A JP2016507022A JP2016516284A JP 2016516284 A JP2016516284 A JP 2016516284A JP 2016507022 A JP2016507022 A JP 2016507022A JP 2016507022 A JP2016507022 A JP 2016507022A JP 2016516284 A JP2016516284 A JP 2016516284A
- Authority
- JP
- Japan
- Prior art keywords
- substrate holder
- ion implantation
- implantation apparatus
- container
- plates
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/48—Ion implantation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/08—Ion sources; Ion guns
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/20—Means for supporting or positioning the objects or the material; Means for adjusting diaphragms or lenses associated with the support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32412—Plasma immersion ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32541—Shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32568—Relative arrangement or disposition of electrodes; moving means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Analytical Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Plasma Technology (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
ポンプ装置に接続された容器と、
プラズマ源と、
バイアス電源と、
該容器につながるガス吸気口と、
該バイアス電源の負極に接続され、該容器内に配置された基板保持具と、を備え、
該基板保持具は、少なくとも二枚の平行な板から構成され、
基準電極は、少なくとも一枚のストリップから構成され、該基準電極は、該バイアス電源の正極に接続され、
該ストリップは、該二枚の板の間に挿入されている。
基板保持具20、及び
クランプ用フランジ30
である。
アノード−基板キャパシタ、及び
基板−カソードキャパシタ
を備えることである。
基板保持具及びアースに接続された負極と、基準電極に接続された正極とを有する高電圧電源
基板保持具に接続された負極と、基準電極に接続された正極とを有し、両極のいずれもがアースに接続されていない高電圧電源
高電圧電源はDCであってもパルス化されていてもよい。数百キロヘルツ(kHz)の範囲の高い周波数でバイアスすることも想定することができる。
Claims (12)
- ポンプ装置(102,303)に接続された容器(101,301,401)と、
プラズマ源(115−121−122,304−320,330−340,405−406)と、
バイアス電源(113,327)と、
該容器につながるガス吸気口(117,302,402)と、
該バイアス電源の負極に接続され、該容器内に配置された基板保持具(104,304)と、を備え、
該基板保持具(104,304)は、少なくとも二枚の平行な板(105−106,305−306−307−308−309)から構成され、
基準電極は、少なくとも一枚のストリップ(110,321−322−323−324)から構成され、該基準電極は、該バイアス電源の正極に接続され、
該ストリップは、該二枚の板の間に挿入されているイオン注入装置(100)。 - 該基板保持具(304)は、三枚以上の板を有し、これらの板(305,306,307,308,309)は、底板(310)の表面にベースを備えるように組み立てられている請求項1に記載のイオン注入装置。
- 該基準電極は、支持体(325)の表面にベースを備えるように組み立てられた複数のストリップ(321,322,323,324)から構成され、該ストリップのそれぞれは、2枚の連続する板の間に挿入される請求項2に記載のイオン注入装置。
- 該プラズマ源は、該基板保持具(304)と支持体(320)によって構成され、放電電圧がこれらの2個のエレメントの間に加えられる請求項1から3のいずれかに記載のイオン注入装置。
- 該プラズマ源は、該基板保持具(304)の位置に合わせて該容器(301)を囲む高周波(RF)アンテナ(340)であり、該高周波アンテナは高周波(RF)発生器に接続される請求項1から3のいずれかに記載のイオン注入装置。
- 該プラズマ源(405−406)は、該ガス吸気口(402)と該基板保持具(304)との間において該容器(401)の周囲に配置されており、該プラズマ源は、発生器によってエネルギーを与えられる請求項1から3のいずれかに記載のイオン注入装置。
- 該容器(301,401)の外側において該基板保持具(304)の周囲に配置された磁気コイル(330,410)を含む請求項4から6のいずれかに記載のイオン注入装置。
- 該基板保持具(304)を加熱するヒーター手段を含む請求項4から7のいずれかに記載のイオン注入装置。
- 該基板保持具(304)は接地されている請求項1から8のいずれかに記載のイオン注入装置。
- 該基準電極(110,320)は接地されている請求項1から8のいずれかに記載のイオン注入装置。
- 該板(105−106,305−306−307−308−309)は水平である請求項1から10のいずれかに記載のイオン注入装置。
- 該板(105−106,305−306−307−308−309)は鉛直である請求項1から10のいずれかに記載のイオン注入装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1300845 | 2013-04-11 | ||
FR1300845A FR3004465B1 (fr) | 2013-04-11 | 2013-04-11 | Machine d'implantation ionique presentant une productivite accrue |
PCT/FR2014/000079 WO2014167193A1 (fr) | 2013-04-11 | 2014-04-09 | Machine d'implantation ionique presentant une productivite accrue |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2016516284A true JP2016516284A (ja) | 2016-06-02 |
Family
ID=48901033
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016507022A Pending JP2016516284A (ja) | 2013-04-11 | 2014-04-09 | 高生産性イオン注入装置 |
Country Status (8)
Country | Link |
---|---|
US (1) | US9524853B2 (ja) |
EP (1) | EP2984203B1 (ja) |
JP (1) | JP2016516284A (ja) |
KR (1) | KR20150140311A (ja) |
CN (1) | CN105283580A (ja) |
FR (1) | FR3004465B1 (ja) |
TW (1) | TW201501182A (ja) |
WO (1) | WO2014167193A1 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5853122B2 (ja) * | 2013-05-10 | 2016-02-09 | 株式会社日立ハイテクノロジーズ | 荷電粒子線装置 |
KR102192604B1 (ko) * | 2017-08-14 | 2020-12-17 | 가부시키가이샤 코쿠사이 엘렉트릭 | 플라스마 이상 판정 방법, 반도체 장치의 제조 방법 및 기판 처리 장치 |
CN107706078B (zh) * | 2017-09-22 | 2019-08-06 | 深圳市中科摩方科技有限公司 | 一种全方位等离子体浸没离子注入装置 |
KR20220006345A (ko) | 2020-07-08 | 2022-01-17 | 에스케이하이닉스 주식회사 | 이온 소스 헤드 및 이를 포함하는 이온 주입 장치 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003513441A (ja) * | 1999-10-27 | 2003-04-08 | バリアン・セミコンダクター・エクイップメント・アソシエイツ・インコーポレイテッド | 中空カソードを含むプラズマドーピングシステム。 |
JP2007092108A (ja) * | 2005-09-28 | 2007-04-12 | Plasma Ion Assist Co Ltd | 機能性薄膜の形成方法及び機能性薄膜形成装置 |
US20120279449A1 (en) * | 2004-07-14 | 2012-11-08 | Chu Paul K | Apparatus and method for focused electric field enhanced plasma-based ion implantation |
WO2012168575A2 (fr) * | 2011-06-09 | 2012-12-13 | Ion Beam Services | Machine d'implantation ionique en mode immersion plasma pour procédé basse pression |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA1269950A (en) * | 1984-06-22 | 1990-06-05 | Yoshihisa Tawada | Glow-discharge decomposition apparatus |
US6136385A (en) * | 1999-07-29 | 2000-10-24 | Saatec Engineering Corporation | Surface reforming method of a metal product |
FR2879625B1 (fr) * | 2004-02-04 | 2007-04-27 | Guernalec Frederic | Dispositif de nitruration par implantation ionique d'une piece en alliage d'aluminium et procede mettant en oeuvre un tel dispositif |
GB2417251A (en) * | 2004-08-18 | 2006-02-22 | Nanofilm Technologies Int | Removing material from a substrate surface using plasma |
JP4185483B2 (ja) * | 2004-10-22 | 2008-11-26 | シャープ株式会社 | プラズマ処理装置 |
US20060121704A1 (en) * | 2004-12-07 | 2006-06-08 | Varian Semiconductor Equipment Associates, Inc. | Plasma ion implantation system with axial electrostatic confinement |
JP4584722B2 (ja) * | 2005-01-13 | 2010-11-24 | シャープ株式会社 | プラズマ処理装置および同装置により製造された半導体素子 |
US7326937B2 (en) * | 2005-03-09 | 2008-02-05 | Verian Semiconductor Equipment Associates, Inc. | Plasma ion implantation systems and methods using solid source of dopant material |
WO2006107044A1 (ja) * | 2005-04-04 | 2006-10-12 | Matsushita Electric Industrial Co., Ltd. | プラズマ処理方法及び装置 |
WO2010033713A2 (en) * | 2008-09-17 | 2010-03-25 | Energy Photovoltaics, Inc. | Large batch production of thin photovoltaic modules |
CN102312210A (zh) * | 2010-07-05 | 2012-01-11 | 中国科学院微电子研究所 | 一种等离子体浸没离子注入系统 |
-
2013
- 2013-04-11 FR FR1300845A patent/FR3004465B1/fr not_active Expired - Fee Related
-
2014
- 2014-04-09 JP JP2016507022A patent/JP2016516284A/ja active Pending
- 2014-04-09 EP EP14721913.3A patent/EP2984203B1/fr active Active
- 2014-04-09 CN CN201480027318.7A patent/CN105283580A/zh active Pending
- 2014-04-09 US US14/783,296 patent/US9524853B2/en active Active
- 2014-04-09 WO PCT/FR2014/000079 patent/WO2014167193A1/fr active Application Filing
- 2014-04-09 KR KR1020157030827A patent/KR20150140311A/ko not_active Application Discontinuation
- 2014-04-10 TW TW103113211A patent/TW201501182A/zh unknown
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003513441A (ja) * | 1999-10-27 | 2003-04-08 | バリアン・セミコンダクター・エクイップメント・アソシエイツ・インコーポレイテッド | 中空カソードを含むプラズマドーピングシステム。 |
US20120279449A1 (en) * | 2004-07-14 | 2012-11-08 | Chu Paul K | Apparatus and method for focused electric field enhanced plasma-based ion implantation |
JP2007092108A (ja) * | 2005-09-28 | 2007-04-12 | Plasma Ion Assist Co Ltd | 機能性薄膜の形成方法及び機能性薄膜形成装置 |
WO2012168575A2 (fr) * | 2011-06-09 | 2012-12-13 | Ion Beam Services | Machine d'implantation ionique en mode immersion plasma pour procédé basse pression |
Also Published As
Publication number | Publication date |
---|---|
CN105283580A (zh) | 2016-01-27 |
WO2014167193A1 (fr) | 2014-10-16 |
US9524853B2 (en) | 2016-12-20 |
FR3004465B1 (fr) | 2015-05-08 |
FR3004465A1 (fr) | 2014-10-17 |
EP2984203A1 (fr) | 2016-02-17 |
US20160071695A1 (en) | 2016-03-10 |
KR20150140311A (ko) | 2015-12-15 |
EP2984203B1 (fr) | 2019-08-07 |
TW201501182A (zh) | 2015-01-01 |
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