JP6534393B2 - 高電圧でバイアスされる静電式加熱基板保持具 - Google Patents
高電圧でバイアスされる静電式加熱基板保持具 Download PDFInfo
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- JP6534393B2 JP6534393B2 JP2016550197A JP2016550197A JP6534393B2 JP 6534393 B2 JP6534393 B2 JP 6534393B2 JP 2016550197 A JP2016550197 A JP 2016550197A JP 2016550197 A JP2016550197 A JP 2016550197A JP 6534393 B2 JP6534393 B2 JP 6534393B2
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- substrate holder
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- 239000000758 substrate Substances 0.000 title claims description 79
- 238000010438 heat treatment Methods 0.000 title claims description 10
- 239000000523 sample Substances 0.000 claims description 9
- 238000001816 cooling Methods 0.000 claims description 3
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 3
- 210000002381 plasma Anatomy 0.000 description 16
- 239000007789 gas Substances 0.000 description 11
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 150000002500 ions Chemical class 0.000 description 7
- 238000000034 method Methods 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 238000007654 immersion Methods 0.000 description 4
- 238000002513 implantation Methods 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 239000013529 heat transfer fluid Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000003779 heat-resistant material Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000001802 infusion Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32412—Plasma immersion ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68728—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of separate clamping members, e.g. clamping fingers
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- High Energy & Nuclear Physics (AREA)
- Physical Vapour Deposition (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
Description
高電圧電源に接続され、電気絶縁性の台に支持された導電性のバイアステーブルと、
その上面が基板を受けるように設計された支え面を有する、円筒の形状の電気絶縁性の基板保持具と、
該基板保持具の底面を支持するように、該バイアステーブル上に立っている脚部と、
該支え面を該バイアステーブルへ接続するための、少なくとも一つの導電性接続部と、を含み、
該基板保持具(20)が加熱エレメントを組み込んでいる。
該上面の周縁に配置された第1のストリップと、
該円筒上において、該第1のストリップと該肩部との間に伸びる第2のストリップと、
該第2のストリップに接触し、該肩部に配置された第3のストリップと、
該第3のストリップと該クランプフランジとの間に配置された導電性のバネと、を含むのが有利である。
バイアステーブル10
基板保持具20
クランプフランジ30
台40
アノード・基板キャパシタ、及び
基板・カソードキャパシタ
という2個のキャパシタを製造することにある。
温度プローブ27の変換器28
ヒーター抵抗26の電源
基板保持具20の電極25の電源、及び
熱伝達ガスの圧力調節器
基板保持具20の温度を設定する。
基板50を基板保持具20に載せる。
基板を10秒(s)から30s予熱する。
基板50をクランプするために電極25を作動させる。
3トルから10トルの圧力で管11へ熱伝達ガスを導入する。
イオンを注入する。
熱伝達ガスの導入を中断し、熱伝達ガスをポンプで排出する。
クランプ電極25を停止させる。
基板50を取り出す。
Claims (8)
- 高電圧電源(12)に接続され、電気絶縁性の台(40)に支持された導電性のバイアステーブル(10)と、
その上面が基板(50)を受けるように設計された支え面を有する、円筒の形状の電気絶縁性の基板保持具(20)と、
該基板保持具(20)の底面を支持するように、該バイアステーブル(10)上に立っている脚部(15)と、
該支え面を該バイアステーブル(10)へ接続するための、少なくとも一つの導電性接続部(201,202,203,31,30)と、を含み、
該基板保持具(20)が加熱エレメント(26)を組み込んだ支持体。 - 該基板保持具(20)が基部に肩部(21)を備え、該バイアステーブル(10)に対して該肩部(21)をクランプするクランプフランジ(30)をさらに含む請求項1に記載の支持体。
- 該支え面を該肩部(21)へ接続するための少なくとも一つの導電性エレメント(201,202,203)を含む請求項2に記載の支持体。
- 該導電性エレメントは、
該上面の周縁に配置された第1のストリップ(201)と、
該円筒上において、該第1のストリップ(201)と該肩部(21)との間に伸びる第2のストリップ(202)と、
該第2のストリップ(202)に接触し、該肩部(21)に配置された第3のストリップ(203)と、
該第3のストリップ(203)と該クランプフランジ(30)との間に配置された導電性のバネ(31)と、を含む請求項3に記載の支持体。 - 該基板保持具(20)の底面と該バイアステーブル(10)との間に置かれた少なくとも一つの熱遮蔽板(29)を含む請求項1から4のいずれかに記載の支持体。
- 該基板保持具(20)に接触した温度プローブ(27)を含む請求項1から5のいずれかに記載の支持体。
- 該温度プローブ(27)は、該加熱エレメント(26)へパワーを供給する調節器(28)へ接続された請求項6に記載の支持体。
- 該バイアステーブル(10)は、冷却用配管網(13)を組み込んだ請求項1から7のいずれかに記載の支持体。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1400352 | 2014-02-07 | ||
FR1400352A FR3017487B1 (fr) | 2014-02-07 | 2014-02-07 | Porte-substrat electrostatique chauffant et polarise en haute tension |
PCT/FR2015/000028 WO2015118237A1 (fr) | 2014-02-07 | 2015-02-04 | Porte-substrat électrostatique chauffant et polarisé en haute tension |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2017511972A JP2017511972A (ja) | 2017-04-27 |
JP6534393B2 true JP6534393B2 (ja) | 2019-06-26 |
Family
ID=51167950
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016550197A Active JP6534393B2 (ja) | 2014-02-07 | 2015-02-04 | 高電圧でバイアスされる静電式加熱基板保持具 |
Country Status (7)
Country | Link |
---|---|
US (1) | US9922856B2 (ja) |
EP (1) | EP3103137B1 (ja) |
JP (1) | JP6534393B2 (ja) |
KR (1) | KR102295802B1 (ja) |
CN (1) | CN106165083B (ja) |
FR (1) | FR3017487B1 (ja) |
WO (1) | WO2015118237A1 (ja) |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1994011944A1 (en) * | 1992-11-06 | 1994-05-26 | Varian Associates, Inc. | Electrostatic wafer clamp |
US6014082A (en) * | 1997-10-03 | 2000-01-11 | Sony Corporation | Temperature monitoring and calibration system for control of a heated CVD chuck |
US7094670B2 (en) | 2000-08-11 | 2006-08-22 | Applied Materials, Inc. | Plasma immersion ion implantation process |
US6538872B1 (en) | 2001-11-05 | 2003-03-25 | Applied Materials, Inc. | Electrostatic chuck having heater and method |
JP2004047512A (ja) * | 2002-07-08 | 2004-02-12 | Tokyo Electron Ltd | 吸着状態判別方法、離脱方法、処理方法、静電吸着装置および処理装置 |
JP4913695B2 (ja) * | 2007-09-20 | 2012-04-11 | 東京エレクトロン株式会社 | 基板処理装置及びそれに用いる基板載置台 |
CN102067303B (zh) * | 2009-02-18 | 2012-11-28 | 株式会社爱发科 | 晶片搬送用托盘以及在该托盘上固定晶片的方法 |
FR2985087B1 (fr) * | 2011-12-21 | 2014-03-07 | Ion Beam Services | Support comportant un porte-substrat electrostatique |
JP5989593B2 (ja) * | 2012-04-27 | 2016-09-07 | 日本碍子株式会社 | 半導体製造装置用部材 |
-
2014
- 2014-02-07 FR FR1400352A patent/FR3017487B1/fr not_active Expired - Fee Related
-
2015
- 2015-02-04 CN CN201580012658.7A patent/CN106165083B/zh active Active
- 2015-02-04 JP JP2016550197A patent/JP6534393B2/ja active Active
- 2015-02-04 US US15/117,024 patent/US9922856B2/en active Active
- 2015-02-04 WO PCT/FR2015/000028 patent/WO2015118237A1/fr active Application Filing
- 2015-02-04 EP EP15713195.4A patent/EP3103137B1/fr active Active
- 2015-02-04 KR KR1020167024543A patent/KR102295802B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
US9922856B2 (en) | 2018-03-20 |
KR102295802B1 (ko) | 2021-08-31 |
CN106165083B (zh) | 2019-11-01 |
WO2015118237A1 (fr) | 2015-08-13 |
FR3017487A1 (fr) | 2015-08-14 |
US20170178943A1 (en) | 2017-06-22 |
KR20160118333A (ko) | 2016-10-11 |
EP3103137B1 (fr) | 2021-07-21 |
EP3103137A1 (fr) | 2016-12-14 |
JP2017511972A (ja) | 2017-04-27 |
CN106165083A (zh) | 2016-11-23 |
FR3017487B1 (fr) | 2016-03-18 |
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