JP6095903B2 - 固体撮像装置の製造方法及び固体撮像装置 - Google Patents
固体撮像装置の製造方法及び固体撮像装置 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims description 25
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- 229920005989 resin Polymers 0.000 claims description 19
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- 239000010410 layer Substances 0.000 description 48
- 239000004065 semiconductor Substances 0.000 description 28
- 239000002243 precursor Substances 0.000 description 26
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- 239000011229 interlayer Substances 0.000 description 11
- 230000003647 oxidation Effects 0.000 description 6
- 238000007254 oxidation reaction Methods 0.000 description 6
- 238000005530 etching Methods 0.000 description 5
- 238000001514 detection method Methods 0.000 description 4
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- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
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- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
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- 229910052737 gold Inorganic materials 0.000 description 2
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- 239000012535 impurity Substances 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
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- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
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- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14634—Assemblies, i.e. Hybrid structures
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- H01—ELECTRIC ELEMENTS
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
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- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1464—Back illuminated imager structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/1469—Assemblies, i.e. hybrid integration
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14636—Interconnect structures
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
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Description
前記貫通孔内に配置されると共に前記電極と電気的に接続された、導電性を有するボール状部材とを備える。
図1〜図4を参照して、第1実施形態に係る固体撮像装置1AがICチップ2に搭載された電子部品3の構成について説明する。固体撮像装置1Aは、図1に示されるように、CCDタイプの裏面照射型撮像素子10と、撮像素子10を支持する支持基板20と、複数のボール状部材30とを備える。
続いて、図14〜図16を参照して、第2実施形態に係る固体撮像装置1BがICチップ2に搭載された電子部品3の構成について説明する。固体撮像装置1Bは、支持基板20における貫通孔23の大きさ及び数の点で固体撮像装置1Aと異なる。以下では、主としてこの相違点について説明する。
Claims (10)
- エネルギー線が入射される第1の主面と、前記第1の主面に対向すると共に電極が配置された第2の主面と、入射されたエネルギー線を光電変換して信号電荷を発生する光電変換部とを含む撮像素子を用意する第1の工程と、
厚さ方向に延びる貫通孔が設けられると共に互いに対向する第3及び第4の主面を有する支持基板を用意する第2の工程と、
前記第2の主面と前記第3の主面とが対向し且つ前記貫通孔から前記電極が露出するように前記撮像素子と前記支持基板とを位置合わせして、前記撮像素子と前記支持基板とを接合する第3の工程と、
前記第3の工程の後に、前記支持基板の厚みよりも大きな直径を有し且つ導電性を有するボール状部材を前記貫通孔内に配置して、前記ボール状部材の一部が前記支持基板の前記第4の主面よりも外側に突出した状態となるように前記ボール状部材を前記電極に電気的に接続する第4の工程とを有し、
前記第1の工程で用意された前記撮像素子の前記電極及び前記第2の主面は、平坦化膜によって覆われており、
前記第3の工程の後で且つ前記第4の工程の前に、前記電極の表面の少なくとも一部が露出するように前記平坦化膜の一部を除去する、固体撮像装置の製造方法。 - 前記第3の工程の後で且つ前記第4の工程の前に前記電極にめっき膜を形成する、請求項1に記載の方法。
- 前記貫通孔は前記第3の主面から前記第4の主面に向かうにつれて拡径している、請求項1又は2に記載の方法。
- 前記支持基板には、一つの前記貫通孔に対して複数の前記電極が対応するように、少なくとも一つの前記貫通孔が設けられており、
前記第3の工程では、一つの前記貫通孔から複数の前記電極が露出するように、前記撮像素子と前記支持基板とが位置合わせされ、
前記第4の工程では、前記電極のそれぞれに前記ボール状部材が一つずつ電気的に接合される、請求項1〜3のいずれか一項に記載の方法。 - 前記支持基板には、一つの前記貫通孔に対して一つの前記電極が対応するように、少なくとも一つの前記貫通孔が設けられており、
前記第3の工程では、一つの前記貫通孔から一つの前記電極が露出するように、前記撮像素子と前記支持基板とが位置合わせされ、
前記第4の工程では、前記電極のそれぞれに前記ボール状部材が一つずつ電気的に接合される、請求項1〜3のいずれか一項に記載の方法。 - 前記第4の工程の後に、前記ボール状部材と前記貫通孔との間に樹脂材料を充填する第5の工程をさらに有する、請求項1〜5のいずれか一項に記載の方法。
- エネルギー線が入射される第1の主面と、前記第1の主面に対向すると共に電極が配置された第2の主面と、入射されたエネルギー線を光電変換して信号電荷を発生する光電変換部とを含む撮像素子と、
厚さ方向に延びる貫通孔が設けられると共に互いに対向する第3及び第4の主面を有し、前記第3の主面が前記第2の主面と対向し且つ前記貫通孔から前記電極が露出するように前記撮像素子と接合された支持基板と、
前記貫通孔内に配置されると共に前記電極と電気的に接続された、前記支持基板の厚みよりも大きな直径を有し且つ導電性を有するボール状部材と、
前記第2の主面を覆う平坦化膜とを備え、
前記ボール状部材の一部は、前記支持基板の前記第4の主面よりも外側に突出しており、
前記電極の表面の少なくとも一部は前記平坦化膜から露出しており、
前記支持基板には、一つの前記貫通孔から複数の前記電極が露出するように、少なくとも一つの前記貫通孔が設けられており、
前記各電極に前記ボール状部材が一つずつ電気的に接合される、固体撮像装置。 - 前記電極にめっき膜が形成されている、請求項7に記載の固体撮像装置。
- 前記貫通孔は前記第3の主面から前記第4の主面に向かうにつれて拡径している、請求項7又は8に記載の固体撮像装置。
- 前記ボール状部材と前記貫通孔との間に樹脂材料が配置されている、請求項7〜9のいずれか一項に記載の固体撮像装置。
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JP2012136198A JP6095903B2 (ja) | 2012-06-15 | 2012-06-15 | 固体撮像装置の製造方法及び固体撮像装置 |
CN201380031690.0A CN104396016B (zh) | 2012-06-15 | 2013-02-21 | 固体摄像装置的制造方法及固体摄像装置 |
EP13804510.9A EP2863438B1 (en) | 2012-06-15 | 2013-02-21 | Manufacturing method for solid-state imaging device and solid-state imaging device |
US14/407,633 US10068800B2 (en) | 2012-06-15 | 2013-02-21 | Manufacturing method for solid-state imaging device and solid-state imaging device |
PCT/JP2013/054392 WO2013187086A1 (ja) | 2012-06-15 | 2013-02-21 | 固体撮像装置の製造方法及び固体撮像装置 |
KR1020147029930A KR102051167B1 (ko) | 2012-06-15 | 2013-02-21 | 고체 촬상 장치의 제조 방법 및 고체 촬상 장치 |
TW102108908A TWI573256B (zh) | 2012-06-15 | 2013-03-13 | Manufacturing method of solid-state imaging device and solid-state imaging device |
US16/000,603 US10825730B2 (en) | 2012-06-15 | 2018-06-05 | Manufacturing method for solid-state imaging device and solid-state imaging device |
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EP (1) | EP2863438B1 (ja) |
JP (1) | JP6095903B2 (ja) |
KR (1) | KR102051167B1 (ja) |
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JP7373030B1 (ja) * | 2022-07-28 | 2023-11-01 | セイコーNpc株式会社 | 光学デバイス、及び光学デバイスの製造方法 |
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JP3856414B2 (ja) | 1997-12-25 | 2006-12-13 | 日本ビクター株式会社 | プリント配線基板の製造方法及びプリント配線基板 |
US6733902B2 (en) * | 2001-08-16 | 2004-05-11 | Shin-Etsu Chemical Co., Ltd. | Liquid epoxy resin composition and semiconductor device |
JP2004057507A (ja) * | 2002-07-29 | 2004-02-26 | Toshiba Corp | X線検出装置、貫通電極の製造方法及びx線断層撮影装置 |
JP2005108991A (ja) * | 2003-09-29 | 2005-04-21 | Seiko Epson Corp | 実装構造体、液晶表示装置および電子機器 |
JP4940667B2 (ja) | 2005-06-02 | 2012-05-30 | ソニー株式会社 | 固体撮像素子及びその製造方法 |
JP4637139B2 (ja) * | 2007-05-31 | 2011-02-23 | 富士フイルム株式会社 | 撮像素子及び撮像素子の製造方法 |
EP2304783A1 (en) * | 2008-05-28 | 2011-04-06 | MVM Technologies, Inc. | Maskless process for solder bumps production |
JP5289832B2 (ja) * | 2008-06-17 | 2013-09-11 | 新光電気工業株式会社 | 半導体装置および半導体装置の製造方法 |
EP2312620A4 (en) * | 2008-08-04 | 2013-12-25 | Panasonic Corp | FLEXIBLE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME |
JP5422236B2 (ja) * | 2009-03-23 | 2014-02-19 | 株式会社東芝 | 撮像装置 |
JP2011015472A (ja) * | 2009-06-30 | 2011-01-20 | Sanyo Electric Co Ltd | インバータ装置 |
JP2011014572A (ja) * | 2009-06-30 | 2011-01-20 | Sumitomo Bakelite Co Ltd | 回路基板の製造方法及び半田塊 |
JP2011086828A (ja) * | 2009-10-16 | 2011-04-28 | Sumco Corp | 半導体装置およびその製造方法 |
JP2010199602A (ja) * | 2010-04-16 | 2010-09-09 | Sony Corp | 固体撮像素子及びその製造方法 |
FR2963982B1 (fr) * | 2010-08-20 | 2012-09-28 | Soitec Silicon On Insulator | Procede de collage a basse temperature |
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WO2013187086A1 (ja) | 2013-12-19 |
KR102051167B1 (ko) | 2019-12-02 |
EP2863438A1 (en) | 2015-04-22 |
US10068800B2 (en) | 2018-09-04 |
KR20150032658A (ko) | 2015-03-27 |
EP2863438A4 (en) | 2016-02-24 |
CN104396016B (zh) | 2017-03-29 |
EP2863438B1 (en) | 2019-06-05 |
TW201351625A (zh) | 2013-12-16 |
JP2014003091A (ja) | 2014-01-09 |
CN104396016A (zh) | 2015-03-04 |
US10825730B2 (en) | 2020-11-03 |
US20180286752A1 (en) | 2018-10-04 |
TWI573256B (zh) | 2017-03-01 |
US20150187649A1 (en) | 2015-07-02 |
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