JP6093328B2 - 基板処理システム、基板処理方法、プログラム及びコンピュータ記憶媒体 - Google Patents

基板処理システム、基板処理方法、プログラム及びコンピュータ記憶媒体 Download PDF

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Publication number
JP6093328B2
JP6093328B2 JP2014109233A JP2014109233A JP6093328B2 JP 6093328 B2 JP6093328 B2 JP 6093328B2 JP 2014109233 A JP2014109233 A JP 2014109233A JP 2014109233 A JP2014109233 A JP 2014109233A JP 6093328 B2 JP6093328 B2 JP 6093328B2
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Japan
Prior art keywords
substrate
wafer
cleaning
grinding
damaged layer
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JP2014109233A
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English (en)
Japanese (ja)
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JP2015019053A (ja
Inventor
義雄 木村
義雄 木村
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2014109233A priority Critical patent/JP6093328B2/ja
Priority to PCT/JP2014/064406 priority patent/WO2014199845A1/ja
Priority to KR1020157035296A priority patent/KR101629627B1/ko
Priority to CN201480033610.XA priority patent/CN105308725B/zh
Priority to TW103120166A priority patent/TWI613717B/zh
Priority to TW106143222A priority patent/TWI664670B/zh
Publication of JP2015019053A publication Critical patent/JP2015019053A/ja
Application granted granted Critical
Publication of JP6093328B2 publication Critical patent/JP6093328B2/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H01L21/67219—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one polishing chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
    • H01L21/67173—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers in-line arrangement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
    • H01L21/67178—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers vertical arrangement

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Weting (AREA)
JP2014109233A 2013-06-13 2014-05-27 基板処理システム、基板処理方法、プログラム及びコンピュータ記憶媒体 Active JP6093328B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2014109233A JP6093328B2 (ja) 2013-06-13 2014-05-27 基板処理システム、基板処理方法、プログラム及びコンピュータ記憶媒体
PCT/JP2014/064406 WO2014199845A1 (ja) 2013-06-13 2014-05-30 基板処理システム、基板処理方法及びコンピュータ記憶媒体
KR1020157035296A KR101629627B1 (ko) 2013-06-13 2014-05-30 기판 처리 시스템, 기판 처리 방법 및 컴퓨터 기억 매체
CN201480033610.XA CN105308725B (zh) 2013-06-13 2014-05-30 基板处理系统和基板处理方法
TW103120166A TWI613717B (zh) 2013-06-13 2014-06-11 基板處理系統、基板處理方法、程式及電腦記憶媒體
TW106143222A TWI664670B (zh) 2013-06-13 2014-06-11 基板處理系統、基板處理方法、程式及電腦記憶媒體

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2013124406 2013-06-13
JP2013124406 2013-06-13
JP2014109233A JP6093328B2 (ja) 2013-06-13 2014-05-27 基板処理システム、基板処理方法、プログラム及びコンピュータ記憶媒体

Publications (2)

Publication Number Publication Date
JP2015019053A JP2015019053A (ja) 2015-01-29
JP6093328B2 true JP6093328B2 (ja) 2017-03-08

Family

ID=52022143

Family Applications (1)

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JP2014109233A Active JP6093328B2 (ja) 2013-06-13 2014-05-27 基板処理システム、基板処理方法、プログラム及びコンピュータ記憶媒体

Country Status (5)

Country Link
JP (1) JP6093328B2 (zh)
KR (1) KR101629627B1 (zh)
CN (1) CN105308725B (zh)
TW (2) TWI613717B (zh)
WO (1) WO2014199845A1 (zh)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6242603B2 (ja) * 2013-06-25 2017-12-06 株式会社ディスコ ウエーハ加工装置
JP2017108113A (ja) * 2015-11-27 2017-06-15 株式会社荏原製作所 基板処理装置および基板処理方法ならびに基板処理装置の制御プログラム
JP2017212345A (ja) * 2016-05-25 2017-11-30 ラピスセミコンダクタ株式会社 半導体製造装置、及び半導体製造方法
JP6727044B2 (ja) * 2016-06-30 2020-07-22 株式会社荏原製作所 基板処理装置
JP6902872B2 (ja) * 2017-01-10 2021-07-14 東京エレクトロン株式会社 基板処理システムおよび基板処理方法
CN110809816A (zh) * 2017-07-12 2020-02-18 东京毅力科创株式会社 磨削装置、磨削方法以及计算机存储介质
JP7002874B2 (ja) * 2017-07-21 2022-01-20 東京エレクトロン株式会社 基板処理システム
JP6877585B2 (ja) * 2017-12-19 2021-05-26 東京エレクトロン株式会社 基板処理システム、基板処理方法及びコンピュータ記憶媒体
US11752576B2 (en) * 2018-03-14 2023-09-12 Tokyo Electron Limited Substrate processing system for removing peripheral portion of substrate, substrate processing method and computer readable recording medium thereof
CN117542753A (zh) * 2018-04-27 2024-02-09 东京毅力科创株式会社 基板处理系统和基板处理方法
KR20210005110A (ko) * 2018-04-27 2021-01-13 도쿄엘렉트론가부시키가이샤 기판 처리 시스템 및 기판 처리 방법
US11817337B2 (en) * 2018-08-23 2023-11-14 Tokyo Electron Limited Substrate processing system and substrate processing method
JP2020031158A (ja) * 2018-08-23 2020-02-27 東京エレクトロン株式会社 基板処理システム
JP7037459B2 (ja) 2018-09-10 2022-03-16 キオクシア株式会社 半導体製造装置および半導体装置の製造方法
JP7387316B2 (ja) 2019-07-19 2023-11-28 株式会社Ｓｃｒｅｅｎホールディングス 基板処理システムおよび基板搬送方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61276224A (ja) * 1985-05-30 1986-12-06 Wakomu:Kk 物品洗浄装置
US6315858B1 (en) * 1998-03-18 2001-11-13 Ebara Corporation Gas polishing apparatus and method
JP3579244B2 (ja) * 1998-03-18 2004-10-20 株式会社荏原製作所 ガスポリッシング用のノズル機構及び該機構を用いたガスポリッシング室及びポリッシング装置
JP2993497B1 (ja) * 1998-09-02 1999-12-20 日本電気株式会社 研磨装置および研磨方法
JP3646921B2 (ja) * 2000-03-06 2005-05-11 三菱住友シリコン株式会社 張り合わせ誘電体分離ウェーハの製造方法
TW492100B (en) * 2000-03-13 2002-06-21 Disco Corp Semiconductor wafer processing apparatus
JP3633854B2 (ja) * 2000-06-12 2005-03-30 株式会社ディスコ 半導体ウェハの加工装置
JP4416108B2 (ja) * 2003-11-17 2010-02-17 株式会社ディスコ 半導体ウェーハの製造方法
JP2008012622A (ja) * 2006-07-05 2008-01-24 Tokyo Seimitsu Co Ltd ウェーハ面取り装置及びウェーハ面取り方法
JP5511190B2 (ja) * 2008-01-23 2014-06-04 株式会社荏原製作所 基板処理装置の運転方法
JP5357477B2 (ja) * 2008-09-17 2013-12-04 株式会社ディスコ 研削方法および研削装置
JP2010177541A (ja) * 2009-01-30 2010-08-12 Pre-Tech At:Kk Ｓｉウェーハの加工ダメージ除去方法
JP2011165994A (ja) 2010-02-12 2011-08-25 Okamoto Machine Tool Works Ltd 半導体基板の平坦化加工装置
JP5323867B2 (ja) * 2011-01-19 2013-10-23 東京エレクトロン株式会社 基板反転装置、基板反転方法、剥離システム、プログラム及びコンピュータ記憶媒体

Also Published As

Publication number Publication date
KR101629627B1 (ko) 2016-06-13
CN105308725A (zh) 2016-02-03
TW201515080A (zh) 2015-04-16
TW201828348A (zh) 2018-08-01
TWI664670B (zh) 2019-07-01
KR20160003873A (ko) 2016-01-11
JP2015019053A (ja) 2015-01-29
CN105308725B (zh) 2016-09-14
WO2014199845A1 (ja) 2014-12-18
TWI613717B (zh) 2018-02-01

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