JP6089146B2 - 色素増感太陽電池および前記太陽電池の製造方法 - Google Patents
色素増感太陽電池および前記太陽電池の製造方法 Download PDFInfo
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- 239000000758 substrate Substances 0.000 claims description 148
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- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 38
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- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 14
- 229910052719 titanium Inorganic materials 0.000 claims description 14
- 239000010936 titanium Substances 0.000 claims description 14
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 12
- 239000011148 porous material Substances 0.000 claims description 11
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- UUIMDJFBHNDZOW-UHFFFAOYSA-N 2-tert-butylpyridine Chemical compound CC(C)(C)C1=CC=CC=N1 UUIMDJFBHNDZOW-UHFFFAOYSA-N 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
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- 239000002202 Polyethylene glycol Substances 0.000 description 1
- 229910004796 P—Li Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
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- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000012080 ambient air Substances 0.000 description 1
- 150000001868 cobalt Chemical class 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 239000008119 colloidal silica Substances 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical compound I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- QSZMZKBZAYQGRS-UHFFFAOYSA-N lithium;bis(trifluoromethylsulfonyl)azanide Chemical compound [Li+].FC(F)(F)S(=O)(=O)[N-]S(=O)(=O)C(F)(F)F QSZMZKBZAYQGRS-UHFFFAOYSA-N 0.000 description 1
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- WRTMQOHKMFDUKX-UHFFFAOYSA-N triiodide Chemical compound I[I-]I WRTMQOHKMFDUKX-UHFFFAOYSA-N 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/2059—Light-sensitive devices comprising an organic dye as the active light absorbing material, e.g. adsorbed on an electrode or dissolved in solution
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/2004—Light-sensitive devices characterised by the electrolyte, e.g. comprising an organic electrolyte
- H01G9/2013—Light-sensitive devices characterised by the electrolyte, e.g. comprising an organic electrolyte the electrolyte comprising ionic liquids, e.g. alkyl imidazolium iodide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/2027—Light-sensitive devices comprising an oxide semiconductor electrode
- H01G9/2031—Light-sensitive devices comprising an oxide semiconductor electrode comprising titanium oxide, e.g. TiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/2068—Panels or arrays of photoelectrochemical cells, e.g. photovoltaic modules based on photoelectrochemical cells
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
- H10K30/15—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2
- H10K30/151—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2 the wide bandgap semiconductor comprising titanium oxide, e.g. TiO2
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/50—Organic perovskites; Hybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/542—Dye sensitized solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
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- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
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- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Hybrid Cells (AREA)
- Photovoltaic Devices (AREA)
Description
この発明は、色素増感太陽電池に関する。また、この発明は、色素増感太陽電池の製造方法に関する。
色素増感太陽電池(DSC)は、ここ20年間開発され続け、光合成のような類似の原理で動作する。シリコン太陽電池と異なり、これらの電池は、安価で環境に害をなさず(environmentally unobtrusive)、豊富に製造し得る色素を用いて太陽光線からエネルギーを得る。
導電媒体は、導電膜の孔の内部および導電膜間において多孔質絶縁基板の孔の内部に連続的な層を形成し、それによって、対向電極および光吸収層1を含む作用電極間の電荷の輸送を可能にする。第1導電膜は、光吸収層から電子を取り出し、外部の電気回路を介して対向電極に電子を輸送する(図1に図示せず)。対向電極は、導電媒体に電子を輸送するために用いられる。導電媒体は、光吸収層に電子を逆輸送し、それによって電気回路を閉じる。
この発明の目的は、導電媒体内の抵抗損失を低減するモノリシック色素増感太陽電池を提供することである。
‐光吸収層、
‐光吸収層から光生成電子を取り出すための第1導電膜、
‐第2導電膜を含む対向電極、
‐第1および第2導電膜間に配置された多孔質絶縁層、
‐多孔質絶縁層および第2導電膜間に配置され、第2導電膜と電気的に接触している第3導電膜であって、第3導電膜は、絶縁体から作られている多孔質基板、および絶縁体中に導電ネットワーク(conducting network)を形成している導電性粒子を含み、
‐対向電極および光吸収層間で電荷を移動させるための導電媒体
を備える。
この発明で実現される有利な点は、第1および第2導電膜間に薄い多孔質絶縁層を配置し、それでもなお、第1および第2導電膜を印刷するために十分良好な機械的特性を有する厚みのある多孔質基板を使用することが可能である点である。
この発明は、厚みのある多孔質基板を用いることを可能にし、それでもなお、導電媒体中の最小の電気抵抗損失を実現する。
‐絶縁体から作られている多孔質基板の上面にブロッキング剤を堆積して、基板の第1部分にブロッキング層を形成し、
‐基板の底面から基板の孔よりも小さな導電性粒子を染み込ませ、基板の第2部分に第3導電膜を形成し、
‐絶縁基板の上面に導電性粒子を備えたインクを堆積して、第1導電膜を形成し、
‐多孔質基板の底面に導電性粒子を備えたインクを堆積して、第2導電膜を形成し、そして
‐形成された構造を熱処理してブロッキング層を焼却し(burn off)、多孔質絶縁層を形成することを含む方法。
‐絶縁体から作られている多孔質基板(8)を用意し(providing)、
‐多孔質基板の孔よりも小さな導電性粒子を多孔質基板に染み込ませて第3導電膜(6a)を形成し、
‐多孔質基板の上面に絶縁体の層を堆積して多孔質絶縁層(5a)を形成し、
‐多孔質絶縁層(5a)上に多孔質導電膜を堆積して第1導電膜を形成し、そして
‐絶縁基板の底面に導電性粒子を含むインクを堆積して第2導電膜を形成することを含む方法。
この発明のさまざまな実施形態の説明によって添付図を参照して、これからこの発明をより詳細に説明する。
図2は、この発明による色素増感太陽電池の一例を示す。
図3は、この発明による色素増感太陽電池のもう一つの例を示す。
図4は、この発明による色素増感太陽電池の製造方法の一例を例示する。
図2は、この発明による色素増感太陽電池の第1の例を示す。色素増感太陽電池は、光吸収層1の形式で作用電極、光吸収層1から光生成電子を取り出すための第1導電膜2、第2導電膜3を含むカウンター電極、第1および第2導電膜間に配置された多孔質絶縁層5a、ならびにカウンター電極および作用電極間で電荷を移動させるための(図示しない)導電媒体を備える。色素増感太陽電池は、多孔質絶縁層5aおよび第2導電膜3間に配置された第3導電膜6aをさらに備え、第2導電膜3と電気的に接触している。
液体レドックス電解質系色素増感太陽電池(DSC)
固体正孔伝導体系DSC
Claims (17)
- 光吸収層、
光吸収層から電子を取り出すための第1導電膜、
第2導電膜を含む対向電極、
第1および第2導電膜間に配置されている多孔質絶縁層、および
対向電極および光吸収層間で電荷を移動させるための導電媒体
を備えた色素増感太陽電池であって、
前記色素増感太陽電池は、多孔質絶縁層および第2導電膜間に配置され、第2導電膜と電気的に接触している第3導電膜をさらに備え、第3導電膜は、絶縁体から作られている多孔質基板、および多孔質基板の孔の中に収容され、絶縁体中に導電ネットワークを形成している導電性粒子を含むことを特徴とする色素増感太陽電池。 - 多孔質基板は、マイクロファイバー織物を含む請求項1に記載の色素増感太陽電池。
- 多孔質絶縁層の厚さは、0.1μmおよび20μmの間である請求項1に記載の色素増感太陽電池。
- 第3導電膜の厚さは、1mmより短い請求項1に記載の色素増感太陽電池。
- 前記導電性粒子は、第2導電膜に用いられるのと同じ材料から作られている請求項1に記載の色素増感太陽電池。
- 前記導電性粒子は、チタン、チタン合金、ニッケル、ニッケル合金、炭素物質、導電性酸化物、導電性窒化物、導電性炭化物、導電性ケイ化物、またはそれらの混合物からなるグループから選択される材料から作られている請求項1に記載の色素増感太陽電池。
- 前記多孔質基板は、導電性粒子の前記ネットワークを含む第1部分、および導電性粒子を有しない第2部分を備え、第1部分は、前記第3導電膜を形成し、第2部分は前記多孔質絶縁層を形成している請求項1に記載の色素増感太陽電池。
- 多孔質基板の前記第2部分は、多孔質基板の前記第1部分より薄い請求項7に記載に色素増感太陽電池。
- 多孔質基板の一面に多孔質絶縁層が配置され、多孔質基板の反対面に第2導電膜が配置されている請求項1に記載の色素増感太陽電池。
- 導電媒体は、イオン液体電解質である請求項1に記載の色素増感太陽電池。
- 導電媒体は、コバルト錯体電解質である請求項1に記載の色素増感太陽電池。
- 導電媒体は、固体正孔伝導体である請求項1に記載の色素増感太陽電池。
- 固体正孔伝導帯は、ペロブスカイトである請求項12に記載の色素増感太陽電池。
- 光吸収層は、ペロブスカイトを備える請求項1に記載の色素増感太陽電池。
- 第1導電膜は、TiO2の表面層を有し、光吸収層は、ペロブスカイト層である請求項1に記載の色素増感太陽電池。
- 多孔質絶縁層の厚さは、0.5μmおよび10μmの間である請求項1に記載の色素増感太陽電池。
- 第3導電膜の厚さは、100μmより短い請求項1に記載の色素増感太陽電池。
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