JP6049877B2 - 集積回路のウェハ裏面の層からの基板貫通ビアの統合 - Google Patents
集積回路のウェハ裏面の層からの基板貫通ビアの統合 Download PDFInfo
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- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49827—Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
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- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/023—Redistribution layers [RDL] for bonding areas
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- H01L2224/02372—Disposition of the redistribution layers connecting to a via connection in the semiconductor or solid-state body
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- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/0401—Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
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- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
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- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
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- H01L2224/05548—Bonding area integrally formed with a redistribution layer on the semiconductor or solid-state body
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- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/1302—Disposition
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- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
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Description
本出願は、V.Ramachandranらの名義で2012年7月9日に出願された、米国仮特許出願第61/669,611号の利益を主張し、上記の仮出願の開示は、参照によりその全体が本明細書に明示的に組み込まれる。
102 半導体基板
104 キャリア基板
106 STI領域
108 ILD層
110 FEOL層
112 能動デバイス
114 能動デバイス
116 能動デバイス
120 MOL相互接続層
121 相互接続子
122 導電素子
123 導電素子
124 導電素子
125 導電素子
126 導電素子
128 相互接続子
130 STI層パッド
132 コンタクトエッチストップ層
140 局所的な相互接続子
200 断面図
250 TSVキャビティ
260 裏面絶縁層
300 断面図
370 絶縁ライナー層
400 断面図
470 側壁絶縁ライナー層、壁側絶縁層、側壁ライナー
500 断面図
600 断面図
652 バリアシード層
654 アンダーバンプメタル層
656 パッシベーション層
700 断面図
780 裏面TSV
800 断面図
890 レジスト
900 断面図
980 裏面TSV
982 RDL
1000 断面図
1100 ICデバイス
1300 断面図
1400 断面図
1500 断面図
1600 断面図
1700 断面図
1800 断面図
1900 断面図
2000 断面図
2100 断面図
2200 断面図
2300 断面図
2500 断面図
2600 断面図
2700 ワイヤレス通信システム
2720 遠隔ユニット
2725A ICデバイス
2725B ICデバイス
2725C ICデバイス
2730 遠隔ユニット
2740 基地局
2750 遠隔ユニット
2780 順方向リンク信号
2790 逆方向リンク信号
Claims (10)
- 半導体基板と、
前記半導体基板の表面上のシャロートレンチアイソレーション(STI)層パッドと、
コンタクトエッチストップ層上の層間誘電体(ILD)層であって、前記コンタクトエッチストップ層が、前記STI層パッドから前記ILD層を分離している、ILD層と、
前記半導体基板を貫通し、且つ前記STI層パッドの中に部分的であって、貫通せずに延在している基板貫通ビアであって、導電性充填材料および側壁絶縁ライナー層を含み、前記側壁絶縁ライナー層が、前記STI層パッドの中に延びるが前記STI層パッドを貫通しない部分を有する、基板貫通ビアとを含む、半導体デバイス。 - 前記側壁絶縁ライナー層の化学的な材料組成が、前記ILD層内の前記少なくとも1つのコンタクトの化学的な材料組成または前記STI層パッドの化学的組成と異なる、請求項1に記載の半導体デバイス。
- 前記側壁絶縁ライナー層が、ポリマー、窒化ケイ素、および酸化ケイ素からなる群から選択される材料で構成されている、請求項1に記載の半導体デバイス。
- 前記基板貫通ビアの前記導電性充填材料に結合された再配線層をさらに含む、請求項1に記載の半導体デバイス。
- 音楽プレーヤ、ビデオプレーヤ、娯楽ユニット、ナビゲーションデバイス、通信デバイス、携帯情報端末(PDA)、固定位置のデータユニット、およびコンピュータの少なくとも1つに組み込まれた、請求項1に記載の半導体デバイス。
- 半導体基板と、
前記半導体基板の表面上のシャロートレンチアイソレーション(STI)層パッドと、
コンタクトエッチストップ層上の層間誘電体(ILD)層であって、前記コンタクトエッチストップ層が、前記STI層パッドから前記ILD層を分離している、ILD層と、
基板を貫通する導通のための手段であって、前記半導体基板を貫通し、且つ前記STI層パッドの中に部分的であって、貫通せずに延在しており、前記導通手段の側壁を絶縁するための手段を含み、前記絶縁手段が、前記STI層パッドの中に延びるが前記STI層パッドを貫通しない部分を有している、手段とを含む、半導体デバイス。 - 前記絶縁手段の化学的な材料組成が、前記ILD層内の前記コンタクトの化学的な材料組成または前記STI層パッドの化学的組成と異なる、請求項6に記載の半導体デバイス。
- 前記絶縁手段が、ポリマー、窒化ケイ素、および酸化ケイ素からなる群から選択される材料を含む、請求項6に記載の半導体デバイス。
- 導通のための前記手段に結合された再配線層をさらに含む、請求項6に記載の半導体デバイス。
- 音楽プレーヤ、ビデオプレーヤ、娯楽ユニット、ナビゲーションデバイス、通信デバイス、携帯情報端末(PDA)、固定位置のデータユニット、およびコンピュータの少なくとも1つに組み込まれた、請求項6に記載の半導体デバイス。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201261669611P | 2012-07-09 | 2012-07-09 | |
US61/669,611 | 2012-07-09 | ||
US13/790,625 US9219032B2 (en) | 2012-07-09 | 2013-03-08 | Integrating through substrate vias from wafer backside layers of integrated circuits |
US13/790,625 | 2013-03-08 | ||
PCT/US2013/049686 WO2014011615A1 (en) | 2012-07-09 | 2013-07-09 | Integrating through substrate vias from wafer backside layers of integrated circuits |
Publications (3)
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JP2015527733A JP2015527733A (ja) | 2015-09-17 |
JP2015527733A5 JP2015527733A5 (ja) | 2016-04-28 |
JP6049877B2 true JP6049877B2 (ja) | 2016-12-21 |
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JP2015521717A Expired - Fee Related JP6049877B2 (ja) | 2012-07-09 | 2013-07-09 | 集積回路のウェハ裏面の層からの基板貫通ビアの統合 |
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US (1) | US9219032B2 (ja) |
EP (1) | EP2870628A1 (ja) |
JP (1) | JP6049877B2 (ja) |
KR (1) | KR101654794B1 (ja) |
CN (1) | CN104428887B (ja) |
TW (1) | TWI575652B (ja) |
WO (1) | WO2014011615A1 (ja) |
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JP4987928B2 (ja) | 2009-09-24 | 2012-08-01 | 株式会社東芝 | 半導体装置の製造方法 |
JP2011108690A (ja) * | 2009-11-12 | 2011-06-02 | Panasonic Corp | 半導体装置及びその製造方法 |
US8338939B2 (en) | 2010-07-12 | 2012-12-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | TSV formation processes using TSV-last approach |
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US20140008757A1 (en) | 2014-01-09 |
US9219032B2 (en) | 2015-12-22 |
CN104428887B (zh) | 2017-08-11 |
CN104428887A (zh) | 2015-03-18 |
TW201409612A (zh) | 2014-03-01 |
TWI575652B (zh) | 2017-03-21 |
JP2015527733A (ja) | 2015-09-17 |
KR101654794B1 (ko) | 2016-09-06 |
EP2870628A1 (en) | 2015-05-13 |
KR20150028845A (ko) | 2015-03-16 |
WO2014011615A1 (en) | 2014-01-16 |
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