JP2015527733A - 集積回路のウェハ裏面の層からの基板貫通ビアの統合 - Google Patents
集積回路のウェハ裏面の層からの基板貫通ビアの統合 Download PDFInfo
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Abstract
Description
本出願は、V.Ramachandranらの名義で2012年7月9日に出願された、米国仮特許出願第61/669,611号の利益を主張し、上記の仮出願の開示は、参照によりその全体が本明細書に明示的に組み込まれる。
102 半導体基板
104 キャリア基板
106 STI領域
108 ILD層
110 FEOL層
112 能動デバイス
114 能動デバイス
116 能動デバイス
120 MOL相互接続層
121 相互接続子
122 導電素子
123 導電素子
124 導電素子
125 導電素子
126 導電素子
128 相互接続子
130 STI層パッド
132 コンタクトエッチストップ層
140 局所的な相互接続子
200 断面図
250 TSVキャビティ
260 裏面絶縁層
300 断面図
370 絶縁ライナー層
400 断面図
470 側壁絶縁ライナー層、壁側絶縁層、側壁ライナー
500 断面図
600 断面図
652 バリアシード層
654 アンダーバンプメタル層
656 パッシベーション層
700 断面図
780 裏面TSV
800 断面図
890 レジスト
900 断面図
980 裏面TSV
982 RDL
1000 断面図
1100 ICデバイス
1300 断面図
1400 断面図
1500 断面図
1600 断面図
1700 断面図
1800 断面図
1900 断面図
2000 断面図
2100 断面図
2200 断面図
2300 断面図
2500 断面図
2600 断面図
2700 ワイヤレス通信システム
2720 遠隔ユニット
2725A ICデバイス
2725B ICデバイス
2725C ICデバイス
2730 遠隔ユニット
2740 基地局
2750 遠隔ユニット
2780 順方向リンク信号
2790 逆方向リンク信号
Claims (20)
- 半導体基板と、
前記半導体基板の表面上のシャロートレンチアイソレーション(STI)層パッドと、
コンタクトエッチストップ層上に形成された層間誘電体(ILD)層であって、前記コンタクトエッチストップ層が、前記半導体基板の前記表面上の前記STI層パッドから前記ILD層を分離している、ILD層と、
前記ILD層内の少なくとも1つのコンタクトと結合するように、前記STI層パッドおよび前記半導体基板を貫通するように延在している基板貫通ビアであって、導電性充填材料および側壁絶縁ライナー層を含み、前記側壁絶縁ライナー層が、場合によっては前記STI層パッドの中に延びるが前記STI層パッドを貫通しない部分を有する、基板貫通ビアとを含む、半導体ウェハ。 - 前記側壁絶縁ライナー層の化学的な材料組成が、前記ILD層内の前記少なくとも1つのコンタクトの化学的な材料組成または前記STI層パッドの化学的組成と異なる、請求項1に記載の半導体ウェハ。
- 前記側壁絶縁ライナー層が、ポリマー、窒化ケイ素、および酸化ケイ素からなる群から選択される材料で構成されている、請求項1に記載の半導体ウェハ。
- 前記基板貫通ビアの前記導電性充填材料に結合された再配線層をさらに含む、請求項1に記載の半導体ウェハ。
- 音楽プレーヤ、ビデオプレーヤ、娯楽ユニット、ナビゲーションデバイス、通信デバイス、携帯情報端末(PDA)、固定位置のデータユニット、およびコンピュータの少なくとも1つに組み込まれた、請求項1に記載の半導体ウェハ。
- 半導体基板の中に基板貫通ビア(TSV)を製造する方法であって、
基板貫通ビア(TSV)キャビティを前記半導体基板の中へとエッチングするステップであって、前記TSVキャビティが、前記半導体基板内のシャロートレンチアイソレーション(STI)層パッドに延在している、ステップと、
前記STI層パッドを貫通して相互接続子/コンタクト上の膜までエッチングするステップと、
前記TSVキャビティ内に絶縁ライナー層を堆積させるステップであって、前記絶縁ライナー層が前記相互接続子/コンタクト上の前記膜の材料とは異なる材料を含んでいる、ステップと、
前記相互接続子/コンタクト上の前記膜および前記絶縁ライナー層の一部分を貫通するようにエッチングして、前記相互接続子/コンタクトを露出させるステップとを含む、方法。 - 前記基板貫通ビアをエッチングするステップがさらに、前記半導体基板の中へと、かつ前記STI層パッドの中へと、しかし前記STI層パッドを貫通しないようにエッチングするステップを含む、請求項6に記載の方法。
- 側壁絶縁ライナー層が、場合によっては前記STI層パッドの中に延びるが前記STI層パッドを貫通しない部分を含むように、前記STI層パッドを貫通するようにエッチングする前に前記絶縁ライナー層を堆積させるステップが実行される、請求項7に記載の方法。
- 前記膜を貫通するようにエッチングするステップが、前記TSVキャビティの側壁上の前記絶縁ライナー層の少なくとも前記部分を損傷させない、方向性エッチングを実行するステップを含む、請求項6に記載の方法。
- 前記TSVキャビティの側壁上の前記絶縁ライナー層上にフォトレジストを堆積させるステップをさらに含み、前記フォトレジストが、前記相互接続子/コンタクト上の前記膜および前記絶縁ライナー層の保護されていない部分を貫通するようにエッチングして前記相互接続子/コンタクトを露出させるときに、前記ビアキャビティの側壁上の前記絶縁ライナー層を保護している、請求項9に記載の方法。
- 前記絶縁ライナー層を堆積させた後で開口をパターニングするステップをさらに含み、前記開口が、前記相互接続子/コンタクト上の前記膜を貫通するようにエッチングして前記相互接続子/コンタクトを露出させるときに使用され、
前記絶縁ライナー層を堆積させるステップが前記TSVキャビティを充填するステップを含む、請求項10に記載の方法。 - 前記TSVキャビティを導電性材料によって充填するステップをさらに含み、前記導電性材料が前記相互接続子/コンタクトと電気的に結合する、請求項6に記載の方法。
- 前記TSVキャビティを充填する前にレジストをパターニングして、前記TSVの再配線層を画定するステップをさらに含む、請求項12に記載の方法。
- 前記膜を貫通するようにエッチングする前記ステップが、ウェットエッチングを実行するステップを含む、請求項6に記載の方法。
- 音楽プレーヤ、ビデオプレーヤ、娯楽ユニット、ナビゲーションデバイス、通信デバイス、携帯情報端末(PDA)、固定位置のデータユニット、およびコンピュータの少なくとも1つに前記半導体基板を組み込むステップをさらに含む、請求項6に記載の方法。
- 半導体基板と、
前記半導体基板の表面上のシャロートレンチアイソレーション(STI)層パッドと、
コンタクトエッチストップ層上に形成された層間誘電体(ILD)層であって、前記コンタクトエッチストップ層が、前記半導体基板の前記表面上の前記STI層パッドから前記ILD層を分離している、ILD層と、
基板を貫通する導通のための手段であって、前記ILD層内の少なくとも1つのコンタクトと結合するように、前記STI層パッドおよび前記半導体基板を貫通するように延在しており、前記導通手段の側壁を絶縁するための手段を含み、前記絶縁手段が、場合によっては前記STI層パッドの中に延びるが前記STI層パッドを貫通しない部分を有している、手段とを含む、半導体ウェハ。 - 前記絶縁手段の化学的な材料組成が、前記ILD層内の前記コンタクトの化学的な材料組成または前記STI層パッドの化学的組成と異なる、請求項16に記載の半導体ウェハ。
- 前記絶縁手段が、ポリマー、窒化ケイ素、および酸化ケイ素からなる群から選択される材料を含む、請求項16に記載の半導体ウェハ。
- 導通のための前記手段に結合された再配線層をさらに含む、請求項16に記載の半導体ウェハ。
- 音楽プレーヤ、ビデオプレーヤ、娯楽ユニット、ナビゲーションデバイス、通信デバイス、携帯情報端末(PDA)、固定位置のデータユニット、およびコンピュータの少なくとも1つに組み込まれた、請求項16に記載の半導体ウェハ。
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US201261669611P | 2012-07-09 | 2012-07-09 | |
US61/669,611 | 2012-07-09 | ||
US13/790,625 | 2013-03-08 | ||
US13/790,625 US9219032B2 (en) | 2012-07-09 | 2013-03-08 | Integrating through substrate vias from wafer backside layers of integrated circuits |
PCT/US2013/049686 WO2014011615A1 (en) | 2012-07-09 | 2013-07-09 | Integrating through substrate vias from wafer backside layers of integrated circuits |
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JP2015527733A true JP2015527733A (ja) | 2015-09-17 |
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JP6049877B2 JP6049877B2 (ja) | 2016-12-21 |
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JP (1) | JP6049877B2 (ja) |
KR (1) | KR101654794B1 (ja) |
CN (1) | CN104428887B (ja) |
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EP2870628A1 (en) | 2015-05-13 |
KR101654794B1 (ko) | 2016-09-06 |
TW201409612A (zh) | 2014-03-01 |
WO2014011615A1 (en) | 2014-01-16 |
CN104428887B (zh) | 2017-08-11 |
KR20150028845A (ko) | 2015-03-16 |
US9219032B2 (en) | 2015-12-22 |
CN104428887A (zh) | 2015-03-18 |
US20140008757A1 (en) | 2014-01-09 |
JP6049877B2 (ja) | 2016-12-21 |
TWI575652B (zh) | 2017-03-21 |
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