FR2930840B1 - Procede de reprise de contact sur un circuit eclaire par la face arriere - Google Patents

Procede de reprise de contact sur un circuit eclaire par la face arriere

Info

Publication number
FR2930840B1
FR2930840B1 FR0852950A FR0852950A FR2930840B1 FR 2930840 B1 FR2930840 B1 FR 2930840B1 FR 0852950 A FR0852950 A FR 0852950A FR 0852950 A FR0852950 A FR 0852950A FR 2930840 B1 FR2930840 B1 FR 2930840B1
Authority
FR
France
Prior art keywords
light circuit
facing light
recovering
contact
recovering contact
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0852950A
Other languages
English (en)
Other versions
FR2930840A1 (fr
Inventor
Francois Roy
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics Crolles 2 SAS
Original Assignee
STMicroelectronics Crolles 2 SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics Crolles 2 SAS filed Critical STMicroelectronics Crolles 2 SAS
Priority to FR0852950A priority Critical patent/FR2930840B1/fr
Priority to US12/431,439 priority patent/US8053353B2/en
Publication of FR2930840A1 publication Critical patent/FR2930840A1/fr
Application granted granted Critical
Publication of FR2930840B1 publication Critical patent/FR2930840B1/fr
Priority to US13/239,136 priority patent/US20120007243A1/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14689—MOS based technologies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14636—Interconnect structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1464—Back illuminated imager structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
FR0852950A 2008-04-30 2008-04-30 Procede de reprise de contact sur un circuit eclaire par la face arriere Expired - Fee Related FR2930840B1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
FR0852950A FR2930840B1 (fr) 2008-04-30 2008-04-30 Procede de reprise de contact sur un circuit eclaire par la face arriere
US12/431,439 US8053353B2 (en) 2008-04-30 2009-04-28 Method of making connections in a back-lit circuit
US13/239,136 US20120007243A1 (en) 2008-04-30 2011-09-21 Method of making connections in a back-lit circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0852950A FR2930840B1 (fr) 2008-04-30 2008-04-30 Procede de reprise de contact sur un circuit eclaire par la face arriere

Publications (2)

Publication Number Publication Date
FR2930840A1 FR2930840A1 (fr) 2009-11-06
FR2930840B1 true FR2930840B1 (fr) 2010-08-13

Family

ID=40220051

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0852950A Expired - Fee Related FR2930840B1 (fr) 2008-04-30 2008-04-30 Procede de reprise de contact sur un circuit eclaire par la face arriere

Country Status (2)

Country Link
US (2) US8053353B2 (fr)
FR (1) FR2930840B1 (fr)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20090128899A (ko) 2008-06-11 2009-12-16 크로스텍 캐피탈, 엘엘씨 후면 조사 이미지 센서 및 그 제조방법
FR2955202B1 (fr) * 2009-12-10 2012-08-03 St Microelectronics Crolles 2 Dispositif microelectronique integre avec liaisons traversantes.
US9165970B2 (en) * 2011-02-16 2015-10-20 Taiwan Semiconductor Manufacturing Company, Ltd. Back side illuminated image sensor having isolated bonding pads
US9018730B2 (en) * 2011-04-05 2015-04-28 Stmicroelectronics S.R.L. Microstructure device comprising a face to face electromagnetic near field coupling between stacked device portions and method of forming the device
US8373282B2 (en) * 2011-06-16 2013-02-12 Taiwan Semiconductor Manufacturing Company, Ltd. Wafer level chip scale package with reduced stress on solder balls
US8502389B2 (en) * 2011-08-08 2013-08-06 Taiwan Semiconductor Manufacturing Company, Ltd. CMOS image sensor and method for forming the same
JP5802534B2 (ja) * 2011-12-06 2015-10-28 株式会社東芝 半導体装置
EP2648214B1 (fr) * 2012-04-05 2019-06-12 ams AG Procédés de production d'un dispositif semi-conducteur avec interconnexion traversant le substrat
US9257392B2 (en) * 2012-04-11 2016-02-09 Mediatek Inc. Semiconductor package with through silicon via interconnect
US9275933B2 (en) * 2012-06-19 2016-03-01 United Microelectronics Corp. Semiconductor device
US9219032B2 (en) * 2012-07-09 2015-12-22 Qualcomm Incorporated Integrating through substrate vias from wafer backside layers of integrated circuits
US10977426B2 (en) * 2013-03-07 2021-04-13 Smugmug, Inc. Method of designing a customizable website
US9614000B2 (en) 2014-05-15 2017-04-04 Taiwan Semiconductor Manufacturing Company, Ltd. Biased backside illuminated sensor shield structure
FR3037720A1 (fr) * 2015-06-19 2016-12-23 St Microelectronics Crolles 2 Sas Composant electronique et son procede de fabrication
JP2017183407A (ja) * 2016-03-29 2017-10-05 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US10276524B2 (en) * 2016-05-13 2019-04-30 Taiwan Semiconductor Manufacturing Co., Ltd. Bond pad structure for bonding improvement
CN107887285A (zh) * 2016-09-30 2018-04-06 中芯国际集成电路制造(北京)有限公司 焊垫结构及其制造方法、及图像传感器
CN107644841B (zh) * 2017-08-31 2019-01-01 长江存储科技有限责任公司 用于三维存储器的晶圆三维集成引线工艺及其结构
KR102520639B1 (ko) 2018-05-02 2023-04-11 삼성디스플레이 주식회사 입력 감지 장치 및 이를 포함하는 표시 장치
FR3099848B1 (fr) * 2019-08-09 2021-09-24 Commissariat Energie Atomique Procédé de fabrication de vias traversant un substrat
US11217547B2 (en) * 2019-09-03 2022-01-04 Taiwan Semiconductor Manufacturing Company, Ltd. Bond pad structure with reduced step height and increased electrical isolation
US20220231067A1 (en) * 2021-01-18 2022-07-21 Taiwan Semiconductor Manufacturing Co., Ltd. Stilted pad structure

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06275803A (ja) * 1993-03-18 1994-09-30 Hitachi Ltd 半導体装置及びその製造方法
JPH08293523A (ja) * 1995-02-21 1996-11-05 Seiko Epson Corp 半導体装置およびその製造方法
US6656828B1 (en) * 1999-01-22 2003-12-02 Hitachi, Ltd. Method of forming bump electrodes
JP2001267592A (ja) * 2000-03-14 2001-09-28 Nikon Corp 半導体装置の製造方法、背面入射型受光装置の製造方法、半導体装置、及び背面入射型受光装置
JP4046069B2 (ja) * 2003-11-17 2008-02-13 ソニー株式会社 固体撮像素子及び固体撮像素子の製造方法
JP4534484B2 (ja) * 2003-12-26 2010-09-01 ソニー株式会社 固体撮像素子及びその製造方法
JP4242336B2 (ja) * 2004-02-05 2009-03-25 パナソニック株式会社 半導体装置
JP4373866B2 (ja) * 2004-07-16 2009-11-25 三洋電機株式会社 半導体装置の製造方法
JP4517843B2 (ja) * 2004-12-10 2010-08-04 エルピーダメモリ株式会社 半導体装置
KR100807214B1 (ko) * 2005-02-14 2008-03-03 삼성전자주식회사 향상된 감도를 갖는 이미지 센서 및 그 제조 방법
US7285477B1 (en) * 2006-05-16 2007-10-23 International Business Machines Corporation Dual wired integrated circuit chips
US7679180B2 (en) * 2006-11-07 2010-03-16 Taiwan Semiconductor Manufacturing Co., Ltd. Bond pad design to minimize dielectric cracking
FR2910705B1 (fr) * 2006-12-20 2009-02-27 E2V Semiconductors Soc Par Act Structure de plots de connexion pour capteur d'image sur substrat aminci
US20080246152A1 (en) * 2007-04-04 2008-10-09 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device with bonding pad

Also Published As

Publication number Publication date
US20090309232A1 (en) 2009-12-17
FR2930840A1 (fr) 2009-11-06
US8053353B2 (en) 2011-11-08
US20120007243A1 (en) 2012-01-12

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Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20131231