JP6041095B2 - 銅をケミカルメカニカルポリッシングするための方法 - Google Patents

銅をケミカルメカニカルポリッシングするための方法 Download PDF

Info

Publication number
JP6041095B2
JP6041095B2 JP2012173340A JP2012173340A JP6041095B2 JP 6041095 B2 JP6041095 B2 JP 6041095B2 JP 2012173340 A JP2012173340 A JP 2012173340A JP 2012173340 A JP2012173340 A JP 2012173340A JP 6041095 B2 JP6041095 B2 JP 6041095B2
Authority
JP
Japan
Prior art keywords
chemical mechanical
mechanical polishing
weight
substrate
polishing composition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2012173340A
Other languages
English (en)
Japanese (ja)
Other versions
JP2013042132A5 (https=
JP2013042132A (ja
Inventor
チェンチュ・イェ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
DuPont Electronic Materials Holding Inc
Original Assignee
Rohm and Haas Electronic Materials CMP Holdings Inc
DuPont Electronic Materials Holding Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm and Haas Electronic Materials CMP Holdings Inc, DuPont Electronic Materials Holding Inc filed Critical Rohm and Haas Electronic Materials CMP Holdings Inc
Publication of JP2013042132A publication Critical patent/JP2013042132A/ja
Publication of JP2013042132A5 publication Critical patent/JP2013042132A5/ja
Application granted granted Critical
Publication of JP6041095B2 publication Critical patent/JP6041095B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/062—Manufacture or treatment of conductive parts of the interconnections by smoothing of conductive parts, e.g. by planarisation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
JP2012173340A 2011-08-15 2012-08-03 銅をケミカルメカニカルポリッシングするための方法 Expired - Fee Related JP6041095B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/209,864 2011-08-15
US13/209,864 US20130045599A1 (en) 2011-08-15 2011-08-15 Method for chemical mechanical polishing copper

Publications (3)

Publication Number Publication Date
JP2013042132A JP2013042132A (ja) 2013-02-28
JP2013042132A5 JP2013042132A5 (https=) 2015-09-10
JP6041095B2 true JP6041095B2 (ja) 2016-12-07

Family

ID=47625346

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012173340A Expired - Fee Related JP6041095B2 (ja) 2011-08-15 2012-08-03 銅をケミカルメカニカルポリッシングするための方法

Country Status (7)

Country Link
US (1) US20130045599A1 (https=)
JP (1) JP6041095B2 (https=)
KR (1) KR101945221B1 (https=)
CN (1) CN102950537B (https=)
DE (1) DE102012015824A1 (https=)
FR (1) FR2979071B1 (https=)
TW (1) TWI594310B (https=)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101931930B1 (ko) * 2011-12-21 2018-12-24 바스프 에스이 Cmp 조성물의 제조 방법 및 그의 적용
US9299585B2 (en) * 2014-07-28 2016-03-29 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method for chemical mechanical polishing substrates containing ruthenium and copper
CN106916536B (zh) * 2015-12-25 2021-04-20 安集微电子（上海）有限公司 一种碱性化学机械抛光液
CN107145614B (zh) * 2016-03-01 2020-06-30 中国科学院微电子研究所 一种cmp工艺仿真方法及仿真系统
US10377921B2 (en) * 2017-09-21 2019-08-13 Rohm and Haas Electronics Materials CMP Holdings, Inc. Chemical mechanical polishing method for cobalt
US20200095502A1 (en) * 2018-09-26 2020-03-26 Versum Materials Us, Llc High Oxide VS Nitride Selectivity, Low And Uniform Oxide Trench Dishing In Shallow Trench Isolation(STI) Chemical Mechanical Planarization Polishing(CMP)
WO2020091242A1 (ko) * 2018-10-31 2020-05-07 영창케미칼 주식회사 구리 배리어층 연마용 슬러리 조성물
JP7803851B2 (ja) * 2019-09-04 2026-01-21 シーエムシー マテリアルズ リミティド ライアビリティ カンパニー ポリシリコンｃｍｐ用組成物および方法
JP7409899B2 (ja) * 2020-02-18 2024-01-09 株式会社フジミインコーポレーテッド 研磨用組成物、研磨方法、および半導体基板の製造方法
JP7519862B2 (ja) * 2020-10-05 2024-07-22 花王株式会社 酸化珪素膜用研磨液組成物
CN114975234A (zh) * 2021-02-24 2022-08-30 中国科学院微电子研究所 一种半导体器件的制造方法
US20240342856A1 (en) * 2023-04-17 2024-10-17 Taiwan Semiconductor Manufacturing Co., Ltd. Methods of Forming an Abrasive Slurry and Methods for Chemical-Mechanical Polishing

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6435944B1 (en) 1999-10-27 2002-08-20 Applied Materials, Inc. CMP slurry for planarizing metals
US6740591B1 (en) * 2000-11-16 2004-05-25 Intel Corporation Slurry and method for chemical mechanical polishing of copper
US20050090104A1 (en) * 2003-10-27 2005-04-28 Kai Yang Slurry compositions for chemical mechanical polishing of copper and barrier films
KR100645957B1 (ko) 2004-10-26 2006-11-14 삼성코닝 주식회사 Ｃｍｐ용 수성 슬러리 조성물
CN1900206B (zh) * 2005-07-21 2011-01-05 安集微电子（上海）有限公司 化学机械抛光液及其用途
TWI385226B (zh) * 2005-09-08 2013-02-11 羅門哈斯電子材料Ｃｍｐ控股公司 用於移除聚合物阻障之研磨漿液
US20080148652A1 (en) * 2006-12-21 2008-06-26 Junaid Ahmed Siddiqui Compositions for chemical mechanical planarization of copper
US20090031636A1 (en) * 2007-08-03 2009-02-05 Qianqiu Ye Polymeric barrier removal polishing slurry
KR101202720B1 (ko) * 2008-02-29 2012-11-19 주식회사 엘지화학 화학적 기계적 연마용 수계 슬러리 조성물 및 화학적 기계적 연마 방법
KR101084676B1 (ko) * 2008-12-03 2011-11-22 주식회사 엘지화학 1차 화학적 기계적 연마용 슬러리 조성물 및 화학적 기계적 연마 방법
US20100159807A1 (en) * 2008-12-22 2010-06-24 Jinru Bian Polymeric barrier removal polishing slurry

Also Published As

Publication number Publication date
KR20130020585A (ko) 2013-02-27
CN102950537B (zh) 2016-06-01
TW201320173A (zh) 2013-05-16
DE102012015824A1 (de) 2013-02-21
US20130045599A1 (en) 2013-02-21
TWI594310B (zh) 2017-08-01
JP2013042132A (ja) 2013-02-28
KR101945221B1 (ko) 2019-02-07
CN102950537A (zh) 2013-03-06
FR2979071B1 (fr) 2016-08-26
FR2979071A1 (fr) 2013-02-22

Similar Documents

Publication Publication Date Title
JP6041095B2 (ja) 銅をケミカルメカニカルポリッシングするための方法
US7785487B2 (en) Polymeric barrier removal polishing slurry
JP4774219B2 (ja) ケミカルメカニカルプラナリゼーションのための多工程研磨溶液
JP6137793B2 (ja) タングステンをケミカルメカニカルポリッシングするための方法
TWI565771B (zh) 化學機械硏磨組成物及硏磨鎢之方法
TWI458817B (zh) 化學機械研磨組成物及其相關方法
US8435896B2 (en) Stable, concentratable chemical mechanical polishing composition and methods relating thereto
TWI447188B (zh) 低沾污研磨組成物
JP7766391B2 (ja) 研磨用組成物
KR20090014110A (ko) 선택적 배리어 연마 슬러리
US20110318928A1 (en) Polymeric Barrier Removal Polishing Slurry
TW201028461A (en) Polymeric barrier removal polishing slurry
TWI487760B (zh) 含銅之圖案化晶圓之研磨
JP2010503233A (ja) オニウム含有ｃｍｐ組成物、およびそれらの使用方法
JP2005167219A (ja) バリヤ除去のための組成物及び方法
JP4027929B2 (ja) 半導体基板用研磨液組成物
JP2012199531A (ja) 安定した濃縮可能な水溶性セルロースフリーのケミカルメカニカル研磨組成物
KR102808842B1 (ko) 텅스텐용 화학 기계적 연마 조성물 및 방법
JP6538464B2 (ja) ルテニウム及び銅を含有する基板を化学的機械的研磨するための方法
KR20190057084A (ko) 텅스텐을 위한 화학 기계적 연마 방법
JP7608718B2 (ja) 研磨液及び研磨方法
JP2007227943A (ja) 半導体基板用研磨液組成物

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20150716

A524 Written submission of copy of amendment under article 19 pct

Free format text: JAPANESE INTERMEDIATE CODE: A524

Effective date: 20150716

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20150716

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20160622

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20160628

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20160915

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20161011

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20161025

R150 Certificate of patent or registration of utility model

Ref document number: 6041095

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

LAPS Cancellation because of no payment of annual fees