JP2013042132A5 - - Google Patents

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Publication number
JP2013042132A5
JP2013042132A5 JP2012173340A JP2012173340A JP2013042132A5 JP 2013042132 A5 JP2013042132 A5 JP 2013042132A5 JP 2012173340 A JP2012173340 A JP 2012173340A JP 2012173340 A JP2012173340 A JP 2012173340A JP 2013042132 A5 JP2013042132 A5 JP 2013042132A5
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JP
Japan
Prior art keywords
weight
chemical mechanical
mechanical polishing
guanidine
substrate
Prior art date
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Granted
Application number
JP2012173340A
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English (en)
Japanese (ja)
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JP6041095B2 (ja
JP2013042132A (ja
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Publication date
Priority claimed from US13/209,864 external-priority patent/US20130045599A1/en
Application filed filed Critical
Publication of JP2013042132A publication Critical patent/JP2013042132A/ja
Publication of JP2013042132A5 publication Critical patent/JP2013042132A5/ja
Application granted granted Critical
Publication of JP6041095B2 publication Critical patent/JP6041095B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2012173340A 2011-08-15 2012-08-03 銅をケミカルメカニカルポリッシングするための方法 Expired - Fee Related JP6041095B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/209,864 2011-08-15
US13/209,864 US20130045599A1 (en) 2011-08-15 2011-08-15 Method for chemical mechanical polishing copper

Publications (3)

Publication Number Publication Date
JP2013042132A JP2013042132A (ja) 2013-02-28
JP2013042132A5 true JP2013042132A5 (https=) 2015-09-10
JP6041095B2 JP6041095B2 (ja) 2016-12-07

Family

ID=47625346

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012173340A Expired - Fee Related JP6041095B2 (ja) 2011-08-15 2012-08-03 銅をケミカルメカニカルポリッシングするための方法

Country Status (7)

Country Link
US (1) US20130045599A1 (https=)
JP (1) JP6041095B2 (https=)
KR (1) KR101945221B1 (https=)
CN (1) CN102950537B (https=)
DE (1) DE102012015824A1 (https=)
FR (1) FR2979071B1 (https=)
TW (1) TWI594310B (https=)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101931930B1 (ko) * 2011-12-21 2018-12-24 바스프 에스이 Cmp 조성물의 제조 방법 및 그의 적용
US9299585B2 (en) * 2014-07-28 2016-03-29 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method for chemical mechanical polishing substrates containing ruthenium and copper
CN106916536B (zh) * 2015-12-25 2021-04-20 安集微电子(上海)有限公司 一种碱性化学机械抛光液
CN107145614B (zh) * 2016-03-01 2020-06-30 中国科学院微电子研究所 一种cmp工艺仿真方法及仿真系统
US10377921B2 (en) * 2017-09-21 2019-08-13 Rohm and Haas Electronics Materials CMP Holdings, Inc. Chemical mechanical polishing method for cobalt
US20200095502A1 (en) * 2018-09-26 2020-03-26 Versum Materials Us, Llc High Oxide VS Nitride Selectivity, Low And Uniform Oxide Trench Dishing In Shallow Trench Isolation(STI) Chemical Mechanical Planarization Polishing(CMP)
WO2020091242A1 (ko) * 2018-10-31 2020-05-07 영창케미칼 주식회사 구리 배리어층 연마용 슬러리 조성물
JP7803851B2 (ja) * 2019-09-04 2026-01-21 シーエムシー マテリアルズ リミティド ライアビリティ カンパニー ポリシリコンcmp用組成物および方法
JP7409899B2 (ja) * 2020-02-18 2024-01-09 株式会社フジミインコーポレーテッド 研磨用組成物、研磨方法、および半導体基板の製造方法
JP7519862B2 (ja) * 2020-10-05 2024-07-22 花王株式会社 酸化珪素膜用研磨液組成物
CN114975234A (zh) * 2021-02-24 2022-08-30 中国科学院微电子研究所 一种半导体器件的制造方法
US20240342856A1 (en) * 2023-04-17 2024-10-17 Taiwan Semiconductor Manufacturing Co., Ltd. Methods of Forming an Abrasive Slurry and Methods for Chemical-Mechanical Polishing

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6435944B1 (en) 1999-10-27 2002-08-20 Applied Materials, Inc. CMP slurry for planarizing metals
US6740591B1 (en) * 2000-11-16 2004-05-25 Intel Corporation Slurry and method for chemical mechanical polishing of copper
US20050090104A1 (en) * 2003-10-27 2005-04-28 Kai Yang Slurry compositions for chemical mechanical polishing of copper and barrier films
KR100645957B1 (ko) 2004-10-26 2006-11-14 삼성코닝 주식회사 Cmp용 수성 슬러리 조성물
CN1900206B (zh) * 2005-07-21 2011-01-05 安集微电子(上海)有限公司 化学机械抛光液及其用途
TWI385226B (zh) * 2005-09-08 2013-02-11 羅門哈斯電子材料Cmp控股公司 用於移除聚合物阻障之研磨漿液
US20080148652A1 (en) * 2006-12-21 2008-06-26 Junaid Ahmed Siddiqui Compositions for chemical mechanical planarization of copper
US20090031636A1 (en) * 2007-08-03 2009-02-05 Qianqiu Ye Polymeric barrier removal polishing slurry
KR101202720B1 (ko) * 2008-02-29 2012-11-19 주식회사 엘지화학 화학적 기계적 연마용 수계 슬러리 조성물 및 화학적 기계적 연마 방법
KR101084676B1 (ko) * 2008-12-03 2011-11-22 주식회사 엘지화학 1차 화학적 기계적 연마용 슬러리 조성물 및 화학적 기계적 연마 방법
US20100159807A1 (en) * 2008-12-22 2010-06-24 Jinru Bian Polymeric barrier removal polishing slurry

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