CN102950537B - 用来化学机械抛光铜的方法 - Google Patents

用来化学机械抛光铜的方法 Download PDF

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Publication number
CN102950537B
CN102950537B CN201210289359.6A CN201210289359A CN102950537B CN 102950537 B CN102950537 B CN 102950537B CN 201210289359 A CN201210289359 A CN 201210289359A CN 102950537 B CN102950537 B CN 102950537B
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CN
China
Prior art keywords
weight
mechanical polishing
chemical mechanical
chemical
copper
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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CN201210289359.6A
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English (en)
Chinese (zh)
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CN102950537A (zh
Inventor
叶倩萩
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ROHM AND HAAS ELECTRONIC MATER
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ROHM AND HAAS ELECTRONIC MATER
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Publication of CN102950537A publication Critical patent/CN102950537A/zh
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/062—Manufacture or treatment of conductive parts of the interconnections by smoothing of conductive parts, e.g. by planarisation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
CN201210289359.6A 2011-08-15 2012-08-14 用来化学机械抛光铜的方法 Expired - Fee Related CN102950537B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/209,864 2011-08-15
US13/209,864 US20130045599A1 (en) 2011-08-15 2011-08-15 Method for chemical mechanical polishing copper

Publications (2)

Publication Number Publication Date
CN102950537A CN102950537A (zh) 2013-03-06
CN102950537B true CN102950537B (zh) 2016-06-01

Family

ID=47625346

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201210289359.6A Expired - Fee Related CN102950537B (zh) 2011-08-15 2012-08-14 用来化学机械抛光铜的方法

Country Status (7)

Country Link
US (1) US20130045599A1 (https=)
JP (1) JP6041095B2 (https=)
KR (1) KR101945221B1 (https=)
CN (1) CN102950537B (https=)
DE (1) DE102012015824A1 (https=)
FR (1) FR2979071B1 (https=)
TW (1) TWI594310B (https=)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101931930B1 (ko) * 2011-12-21 2018-12-24 바스프 에스이 Cmp 조성물의 제조 방법 및 그의 적용
US9299585B2 (en) * 2014-07-28 2016-03-29 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method for chemical mechanical polishing substrates containing ruthenium and copper
CN106916536B (zh) * 2015-12-25 2021-04-20 安集微电子（上海）有限公司 一种碱性化学机械抛光液
CN107145614B (zh) * 2016-03-01 2020-06-30 中国科学院微电子研究所 一种cmp工艺仿真方法及仿真系统
US10377921B2 (en) * 2017-09-21 2019-08-13 Rohm and Haas Electronics Materials CMP Holdings, Inc. Chemical mechanical polishing method for cobalt
US20200095502A1 (en) * 2018-09-26 2020-03-26 Versum Materials Us, Llc High Oxide VS Nitride Selectivity, Low And Uniform Oxide Trench Dishing In Shallow Trench Isolation(STI) Chemical Mechanical Planarization Polishing(CMP)
WO2020091242A1 (ko) * 2018-10-31 2020-05-07 영창케미칼 주식회사 구리 배리어층 연마용 슬러리 조성물
JP7803851B2 (ja) * 2019-09-04 2026-01-21 シーエムシー マテリアルズ リミティド ライアビリティ カンパニー ポリシリコンｃｍｐ用組成物および方法
JP7409899B2 (ja) * 2020-02-18 2024-01-09 株式会社フジミインコーポレーテッド 研磨用組成物、研磨方法、および半導体基板の製造方法
JP7519862B2 (ja) * 2020-10-05 2024-07-22 花王株式会社 酸化珪素膜用研磨液組成物
CN114975234A (zh) * 2021-02-24 2022-08-30 中国科学院微电子研究所 一种半导体器件的制造方法
US20240342856A1 (en) * 2023-04-17 2024-10-17 Taiwan Semiconductor Manufacturing Co., Ltd. Methods of Forming an Abrasive Slurry and Methods for Chemical-Mechanical Polishing

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1494740A (zh) * 2000-11-16 2004-05-05 ض� 铜的化学机械抛光所用的浆料和方法
CN1900206A (zh) * 2005-07-21 2007-01-24 安集微电子（上海）有限公司 化学机械抛光液及其用途
CN1927975A (zh) * 2005-09-08 2007-03-14 罗门哈斯电子材料Cmp控股股份有限公司 可除去聚合物阻挡层的抛光浆液
CN101240147A (zh) * 2006-12-21 2008-08-13 杜邦纳米材料气体产品有限公司 用于铜的化学机械平坦化的组合物
CN101679810A (zh) * 2008-02-29 2010-03-24 株式会社Lg化学 化学机械抛光用含水浆液组合物及化学机械抛光方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6435944B1 (en) 1999-10-27 2002-08-20 Applied Materials, Inc. CMP slurry for planarizing metals
US20050090104A1 (en) * 2003-10-27 2005-04-28 Kai Yang Slurry compositions for chemical mechanical polishing of copper and barrier films
KR100645957B1 (ko) 2004-10-26 2006-11-14 삼성코닝 주식회사 Ｃｍｐ용 수성 슬러리 조성물
US20090031636A1 (en) * 2007-08-03 2009-02-05 Qianqiu Ye Polymeric barrier removal polishing slurry
KR101084676B1 (ko) * 2008-12-03 2011-11-22 주식회사 엘지화학 1차 화학적 기계적 연마용 슬러리 조성물 및 화학적 기계적 연마 방법
US20100159807A1 (en) * 2008-12-22 2010-06-24 Jinru Bian Polymeric barrier removal polishing slurry

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1494740A (zh) * 2000-11-16 2004-05-05 ض� 铜的化学机械抛光所用的浆料和方法
CN1900206A (zh) * 2005-07-21 2007-01-24 安集微电子（上海）有限公司 化学机械抛光液及其用途
CN1927975A (zh) * 2005-09-08 2007-03-14 罗门哈斯电子材料Cmp控股股份有限公司 可除去聚合物阻挡层的抛光浆液
CN101240147A (zh) * 2006-12-21 2008-08-13 杜邦纳米材料气体产品有限公司 用于铜的化学机械平坦化的组合物
CN101679810A (zh) * 2008-02-29 2010-03-24 株式会社Lg化学 化学机械抛光用含水浆液组合物及化学机械抛光方法

Also Published As

Publication number Publication date
KR20130020585A (ko) 2013-02-27
TW201320173A (zh) 2013-05-16
DE102012015824A1 (de) 2013-02-21
US20130045599A1 (en) 2013-02-21
TWI594310B (zh) 2017-08-01
JP6041095B2 (ja) 2016-12-07
JP2013042132A (ja) 2013-02-28
KR101945221B1 (ko) 2019-02-07
CN102950537A (zh) 2013-03-06
FR2979071B1 (fr) 2016-08-26
FR2979071A1 (fr) 2013-02-22

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