KR101945221B1 - 구리의 화학 기계적 연마 방법 - Google Patents

구리의 화학 기계적 연마 방법 Download PDF

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Publication number
KR101945221B1
KR101945221B1 KR1020120089008A KR20120089008A KR101945221B1 KR 101945221 B1 KR101945221 B1 KR 101945221B1 KR 1020120089008 A KR1020120089008 A KR 1020120089008A KR 20120089008 A KR20120089008 A KR 20120089008A KR 101945221 B1 KR101945221 B1 KR 101945221B1
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KR
South Korea
Prior art keywords
chemical mechanical
mechanical polishing
substrate
polishing composition
copper
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020120089008A
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English (en)
Korean (ko)
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KR20130020585A (ko
Inventor
퀴안큐 예
Original Assignee
롬 앤드 하스 일렉트로닉 머티리얼스 씨엠피 홀딩스 인코포레이티드
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Publication date
Application filed by 롬 앤드 하스 일렉트로닉 머티리얼스 씨엠피 홀딩스 인코포레이티드 filed Critical 롬 앤드 하스 일렉트로닉 머티리얼스 씨엠피 홀딩스 인코포레이티드
Publication of KR20130020585A publication Critical patent/KR20130020585A/ko
Application granted granted Critical
Publication of KR101945221B1 publication Critical patent/KR101945221B1/ko
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/062—Manufacture or treatment of conductive parts of the interconnections by smoothing of conductive parts, e.g. by planarisation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
KR1020120089008A 2011-08-15 2012-08-14 구리의 화학 기계적 연마 방법 Expired - Fee Related KR101945221B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/209,864 2011-08-15
US13/209,864 US20130045599A1 (en) 2011-08-15 2011-08-15 Method for chemical mechanical polishing copper

Publications (2)

Publication Number Publication Date
KR20130020585A KR20130020585A (ko) 2013-02-27
KR101945221B1 true KR101945221B1 (ko) 2019-02-07

Family

ID=47625346

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020120089008A Expired - Fee Related KR101945221B1 (ko) 2011-08-15 2012-08-14 구리의 화학 기계적 연마 방법

Country Status (7)

Country Link
US (1) US20130045599A1 (https=)
JP (1) JP6041095B2 (https=)
KR (1) KR101945221B1 (https=)
CN (1) CN102950537B (https=)
DE (1) DE102012015824A1 (https=)
FR (1) FR2979071B1 (https=)
TW (1) TWI594310B (https=)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101931930B1 (ko) * 2011-12-21 2018-12-24 바스프 에스이 Cmp 조성물의 제조 방법 및 그의 적용
US9299585B2 (en) * 2014-07-28 2016-03-29 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method for chemical mechanical polishing substrates containing ruthenium and copper
CN106916536B (zh) * 2015-12-25 2021-04-20 安集微电子（上海）有限公司 一种碱性化学机械抛光液
CN107145614B (zh) * 2016-03-01 2020-06-30 中国科学院微电子研究所 一种cmp工艺仿真方法及仿真系统
US10377921B2 (en) * 2017-09-21 2019-08-13 Rohm and Haas Electronics Materials CMP Holdings, Inc. Chemical mechanical polishing method for cobalt
US20200095502A1 (en) * 2018-09-26 2020-03-26 Versum Materials Us, Llc High Oxide VS Nitride Selectivity, Low And Uniform Oxide Trench Dishing In Shallow Trench Isolation(STI) Chemical Mechanical Planarization Polishing(CMP)
WO2020091242A1 (ko) * 2018-10-31 2020-05-07 영창케미칼 주식회사 구리 배리어층 연마용 슬러리 조성물
JP7803851B2 (ja) * 2019-09-04 2026-01-21 シーエムシー マテリアルズ リミティド ライアビリティ カンパニー ポリシリコンｃｍｐ用組成物および方法
JP7409899B2 (ja) * 2020-02-18 2024-01-09 株式会社フジミインコーポレーテッド 研磨用組成物、研磨方法、および半導体基板の製造方法
JP7519862B2 (ja) * 2020-10-05 2024-07-22 花王株式会社 酸化珪素膜用研磨液組成物
CN114975234A (zh) * 2021-02-24 2022-08-30 中国科学院微电子研究所 一种半导体器件的制造方法
US20240342856A1 (en) * 2023-04-17 2024-10-17 Taiwan Semiconductor Manufacturing Co., Ltd. Methods of Forming an Abrasive Slurry and Methods for Chemical-Mechanical Polishing

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001210611A (ja) 1999-10-27 2001-08-03 Applied Materials Inc 金属を平坦化するためのｃｍｐスラリー
JP2006128689A (ja) 2004-10-26 2006-05-18 Samsung Corning Co Ltd 化学的機械的平坦化用の水性スラリー組成物
US20070051917A1 (en) * 2005-09-08 2007-03-08 Thomas Terence M Polymeric barrier removal polishing slurry
US20080148652A1 (en) * 2006-12-21 2008-06-26 Junaid Ahmed Siddiqui Compositions for chemical mechanical planarization of copper
JP2009049402A (ja) 2007-08-03 2009-03-05 Rohm & Haas Electronic Materials Cmp Holdings Inc バリヤ除去ポリマー研磨スラリー
JP2010135792A (ja) 2008-12-03 2010-06-17 Lg Chem Ltd １次化学的機械的研磨用スラリー組成物および化学的機械的研磨方法
JP2010153865A (ja) 2008-12-22 2010-07-08 Rohm & Haas Electronic Materials Cmp Holdings Inc バリヤ除去ポリマー研磨スラリー
US20100184291A1 (en) * 2008-02-29 2010-07-22 Lg Chem, Ltd. Aqueous slurry composition for chemical mechanical polishing and chemical mechanical polishing method

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6740591B1 (en) * 2000-11-16 2004-05-25 Intel Corporation Slurry and method for chemical mechanical polishing of copper
US20050090104A1 (en) * 2003-10-27 2005-04-28 Kai Yang Slurry compositions for chemical mechanical polishing of copper and barrier films
CN1900206B (zh) * 2005-07-21 2011-01-05 安集微电子（上海）有限公司 化学机械抛光液及其用途

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001210611A (ja) 1999-10-27 2001-08-03 Applied Materials Inc 金属を平坦化するためのｃｍｐスラリー
JP2006128689A (ja) 2004-10-26 2006-05-18 Samsung Corning Co Ltd 化学的機械的平坦化用の水性スラリー組成物
US20070051917A1 (en) * 2005-09-08 2007-03-08 Thomas Terence M Polymeric barrier removal polishing slurry
US20080148652A1 (en) * 2006-12-21 2008-06-26 Junaid Ahmed Siddiqui Compositions for chemical mechanical planarization of copper
JP2008160112A (ja) 2006-12-21 2008-07-10 Dupont Air Products Nanomaterials Llc 銅の化学機械平坦化用組成物
JP2009049402A (ja) 2007-08-03 2009-03-05 Rohm & Haas Electronic Materials Cmp Holdings Inc バリヤ除去ポリマー研磨スラリー
US20100184291A1 (en) * 2008-02-29 2010-07-22 Lg Chem, Ltd. Aqueous slurry composition for chemical mechanical polishing and chemical mechanical polishing method
JP2011515023A (ja) 2008-02-29 2011-05-12 エルジー・ケム・リミテッド 化学的機械的研磨用水系スラリー組成物及び化学的機械的研磨方法
JP2010135792A (ja) 2008-12-03 2010-06-17 Lg Chem Ltd １次化学的機械的研磨用スラリー組成物および化学的機械的研磨方法
JP2010153865A (ja) 2008-12-22 2010-07-08 Rohm & Haas Electronic Materials Cmp Holdings Inc バリヤ除去ポリマー研磨スラリー

Also Published As

Publication number Publication date
KR20130020585A (ko) 2013-02-27
CN102950537B (zh) 2016-06-01
TW201320173A (zh) 2013-05-16
DE102012015824A1 (de) 2013-02-21
US20130045599A1 (en) 2013-02-21
TWI594310B (zh) 2017-08-01
JP6041095B2 (ja) 2016-12-07
JP2013042132A (ja) 2013-02-28
CN102950537A (zh) 2013-03-06
FR2979071B1 (fr) 2016-08-26
FR2979071A1 (fr) 2013-02-22

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