TWI594310B - 用於化學機械研磨銅之方法 - Google Patents
用於化學機械研磨銅之方法 Download PDFInfo
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- TWI594310B TWI594310B TW101128397A TW101128397A TWI594310B TW I594310 B TWI594310 B TW I594310B TW 101128397 A TW101128397 A TW 101128397A TW 101128397 A TW101128397 A TW 101128397A TW I594310 B TWI594310 B TW I594310B
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- Prior art keywords
- chemical mechanical
- mechanical polishing
- weight
- substrate
- copper
- Prior art date
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- 238000005498 polishing Methods 0.000 title claims description 155
- 239000000126 substance Substances 0.000 title claims description 134
- 229910052802 copper Inorganic materials 0.000 title claims description 67
- 239000010949 copper Substances 0.000 title claims description 67
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims description 66
- 238000000034 method Methods 0.000 title claims description 43
- 239000000203 mixture Substances 0.000 claims description 111
- 239000000758 substrate Substances 0.000 claims description 69
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims description 39
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical group [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 27
- 239000003112 inhibitor Substances 0.000 claims description 24
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 22
- 150000001875 compounds Chemical class 0.000 claims description 22
- 229910052698 phosphorus Inorganic materials 0.000 claims description 22
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 21
- 239000011574 phosphorus Substances 0.000 claims description 21
- 229920002635 polyurethane Polymers 0.000 claims description 21
- 239000004814 polyurethane Substances 0.000 claims description 21
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- 235000013855 polyvinylpyrrolidone Nutrition 0.000 claims description 18
- 229920000036 polyvinylpyrrolidone Polymers 0.000 claims description 18
- 239000002002 slurry Substances 0.000 claims description 18
- 239000003795 chemical substances by application Substances 0.000 claims description 17
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- 238000000227 grinding Methods 0.000 claims description 15
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- 239000008139 complexing agent Substances 0.000 claims description 13
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- 239000003139 biocide Substances 0.000 claims description 12
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- 230000001590 oxidative effect Effects 0.000 claims 2
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- BIVUUOPIAYRCAP-UHFFFAOYSA-N aminoazanium;chloride Chemical compound Cl.NN BIVUUOPIAYRCAP-UHFFFAOYSA-N 0.000 claims 1
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- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 description 4
- SWSQBOPZIKWTGO-UHFFFAOYSA-N dimethylaminoamidine Natural products CN(C)C(N)=N SWSQBOPZIKWTGO-UHFFFAOYSA-N 0.000 description 4
- 235000011180 diphosphates Nutrition 0.000 description 4
- 238000009472 formulation Methods 0.000 description 4
- 229910052809 inorganic oxide Inorganic materials 0.000 description 4
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- YZEZMSPGIPTEBA-UHFFFAOYSA-N 2-n-(4,6-diamino-1,3,5-triazin-2-yl)-1,3,5-triazine-2,4,6-triamine Chemical compound NC1=NC(N)=NC(NC=2N=C(N)N=C(N)N=2)=N1 YZEZMSPGIPTEBA-UHFFFAOYSA-N 0.000 description 3
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- 229910000387 ammonium dihydrogen phosphate Inorganic materials 0.000 description 1
- 239000000908 ammonium hydroxide Substances 0.000 description 1
- ZRIUUUJAJJNDSS-UHFFFAOYSA-N ammonium phosphates Chemical compound [NH4+].[NH4+].[NH4+].[O-]P([O-])([O-])=O ZRIUUUJAJJNDSS-UHFFFAOYSA-N 0.000 description 1
- 235000019826 ammonium polyphosphate Nutrition 0.000 description 1
- 229920001276 ammonium polyphosphate Polymers 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- JFCQEDHGNNZCLN-UHFFFAOYSA-N anhydrous glutaric acid Natural products OC(=O)CCCC(O)=O JFCQEDHGNNZCLN-UHFFFAOYSA-N 0.000 description 1
- 239000002518 antifoaming agent Substances 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 235000003704 aspartic acid Nutrition 0.000 description 1
- 239000012752 auxiliary agent Substances 0.000 description 1
- NLAYIUHDCPKDHX-UHFFFAOYSA-L barium(2+) trioxidophosphanium Chemical compound [Ba+2].[O-]P([O-])=O NLAYIUHDCPKDHX-UHFFFAOYSA-L 0.000 description 1
- WAKZZMMCDILMEF-UHFFFAOYSA-H barium(2+);diphosphate Chemical compound [Ba+2].[Ba+2].[Ba+2].[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O WAKZZMMCDILMEF-UHFFFAOYSA-H 0.000 description 1
- RCUAPGYXYWSYKO-UHFFFAOYSA-J barium(2+);phosphonato phosphate Chemical compound [Ba+2].[Ba+2].[O-]P([O-])(=O)OP([O-])([O-])=O RCUAPGYXYWSYKO-UHFFFAOYSA-J 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- OQFSQFPPLPISGP-UHFFFAOYSA-N beta-carboxyaspartic acid Natural products OC(=O)C(N)C(C(O)=O)C(O)=O OQFSQFPPLPISGP-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 description 1
- SXDBWCPKPHAZSM-UHFFFAOYSA-M bromate Chemical class [O-]Br(=O)=O SXDBWCPKPHAZSM-UHFFFAOYSA-M 0.000 description 1
- 239000006172 buffering agent Substances 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- KDYFGRWQOYBRFD-NUQCWPJISA-N butanedioic acid Chemical compound O[14C](=O)CC[14C](O)=O KDYFGRWQOYBRFD-NUQCWPJISA-N 0.000 description 1
- FJDQFPXHSGXQBY-UHFFFAOYSA-L caesium carbonate Chemical compound [Cs+].[Cs+].[O-]C([O-])=O FJDQFPXHSGXQBY-UHFFFAOYSA-L 0.000 description 1
- 229910000024 caesium carbonate Inorganic materials 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- DHNRXBZYEKSXIM-UHFFFAOYSA-N chloromethylisothiazolinone Chemical compound CN1SC(Cl)=CC1=O DHNRXBZYEKSXIM-UHFFFAOYSA-N 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000003750 conditioning effect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000002242 deionisation method Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- DNUFCIOKWJELSH-UHFFFAOYSA-O diazanium dioxido(oxo)phosphanium Chemical compound [NH4+].[NH4+].[O-][P+]([O-])=O DNUFCIOKWJELSH-UHFFFAOYSA-O 0.000 description 1
- LMBWSYZSUOEYSN-UHFFFAOYSA-N diethyldithiocarbamic acid Chemical compound CCN(CC)C(S)=S LMBWSYZSUOEYSN-UHFFFAOYSA-N 0.000 description 1
- 229910000396 dipotassium phosphate Inorganic materials 0.000 description 1
- 235000019797 dipotassium phosphate Nutrition 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 238000004821 distillation Methods 0.000 description 1
- 229950004394 ditiocarb Drugs 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- ZSFDBVJMDCMTBM-UHFFFAOYSA-N ethane-1,2-diamine;phosphoric acid Chemical compound NCCN.OP(O)(O)=O ZSFDBVJMDCMTBM-UHFFFAOYSA-N 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- CADNYOZXMIKYPR-UHFFFAOYSA-B ferric pyrophosphate Chemical compound [Fe+3].[Fe+3].[Fe+3].[Fe+3].[O-]P([O-])(=O)OP([O-])([O-])=O.[O-]P([O-])(=O)OP([O-])([O-])=O.[O-]P([O-])(=O)OP([O-])([O-])=O CADNYOZXMIKYPR-UHFFFAOYSA-B 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000012458 free base Substances 0.000 description 1
- 229940074391 gallic acid Drugs 0.000 description 1
- 235000004515 gallic acid Nutrition 0.000 description 1
- 238000005227 gel permeation chromatography Methods 0.000 description 1
- 239000000174 gluconic acid Substances 0.000 description 1
- 235000012208 gluconic acid Nutrition 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 235000012907 honey Nutrition 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- VFHDWENBWYCAIB-UHFFFAOYSA-M hydrogen carbonate;tetramethylazanium Chemical compound OC([O-])=O.C[N+](C)(C)C VFHDWENBWYCAIB-UHFFFAOYSA-M 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 239000000138 intercalating agent Substances 0.000 description 1
- ICIWUVCWSCSTAQ-UHFFFAOYSA-M iodate Chemical compound [O-]I(=O)=O ICIWUVCWSCSTAQ-UHFFFAOYSA-M 0.000 description 1
- 229910000398 iron phosphate Inorganic materials 0.000 description 1
- WBJZTOZJJYAKHQ-UHFFFAOYSA-K iron(3+) phosphate Chemical compound [Fe+3].[O-]P([O-])([O-])=O WBJZTOZJJYAKHQ-UHFFFAOYSA-K 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- VPJKGKQWCZSERN-UHFFFAOYSA-N lanthanum hydrochloride Chemical compound Cl.[La] VPJKGKQWCZSERN-UHFFFAOYSA-N 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 239000011572 manganese Substances 0.000 description 1
- MMIPFLVOWGHZQD-UHFFFAOYSA-N manganese(3+) Chemical compound [Mn+3] MMIPFLVOWGHZQD-UHFFFAOYSA-N 0.000 description 1
- JDSHMPZPIAZGSV-UHFFFAOYSA-N melamine Chemical compound NC1=NC(N)=NC(N)=N1 JDSHMPZPIAZGSV-UHFFFAOYSA-N 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 239000003607 modifier Substances 0.000 description 1
- 235000019837 monoammonium phosphate Nutrition 0.000 description 1
- 229910000402 monopotassium phosphate Inorganic materials 0.000 description 1
- 235000019796 monopotassium phosphate Nutrition 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- JPMIIZHYYWMHDT-UHFFFAOYSA-N octhilinone Chemical compound CCCCCCCCN1SC=CC1=O JPMIIZHYYWMHDT-UHFFFAOYSA-N 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- MPQXHAGKBWFSNV-UHFFFAOYSA-N oxidophosphanium Chemical class [PH3]=O MPQXHAGKBWFSNV-UHFFFAOYSA-N 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- FJKROLUGYXJWQN-UHFFFAOYSA-N papa-hydroxy-benzoic acid Natural products OC(=O)C1=CC=C(O)C=C1 FJKROLUGYXJWQN-UHFFFAOYSA-N 0.000 description 1
- KHIWWQKSHDUIBK-UHFFFAOYSA-N periodic acid Chemical compound OI(=O)(=O)=O KHIWWQKSHDUIBK-UHFFFAOYSA-N 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 150000004965 peroxy acids Chemical class 0.000 description 1
- JRKICGRDRMAZLK-UHFFFAOYSA-L persulfate group Chemical group S(=O)(=O)([O-])OOS(=O)(=O)[O-] JRKICGRDRMAZLK-UHFFFAOYSA-L 0.000 description 1
- ACVYVLVWPXVTIT-UHFFFAOYSA-M phosphinate Chemical compound [O-][PH2]=O ACVYVLVWPXVTIT-UHFFFAOYSA-M 0.000 description 1
- 150000004714 phosphonium salts Chemical class 0.000 description 1
- XZTOTRSSGPPNTB-UHFFFAOYSA-N phosphono dihydrogen phosphate;1,3,5-triazine-2,4,6-triamine Chemical compound NC1=NC(N)=NC(N)=N1.OP(O)(=O)OP(O)(O)=O XZTOTRSSGPPNTB-UHFFFAOYSA-N 0.000 description 1
- 150000003013 phosphoric acid derivatives Chemical class 0.000 description 1
- XFZRQAZGUOTJCS-UHFFFAOYSA-N phosphoric acid;1,3,5-triazine-2,4,6-triamine Chemical compound OP(O)(O)=O.NC1=NC(N)=NC(N)=N1 XFZRQAZGUOTJCS-UHFFFAOYSA-N 0.000 description 1
- QVJYHZQHDMNONA-UHFFFAOYSA-N phosphoric acid;1,3,5-triazine-2,4,6-triamine Chemical compound OP(O)(O)=O.NC1=NC(N)=NC(N)=N1.NC1=NC(N)=NC(N)=N1 QVJYHZQHDMNONA-UHFFFAOYSA-N 0.000 description 1
- PJNZPQUBCPKICU-UHFFFAOYSA-N phosphoric acid;potassium Chemical compound [K].OP(O)(O)=O PJNZPQUBCPKICU-UHFFFAOYSA-N 0.000 description 1
- 125000004437 phosphorous atom Chemical group 0.000 description 1
- XNGIFLGASWRNHJ-UHFFFAOYSA-L phthalate(2-) Chemical compound [O-]C(=O)C1=CC=CC=C1C([O-])=O XNGIFLGASWRNHJ-UHFFFAOYSA-L 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 235000019260 propionic acid Nutrition 0.000 description 1
- IUVKMZGDUIUOCP-BTNSXGMBSA-N quinbolone Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H]([C@]4(C=CC(=O)C=C4CC3)C)CC[C@@]21C)C1=CCCC1 IUVKMZGDUIUOCP-BTNSXGMBSA-N 0.000 description 1
- MAZOHJVAXBNBPX-UHFFFAOYSA-N ruthenium hydrochloride Chemical group Cl.[Ru] MAZOHJVAXBNBPX-UHFFFAOYSA-N 0.000 description 1
- 229960004889 salicylic acid Drugs 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 159000000008 strontium salts Chemical class 0.000 description 1
- WSANLGASBHUYGD-UHFFFAOYSA-N sulfidophosphanium Chemical class S=[PH3] WSANLGASBHUYGD-UHFFFAOYSA-N 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 239000011975 tartaric acid Substances 0.000 description 1
- 235000002906 tartaric acid Nutrition 0.000 description 1
- SITVSCPRJNYAGV-UHFFFAOYSA-L tellurite Chemical compound [O-][Te]([O-])=O SITVSCPRJNYAGV-UHFFFAOYSA-L 0.000 description 1
- VKFFEYLSKIYTSJ-UHFFFAOYSA-N tetraazanium;phosphonato phosphate Chemical compound [NH4+].[NH4+].[NH4+].[NH4+].[O-]P([O-])(=O)OP([O-])([O-])=O VKFFEYLSKIYTSJ-UHFFFAOYSA-N 0.000 description 1
- DAZSLCYGSKMFLB-UHFFFAOYSA-B tetrabismuth;phosphonato phosphate Chemical compound [Bi+3].[Bi+3].[Bi+3].[Bi+3].[O-]P([O-])(=O)OP([O-])([O-])=O.[O-]P([O-])(=O)OP([O-])([O-])=O.[O-]P([O-])(=O)OP([O-])([O-])=O DAZSLCYGSKMFLB-UHFFFAOYSA-B 0.000 description 1
- 229910000404 tripotassium phosphate Inorganic materials 0.000 description 1
- 235000019798 tripotassium phosphate Nutrition 0.000 description 1
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- LRXTYHSAJDENHV-UHFFFAOYSA-H zinc phosphate Chemical compound [Zn+2].[Zn+2].[Zn+2].[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O LRXTYHSAJDENHV-UHFFFAOYSA-H 0.000 description 1
- 229910000165 zinc phosphate Inorganic materials 0.000 description 1
- OMSYGYSPFZQFFP-UHFFFAOYSA-J zinc pyrophosphate Chemical compound [Zn+2].[Zn+2].[O-]P([O-])(=O)OP([O-])([O-])=O OMSYGYSPFZQFFP-UHFFFAOYSA-J 0.000 description 1
- CZPRKINNVBONSF-UHFFFAOYSA-M zinc;dioxido(oxo)phosphanium Chemical compound [Zn+2].[O-][P+]([O-])=O CZPRKINNVBONSF-UHFFFAOYSA-M 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/7684—Smoothing; Planarisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Description
本發明係關於化學機械研磨基板之方法。更具體言之,本發明係關於化學機械研磨具有銅互連之半導體基板的方法。
由於銅之相對低電阻及改良之抗電遷移性,目前,銅係於半導體晶圓整合方案中選用作互連材質。由於與使用電漿蝕刻銅相關之困難性,典型係使用金屬鑲嵌技術來製造銅互連。於典型之金屬鑲嵌結構中,溝槽或導孔係蝕刻於介電層內;隨後,阻擋材質(典型係Ta、TaN)及種晶銅材質係沉積於該溝槽或導孔內;以及,隨後,藉由電鍍沉積整體的銅。所沉積之銅填充所欲之區域(亦即,該溝槽或導孔)並滿溢出來覆蓋該晶圓之周邊區域。隨後,化學機械研磨(CMP)係用以移除非所欲(過界)之銅材質並將該晶圓表面平整化。
傳統銅CMP典型係多步驟製程。典型之第一步係使用展現銅相對於該阻擋材質之高移除速率選擇性的研磨組成物,以促使非所欲(過界)之銅自該晶圓表面整體地快速移除。該高選擇性研磨組成物係設計為促使於該阻擋層上停止研磨。儘管如此,該高銅選擇性之第一研磨步驟仍可導致沉積於該溝槽或導孔內部之銅層被研磨,造成稱為碟化(dishing)之效應。典型之第二步係使用另一種研磨組成物(阻擋製劑)以促使該阻擋材質自該晶圓表面移除。於典型
之低選擇性漿料(LSS)整合方案中,所選擇之阻擋製劑係設計為顯現出銅相對於該阻擋材質之非選擇性,以改良製程邊際並減少碟化。週期性地施行第三步(如,緩衝步驟)以改良經研磨之表面的缺陷性。
由於銅相對柔軟,改良銅之化學機械研磨中的缺陷性效能係艱難之挑戰。銅CMP相關之缺陷性主要為各種刮擦及顫痕(chatter)。由於相關之產率損失及可靠性考量,改良銅CMP之缺陷性尤為興趣所在。
一種宣稱用於改良銅CMP中之缺陷性的溶液係由Siddiqui等人於美國專利申請案公開第2008/0148652號中揭示者。Siddiqui等人揭露了一種用於化學機械研磨含銅基板之組成物及相應方法,宣稱其在銅CMP加工過程中對銅提供低缺陷性水準,其中,該組成物係包含實質上不含可溶解聚合矽酸酯的膠體氧化矽。
儘管如此,對於提供改良之銅缺陷性效能之新化學機械研磨組成物及方法仍有持續之需求。
本發明係提供一種化學機械研磨基板之方法,係包含:提供基板,其中,該基板係包含銅;提供化學機械研磨漿料組成物,該組成物係包含,作為初始成分之下列者:水;0.1至20 wt%之研磨劑;0.01至15 wt%之錯合劑;0.02至5 wt%之抑制劑;0.01至5 wt%之含磷化合物;0.001至3 wt%之聚乙烯基吡咯啶酮;>0.1至1 wt%之組胺酸;>0.1至1 wt%之胍(guanidine),其中,該胍係選自胍、胍衍生
物、胍鹽及其混合物;0至25 wt%之視需要之氧化劑;0至0.1 wt%之視需要之整平劑;0至0.01 wt%之視需要之殺生物劑;以及視需要之pH調節劑;其中,所提供之化學機械研磨漿料組成物係具有9至11之pH;提供具有研磨表面之化學機械研磨墊;將該化學機械研磨漿料組成物分注於該化學機械研磨墊上之該化學機械研磨墊與該基板之介面或接近該介面處;以及以0.69至34.5千帕(kPa)之下壓力於該化學機械研磨墊之研磨表面與基板間的介面處產生動態接觸;其中,該基板係經研磨;以及,其中,部份銅係自該基板移除。
本發明亦提供一種化學機械研磨基板之方法,該組成物係包含:提供基板,其中,該基板係包含銅;提供化學機械研磨漿料組成物,該組成物係包含,作為初始成分之下列者:水;0.5至15 wt%之研磨劑,其中,該研磨劑係平均粒徑為25至75 nm之膠體氧化矽研磨劑;0.1至1 wt%之錯合劑,其中,該錯合劑係檸檬酸;0.05至2 wt%之抑制劑,其中,該抑制劑係苯并三唑;0.05至3 wt%之含磷化合物,其中,該含磷化合物係磷酸;0.05至1.5 wt%之聚乙烯基吡咯啶酮,其中,該聚乙烯基吡咯啶酮係具有2,500至50,000之重量平均分子量;0.25至1 wt%之組胺酸;0.25至1 wt%之胍,其中,該胍係選自胍、胍衍生物、胍鹽及其混合物;0.1至10 wt%之氧化劑,其中,該氧化劑係H2O2;0.01至0.1 wt%之整平劑,其中,該整平劑係氯化銨;0.001至0.01 wt%之殺生物劑;以及0.1至1 wt%
之pH調節劑,其中,該pH調節劑係氫氧化鉀;提供具有研磨表面之化學機械研磨墊;將該化學機械研磨漿料組成物分注於該化學機械研磨墊上之該化學機械研磨墊與該基板之介面或接近該介面處;以及以0.69至34.5 kPa之下壓力於該化學機械研磨墊之研磨表面與基板間的介面處產生動態接觸;其中,該基板係經研磨;其中,部份銅係自該基板移除;以及,其中,以平台速度為每分鐘93轉、載體速度為每分鐘87轉、化學機械研磨組成物流速為300 mL/分,且於使用包含聚胺酯研磨層之化學機械研磨墊(其中,該聚胺酯研磨層係含有聚合空心核微粒及聚胺酯灌注之非織次墊)之200 mm研磨機上之標稱下壓力為11.7 kPa時,該化學機械研磨組成物促使銅之移除速率為1,000 Å/分,且具有>0.1μm之尺寸的研磨後SP1缺陷數係200。
本發明亦提供一種化學機械研磨基板之方法,係包含:提供基板,其中,該基板係包含銅;提供化學機械研磨漿料組成物,該組成物係包含,作為初始成分之下列者:水;10至15 wt%之研磨劑,其中,該研磨劑係平均粒徑為25至75 nm之膠體氧化矽研磨劑;0.01至0.5 wt%之錯合劑,其中,該錯合劑係檸檬酸;0.05至1 wt%之抑制劑,其中,該抑制劑係苯并三唑;0.05至0.2 wt%之含磷化合物,其中,該含磷化合物係磷酸;0.1至1 wt%之聚乙烯基吡咯啶酮,其中,該聚乙烯基吡咯啶酮係具有12,000至20,000之重量平均分子量;0.25至0.6 wt%之組胺酸;0.25至0.6 wt%之鹽酸胍;0.1至5 wt%之氧化劑,其中,該氧
化劑係H2O2;0.01至0.05 wt%之整平劑,其中,該整平劑係氯化銨;0.001至0.01 wt%之殺生物劑;以及0.1至1 wt%之pH調節劑,其中,該pH調節劑係氫氧化鉀;以及,其中,作為初始成分而包括於該化學機械研磨組成物中之組胺酸及鹽酸胍的質量存在10%之差異;提供具有研磨表面之化學機械研磨墊;將該化學機械研磨漿料組成物分注於該化學機械研磨墊上之該化學機械研磨墊與該基板之介面或接近該介面處;以及以0.69至34.5 kPa之下壓力於該化學機械研磨墊之研磨表面與基板間的介面處產生動態接觸;其中,該基板係經研磨;其中,部份銅係自該基板移除;以及,其中,以平台速度為每分鐘93轉、載體速度為每分鐘87轉、化學機械研磨組成物流速為300 mL/分,且於使用包含聚胺酯研磨層之化學機械研磨墊(其中,該聚胺酯研磨層係含有聚合空心核微粒及聚胺酯灌注之非織次墊)之200 mm研磨機上之標稱下壓力為11.7 kPa時,該化學機械研磨組成物促使銅之移除速率為1,000 Å/分,且具有>0.1μm之尺寸的研磨後SP1缺陷數係200。
本發明之化學機械研磨方法係有用於研磨含銅基板,尤其是包含銅互連之半導體晶圓。於本發明之方法中使用的化學機械研磨組成物係所欲地在非選擇性製劑中提供高銅移除速率(>1100Å),且具有改良之缺陷性效能(>0.1μm之缺陷200)。
本發明之化學機械研磨基板的方法係有用於化學機械
研磨含銅基板。本發明之化學機械研磨基板的方法係尤其有用於具有銅互連之半導體晶圓的化學機械研磨。
使用本發明之方法研磨之基板視需要復包含選自下列之額外材質:磷矽酸鹽玻璃(PSG)、硼-磷矽酸鹽玻璃(BPSG)、未摻雜之矽酸鹽玻璃(USG)、旋塗式玻璃(SOG)、原矽酸四乙酯(TEOS)、電漿增強TEOS(PETEOS)、流動性氧化物(FOx)、高密度電漿化學氣相沉積(HDP-CVD)氧化物、及氮化鉭(TaN)。較佳地,使用本發明之方法研磨之基板復包含選自TaN與TEOS之額外材質。
較佳地,作為初始成分而用於本發明之化學機械研磨方法所使用之化學機械研磨組成物中的水係經蒸餾與去離子化之至少一者處理,以限制偶發雜質。
適用於本發明之化學機械研磨方法中使用之化學機械研磨組成物中的研磨劑係包括,舉例而言,無機氧化物、無機氫氧化物、無機氫氧化物氧化物、金屬硼化物、金屬碳化物、金屬氮化物、聚合物粒子以及包含前述之至少一者的混合物。適當之無機氧化物係包括,舉例而言,氧化矽(SiO2)、氧化鋁(Al2O3)、氧化鋯(ZrO2)、氧化鈰(CeO2)、氧化錳(MnO2)、氧化鈦(TiO2)或包含前述氧化物之至少一者的組合。若需要,亦可使用此等無機氧化物之修飾形式,如有機聚合物包覆之無機氧化物粒子及無機包覆之粒子。適當之金屬碳化物、硼化物及氮化物係包括,舉例而言,碳化矽、氮化矽、碳氮化矽(SiCN)、碳化硼、碳化鎢、碳化鋯、硼化鋁、碳化鉭、碳化鈦或包含前述之金屬碳化物、
金屬硼化物及金屬氮化物之至少一者的組合。較佳地,所使用之研磨劑係膠體氧化矽研磨劑。更佳地,所使用之研磨劑係平均粒徑為1至200 nm(更佳係1至100 nm,最佳係25至75 nm)之膠體氧化矽,該平均粒徑係藉由習知之雷射光散射技術測定之。
於本發明之化學機械研磨方法中使用之化學機械研磨組成物較佳係包含作為初始成分之0.1至20 wt%,更佳0.5至15 wt%,最佳10至15 wt%之研磨劑。較佳地,該研磨劑係膠體氧化矽研磨劑。最佳地,本發明之化學機械研磨組成物係包含作為初始成分之10至15 wt%之平均粒徑為25至75 nm的膠體氧化矽研磨劑。
於本發明之化學機械研磨方法中使用之化學機械研磨組成物係包含作為初始成分之用於銅之錯合劑。咸信,該錯合劑促使銅至基板移除。較佳地,所使用之化學機械研磨組成物係包含作為初始成分之0.01至15 wt%(更佳0.1至1 wt%,最佳0.1至0.5 wt%)之錯合劑。錯合劑係包括,舉例而言,乙酸、檸檬酸、乙醯乙酸乙酯、乙醇酸、乳酸、蘋果酸、草酸、柳酸、二乙基二硫代胺基甲酸鈉、琥珀酸、酒石酸、鋶基乙酸、甘胺酸、丙胺酸、天冬胺酸、伸乙二胺、三甲基二胺、丙二酸、戊二酸、3-羥基丁酸、丙酸、酞酸、異酞酸、3-羥基柳酸、3,5-二羥基柳酸、五倍子酸、葡萄糖酸、兒茶酚、五倍子酚、鞣酸,包括其鹽及混合物。較佳地,所使用之錯合劑係選自乙酸、檸檬酸、乙醯乙酸乙酯、乙醇酸、乳酸、蘋果酸、草酸、及其組合。最佳地,
所使用之錯合劑係檸檬酸。
於本發明之化學機械研磨方法中使用之化學機械研磨組成物係包含作為初始成分之抑制劑。咸信,該抑制劑係作用以保護該基板表面上之銅不被靜態蝕刻。較佳地,所使用之化學機械研磨組成物係包含作為初始成分之0.02至5 wt%(更佳0.05至2 wt%,最佳0.05至1 wt%)之抑制劑。所使用之抑制劑係視需要包含抑制劑之混合物。所使用之抑制劑較佳係一種唑抑制劑。更佳地,所使用之抑制劑係選自苯并三唑(BTA)、巰基苯并噻唑(MBT)、甲苯三唑及咪唑之唑抑制劑。最佳地,所使用之抑制劑係BTA。
於本發明之化學機械研磨方法中使用之化學機械研磨組成物係包含作為初始成分之含磷化合物。咸信,該含磷化合物促進銅移除速率加速。較佳地,所使用之化學機械研磨組成物係包含0.01至5 wt%(更佳0.05至3 wt%;再更佳0.05至0.5 wt%;最佳0.05至0.2 wt%)之含磷化合物。如本文及後附申請專利範圍中所使用者,術語「含磷化合物」係意指含有磷原子之任何化合物。較佳地,所使用之含磷化合物係選自磷酸鹽、焦磷酸鹽、聚磷酸鹽、膦酸鹽、膦氧化物、膦硫化物、磷雜環己烷(phosphor inanes)、膦酸鹽、亞磷酸鹽及亞膦酸鹽;包括其酸、鹽、混合酸鹽、酯、半酯(partial ester)、混合酯及其混合物,如磷酸。更佳地,所使用之含磷化合物係選自磷酸鋅、焦磷酸鋅、聚磷酸鋅、膦酸鋅、磷酸銨、焦磷酸銨、聚磷酸銨、膦酸銨、磷酸二銨、焦磷酸二銨、聚磷
酸二銨、膦酸二銨、磷酸鉀、磷酸二鉀、磷酸胍、焦磷酸胍、聚磷酸胍、膦酸胍、磷酸鐵、焦磷酸鐵、聚磷酸鐵、膦酸鐵、磷酸鈰、焦磷酸鈰、聚磷酸鈰、膦酸鈰、磷酸乙二胺、磷酸哌、焦磷酸哌、膦酸哌、磷酸蜜胺、磷酸二蜜胺、焦磷酸蜜胺、聚磷酸蜜胺、膦酸蜜胺、磷酸蜜白胺、焦磷酸蜜白胺、聚磷酸蜜白胺、膦酸蜜白胺、磷酸蜜勒胺、焦磷酸蜜勒胺、聚磷酸蜜勒胺、膦酸蜜勒胺、磷酸二氰基二醯胺、磷酸脲,包括其酸、鹽、混合酸鹽、酯、半酯、混合酯及其混合物。最佳地,所使用之含磷化合物係選自下列之至少一者:磷酸鉀(如,磷酸三鉀、磷酸氫二鉀、磷酸二氫鉀及其混合物);磷酸銨(如,磷酸三銨、磷酸氫二銨、磷酸二氫銨及其混合物)及磷酸。過量之磷酸銨可於溶液中引入非所欲之量的游離銨(free ammonium)。過量之游離銨可能攻擊銅,以產生粗糙之金屬表面。加入磷酸與游離鹼金屬如鉀進行原位反應(in situ),以形成有其有效之磷酸鉀鹽及磷酸二鉀鹽。
於本發明之化學機械研磨方法中使用之化學機械研磨組成物係包含作為初始成分之聚乙烯基吡咯啶酮。較佳地,所使用之化學機械研磨組成物係包含作為初始成分之0.001至3 wt%(更佳0.05至1.5 wt%,最佳0.1至1 wt%)之聚乙烯基吡咯啶酮。
所使用之聚乙烯基吡咯啶酮較佳係具1,000至1,000,000之重量平均分子量。對於本發明之目標,重量平均分子量係指代藉由凝膠滲透層析術量測之分子量。該
漿料更佳係具有1,000至500,000之重量平均分子量,且最佳係2,500至50,000之重量平均分子量。舉例而言,業經證實具有12,000至20,000之重量平均分子量的聚乙烯基吡咯啶酮特別有效。
較佳地,於本發明之化學機械研磨方法中使用之化學機械研磨組成物係包含作為初始成分之胍;其中,該胍係選自胍、胍衍生物、胍鹽及其混合物。更佳地,所使用之胍係選自碳酸胍及鹽酸胍。最佳地,所使用之胍係鹽酸胍(guanidine HCl)。
較佳地,於本發明之化學機械研磨方法中使用之化學機械研磨組成物係包含作為初始成分之>0.1至1 wt%(更佳0.25至1 wt%;最佳0.3至0.5 wt%)之組胺酸及>0.1至1 wt%(更佳0.25至1 wt%;最佳0.3至0.5 wt%)之胍,其中,該胍係選自胍、胍衍生物、胍鹽及其混合物(更佳地,其中,該胍係鹽酸胍)。更佳地,於本發明之化學機械研磨方法中使用之化學機械研磨組成物係包含作為初始成分之>0.1至1 wt%(更佳0.25至1 wt%;最佳0.3至0.5 wt%)之組胺酸及>0.1至1 wt%(更佳0.25至1 wt%;最佳0.3至0.5 wt%)之胍,其中,該胍係選自胍、胍衍生物、胍鹽及其混合物(更佳地,其中,該胍係鹽酸胍);以及,其中,作為初始成分而包括於該化學機械研磨組成物中之組胺酸及胍的質量存在10%(更佳5%;最佳1%)之差異。
於本發明之化學機械研磨方法中使用之化學機械研磨組成物係視需要包含作為初始成分之氧化劑。較佳地,所
使用之化學機械研磨組成物係包含作為初始成分之0至25 wt%(更佳0.1至10 wt%;最佳0.1至5wt%)之氧化劑。較佳地,所使用之氧化劑係選自過氧化氫(H2O2)、單過硫酸鹽、碘酸鹽、過酞酸鎂、過乙酸及其他過酸、過硫酸鹽、溴酸鹽、過碘酸鹽、硝酸鹽、鐵鹽、鈰鹽、Mn(III)鹽、Mn(IV)鹽、Mn(VI)鹽、銀鹽、銅鹽、鉻鹽、鈷鹽、鹵素、次氯酸鹽及其混合物。最佳地,所使用之氧化劑係過氧化氫。當該化學機械研磨組成物含有不安定之氧化劑如過氧化氫時,較佳係於使用當時將該氧化劑併入該化學機械研磨組成物中。
於本發明之化學機械研磨方法中使用之化學機械研磨組成物係視需要包含作為初始成分之整平劑。所使用之整平劑可包括氯化物。較佳之整平劑係氯化銨。較佳地,本發明之化學機械研磨組成物係包含作為初始成分之0至0.1 wt%(更佳0.01至0.1 wt%,最佳0.01至0.05 wt%)之氯化銨。咸信,將氯化銨作為初始成分併入所使用之化學機械研磨組成物中,可對正在研磨之基板的表面外觀提供改良,且可藉由增加銅移除速率而促使銅自該基板移除。
於本發明之化學機械研磨方法中使用之化學機械研磨組成物係視需要包含作為初始成分之殺生物劑。較佳地,本發明之化學機械研磨組成物係包含,作為初始成分之0至0.01 wt%(更佳0.001至0.01 wt%)之殺生物劑。較佳地,所使用之化學機械研磨組成物係包含作為初始成分之殺生物劑如異噻唑啉酮(isothiazolinone)衍生物。較佳之異噻
唑啉酮衍生物係包括,舉例而言,甲基-4-異噻唑啉-3-酮;及5-氯-2-甲基-4-異噻唑啉-3-酮(如,含有9.5至9.9 wt%甲基-4-異噻唑啉-3-酮之KordekTM MLX;以及含有甲基-4-異噻唑啉-3-酮與5-氯-2-甲基-4-異噻唑啉-3-酮之混合物的KathonTM ICP III,兩者皆可自羅門哈斯公司(Rohm and Haas Company)商購之)。
於本發明之化學機械研磨方法中使用之化學機械研磨組成物較佳係具有8至12(更佳9至11,最佳10至11)之pH。適用於調節該化學機械研磨組成物之pH的酸包括,舉例而言,硝酸、硫酸及鹽酸。適用於調節該化學機械研磨組成物之pH的鹼包括,舉例而言,氫氧化銨、氫氧化鉀、氫氧化四甲基銨及四甲基碳酸氫銨;較佳係氫氧化四甲基銨。較佳地,本發明之化學機械研磨組成物係包含作為初始成分之0.1至1 wt%之氫氧化鉀。
於本發明之化學機械研磨方法中使用之化學機械研磨組成物視需要復包含選自消泡劑、分散劑、界面活性劑及緩衝劑之額外助劑。
本發明之化學機械研磨方法較佳係包含:提供基板,其中,該基板係包含銅(較佳地,其中,該基板係具有銅互連之半導體基板);提供化學機械研磨漿料組成物,係包含,作為初始成分之下列者:水;0.1至20 wt%(較佳0.5至15 wt%,更佳10至15 wt%)之研磨劑(較佳地,其中,該研磨劑係平均粒徑為25至75 nm之膠體氧化矽研磨劑);0.01至15 wt%(較佳0.1至1 wt%,更佳0.01至0.5
wt%)之錯合劑(較佳地,其中,該錯合劑係檸檬酸);0.02至5 wt%(較佳0.05至2 wt%,更佳0.05至1 wt%)之抑制劑(較佳地,其中,該抑制劑係苯并三唑;0.01至5 wt%(較佳0.05至3 wt%,更佳0.05至0.5 wt%,最佳0.05至0.2 wt%)之含磷化合物(較佳地,其中,該含磷化合物係磷酸;0.001至3 wt%(較佳0.05至1.5 wt%,更佳0.1至1 wt%)之聚乙烯基吡咯啶酮(較佳地,其中,該聚乙烯基吡咯啶酮係具有2,500至50,000之重量平均分子量(更佳係12,000至20,000));>0.1至1 wt%(較佳0.25至1 wt%,更佳0.25至0.6 wt%)之組胺酸;>0.1至1 wt%(較佳0.25至1 wt%,更佳0.25至0.6 wt%)之胍,其中,該胍係選自胍、胍衍生物、胍鹽及其混合物(較佳地,其中,該胍係鹽酸胍)(較佳地,其中,作為初始成分而包括於該化學機械研磨組成物中之組胺酸及鹽酸胍的質量存在10%(更佳5%,最佳1%)之差異);0至25 wt%(較佳0.1至10 wt%,更佳0.1至5 wt%)之視需要之氧化劑(較佳地,其中,該氧化劑係H2O2);0至0.1 wt%(較佳0.01至0.1 wt%,更佳0.01至0.05 wt%)之視需要之整平劑(較佳地,其中,該整平劑係氯化銨);0至0.01 wt%(較佳0.001至0.01 wt%)之視需要之殺生物劑;視需要之pH調節劑(較佳係0.1至1 wt%之pH調節劑,其中,該pH調節劑係氫氧化鉀);其中,所提供之化學機械研磨漿料組成物係具有9至11(較佳10至11)之pH;提供具有研磨表面之化學機械研磨墊;將該化學機械研磨漿料組成物分注於該化學機械研磨墊上
之該化學機械研磨墊與該基板之介面或接近該介面處;以及,以0.69至34.5 kPa之下壓力於該化學機械研磨墊之研磨表面與基板間的介面處產生動態接觸;其中,該基板係經研磨;以及,其中,部份銅係自該基板移除(較佳地,其中,該化學機械研磨組成物係顯現1100 Å/分(更佳係1500 Å/分)之銅移除速率(於下述實施例中詳述之研磨條件下量測之),以及,其中,該化學機械研磨組成物促使具有>0.1μm(於下述實施例中詳述之研磨條件下量測之)之尺寸的研磨後SP1缺陷數係200(更佳係100))。較佳地,該基板復包含TEOS,其中,至少部份TEOS係自該基板移除,其中,該化學機械研磨組成物顯現銅移除速率對TEOS移除速率選擇性(於下述實施例中詳述之研磨條件下量測之)為1:1至5:1(更佳係1:1至3:1)。較佳地,該基板復包含TaN,其中,至少部份TaN係自該基板移除,其中,該化學機械研磨組成物顯現銅移除速率對TaN移除速率之選擇性(於下述實施例中詳述之研磨條件下量測之)為1:1至5:1(更佳係2:1至4:1)。
本發明之化學機械研磨方法較佳係包含:提供基板,其中,該基板係包含銅(較佳地,其中,該基板係具有銅互連之半導體基板);提供化學機械研磨漿料組成物,係包含,作為初始成分之下列者:水;10至15 wt%之研磨劑,其中,該研磨劑係平均粒徑為25至75 nm之膠體氧化矽研磨劑;0.01至0.5 wt%之錯合劑,其中,該錯合劑係檸檬酸;0.05至1 wt%之抑制劑,其中,該抑制劑係苯并三唑;
0.05至0.2 wt%之含磷化合物,其中,該含磷化合物係磷酸;0.1至1 wt%之聚乙烯基吡咯啶酮,其中,該聚乙烯基吡咯啶酮係具有12,000至20,000之重量平均分子量;0.25至0.6 wt%之組胺酸;0.25至0.6 wt%之鹽酸胍;0.1至5 wt%之氧化劑,其中,該氧化劑係H2O2;0.01至0.05 wt%之整平劑,其中,該整平劑係氯化銨;0.001至0.01 wt%之殺生物劑;以及,0.1至1 wt%之pH調節劑,其中,該pH調節劑係氫氧化鉀;以及,其中,作為初始成分而包括於該化學機械研磨組成物中之組胺酸及鹽酸胍的質量存在10%之差異;提供具有研磨表面之化學機械研磨墊;將該化學機械研磨漿料組成物分注於該化學機械研磨墊上之該化學機械研磨墊與該基板之介面或接近該介面處;以及,以0.69至34.5 kPa之下壓力於該化學機械研磨墊之研磨表面與基板間的介面處產生動態接觸;其中,該基板係經研磨;以及,其中,部份銅係自該基板移除。較佳地,其中,以平台速度為每分鐘93轉、載體速度為每分鐘87轉、化學機械研磨組成物流速為300 mL/分,且於使用包含聚胺酯研磨層之化學機械研磨墊(其中,該聚胺酯研磨層係含有聚合空心核微粒及聚胺酯灌注之非織次墊)之200 mm研磨機上之標稱下壓力為11.7 kPa時,該化學機械研磨組成物係顯現1100 Å/分(更佳係1500 Å/分)之銅移除速率,且具有>0.1μm之尺寸的研磨後SP1缺陷數係200(更佳係100)。
現在,將於下述實施例中詳細揭示本發明之某些態樣。
所測試之全部化學機械研磨組成物(CMPC)係含有,作為初始成分之下列者:0.04 wt%之氯化銨;0.06 wt%之苯并三唑;0.4 wt%之具重量平均分子量為15,000的聚乙烯基吡咯啶酮;0.3 wt%之檸檬酸;0.1 wt%之磷酸;0.005 wt%之殺生物劑(購自羅門哈斯公司之含有9.5至9.9 wt%之甲基-4-異噻唑啉-3-酮的KordekTM MLX);0.4 wt%之氫氧化鉀;14 wt%之研磨劑(AZ電子材料公司(AZ Electronic Materials)製造且可自羅門哈斯電子材料CMP控股公司商購(Rohm And Haas Electronic Materials CMP Inc.)之平均粒徑為50 nm的Klebosol® II 1501-50膠體氧化矽);以及0.4 wt%之過氧化氫。該等CMPC係含有如表1中所示之添加之初始成分(任何存在者)。化學機械研磨組成物A至C係比較製劑,且係不處於本發明所主張之範疇內。
使用表1中揭示之化學機械研磨組成物於銅、TaN及TEOS之覆膜晶圓上施行研磨實驗。使用配備ISRM偵檢器系統之應用材料公司(Applied Materials,Inc.)之Mirra® 200 mm研磨機,使用VisionPadTM 3100(具有1010套及SP2310次墊)聚胺酯研磨墊(可自羅門哈斯電子材料CMP控股公司商購之),於1.7磅/平方英吋(psi)(11.7 kPa)下壓力、化學機械研磨組成物流速為300 mL/分、平台速度為每分鐘93轉(93 rpm)、載體速度為每分鐘87轉且漿料下落點為自研磨墊中心4.4英吋的條件下,施行研磨實驗。使用Kinik® AD3BG-150840鑽石墊調節器(可自中國砂輪企業(Kinik Company)商購之)來調節該研磨墊。於表2中報導之銅移除速率係使用Jordan Valley JVX-5200T度量工具(metrology tool)測定。於表2中報導之TEOS及TaN移除速率係藉由在研磨之前及之後使用KLA-Tencor FX200度量工具量測膜厚度而測定。使用來自KLA-Tencor之SP1度量工具施行對>0.1μm尺寸之銅缺陷的計數分析。
Claims (8)
- 一種化學機械研磨基板之方法,係包含:提供基板,其中,該基板係包含銅;提供化學機械研磨漿料組成物,該組成物包含作為初始成分之下列者:水;10至15wt%之平均粒徑為25至75nm之膠體氧化矽研磨劑;0.1至0.5wt%之錯合劑,其中,該錯合劑係選自乙酸、檸檬酸、乙醯乙酸乙酯、乙醇酸、乳酸、蘋果酸、草酸、及其組合;0.02至5wt%之抑制劑;0.01至5wt%之含磷化合物;0.001至3wt%之聚乙烯基吡咯啶酮;0.25至0.6wt%之組胺酸;0.25至0.6wt%之胍,其中,該胍係選自胍、胍衍生物、胍鹽及其混合物;0至25wt%之視需要之氧化劑;0至0.1wt%之視需要之整平劑;0至0.01wt%之視需要之殺生物劑;以及視需要之pH調節劑;其中,所提供之該化學機械研磨漿料組成物係具有9至11之pH;提供具有研磨表面之化學機械研磨墊; 將該化學機械研磨漿料組成物分注於該化學機械研磨墊上之該化學機械研磨墊與該基板之介面或接近該介面處;以及以0.69至34.5kPa之下壓力於該化學機械研磨墊之研磨表面與該基板間的介面處產生動態接觸;其中,該基板係經研磨;其中,該化學機械研磨組成物係顯現之1100Å/分之銅移除速率,以及,其中,該化學機械研磨組成物促使具有>0.1μm之尺寸的研磨後SP1缺陷數係200;其中,部份銅係自該基板移除;其中,該基板復包含原矽酸四乙酯;其中,至少部份該原矽酸四乙酯係自該基板移除;以及,其中,該化學機械研磨組成物顯現銅移除速率對原矽酸四乙酯移除速率之選擇性為1:1至5:1。
- 如申請專利範圍第1項所述之方法,其中,該基板復包含TaN;其中,至少部份該TaN係自該基板移除;以及,其中,該化學機械研磨組成物顯現銅移除速率對TaN移除速率之選擇性為1:1至5:1。
- 如申請專利範圍第1項所述之方法,其中,所提供之該化學機械研磨組成物係包含作為初始成分之下列者:水;10至15wt%之研磨劑,其中,該研磨劑係平均粒徑為25至75nm之膠體氧化矽研磨劑;0.1至035wt%之錯合劑,其中,該錯合劑係檸檬酸; 0.05至2wt%之抑制劑,其中,該抑制劑係苯并三唑;0.05至3wt%之含磷化合物,其中,該含磷化合物係磷酸;0.05至1.5wt%之聚乙烯基吡咯啶酮,其中,該聚乙烯基吡咯啶酮係具有2,500至50,000之重量平均分子量;0.25至0.6wt%之組胺酸;0.25至0.6wt%之胍,其中,該胍係選自胍、胍衍生物、胍鹽及其混合物;0.1至10wt%之氧化劑,其中,該氧化劑係H2O2;0.01至0.1wt%之整平劑,其中,該整平劑係氯化銨;0.001至0.01wt%之殺生物劑;以及0.1至1wt%之pH調節劑,其中,該pH調節劑係氫氧化鉀。
- 如申請專利範圍第3項所述之方法,其中,以平台速度為每分鐘93轉、載體速度為每分鐘87轉、化學機械研磨組成物流速為300mL/分、且於使用包含聚胺酯研磨層之化學機械研磨墊(其中,該聚胺酯研磨層係含有聚合空心核微粒及聚胺酯灌注之非織次墊)之200mm研磨機上之標稱下壓力為11.7kPa時,該化學機械研磨組成物促使銅之移除速率為1,000Å/分,且具有>0.1μm之尺寸的研磨後SP1缺陷數係200。
- 如申請專利範圍第4項所述之方法,其中,該基板復包含原矽酸四乙酯;其中,至少部份該原矽酸四乙酯係自該基板移除;以及,其中,以平台速度為每分鐘93轉、載體速度為每分鐘87轉、化學機械研磨組成物流速為300mL/分,且於使用包含聚胺酯研磨層之化學機械研磨墊(其中,該聚胺酯研磨層係含有聚合空心核微粒及聚胺酯灌注之非織次墊)之200mm研磨機上之標稱下壓力為11.7kPa時,該化學機械研磨組成物顯現銅移除速率對原矽酸四乙酯移除速率之選擇性為1:1至5:1。
- 如申請專利範圍第4項所述之方法,其中,該基板復包含TaN;其中,至少部份該TaN係自該基板移除;以及,其中,以平台速度為每分鐘93轉、載體速度為每分鐘87轉、化學機械研磨組成物流速為300mL/分,且於使用包含聚胺酯研磨層之化學機械研磨墊(其中,該聚胺酯研磨層係含有聚合空心核微粒及聚胺酯灌注之非織次墊)之200mm研磨機上之標稱下壓力為11.7kPa時,該化學機械研磨組成物顯現銅移除速率對TaN移除速率之選擇性為1:1至5:1。
- 如申請專利範圍第1項所述之方法,其中,所提供之該化學機械研磨組成物係包含作為初始成分之下列者:水;10至15wt%之研磨劑,其中,該研磨劑係平均粒徑為25至75nm之膠體氧化矽研磨劑;0.01至0.5wt%之錯合劑,其中,該錯合劑係檸 檬酸;0.05至1wt%之抑制劑,其中,該抑制劑係苯并三唑;0.05至0.2wt%之含磷化合物,其中,該含磷化合物係磷酸;0.1至1wt%之聚乙烯基吡咯啶酮,其中,該聚乙烯基吡咯啶酮係具有12,000至20,000之重量平均分子量;0.25至0.6wt%之組胺酸;0.25至0.6wt%之胍,其中,該胍係鹽酸胍;0.1至5wt%之氧化劑,其中,該氧化劑係H2O2;0.01至0.05wt%之整平劑,其中,該整平劑係氯化銨;0.001至0.01wt%之殺生物劑;以及0.1至1wt%之pH調節劑,其中,該pH調節劑係氫氧化鉀;以及其中,該作為初始成分而包括於該化學機械研磨組成物中之組胺酸及鹽酸胍的質量存在10%之差異。
- 如申請專利範圍第7項所述之方法,其中,以平台速度為每分鐘93轉、載體速度為每分鐘87轉、化學機械研磨組成物流速為300mL/分,且於使用包含聚胺酯研磨層之化學機械研磨墊(其中,該聚胺酯研磨層係含有聚合空心核微粒及聚胺酯灌注之非織次墊)之200mm研磨機上之標稱下壓力為11.7kPa時,該化學機械研磨組 成物促使銅之移除速率為1,000Å/分,且具有>0.1μm之尺寸的研磨後SP1缺陷數係200。
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EP2794733B1 (en) * | 2011-12-21 | 2019-05-15 | Basf Se | Method for manufacturing cmp composition and application thereof |
US9299585B2 (en) * | 2014-07-28 | 2016-03-29 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Method for chemical mechanical polishing substrates containing ruthenium and copper |
CN106916536B (zh) * | 2015-12-25 | 2021-04-20 | 安集微电子(上海)有限公司 | 一种碱性化学机械抛光液 |
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US10377921B2 (en) * | 2017-09-21 | 2019-08-13 | Rohm and Haas Electronics Materials CMP Holdings, Inc. | Chemical mechanical polishing method for cobalt |
US20200095502A1 (en) * | 2018-09-26 | 2020-03-26 | Versum Materials Us, Llc | High Oxide VS Nitride Selectivity, Low And Uniform Oxide Trench Dishing In Shallow Trench Isolation(STI) Chemical Mechanical Planarization Polishing(CMP) |
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Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20070051917A1 (en) * | 2005-09-08 | 2007-03-08 | Thomas Terence M | Polymeric barrier removal polishing slurry |
US20080148652A1 (en) * | 2006-12-21 | 2008-06-26 | Junaid Ahmed Siddiqui | Compositions for chemical mechanical planarization of copper |
JP2009049402A (ja) * | 2007-08-03 | 2009-03-05 | Rohm & Haas Electronic Materials Cmp Holdings Inc | バリヤ除去ポリマー研磨スラリー |
CN101679810A (zh) * | 2008-02-29 | 2010-03-24 | 株式会社Lg化学 | 化学机械抛光用含水浆液组合物及化学机械抛光方法 |
JP2010135792A (ja) * | 2008-12-03 | 2010-06-17 | Lg Chem Ltd | 1次化学的機械的研磨用スラリー組成物および化学的機械的研磨方法 |
JP2010153865A (ja) * | 2008-12-22 | 2010-07-08 | Rohm & Haas Electronic Materials Cmp Holdings Inc | バリヤ除去ポリマー研磨スラリー |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6435944B1 (en) | 1999-10-27 | 2002-08-20 | Applied Materials, Inc. | CMP slurry for planarizing metals |
US6740591B1 (en) * | 2000-11-16 | 2004-05-25 | Intel Corporation | Slurry and method for chemical mechanical polishing of copper |
US20050090104A1 (en) * | 2003-10-27 | 2005-04-28 | Kai Yang | Slurry compositions for chemical mechanical polishing of copper and barrier films |
KR100645957B1 (ko) | 2004-10-26 | 2006-11-14 | 삼성코닝 주식회사 | Cmp용 수성 슬러리 조성물 |
CN1900206B (zh) * | 2005-07-21 | 2011-01-05 | 安集微电子(上海)有限公司 | 化学机械抛光液及其用途 |
-
2011
- 2011-08-15 US US13/209,864 patent/US20130045599A1/en not_active Abandoned
-
2012
- 2012-08-03 JP JP2012173340A patent/JP6041095B2/ja active Active
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- 2012-08-09 DE DE102012015824A patent/DE102012015824A1/de not_active Withdrawn
- 2012-08-14 CN CN201210289359.6A patent/CN102950537B/zh active Active
- 2012-08-14 KR KR1020120089008A patent/KR101945221B1/ko active IP Right Grant
- 2012-08-16 FR FR1257819A patent/FR2979071B1/fr not_active Expired - Fee Related
Patent Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20070051917A1 (en) * | 2005-09-08 | 2007-03-08 | Thomas Terence M | Polymeric barrier removal polishing slurry |
CN1927975A (zh) * | 2005-09-08 | 2007-03-14 | 罗门哈斯电子材料Cmp控股股份有限公司 | 可除去聚合物阻挡层的抛光浆液 |
US20080148652A1 (en) * | 2006-12-21 | 2008-06-26 | Junaid Ahmed Siddiqui | Compositions for chemical mechanical planarization of copper |
JP2008160112A (ja) * | 2006-12-21 | 2008-07-10 | Dupont Air Products Nanomaterials Llc | 銅の化学機械平坦化用組成物 |
CN101240147A (zh) * | 2006-12-21 | 2008-08-13 | 杜邦纳米材料气体产品有限公司 | 用于铜的化学机械平坦化的组合物 |
JP2009049402A (ja) * | 2007-08-03 | 2009-03-05 | Rohm & Haas Electronic Materials Cmp Holdings Inc | バリヤ除去ポリマー研磨スラリー |
CN101679810A (zh) * | 2008-02-29 | 2010-03-24 | 株式会社Lg化学 | 化学机械抛光用含水浆液组合物及化学机械抛光方法 |
US20100184291A1 (en) * | 2008-02-29 | 2010-07-22 | Lg Chem, Ltd. | Aqueous slurry composition for chemical mechanical polishing and chemical mechanical polishing method |
JP2011515023A (ja) * | 2008-02-29 | 2011-05-12 | エルジー・ケム・リミテッド | 化学的機械的研磨用水系スラリー組成物及び化学的機械的研磨方法 |
JP2010135792A (ja) * | 2008-12-03 | 2010-06-17 | Lg Chem Ltd | 1次化学的機械的研磨用スラリー組成物および化学的機械的研磨方法 |
JP2010153865A (ja) * | 2008-12-22 | 2010-07-08 | Rohm & Haas Electronic Materials Cmp Holdings Inc | バリヤ除去ポリマー研磨スラリー |
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