TWI458817B - 化學機械研磨組成物及其相關方法 - Google Patents
化學機械研磨組成物及其相關方法 Download PDFInfo
- Publication number
- TWI458817B TWI458817B TW098123684A TW98123684A TWI458817B TW I458817 B TWI458817 B TW I458817B TW 098123684 A TW098123684 A TW 098123684A TW 98123684 A TW98123684 A TW 98123684A TW I458817 B TWI458817 B TW I458817B
- Authority
- TW
- Taiwan
- Prior art keywords
- mechanical polishing
- chemical mechanical
- weight
- polishing composition
- copolymer
- Prior art date
Links
- 238000005498 polishing Methods 0.000 title claims description 116
- 239000000126 substance Substances 0.000 title claims description 106
- 239000000203 mixture Substances 0.000 title claims description 104
- 238000000034 method Methods 0.000 title claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 57
- 239000002184 metal Substances 0.000 claims description 57
- 150000001875 compounds Chemical class 0.000 claims description 40
- 239000010949 copper Substances 0.000 claims description 35
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 30
- 229910052802 copper Inorganic materials 0.000 claims description 30
- 239000004065 semiconductor Substances 0.000 claims description 28
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 27
- 229920001577 copolymer Polymers 0.000 claims description 25
- 239000003112 inhibitor Substances 0.000 claims description 22
- 229920001427 mPEG Polymers 0.000 claims description 22
- OSSNTDFYBPYIEC-UHFFFAOYSA-N 1-ethenylimidazole Chemical compound C=CN1C=CN=C1 OSSNTDFYBPYIEC-UHFFFAOYSA-N 0.000 claims description 21
- 239000002253 acid Substances 0.000 claims description 21
- 238000000227 grinding Methods 0.000 claims description 21
- 239000007800 oxidant agent Substances 0.000 claims description 16
- 229910052698 phosphorus Inorganic materials 0.000 claims description 16
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 claims description 15
- CWYNVVGOOAEACU-UHFFFAOYSA-N Fe2+ Chemical compound [Fe+2] CWYNVVGOOAEACU-UHFFFAOYSA-N 0.000 claims description 15
- 239000011574 phosphorus Substances 0.000 claims description 15
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 14
- 229920002678 cellulose Polymers 0.000 claims description 12
- 230000002378 acidificating effect Effects 0.000 claims description 11
- 239000001913 cellulose Substances 0.000 claims description 11
- 239000008139 complexing agent Substances 0.000 claims description 9
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 8
- 229910052799 carbon Chemical group 0.000 claims description 8
- 229910052739 hydrogen Inorganic materials 0.000 claims description 7
- 239000001257 hydrogen Substances 0.000 claims description 7
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 7
- 235000012431 wafers Nutrition 0.000 description 28
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 13
- 235000010980 cellulose Nutrition 0.000 description 11
- 150000002148 esters Chemical class 0.000 description 9
- -1 ferrous metals Chemical class 0.000 description 9
- 239000002245 particle Substances 0.000 description 9
- 229920000388 Polyphosphate Polymers 0.000 description 8
- 239000001205 polyphosphate Substances 0.000 description 8
- 235000011176 polyphosphates Nutrition 0.000 description 8
- 239000012964 benzotriazole Substances 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 239000002244 precipitate Substances 0.000 description 7
- 150000003839 salts Chemical class 0.000 description 7
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 6
- 229920002134 Carboxymethyl cellulose Polymers 0.000 description 6
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 6
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 6
- 150000007513 acids Chemical class 0.000 description 6
- 230000004888 barrier function Effects 0.000 description 6
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 6
- 239000008367 deionised water Substances 0.000 description 6
- 229910021641 deionized water Inorganic materials 0.000 description 6
- DUDCYUDPBRJVLG-UHFFFAOYSA-N ethoxyethane methyl 2-methylprop-2-enoate Chemical compound CCOCC.COC(=O)C(C)=C DUDCYUDPBRJVLG-UHFFFAOYSA-N 0.000 description 6
- 239000003082 abrasive agent Substances 0.000 description 5
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 description 5
- 229910000420 cerium oxide Inorganic materials 0.000 description 5
- 238000007334 copolymerization reaction Methods 0.000 description 5
- NBZBKCUXIYYUSX-UHFFFAOYSA-N iminodiacetic acid Chemical compound OC(=O)CNCC(O)=O NBZBKCUXIYYUSX-UHFFFAOYSA-N 0.000 description 5
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 5
- BJEPYKJPYRNKOW-REOHCLBHSA-N (S)-malic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O BJEPYKJPYRNKOW-REOHCLBHSA-N 0.000 description 4
- YXIWHUQXZSMYRE-UHFFFAOYSA-N 1,3-benzothiazole-2-thiol Chemical compound C1=CC=C2SC(S)=NC2=C1 YXIWHUQXZSMYRE-UHFFFAOYSA-N 0.000 description 4
- YZEZMSPGIPTEBA-UHFFFAOYSA-N 2-n-(4,6-diamino-1,3,5-triazin-2-yl)-1,3,5-triazine-2,4,6-triamine Chemical compound NC1=NC(N)=NC(NC=2N=C(N)N=C(N)N=2)=N1 YZEZMSPGIPTEBA-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 4
- AEMRFAOFKBGASW-UHFFFAOYSA-N Glycolic acid Chemical compound OCC(O)=O AEMRFAOFKBGASW-UHFFFAOYSA-N 0.000 description 4
- 229910019142 PO4 Inorganic materials 0.000 description 4
- BJEPYKJPYRNKOW-UHFFFAOYSA-N alpha-hydroxysuccinic acid Natural products OC(=O)C(O)CC(O)=O BJEPYKJPYRNKOW-UHFFFAOYSA-N 0.000 description 4
- 235000010948 carboxy methyl cellulose Nutrition 0.000 description 4
- 239000001768 carboxy methyl cellulose Substances 0.000 description 4
- 239000008112 carboxymethyl-cellulose Substances 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 4
- 229910001431 copper ion Inorganic materials 0.000 description 4
- 239000003989 dielectric material Substances 0.000 description 4
- 229910052809 inorganic oxide Inorganic materials 0.000 description 4
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 description 4
- 239000001630 malic acid Substances 0.000 description 4
- 235000011090 malic acid Nutrition 0.000 description 4
- 235000021317 phosphate Nutrition 0.000 description 4
- 229920000642 polymer Polymers 0.000 description 4
- 238000006467 substitution reaction Methods 0.000 description 4
- KAESVJOAVNADME-UHFFFAOYSA-N 1H-pyrrole Natural products C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 description 3
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 3
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 3
- 239000000908 ammonium hydroxide Substances 0.000 description 3
- WAKZZMMCDILMEF-UHFFFAOYSA-H barium(2+);diphosphate Chemical compound [Ba+2].[Ba+2].[Ba+2].[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O WAKZZMMCDILMEF-UHFFFAOYSA-H 0.000 description 3
- 239000011230 binding agent Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 235000011180 diphosphates Nutrition 0.000 description 3
- 239000012776 electronic material Substances 0.000 description 3
- 238000009472 formulation Methods 0.000 description 3
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 3
- 229910001853 inorganic hydroxide Inorganic materials 0.000 description 3
- YSRVJVDFHZYRPA-UHFFFAOYSA-N melem Chemical compound NC1=NC(N23)=NC(N)=NC2=NC(N)=NC3=N1 YSRVJVDFHZYRPA-UHFFFAOYSA-N 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 3
- 239000010452 phosphate Substances 0.000 description 3
- 229920002635 polyurethane Polymers 0.000 description 3
- 239000004814 polyurethane Substances 0.000 description 3
- WHBMMWSBFZVSSR-UHFFFAOYSA-N 3-hydroxybutyric acid Chemical compound CC(O)CC(O)=O WHBMMWSBFZVSSR-UHFFFAOYSA-N 0.000 description 2
- CMGDVUCDZOBDNL-UHFFFAOYSA-N 4-methyl-2h-benzotriazole Chemical compound CC1=CC=CC2=NNN=C12 CMGDVUCDZOBDNL-UHFFFAOYSA-N 0.000 description 2
- RGHNJXZEOKUKBD-SQOUGZDYSA-N D-gluconic acid Chemical compound OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C(O)=O RGHNJXZEOKUKBD-SQOUGZDYSA-N 0.000 description 2
- DHMQDGOQFOQNFH-UHFFFAOYSA-N Glycine Chemical compound NCC(O)=O DHMQDGOQFOQNFH-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- KFSLWBXXFJQRDL-UHFFFAOYSA-N Peracetic acid Chemical compound CC(=O)OO KFSLWBXXFJQRDL-UHFFFAOYSA-N 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- ABLZXFCXXLZCGV-UHFFFAOYSA-N Phosphorous acid Chemical class OP(O)=O ABLZXFCXXLZCGV-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 229910052788 barium Inorganic materials 0.000 description 2
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 2
- NLAYIUHDCPKDHX-UHFFFAOYSA-L barium(2+) trioxidophosphanium Chemical compound [Ba+2].[O-]P([O-])=O NLAYIUHDCPKDHX-UHFFFAOYSA-L 0.000 description 2
- 125000003354 benzotriazolyl group Chemical group N1N=NC2=C1C=CC=C2* 0.000 description 2
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 description 2
- MNNHAPBLZZVQHP-UHFFFAOYSA-N diammonium hydrogen phosphate Chemical compound [NH4+].[NH4+].OP([O-])([O-])=O MNNHAPBLZZVQHP-UHFFFAOYSA-N 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- XBDQKXXYIPTUBI-UHFFFAOYSA-N dimethylselenoniopropionate Natural products CCC(O)=O XBDQKXXYIPTUBI-UHFFFAOYSA-N 0.000 description 2
- XPPKVPWEQAFLFU-UHFFFAOYSA-J diphosphate(4-) Chemical compound [O-]P([O-])(=O)OP([O-])([O-])=O XPPKVPWEQAFLFU-UHFFFAOYSA-J 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- LNTHITQWFMADLM-UHFFFAOYSA-N gallic acid Chemical compound OC(=O)C1=CC(O)=C(O)C(O)=C1 LNTHITQWFMADLM-UHFFFAOYSA-N 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- SEOVTRFCIGRIMH-UHFFFAOYSA-N indole-3-acetic acid Chemical compound C1=CC=C2C(CC(=O)O)=CNC2=C1 SEOVTRFCIGRIMH-UHFFFAOYSA-N 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- QQVIHTHCMHWDBS-UHFFFAOYSA-N isophthalic acid Chemical compound OC(=O)C1=CC=CC(C(O)=O)=C1 QQVIHTHCMHWDBS-UHFFFAOYSA-N 0.000 description 2
- 239000004310 lactic acid Substances 0.000 description 2
- 235000014655 lactic acid Nutrition 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 150000001247 metal acetylides Chemical class 0.000 description 2
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 2
- 238000003801 milling Methods 0.000 description 2
- 239000000178 monomer Substances 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 235000006408 oxalic acid Nutrition 0.000 description 2
- UEZVMMHDMIWARA-UHFFFAOYSA-M phosphonate Chemical compound [O-]P(=O)=O UEZVMMHDMIWARA-UHFFFAOYSA-M 0.000 description 2
- XFZRQAZGUOTJCS-UHFFFAOYSA-N phosphoric acid;1,3,5-triazine-2,4,6-triamine Chemical compound OP(O)(O)=O.NC1=NC(N)=NC(N)=N1 XFZRQAZGUOTJCS-UHFFFAOYSA-N 0.000 description 2
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- WQGWDDDVZFFDIG-UHFFFAOYSA-N pyrogallol Chemical compound OC1=CC=CC(O)=C1O WQGWDDDVZFFDIG-UHFFFAOYSA-N 0.000 description 2
- YGSDEFSMJLZEOE-UHFFFAOYSA-N salicylic acid Chemical compound OC(=O)C1=CC=CC=C1O YGSDEFSMJLZEOE-UHFFFAOYSA-N 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 229910003468 tantalcarbide Inorganic materials 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 2
- TUSDEZXZIZRFGC-UHFFFAOYSA-N 1-O-galloyl-3,6-(R)-HHDP-beta-D-glucose Natural products OC1C(O2)COC(=O)C3=CC(O)=C(O)C(O)=C3C3=C(O)C(O)=C(O)C=C3C(=O)OC1C(O)C2OC(=O)C1=CC(O)=C(O)C(O)=C1 TUSDEZXZIZRFGC-UHFFFAOYSA-N 0.000 description 1
- RTBFRGCFXZNCOE-UHFFFAOYSA-N 1-methylsulfonylpiperidin-4-one Chemical compound CS(=O)(=O)N1CCC(=O)CC1 RTBFRGCFXZNCOE-UHFFFAOYSA-N 0.000 description 1
- JOELYYRJYYLNRR-UHFFFAOYSA-N 2,3,5-trihydroxybenzoic acid Chemical compound OC(=O)C1=CC(O)=CC(O)=C1O JOELYYRJYYLNRR-UHFFFAOYSA-N 0.000 description 1
- GLDQAMYCGOIJDV-UHFFFAOYSA-N 2,3-dihydroxybenzoic acid Chemical compound OC(=O)C1=CC=CC(O)=C1O GLDQAMYCGOIJDV-UHFFFAOYSA-N 0.000 description 1
- OZAIFHULBGXAKX-UHFFFAOYSA-N 2-(2-cyanopropan-2-yldiazenyl)-2-methylpropanenitrile Chemical group N#CC(C)(C)N=NC(C)(C)C#N OZAIFHULBGXAKX-UHFFFAOYSA-N 0.000 description 1
- GLVYLTSKTCWWJR-UHFFFAOYSA-N 2-carbonoperoxoylbenzoic acid Chemical compound OOC(=O)C1=CC=CC=C1C(O)=O GLVYLTSKTCWWJR-UHFFFAOYSA-N 0.000 description 1
- 244000215068 Acacia senegal Species 0.000 description 1
- 229920002126 Acrylic acid copolymer Polymers 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- KLSJWNVTNUYHDU-UHFFFAOYSA-N Amitrole Chemical group NC1=NC=NN1 KLSJWNVTNUYHDU-UHFFFAOYSA-N 0.000 description 1
- 239000004254 Ammonium phosphate Substances 0.000 description 1
- 239000004114 Ammonium polyphosphate Substances 0.000 description 1
- 229910052580 B4C Inorganic materials 0.000 description 1
- AEMOLEFTQBMNLQ-BZINKQHNSA-N D-Guluronic Acid Chemical compound OC1O[C@H](C(O)=O)[C@H](O)[C@@H](O)[C@H]1O AEMOLEFTQBMNLQ-BZINKQHNSA-N 0.000 description 1
- RGHNJXZEOKUKBD-UHFFFAOYSA-N D-gluconic acid Natural products OCC(O)C(O)C(O)C(O)C(O)=O RGHNJXZEOKUKBD-UHFFFAOYSA-N 0.000 description 1
- AEMOLEFTQBMNLQ-VANFPWTGSA-N D-mannopyranuronic acid Chemical compound OC1O[C@H](C(O)=O)[C@@H](O)[C@H](O)[C@@H]1O AEMOLEFTQBMNLQ-VANFPWTGSA-N 0.000 description 1
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 description 1
- 239000005696 Diammonium phosphate Substances 0.000 description 1
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 1
- 239000001263 FEMA 3042 Substances 0.000 description 1
- IAJILQKETJEXLJ-UHFFFAOYSA-N Galacturonsaeure Natural products O=CC(O)C(O)C(O)C(O)C(O)=O IAJILQKETJEXLJ-UHFFFAOYSA-N 0.000 description 1
- WQZGKKKJIJFFOK-GASJEMHNSA-N Glucose Natural products OC[C@H]1OC(O)[C@H](O)[C@@H](O)[C@@H]1O WQZGKKKJIJFFOK-GASJEMHNSA-N 0.000 description 1
- 239000004471 Glycine Substances 0.000 description 1
- 229920002907 Guar gum Polymers 0.000 description 1
- 229920000084 Gum arabic Polymers 0.000 description 1
- 229920000569 Gum karaya Polymers 0.000 description 1
- QNAYBMKLOCPYGJ-REOHCLBHSA-N L-alanine Chemical compound C[C@H](N)C(O)=O QNAYBMKLOCPYGJ-REOHCLBHSA-N 0.000 description 1
- CKLJMWTZIZZHCS-REOHCLBHSA-N L-aspartic acid Chemical compound OC(=O)[C@@H](N)CC(O)=O CKLJMWTZIZZHCS-REOHCLBHSA-N 0.000 description 1
- 235000010643 Leucaena leucocephala Nutrition 0.000 description 1
- 240000007472 Leucaena leucocephala Species 0.000 description 1
- 229920000161 Locust bean gum Polymers 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 229920000877 Melamine resin Polymers 0.000 description 1
- 239000004368 Modified starch Substances 0.000 description 1
- 229920000881 Modified starch Polymers 0.000 description 1
- YXHXDEBLSQQHQE-UHFFFAOYSA-N N.N.OP(O)=O Chemical compound N.N.OP(O)=O YXHXDEBLSQQHQE-UHFFFAOYSA-N 0.000 description 1
- 229910002651 NO3 Inorganic materials 0.000 description 1
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 description 1
- MIPARUODWSCDNS-UHFFFAOYSA-N OP(O)=O.NC1=NC(N)=NC(N)=N1 Chemical compound OP(O)=O.NC1=NC(N)=NC(N)=N1 MIPARUODWSCDNS-UHFFFAOYSA-N 0.000 description 1
- LRBQNJMCXXYXIU-PPKXGCFTSA-N Penta-digallate-beta-D-glucose Natural products OC1=C(O)C(O)=CC(C(=O)OC=2C(=C(O)C=C(C=2)C(=O)OC[C@@H]2[C@H]([C@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)[C@@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)[C@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)O2)OC(=O)C=2C=C(OC(=O)C=3C=C(O)C(O)=C(O)C=3)C(O)=C(O)C=2)O)=C1 LRBQNJMCXXYXIU-PPKXGCFTSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 241000934878 Sterculia Species 0.000 description 1
- KDYFGRWQOYBRFD-UHFFFAOYSA-N Succinic acid Natural products OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 description 1
- 240000004584 Tamarindus indica Species 0.000 description 1
- 235000004298 Tamarindus indica Nutrition 0.000 description 1
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 229920001615 Tragacanth Polymers 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 229910026551 ZrC Inorganic materials 0.000 description 1
- JXOOCQBAIRXOGG-UHFFFAOYSA-N [B].[B].[B].[B].[B].[B].[B].[B].[B].[B].[B].[B].[Al] Chemical compound [B].[B].[B].[B].[B].[B].[B].[B].[B].[B].[B].[B].[Al] JXOOCQBAIRXOGG-UHFFFAOYSA-N 0.000 description 1
- OTCHGXYCWNXDOA-UHFFFAOYSA-N [C].[Zr] Chemical compound [C].[Zr] OTCHGXYCWNXDOA-UHFFFAOYSA-N 0.000 description 1
- VYIGFALZSKQAPJ-UHFFFAOYSA-L [Fe+2].[O-]P([O-])=O Chemical compound [Fe+2].[O-]P([O-])=O VYIGFALZSKQAPJ-UHFFFAOYSA-L 0.000 description 1
- SPIDMIKLEMNARN-UHFFFAOYSA-N [Mn+6] Chemical class [Mn+6] SPIDMIKLEMNARN-UHFFFAOYSA-N 0.000 description 1
- JARJPMSNORWIHF-UHFFFAOYSA-N [NH4+].O.OP(O)([O-])=O Chemical compound [NH4+].O.OP(O)([O-])=O JARJPMSNORWIHF-UHFFFAOYSA-N 0.000 description 1
- DZHMRSPXDUUJER-UHFFFAOYSA-N [amino(hydroxy)methylidene]azanium;dihydrogen phosphate Chemical compound NC(N)=O.OP(O)(O)=O DZHMRSPXDUUJER-UHFFFAOYSA-N 0.000 description 1
- 235000010489 acacia gum Nutrition 0.000 description 1
- 239000000205 acacia gum Substances 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 235000004279 alanine Nutrition 0.000 description 1
- 235000010443 alginic acid Nutrition 0.000 description 1
- 239000000783 alginic acid Substances 0.000 description 1
- 229920000615 alginic acid Polymers 0.000 description 1
- 229960001126 alginic acid Drugs 0.000 description 1
- 150000004781 alginic acids Chemical class 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- VXAUWWUXCIMFIM-UHFFFAOYSA-M aluminum;oxygen(2-);hydroxide Chemical compound [OH-].[O-2].[Al+3] VXAUWWUXCIMFIM-UHFFFAOYSA-M 0.000 description 1
- LFVGISIMTYGQHF-UHFFFAOYSA-N ammonium dihydrogen phosphate Chemical compound [NH4+].OP(O)([O-])=O LFVGISIMTYGQHF-UHFFFAOYSA-N 0.000 description 1
- 229910000387 ammonium dihydrogen phosphate Inorganic materials 0.000 description 1
- 229910000148 ammonium phosphate Inorganic materials 0.000 description 1
- 235000019289 ammonium phosphates Nutrition 0.000 description 1
- 235000019826 ammonium polyphosphate Nutrition 0.000 description 1
- 229920001276 ammonium polyphosphate Polymers 0.000 description 1
- JFCQEDHGNNZCLN-UHFFFAOYSA-N anhydrous glutaric acid Natural products OC(=O)CCCC(O)=O JFCQEDHGNNZCLN-UHFFFAOYSA-N 0.000 description 1
- 125000000129 anionic group Chemical group 0.000 description 1
- 239000000420 anogeissus latifolia wall. gum Substances 0.000 description 1
- 235000003704 aspartic acid Nutrition 0.000 description 1
- 239000000305 astragalus gummifer gum Substances 0.000 description 1
- 159000000009 barium salts Chemical class 0.000 description 1
- RCUAPGYXYWSYKO-UHFFFAOYSA-J barium(2+);phosphonato phosphate Chemical compound [Ba+2].[Ba+2].[O-]P([O-])(=O)OP([O-])([O-])=O RCUAPGYXYWSYKO-UHFFFAOYSA-J 0.000 description 1
- AEMOLEFTQBMNLQ-UHFFFAOYSA-N beta-D-galactopyranuronic acid Natural products OC1OC(C(O)=O)C(O)C(O)C1O AEMOLEFTQBMNLQ-UHFFFAOYSA-N 0.000 description 1
- OQFSQFPPLPISGP-UHFFFAOYSA-N beta-carboxyaspartic acid Natural products OC(=O)C(N)C(C(O)=O)C(O)=O OQFSQFPPLPISGP-UHFFFAOYSA-N 0.000 description 1
- 239000003139 biocide Substances 0.000 description 1
- 229910001593 boehmite Inorganic materials 0.000 description 1
- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 description 1
- SXDBWCPKPHAZSM-UHFFFAOYSA-N bromic acid Chemical class OBr(=O)=O SXDBWCPKPHAZSM-UHFFFAOYSA-N 0.000 description 1
- 239000000872 buffer Substances 0.000 description 1
- KDYFGRWQOYBRFD-NUQCWPJISA-N butanedioic acid Chemical compound O[14C](=O)CC[14C](O)=O KDYFGRWQOYBRFD-NUQCWPJISA-N 0.000 description 1
- 150000001732 carboxylic acid derivatives Chemical group 0.000 description 1
- 125000002843 carboxylic acid group Chemical group 0.000 description 1
- 235000010418 carrageenan Nutrition 0.000 description 1
- 239000000679 carrageenan Substances 0.000 description 1
- 229920001525 carrageenan Polymers 0.000 description 1
- 229940113118 carrageenan Drugs 0.000 description 1
- 150000001844 chromium Chemical class 0.000 description 1
- 150000001860 citric acid derivatives Chemical class 0.000 description 1
- 150000001868 cobalt Chemical class 0.000 description 1
- 239000000571 coke Substances 0.000 description 1
- 150000001879 copper Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 229910000388 diammonium phosphate Inorganic materials 0.000 description 1
- 235000019838 diammonium phosphate Nutrition 0.000 description 1
- DNUFCIOKWJELSH-UHFFFAOYSA-O diazanium dioxido(oxo)phosphanium Chemical compound [NH4+].[NH4+].[O-][P+]([O-])=O DNUFCIOKWJELSH-UHFFFAOYSA-O 0.000 description 1
- AXFZAZQUMXZWJV-UHFFFAOYSA-N diazanium;phosphono phosphate Chemical compound [NH4+].[NH4+].OP(O)(=O)OP([O-])([O-])=O AXFZAZQUMXZWJV-UHFFFAOYSA-N 0.000 description 1
- LMBWSYZSUOEYSN-UHFFFAOYSA-N diethyldithiocarbamic acid Chemical compound CCN(CC)C(S)=S LMBWSYZSUOEYSN-UHFFFAOYSA-N 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 239000012153 distilled water Substances 0.000 description 1
- 229950004394 ditiocarb Drugs 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- ZSFDBVJMDCMTBM-UHFFFAOYSA-N ethane-1,2-diamine;phosphoric acid Chemical compound NCCN.OP(O)(O)=O ZSFDBVJMDCMTBM-UHFFFAOYSA-N 0.000 description 1
- DOMLXBPXLNDFAB-UHFFFAOYSA-N ethoxyethane;methyl prop-2-enoate Chemical compound CCOCC.COC(=O)C=C DOMLXBPXLNDFAB-UHFFFAOYSA-N 0.000 description 1
- CADNYOZXMIKYPR-UHFFFAOYSA-B ferric pyrophosphate Chemical compound [Fe+3].[Fe+3].[Fe+3].[Fe+3].[O-]P([O-])(=O)OP([O-])([O-])=O.[O-]P([O-])(=O)OP([O-])([O-])=O.[O-]P([O-])(=O)OP([O-])([O-])=O CADNYOZXMIKYPR-UHFFFAOYSA-B 0.000 description 1
- 229940104869 fluorosilicate Drugs 0.000 description 1
- 229940074391 gallic acid Drugs 0.000 description 1
- 235000004515 gallic acid Nutrition 0.000 description 1
- 239000000499 gel Substances 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical group [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000000174 gluconic acid Substances 0.000 description 1
- 235000012208 gluconic acid Nutrition 0.000 description 1
- 239000008103 glucose Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 235000010417 guar gum Nutrition 0.000 description 1
- 239000000665 guar gum Substances 0.000 description 1
- 229960002154 guar gum Drugs 0.000 description 1
- 235000019314 gum ghatti Nutrition 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- FAHBNUUHRFUEAI-UHFFFAOYSA-M hydroxidooxidoaluminium Chemical compound O[Al]=O FAHBNUUHRFUEAI-UHFFFAOYSA-M 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- QWPPOHNGKGFGJK-UHFFFAOYSA-N hypochlorous acid Chemical class ClO QWPPOHNGKGFGJK-UHFFFAOYSA-N 0.000 description 1
- 239000003617 indole-3-acetic acid Substances 0.000 description 1
- 239000000138 intercalating agent Substances 0.000 description 1
- ICIWUVCWSCSTAQ-UHFFFAOYSA-M iodate Chemical compound [O-]I(=O)=O ICIWUVCWSCSTAQ-UHFFFAOYSA-M 0.000 description 1
- 150000002505 iron Chemical class 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910000398 iron phosphate Inorganic materials 0.000 description 1
- WBJZTOZJJYAKHQ-UHFFFAOYSA-K iron(3+) phosphate Chemical compound [Fe+3].[O-]P([O-])([O-])=O WBJZTOZJJYAKHQ-UHFFFAOYSA-K 0.000 description 1
- 235000010494 karaya gum Nutrition 0.000 description 1
- 239000000231 karaya gum Substances 0.000 description 1
- 229940039371 karaya gum Drugs 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 235000010420 locust bean gum Nutrition 0.000 description 1
- 239000000711 locust bean gum Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- MMIPFLVOWGHZQD-UHFFFAOYSA-N manganese(3+) Chemical class [Mn+3] MMIPFLVOWGHZQD-UHFFFAOYSA-N 0.000 description 1
- YZTQKMVBEGUONQ-UHFFFAOYSA-N manganese(4+) Chemical class [Mn+4] YZTQKMVBEGUONQ-UHFFFAOYSA-N 0.000 description 1
- JDSHMPZPIAZGSV-UHFFFAOYSA-N melamine Chemical compound NC1=NC(N)=NC(N)=N1 JDSHMPZPIAZGSV-UHFFFAOYSA-N 0.000 description 1
- 229920003145 methacrylic acid copolymer Polymers 0.000 description 1
- 229940117841 methacrylic acid copolymer Drugs 0.000 description 1
- 229920000609 methyl cellulose Polymers 0.000 description 1
- 239000001923 methylcellulose Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 235000019426 modified starch Nutrition 0.000 description 1
- 235000019837 monoammonium phosphate Nutrition 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- MPQXHAGKBWFSNV-UHFFFAOYSA-N oxidophosphanium Chemical class [PH3]=O MPQXHAGKBWFSNV-UHFFFAOYSA-N 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- FJKROLUGYXJWQN-UHFFFAOYSA-N papa-hydroxy-benzoic acid Natural products OC(=O)C1=CC=C(O)C=C1 FJKROLUGYXJWQN-UHFFFAOYSA-N 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 235000010987 pectin Nutrition 0.000 description 1
- 239000001814 pectin Substances 0.000 description 1
- 229920001277 pectin Polymers 0.000 description 1
- 229960000292 pectin Drugs 0.000 description 1
- KHIWWQKSHDUIBK-UHFFFAOYSA-N periodic acid Chemical compound OI(=O)(=O)=O KHIWWQKSHDUIBK-UHFFFAOYSA-N 0.000 description 1
- 150000004965 peroxy acids Chemical class 0.000 description 1
- JRKICGRDRMAZLK-UHFFFAOYSA-L persulfate group Chemical group S(=O)(=O)([O-])OOS(=O)(=O)[O-] JRKICGRDRMAZLK-UHFFFAOYSA-L 0.000 description 1
- VXTFGYMINLXJPW-UHFFFAOYSA-N phosphinane Chemical compound C1CCPCC1 VXTFGYMINLXJPW-UHFFFAOYSA-N 0.000 description 1
- AQSJGOWTSHOLKH-UHFFFAOYSA-N phosphite(3-) Chemical class [O-]P([O-])[O-] AQSJGOWTSHOLKH-UHFFFAOYSA-N 0.000 description 1
- XZTOTRSSGPPNTB-UHFFFAOYSA-N phosphono dihydrogen phosphate;1,3,5-triazine-2,4,6-triamine Chemical compound NC1=NC(N)=NC(N)=N1.OP(O)(=O)OP(O)(O)=O XZTOTRSSGPPNTB-UHFFFAOYSA-N 0.000 description 1
- 150000003013 phosphoric acid derivatives Chemical class 0.000 description 1
- 125000004437 phosphorous atom Chemical group 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 230000003389 potentiating effect Effects 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 235000019260 propionic acid Nutrition 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 229940079877 pyrogallol Drugs 0.000 description 1
- IUVKMZGDUIUOCP-BTNSXGMBSA-N quinbolone Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H]([C@]4(C=CC(=O)C=C4CC3)C)CC[C@@]21C)C1=CCCC1 IUVKMZGDUIUOCP-BTNSXGMBSA-N 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229960004889 salicylic acid Drugs 0.000 description 1
- GGCZERPQGJTIQP-UHFFFAOYSA-N sodium;9,10-dioxoanthracene-2-sulfonic acid Chemical compound [Na+].C1=CC=C2C(=O)C3=CC(S(=O)(=O)O)=CC=C3C(=O)C2=C1 GGCZERPQGJTIQP-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
- 239000011029 spinel Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- WSANLGASBHUYGD-UHFFFAOYSA-N sulfidophosphanium Chemical class S=[PH3] WSANLGASBHUYGD-UHFFFAOYSA-N 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- LRBQNJMCXXYXIU-NRMVVENXSA-N tannic acid Chemical compound OC1=C(O)C(O)=CC(C(=O)OC=2C(=C(O)C=C(C=2)C(=O)OC[C@@H]2[C@H]([C@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)[C@@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)[C@@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)O2)OC(=O)C=2C=C(OC(=O)C=3C=C(O)C(O)=C(O)C=3)C(O)=C(O)C=2)O)=C1 LRBQNJMCXXYXIU-NRMVVENXSA-N 0.000 description 1
- 235000015523 tannic acid Nutrition 0.000 description 1
- 229940033123 tannic acid Drugs 0.000 description 1
- 229920002258 tannic acid Polymers 0.000 description 1
- 239000011975 tartaric acid Substances 0.000 description 1
- 235000002906 tartaric acid Nutrition 0.000 description 1
- VKFFEYLSKIYTSJ-UHFFFAOYSA-N tetraazanium;phosphonato phosphate Chemical compound [NH4+].[NH4+].[NH4+].[NH4+].[O-]P([O-])(=O)OP([O-])([O-])=O VKFFEYLSKIYTSJ-UHFFFAOYSA-N 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 description 1
- JOPDZQBPOWAEHC-UHFFFAOYSA-H tristrontium;diphosphate Chemical compound [Sr+2].[Sr+2].[Sr+2].[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O JOPDZQBPOWAEHC-UHFFFAOYSA-H 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- LRXTYHSAJDENHV-UHFFFAOYSA-H zinc phosphate Chemical compound [Zn+2].[Zn+2].[Zn+2].[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O LRXTYHSAJDENHV-UHFFFAOYSA-H 0.000 description 1
- 229910000165 zinc phosphate Inorganic materials 0.000 description 1
- OMSYGYSPFZQFFP-UHFFFAOYSA-J zinc pyrophosphate Chemical compound [Zn+2].[Zn+2].[O-]P([O-])(=O)OP([O-])([O-])=O OMSYGYSPFZQFFP-UHFFFAOYSA-J 0.000 description 1
- UHVMMEOXYDMDKI-JKYCWFKZSA-L zinc;1-(5-cyanopyridin-2-yl)-3-[(1s,2s)-2-(6-fluoro-2-hydroxy-3-propanoylphenyl)cyclopropyl]urea;diacetate Chemical compound [Zn+2].CC([O-])=O.CC([O-])=O.CCC(=O)C1=CC=C(F)C([C@H]2[C@H](C2)NC(=O)NC=2N=CC(=CC=2)C#N)=C1O UHVMMEOXYDMDKI-JKYCWFKZSA-L 0.000 description 1
- CZPRKINNVBONSF-UHFFFAOYSA-M zinc;dioxido(oxo)phosphanium Chemical compound [Zn+2].[O-][P+]([O-])=O CZPRKINNVBONSF-UHFFFAOYSA-M 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/04—Aqueous dispersions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Materials Engineering (AREA)
- Dispersion Chemistry (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Description
本發明係關於半導體晶圓材料之化學機械研磨。更特定而言,本發明係關於化學機械研磨組成物以及在介電質及阻障材料的存在下使用該化學機械研磨組成物研磨半導體晶圓上之金屬互連件的方法。
典型地,半導體晶圓係具有介電層的矽晶圓,該介電層含有複數個經配置以在該介電層內形成電路互連件(circuit interconnect)圖案的溝槽(trench)。該圖案配置通常具有鑲嵌結構(damascene structure)或雙重鑲嵌結構(dual damascene structure)。阻障層係覆蓋該圖案化之介電層,而金屬層則覆蓋該阻障層。該金屬層具有至少足夠的厚度以利用金屬填滿該圖案化之溝槽而形成電路互連件。
化學機械研磨製程經常包含複數個研磨步驟。舉例而言,第一步驟係以初始高速率移除過量互連金屬,例如銅。經該第一步驟移除後,第二步驟研磨可移除餘留在該金屬互連件外部之阻障層上的金屬。隨後的研磨係自半導體晶圓的下層介電層移除阻障物,以在該介電層及金屬互連件上提供經平坦研磨的表面。
在半導體基板上之溝槽或凹槽(trough)中的金屬提供形成金屬電路之金屬線。欲克服的其中一項問題係研磨操作傾向自各個溝槽或凹槽移除金屬,造成該等金屬的碟形凹陷(recessed dishing)。由於碟形凹陷會使金屬電路之臨界尺寸上產生變化,故碟形凹陷係非所欲的。為了減少碟形凹陷,係在較低的研磨壓力下進行研磨。不過,僅是降低研磨壓力將會使研磨需要持續延長一段期間。然而,碟形凹陷會在整個延長的期間持續產生。
美國第7,086,935號專利案(Wang)描述含有甲基纖維素、丙烯酸/甲基丙烯酸共聚物、苯并三唑(BTA)及可混溶的溶劑之無研磨劑銅調配物用於圖案化晶圓之用途。Wang教示及描述之調配物能夠以低銅碟形凹陷的方式移除及清理銅,但是在快速研磨的期間,該調配物在研磨墊及晶圓上沉澱綠色的Cu-BTA化合物。這些沉澱物需要研磨墊之研磨後清理以避免與膠狀沉澱物相關之研磨移除率降低;且其需要晶圓之研磨後清理以避免缺陷產生。該等額外的清理步驟需要強且昂貴的清理化合物,並有因延遲晶圓產量所造成之相關“所有權成本”。
因此,仍需要能夠產生低碟形凹陷且同時具有高移除率的化學機械研磨組成物,其在短暫數秒步驟的研磨時間後留下互連金屬殘留物已清除之表面。
本發明之一態樣中,係提供一種化學機械研磨組成物,其係有用於含有銅互連金屬之圖案化半導體晶圓之化學機械研磨,該化學機械研磨組成物包括:0.01至15重量%的銅互連金屬用抑制劑;0.005至5重量%的聚(乙二醇)甲醚(甲基)丙烯酸酯與1-乙烯基咪唑之共聚物;以及水;其中,該化學機械研磨組成物具有酸性pH值。
本發明之另一態樣中,係提供一種化學機械研磨組成物,其係有用於含有銅互連金屬之圖案化半導體晶圓之化學機械研磨,該化學機械研磨組成物包括:0.01至15重量%的銅互連金屬用抑制劑;0.005至5重量%的聚(乙二醇)甲醚(甲基)丙烯酸酯與1-乙烯基咪唑之共聚物;0.05至20重量%的下式I之水溶性酸化合物:
[式中,R為氫或含碳化合物];0.01至15重量%的銅互連金屬用錯合劑;0.01至15重量%的含磷化合物;0至25重量%的氧化劑;以及水;其中,該化學機械研磨組成物具有酸性pH值。
本發明之另一態樣中,係提供一種化學機械研磨組成物,其係有用於含有銅互連金屬之圖案化半導體晶圓之化學機械研磨,該化學機械研磨組成物包括:銅互連金屬用抑制劑;0.001至15重量%的水溶性纖維素;0.05至20重量%的下式I之水溶性酸化合物:
[式中,R為氫或含碳化合物];0.005至5重量%的聚(乙二醇)甲醚(甲基)丙烯酸酯與1-乙烯基咪唑之共聚物;0.01至15重量%的銅互連金屬用錯合劑;0.01至15重量%的含磷化合物;0至25重量%的氧化劑;以及水;其中,該化學機械研磨組成物具有酸性pH值。
本發明之另一態樣中,係提供一種化學機械研磨組成物,其係有用於含有非鐵金屬之圖案化半導體晶圓之化學機械研磨,該化學機械研磨組成物包括:0.01至15重量%的非鐵金屬用抑制劑;0.005至5重量%的聚(乙二醇)甲醚(甲基)丙烯酸酯與1-乙烯基咪唑之共聚物;以及水;其中,該化學機械研磨組成物具有酸性pH值。
本發明之另一態樣中,係提供一種化學機械研磨組成物,其係有用於含有非鐵金屬之圖案化半導體晶圓之化學機械研磨,該化學機械研磨組成物包括:非鐵金屬用抑制劑;0.001至15重量%的水溶性纖維素;0.05至20重量%的下式I之水溶性酸化合物:
[式中,R為氫或含碳化合物];0.005至5重量%的聚(乙二醇)甲醚(甲基)丙烯酸酯與1-乙烯基咪唑之共聚物;0.01至15重量%的非鐵金屬用錯合劑;0.01至15重量%的含磷化合物;0至25重量%的氧化劑;以及水;其中,該化學機械研磨組成物具有酸性pH值。
本發明之另一態樣中,係提供一種用於含有非鐵金屬之半導體晶圓之化學機械研磨之方法,包括:(a)提供化學機械研磨組成物,該化學機械研磨組成物包括1至25重量%的氧化劑;0.01至15重量%的非鐵金屬用抑制劑;0.005至5重量%的聚(乙二醇)甲醚(甲基)丙烯酸酯與1-乙烯基咪唑之共聚物;以及水;其中,該化學機械研磨組成物具有酸性pH值;(b)提供化學機械研磨墊;(c)提供含有非鐵金屬之半導體晶圓;(d)在該化學機械研磨墊與該半導體晶圓間形成動態接觸(dynamic contact);以及(e)在該化學機械研磨墊與該半導體晶圓間之界面處或接近該界面處施予研磨溶液。
本發明之另一態樣中,係提供一種用於含有非鐵金屬之半導體晶圓之化學機械研磨之方法,包括:(a)提供化學機械研磨組成物,該化學機械研磨組成物包括氧化劑;非
鐵金屬用抑制劑;0.001至15重量%的水溶性纖維素;0.05至20重量%的下式I之水溶性酸化合物:
[式中,R為氫或含碳化合物];0.005至5重量%的聚(乙二醇)甲醚(甲基)丙烯酸酯與1-乙烯基咪唑之共聚物;0.01至15重量%的非鐵金屬用錯合劑;0.01至15重量%的磷化合物;1至25重量%的氧化劑;以及水;其中,該化學機械研磨組成物具有酸性pH值;(b)提供化學機械研磨墊;(c)提供含有非鐵金屬之半導體晶圓;(d)在該化學機械研磨墊與該半導體晶圓間形成動態接觸;以及(e)在該化學機械研磨墊與該半導體晶圓間之界面處或接近該界面處施予研磨溶液。
本發明之化學機械研磨組成物及方法在半導體晶圓暴露於化學機械研磨及化學機械研磨組成物時,提供良好的金屬移除率,進行金屬清除,及產生金屬互連件之低碟形凹陷,該化學機械研磨組成物包含:抑制劑;水溶性改質纖維素;下式I之水溶性酸化合物:
[式中,R為氫或含碳化合物];聚(乙二醇)甲醚(甲基)丙烯酸酯與1-乙烯基咪唑之共聚物;視需要地,銅互連金屬用錯合劑;視需要地,含磷化合物;視需要地,氧化劑;以及餘量水(balance water)。添加水溶性酸化合物降低與Cu-BTA Cu+1
)沉澱物有關之綠色沾污。
基於本說明書之目的,Cu-BTA沉澱物包含非液體(例如固體、凝膠及聚合物),且可包含Cu+2
離子、尖晶石沉澱物、類尖晶石沉澱物及雜質。由研磨經驗,在研磨條件下當銅離子(+1)
及BTA之濃度乘積超過Ksp
時,會形成不溶性Cu-BTA沉澱物。Cu-BTA的沉澱在酸性研磨溶液中顯現出依下列平衡式(1)而產生:
BTAH+Cu+ ← (慢) (快) →
Cu-BTA+H+
(1)。
本發明之化學機械研磨組成物包含抑制劑以藉由靜態蝕刻或其他移除機制控制非鐵金屬的移除,例如銅互連件移除率。調整抑制劑的濃度以藉由保護金屬免於靜態蝕刻而調整互連金屬移除率。較佳地,該化學機械研磨組成物包含0.01至15重量%的抑制劑。最佳地,該化學機械研磨組成物包含0.2至1.0重量%的抑制劑。在一些具體實施例中,該抑制劑包括抑制劑之混合物。在一些具體實施例中,該抑制劑係選自唑類抑制劑,其對研磨具有銅及銀互連件之晶圓特別有效。這些具體實施例之一些態樣中,該抑制劑係選自苯并三唑(BTA)、巰基苯并噻唑(MBT)、甲苯基三唑(tolytriazole,TTA)、咪唑及其組合。唑類抑制劑之組合可增加或降低銅移除率。這些具體實施例之一些態樣中,該抑制劑為BTA,其對銅及銀係特別有效的抑制劑。
本發明之化學機械研磨組成物包含聚(乙二醇)甲醚(甲基)丙烯酸酯與1-乙烯基咪唑之共聚物。在一些具體實施例中,該化學機械研磨組成物包含0.005至5重量%,較佳係0.05至1重量%,更佳係0.05至0.5重量%,又更佳係0.09至0.25重量%的9:1至1:9,較佳係5:1至1:5,更佳係3:1至1:3,再佳係2:1至1:2,又更佳係1.5:1至1:1.5,又再更佳係1.2:1至1:1.2,最佳係1:1(以重量為基準計)之聚(乙二醇)甲醚(甲基)丙烯酸酯與1-乙烯基咪唑之共聚物。在一些具體實施例中,該化學機械研磨組成物包含0.005至5重量%,較佳係0.05至1重量%,更佳係0.05至0.5重量%,又更佳係0.09至0.25重量%的9:1至1:9,較佳係5:1至1:5,更佳係3:1至1:3,再佳係2:1至1:2,又更佳係1.5:1至1:1.5,又再更佳係1.2:1至1:1.2,最佳係1:1(以重量為基準計)之聚(乙二醇)甲醚甲基丙烯酸酯與1-乙烯基咪唑之共聚物。在一些具體實施例中,該化學機械研磨組成物包含0.005至5重量%,較佳係0.05至1重量%,更佳係0.05至0.5重量%,又更佳係0.09至0.25重量%的9:1至1:9,較佳係5:1至1:5,更佳係3:1至1:3,再佳係2:1至1:2,又更佳係1.5:1至1:1.5,又再更佳係1.2:1至1:1.2,最佳係1:1(以重量為基準計)之聚(乙二醇)甲醚丙烯酸酯與1-乙烯基咪唑之共聚物。在一些具體實施例中,該化學機械研磨組成物包含0.005至5重量%,較佳係0.05至1重量%,更佳係0.05至0.5重量%,又更佳係0.09至0.25重量%的9:1至1:9,較佳係5:1至1:5,更佳係3:1至1:3,再佳係2:1至1:2,又更佳係1.5:1至1:1.5,又再更佳係1.2:1至1:1.2,最佳係1:1(以重量為基準計)之聚(乙二醇)甲醚(甲基)丙烯酸酯與1-乙烯基咪唑之共聚物,該共聚物具有5,000至1,000,000;較佳係5,000至500,000;更佳係10,000至250,000;又更佳係10,000至100,000,再佳係10,000至50,000;又再更佳係20,000至40,000之重量平均分子量(Mw
)。在一些具體實施例中,該化學機械研磨組成物包含0.005至5重量%,較佳係0.05至1重量%,更佳係0.05至0.5重量%,又更佳係0.09至0.25重量%的9:1至1:9,較佳係5::1至1:5,更佳係3:1至1:3,再佳係2:1至1:2,又更佳係1.5:1至1:1.5,又再更佳係1.2:1至1:1.2,最佳係1:1(以重量為基準計)之聚(乙二醇)甲醚甲基丙烯酸酯與1-乙烯基咪唑之共聚物,該共聚物具有5,000至1,000,000;較佳係5,000至500,000;更佳係10,000至250,000;又更佳係10,000至100,000,再佳係10,000至50,000;又再更佳係20,000至40,000之重量平均分子量(Mw
)。
本發明之化學機械研磨組成物視需要地包含水溶性纖維素。在一些具體實施例中,該化學機械研磨組成物包含0至15重量%,較佳係0.001至15重量%,更佳係0.005至5重量%,又更佳係0.01至3重量%的水溶性纖維素。在本發明之一些具體實施例中,該水溶性纖維素係經羧酸官能性改質的水溶性改質纖維素。例示性改質纖維素包含陰離子性膠(anionic gum),例如洋菜膠、阿拉伯膠、甘地膠(ghatti gum)、加拉亞膠(karaya gum)、古亞膠(guar gum)、果膠、刺槐豆膠(locust bean gum)、黃蓍膠(tragacanth gum)、羅望子膠(tamarind gum)、鹿角菜膠、及三仙膠、改質澱粉、海藻酸、甘露糖醛酸、古羅糖醛酸(guluronic acid)及其衍生物和共聚物之至少一者。這些具體實施例之一些態樣中,該水溶性改質纖維素係羧甲基纖維素(CMC)。這些具體實施例之一些態樣中,CMC具有0.1至3.0的取代度,重量平均分子量(Mw
)為1,000至1,000,000。這些具體實施例之一些態樣中,CMC具有0.7至1.2的取代度,重量平均分子量為40,000至250,000。基於本說明書之目的,CMC之取代度係在纖維素分子中各個葡萄糖酐單元上經取代之羥基數。取代度可被視為在CMC中羧酸基團“密度”的計量。
本發明之化學機械研磨組成物視需要地包含下式I之水溶性酸化合物:
[式中,R為氫或含碳化合物]。這些酸化合物能夠錯合具有單價(+1)
之銅離子及二價(+2)
銅離子。在研磨期間,該水溶性酸化合物顯現出與足夠的銅離子數錯合而降低Cu-BTA沉澱物的形成及控制Cu+2
離子形成的速率,如下式(2):
2Cu+ →
Cu0
+Cu+2
(2)。
在本發明之一些具體實施例中,該化學機械研磨組成物包含0至20重量%,較佳係0.05至20重量%,更佳係0.1至10重量%的式I之水溶性酸化合物。在這些具體實施例之一些態樣中,該化學機械研磨組成物包含≧0.4重量%,較佳係0.4至5重量%的式I之水溶性酸化合物。在這些具體實施例之一些態樣中,式I之水溶性酸化合物係選自亞胺基二乙酸(IDA);乙二胺四乙酸(EDTA);及其組合。在這些具體實施例之一些態樣中,式I之水溶性酸化合物係EDTA。在這些具體實施例之一些態樣中,式I之水溶性酸化合物係IDA。
本發明之化學機械研磨組成物視需要地包含非鐵金屬用錯合劑。該錯合劑可促進金屬膜(例如銅)之移除率。在一些具體實施例中,該化學機械研磨組成物包含0至15重量%,較佳係0.01至15重量%,更佳係0.1至1重量%的錯合劑。例示性錯合劑包含,例如,乙酸、檸檬酸、乙醯乙酸乙酯、乙醇酸、乳酸、蘋果酸、草酸、水楊酸、二乙基二硫代胺基甲酸鈉、琥珀酸、酒石酸、巰乙酸、甘胺酸、丙胺酸、天門冬胺酸、乙二胺、三甲基二胺、丙二酸、戊二酸、3-羥基丁酸、丙酸、鄰苯二甲酸、間苯二甲酸、3-羥基水楊酸、3,5-二羥基水楊酸、沒食子酸、葡萄糖酸、兒茶酚、苯三酚(pyrogallol)、單寧酸,包含其鹽及其混合物。在這些具體實施例之一些態樣中,該錯合劑係選自乙酸、檸檬酸、乙醯乙酸乙酯、乙醇酸、乳酸、蘋果酸、草酸及其組合。在這些具體實施例之一些態樣中,該錯合劑係蘋果酸。
本發明之化學機械研磨組成物視需要地包含含磷化合物。在一些具體實施例中,該化學機械研磨組成物包括0至15重量%,較佳係0.01至15重量%,更佳係0.05至10重量%,又更佳係0.1至5重量%,又再更佳係0.3至2重量%的含磷化合物。基於本說明書之目的,“含磷”化合物係任何含有磷原子之化合物。在一些具體實施例中,該含磷化合物係選自磷酸鹽、焦磷酸鹽、多磷酸鹽、膦酸鹽,包含其酸類、鹽類、經混合之酸的鹽類、酯類、部分酯類、經混合之酯類,及其混合物。這些具體實施例之一些態樣中,該含磷化合物係選自磷酸鋅、焦磷酸鋅、多磷酸鋅、膦酸鋅、磷酸釹、焦磷酸銨、多磷酸銨、膦酸銨、磷酸二銨、焦磷酸二銨、多磷酸二銨、膦酸二銨、磷酸胍、焦磷酸胍、多磷酸胍、膦酸胍、磷酸鐵、焦磷酸鐵、多磷酸鐵、膦酸鐵、磷酸鈰、焦磷酸鈰、多磷酸鈰、膦酸鈰、磷酸乙二胺、磷酸哌、焦磷酸哌、膦酸哌、磷酸三聚氰胺、磷酸二三聚氰胺、焦磷酸三聚氰胺、多磷酸三聚氰胺、膦酸三聚氰胺、磷酸蜜白胺(melam phosphate)、焦磷酸蜜白胺(melam pyrophosphate)、多磷酸蜜白胺(melam polyphosphate)、膦酸蜜白胺(melam phosphonate)、磷酸蜜勒胺(melem phosphate)、焦磷酸蜜勒胺(melem pyrophosphate)、多磷酸蜜勒胺(melempolyphosphate)、膦酸蜜勒胺(melem phosphonate)、磷酸二氰二胺(dicyanodiamide phosphate)、磷酸脲、其酸類、鹽類、經混合之酸的鹽類、酯類、部分酯類、經混合之酯類、及其混合物。這些具體實施例之一些態樣中,該含磷化合物係選自氧化膦、硫化膦及膦烷(phosphorinane)、及膦酸鹽、亞磷酸鹽及次膦酸鹽(phosphinate)、其酸類、鹽類、經混合之酸的鹽類、酯類、部分酯類及經混合之酯類。在一些具體實施例中,該含磷化合物係磷酸銨。在一些具體實施例中,該含磷化合物係磷酸二氫銨。
本發明之化學機械研磨組成物視需要地包含氧化劑。在一些具體實施例中,該化學機械研磨組成物包含0至25重量%,較佳係1至25重量%,更佳係5至10重量%的氧化劑。在一些具體實施例中,該氧化劑係選自過氧化氫(H2
O2
)、單過硫酸鹽、碘酸鹽、過苯二甲酸鎂、過乙酸及其他過酸、過硫酸鹽、溴酸鹽、過碘酸鹽、硝酸鹽、鐵鹽、鈰鹽、錳(III)鹽、錳(IV)鹽及錳(VI)鹽、銀鹽、銅鹽、鉻鹽、鈷鹽、鹵素、次氯酸鹽及其混合物。在一些具體實施例中,該氧化劑係過氧化氫。當該化學機械研磨組成物包含不安定的氧化劑(例如過氧化氫),較佳係在使用時將該氧化劑併入該化學機械研磨組成物中。
本發明之化學機械研磨組成物較佳係依靠去離子水或蒸餾水來補足餘量以限制伴隨的雜質。
本發明之化學機械研磨組成物在寬幅pH值範圍內提供效力。本發明之化學機械研磨組成物有用的pH值範圍從2延伸至5。本發明之一些具體實施例中,該化學機械研磨組成物在使用時呈現2至5,較佳係2至4,更佳係2.5至4的pH值。適用於調整本發明之化學機械研磨組成物之pH值的酸類包含例如硝酸、硫酸、鹽酸、及磷酸。適用於調整本發明之化學機械研磨組成物之pH值的鹼類包含例如氫氧化銨及氫氧化鉀。
本發明之化學機械研磨組成物視需要地包含研磨劑。在本發明之一些具體實施例中,該化學機械研磨組成物包含0至3重量%的研磨劑。這些具體實施例之一些態樣中,該化學機械研磨組成物包含≦1重量%的研磨劑。在本發明之一些具體實施例中,該化學機械研磨組成物不含研磨劑。
適用於與本發明併用的研磨劑包含例如平均粒徑≦500奈米(nm),較佳係≦100nm,更佳係≦70nm的研磨劑。基於本說明書之目的,粒徑係指該研磨劑的平均粒子尺寸。在一些具體實施例中,該研磨劑係選自膠體研磨劑,其可包含添加劑(例如分散劑、界面活性劑、緩衝劑、及殺生物劑),以改善膠體研磨劑(例如購自AZ電子材料公司的膠體氧化矽)的安定性。在一些具體實施例中,該研磨劑係選自煙燻、沉澱及聚結的研磨劑。在一些具體實施例中,該研磨劑係選自無機氧化物、無機氫氧化物、無機氫氧化物氧化物、金屬硼化物、金屬碳化物、金屬氮化物、聚合物粒子及包括前述各者之至少一者的混合物。適合的無機氧化物包含例如氧化矽(SiO2
)、氧化鋁(Al2
O3
)、氧化鋯(ZrO2
)、氧化鈰(CeO2
)、氧化鎂(MnO2
)、氧化鈦(TiO2
)或包括前述氧化物之至少一者的組合。適合的無機氫氧化物氧化物包含例如氫氧化鋁氧化物(“水鋁礦(boehmite)”)。若有需要,亦可利用這些無機氧化物之改質型,例如經有機聚合物塗佈之無機氧化物粒子及經無機塗佈之粒子。適合的金屬碳化物、硼化物及氮化物包含例如碳化矽、氮化矽、碳氮化矽(SiCN)、碳化硼、碳化鎢、碳化鋯、硼化鋁、碳化鉭、碳化鈦、或包括前述金屬碳化物、硼化物及氮化物之至少一者的組合。若有需要,亦可利用金剛石作為研磨劑。其他可供選擇的研磨劑亦包含聚合物粒子、經塗佈之聚合物粒子、及界面活性劑安定化的粒子。若利用研磨劑時,較佳的研磨劑係氧化矽。
本發明之化學機械研磨組成物及方法特別適用於具有銅互連件之半導體晶圓的化學機械研磨。儘管如此,咸信本發明之化學機械研磨組成物亦適用於研磨含有下列者的半導體晶圓:其他導電金屬互連件,例如鋁、鎢、鉑、鈀、金、或銥;阻障層或襯膜(liner film),例如鉭、氮化鉭、鈦、或氮化鈦;以及下層介電層。基於本說明書之目的,術語介電質係指具介電常數k的半導體材料,包含低k介電材料及超低k介電材料。本發明之化學機械研磨組成物及方法對預防複數晶圓構件的侵蝕係優異的,該構件係例如多孔或非多孔性低k介電質、有機及無機低k介電質、有機矽酸鹽玻璃(OSC)、氟矽酸鹽玻璃(FSG)、碳摻雜氧化物(CDO)、原矽酸四乙酯(TEOS)及衍生自TEOS之氧化矽。本發明之化學機械研磨組成物亦可用於ECMP(電化學機械研磨)。
本發明之一些具體實施例將於下列實施例中予以詳細說明。
在裝配有氮氣沖洗、攪拌器及溫度控制機構之5升密閉型批式反應器中製備聚(乙二醇)甲醚甲基丙烯酸酯及1-乙烯基咪唑的1:1(重量比)共聚物。密封該反應器並利用氮氣沖洗,以在該反應器內提供氮環境。然後將去離子水(1,800克(g))導入反應器中,並將反應器內容物加熱至85℃。將反應器內容物之溫度維持在85℃的同時,將含有去離子水(170.3克);聚(乙二醇)甲醚甲基丙烯酸酯(425.4克)及1-乙烯基咪唑(425.3克)之單體混合物以120分鐘的時間逐步加入該反應器中。將含有去離子水(388.4克);經取代之偶氮腈化合物(購自杜邦(Du Pont)之Vazo(25.6克)及氫氧化銨(63.9克)之混合物的起始劑進料以140分鐘的時間與單體混合物饋料同時逐步加入該反應器中。在起始劑饋入後,將反應器內容物在85℃保持30分鐘,之後再將含有去離子水(85.2克);經取代之偶氮腈化合物(購自杜邦之)(4.3克);及氫氧化銨(21.3克)之混合物的注射槽(shot chase)加入反應器中。然後,再將反應器內容物在85℃保持120分鐘,之後將額外的425.1克去離子水饋入反應器中。再使反應器內容物冷卻至約60℃。然後自該反應器內容物單離出產物共聚物。
實施例2係使用兩種化學機械研磨組成物。該兩種化學機械研磨組成物包含有0.30重量%BTA;0.22重量%蘋果酸;0.32重量%羧甲基纖維素(CMC);1.3重量%亞胺基二乙酸(IDA);2重量%磷酸二氫銨及9重量%過氧化氫。第一化學機械研磨組成物(組成物1)復包含有0.10重量%的1:1(以重量為基準計)之聚(乙二醇)甲醚甲基丙烯酸酯與1-乙烯基咪唑的共聚物,重量平均分子量(Mw
)為約36,000,其係根據實施例1予以製備。第二化學機械研磨組成物(組成物2)復包含有0.20重量%的1:1(以重量為基準計)之聚(乙二醇)甲醚甲基丙烯酸酯與1-乙烯基咪唑的共聚物,重量平均分子量(Mw
)為約36,000,其係根據實施例1予以製備。在使用前,過氧化氫係加至該化學機械研磨組成物的最後成分。該化學機械研磨組成物之所記成分濃度係使用時之濃度。在添加過氧化氫之前,以硝酸將該化學機械研磨組成物之pH值調整至4.1。添加過氧化氫後之pH值為約3.9。
表1係以組成物1測定的銅移除率數據。銅移除率實驗係在表1所規定之下壓力(down force)條件下,以160毫升(ml)/分鐘之研磨溶液流動率,100轉(rpm)之工作台轉速及94rpm之載具轉速,使用應用材料公司(Applied Materials,Inc.)之配備有ISRM檢測器系統的Mirra 200mm研磨機,利用IC1010TM
聚胺基甲酸酯研磨墊(商業上購自羅門哈斯電子材料CMP公司(Rohm and Haas Electronic Materials CMP Inc.))來進行。使用之銅空白晶圓(blanket wafer)係經電鍍且具15K厚度(商業上購自Silyb)。該銅移除率係使用Jordan Valley JVX-5200T量測工具來測定。每個銅移除實驗係各自進行兩次。表1所示之數據係重複實驗的平均。
表2係使用組成物1與組成物2兩者在具有銅互連件及MIT-754圖案之300mm圖案晶圓(商業上購自ATDF)上來提供銅移除率及碟型凹陷特性。在1.5psi(10.3kPa)下壓力的條件下(除非另作說明),以250毫升/分鐘之研磨溶液流動率,77rpm之載盤轉速及71rpm之載具轉速,使用應用材料公司之配備有ISRM檢測器系統的Reflexion 300mm研磨機,利用在載盤1上之CUP4410聚胺基甲酸酯研磨墊及在載盤2上之IC1010TM
聚胺基甲酸酯研磨墊(皆為商業上購自羅門哈新電子材料CMP公司之研磨墊)來進行。該兩種研磨墊皆使用AD3BG-150855金剛石墊整理器(商業上購自Kinik公司)來整理。銅移除率係使用Jordan Valley-5200T量測工具來測定。表2所記述之碟型凹陷特性係使用Dimension Vx 310原子力輪廓儀(atomic force profiler,AFP))來測定。
Claims (10)
- 一種化學機械研磨組成物,係有用於含有銅互連金屬之圖案化半導體晶圓之化學機械研磨,該化學機械研磨組成物包括:0.01至15重量%的銅互連金屬用抑制劑;0.005至5重量%的聚(乙二醇)甲醚(甲基)丙烯酸酯與1-乙烯基咪唑之共聚物;以及水;其中,該化學機械研磨組成物具有酸性pH值。
- 如申請專利範圍第1項之化學機械研磨組成物,其中,該共聚物係9:1至1:9(以重量為基準計)之聚(乙二醇)甲醚(甲基)丙烯酸酯與1-乙烯基咪唑之共聚物,其中,該共聚物具有5,000至1,000,000之重量平均分子量。
- 如申請專利範圍第1項之化學機械研磨組成物,復包括1至25重量%的氧化劑。
- 如申請專利範圍第1項之化學機械研磨組成物,復包括0.001至15重量%的水溶性纖維素。
- 如申請專利範圍第1項之化學機械研磨組成物,復包括0.01至15重量%的錯合劑。
- 如申請專利範圍第1項之化學機械研磨組成物,復包括0.01至15重量%的含磷化合物。
- 如申請專利範圍第1項之化學機械研磨組成物,其中,該化學機械研磨組成物係不含研磨劑。
- 如申請專利範圍第1項之化學機械研磨組成物,復包括0.05至20重量%的下式I之水溶性酸化合物:
- 一種化學機械研磨組成物,係有用於含有非鐵金屬之圖案化半導體晶圓之化學機械研磨,該化學機械研磨組成物包括0.01至15重量%的非鐵金屬用抑制劑;0.005至5重量%的聚(乙二醇)甲醚(甲基)丙烯酸酯與1-乙烯基咪唑之共聚物;以及水;其中,該化學機械研磨組成物具有酸性pH值。
- 一種用於含有非鐵金屬之半導體晶圓之化學機械研磨之方法,包括:(a)提供化學機械研磨組成物,該化學機械研磨組成物包括1至25重量%的氧化劑;0.01至15重量%的非鐵金屬用抑制劑;0.005至5重量%的聚(乙二醇)甲醚(甲基)丙烯酸酯與1-乙烯基咪唑之共聚物;以及水;其中,該化學機械研磨組成物具有酸性pH值;(b)提供化學機械研磨墊; (c)提供含有非鐵金屬之半導體晶圓;(d)在該化學機械研磨墊與該半導體晶圓間形成動態接觸;以及(e)在該化學機械研磨墊與該半導體晶圓間之界面處或接近該界面處施予該研磨溶液。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/185,600 US8540893B2 (en) | 2008-08-04 | 2008-08-04 | Chemical mechanical polishing composition and methods relating thereto |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201006916A TW201006916A (en) | 2010-02-16 |
TWI458817B true TWI458817B (zh) | 2014-11-01 |
Family
ID=41226060
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW098123684A TWI458817B (zh) | 2008-08-04 | 2009-07-14 | 化學機械研磨組成物及其相關方法 |
Country Status (6)
Country | Link |
---|---|
US (2) | US8540893B2 (zh) |
EP (1) | EP2151482A1 (zh) |
JP (1) | JP5543148B2 (zh) |
KR (1) | KR101044304B1 (zh) |
CN (1) | CN101649164B (zh) |
TW (1) | TWI458817B (zh) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101974297A (zh) * | 2010-11-12 | 2011-02-16 | 大连三达奥克化学股份有限公司 | 核/壳型复合纳米磨料铜化学机械抛光液 |
US8440097B2 (en) | 2011-03-03 | 2013-05-14 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Stable, concentratable, water soluble cellulose free chemical mechanical polishing composition |
US8435896B2 (en) | 2011-03-03 | 2013-05-07 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Stable, concentratable chemical mechanical polishing composition and methods relating thereto |
US8512427B2 (en) * | 2011-09-29 | 2013-08-20 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Acrylate polyurethane chemical mechanical polishing layer |
JP6198740B2 (ja) * | 2012-09-18 | 2017-09-20 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
US20140308814A1 (en) * | 2013-04-15 | 2014-10-16 | Applied Materials, Inc | Chemical mechanical polishing methods and systems including pre-treatment phase and pre-treatment compositions |
US20150104940A1 (en) * | 2013-10-11 | 2015-04-16 | Air Products And Chemicals Inc. | Barrier chemical mechanical planarization composition and method thereof |
CN105097425A (zh) * | 2014-04-18 | 2015-11-25 | 中芯国际集成电路制造(上海)有限公司 | 一种化学机械研磨的方法 |
US9944828B2 (en) | 2014-10-21 | 2018-04-17 | Cabot Microelectronics Corporation | Slurry for chemical mechanical polishing of cobalt |
CN107148457B (zh) * | 2014-10-21 | 2019-07-09 | 嘉柏微电子材料股份公司 | 钴抛光促进剂 |
KR102525356B1 (ko) | 2014-10-21 | 2023-04-25 | 씨엠씨 머티리얼즈, 인코포레이티드 | 코발트 파임 제어제 |
EP3209815B1 (en) | 2014-10-21 | 2021-12-29 | CMC Materials, Inc. | Corrosion inhibitors and related compositions and methods |
KR101943702B1 (ko) * | 2016-05-12 | 2019-01-29 | 삼성에스디아이 주식회사 | 구리 연마용 cmp 슬러리 조성물 및 이를 이용한 연마 방법 |
US10181408B2 (en) * | 2017-01-31 | 2019-01-15 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing method for tungsten using polyglycols and polyglycol derivatives |
US20210371702A1 (en) * | 2020-05-28 | 2021-12-02 | Taiwan Semiconductor Manufacturing Company Ltd. | Slurry composition and method for polishing and integratged circuit |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI241328B (en) * | 2001-05-18 | 2005-10-11 | Rohm & Haas Elect Mat | Chemical mechanical polishing compositions |
TW200613521A (en) * | 2004-07-01 | 2006-05-01 | Rohm & Haas Elect Mat | Chemical mechanical polishing compositions and methods relating thereto |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1102821A4 (en) * | 1998-06-10 | 2004-05-19 | Rodel Inc | COMPOSITION AND METHOD FOR CMP POLISHING METAL |
US6443812B1 (en) * | 1999-08-24 | 2002-09-03 | Rodel Holdings Inc. | Compositions for insulator and metal CMP and methods relating thereto |
WO2002083804A1 (en) * | 2001-04-12 | 2002-10-24 | Rodel Holdings, Inc. | Polishing composition having a surfactant |
US6615717B1 (en) * | 2001-06-18 | 2003-09-09 | Xerox Corporation | Symmetrical parallel duplex paper path device |
US20030119692A1 (en) | 2001-12-07 | 2003-06-26 | So Joseph K. | Copper polishing cleaning solution |
US7736405B2 (en) * | 2003-05-12 | 2010-06-15 | Advanced Technology Materials, Inc. | Chemical mechanical polishing compositions for copper and associated materials and method of using same |
TWI288046B (en) * | 2003-11-14 | 2007-10-11 | Showa Denko Kk | Polishing composition and polishing method |
WO2005047410A1 (en) * | 2003-11-14 | 2005-05-26 | Showa Denko K.K. | Polishing composition and polishing method |
WO2005049674A1 (de) | 2003-11-20 | 2005-06-02 | Basf Aktiengesellschaft | Wasserlösliche copolymere von monoethylenisch ungesättigten polyalkylenoxidmonomeren und mindestens ein stickstoffatom enthaltenden dipolaren monomeren |
US20050136671A1 (en) * | 2003-12-22 | 2005-06-23 | Goldberg Wendy B. | Compositions and methods for low downforce pressure polishing of copper |
US7303993B2 (en) * | 2004-07-01 | 2007-12-04 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing compositions and methods relating thereto |
US7086935B2 (en) * | 2004-11-24 | 2006-08-08 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Cellulose-containing polishing compositions and methods relating thereto |
US7435356B2 (en) * | 2004-11-24 | 2008-10-14 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Abrasive-free chemical mechanical polishing compositions and methods relating thereto |
US7842192B2 (en) * | 2006-02-08 | 2010-11-30 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Multi-component barrier polishing solution |
TWI402335B (zh) * | 2006-09-08 | 2013-07-21 | Kao Corp | 研磨液組合物 |
-
2008
- 2008-08-04 US US12/185,600 patent/US8540893B2/en not_active Expired - Fee Related
-
2009
- 2009-03-11 EP EP09154939A patent/EP2151482A1/en not_active Withdrawn
- 2009-07-14 TW TW098123684A patent/TWI458817B/zh not_active IP Right Cessation
- 2009-08-03 CN CN2009101611783A patent/CN101649164B/zh not_active Expired - Fee Related
- 2009-08-03 KR KR1020090071224A patent/KR101044304B1/ko not_active IP Right Cessation
- 2009-08-04 JP JP2009181307A patent/JP5543148B2/ja active Active
-
2013
- 2013-04-01 US US13/854,267 patent/US8563436B2/en not_active Expired - Fee Related
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI241328B (en) * | 2001-05-18 | 2005-10-11 | Rohm & Haas Elect Mat | Chemical mechanical polishing compositions |
TW200613521A (en) * | 2004-07-01 | 2006-05-01 | Rohm & Haas Elect Mat | Chemical mechanical polishing compositions and methods relating thereto |
Also Published As
Publication number | Publication date |
---|---|
KR20100015289A (ko) | 2010-02-12 |
JP5543148B2 (ja) | 2014-07-09 |
KR101044304B1 (ko) | 2011-06-29 |
US20100029079A1 (en) | 2010-02-04 |
EP2151482A1 (en) | 2010-02-10 |
JP2010045351A (ja) | 2010-02-25 |
US8563436B2 (en) | 2013-10-22 |
CN101649164A (zh) | 2010-02-17 |
US8540893B2 (en) | 2013-09-24 |
US20130217230A1 (en) | 2013-08-22 |
CN101649164B (zh) | 2013-02-13 |
TW201006916A (en) | 2010-02-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI458817B (zh) | 化學機械研磨組成物及其相關方法 | |
TWI385226B (zh) | 用於移除聚合物阻障之研磨漿液 | |
JP5091400B2 (ja) | 無砥粒ケミカルメカニカルポリッシング組成物 | |
TWI478227B (zh) | 用於基板之化學機械研磨之方法 | |
TWI447188B (zh) | 低沾污研磨組成物 | |
JP6118502B2 (ja) | 安定した濃縮可能なケミカルメカニカル研磨組成物及びそれに関連する方法 | |
TWI487760B (zh) | 含銅之圖案化晶圓之研磨 | |
KR101945221B1 (ko) | 구리의 화학 기계적 연마 방법 | |
JP6118501B2 (ja) | 安定した濃縮可能な水溶性セルロースフリーのケミカルメカニカル研磨組成物 | |
JP2009004748A (ja) | アルカリ性バリヤ研磨スラリー | |
JP2005217396A (ja) | 銅の低ダウンフォース圧力研磨のための組成物及び方法 | |
JP2011082512A (ja) | 砥粒無含有化学機械研磨組成物 | |
KR20080013728A (ko) | 무기 산화물 연마제를 이용한 구리의 평탄화 개선용 조성물및 그 방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |