FR2979071B1 - Procede de polissage chimico-mecanique du cuivre - Google Patents

Procede de polissage chimico-mecanique du cuivre

Info

Publication number
FR2979071B1
FR2979071B1 FR1257819A FR1257819A FR2979071B1 FR 2979071 B1 FR2979071 B1 FR 2979071B1 FR 1257819 A FR1257819 A FR 1257819A FR 1257819 A FR1257819 A FR 1257819A FR 2979071 B1 FR2979071 B1 FR 2979071B1
Authority
FR
France
Prior art keywords
copper
mechanical polishing
chemical mechanical
polishing
chemical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR1257819A
Other languages
English (en)
French (fr)
Other versions
FR2979071A1 (fr
Inventor
Qianqiu Ye
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
DuPont Electronic Materials Holding Inc
Original Assignee
Rohm and Haas Electronic Materials CMP Holdings Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm and Haas Electronic Materials CMP Holdings Inc filed Critical Rohm and Haas Electronic Materials CMP Holdings Inc
Publication of FR2979071A1 publication Critical patent/FR2979071A1/fr
Application granted granted Critical
Publication of FR2979071B1 publication Critical patent/FR2979071B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/062—Manufacture or treatment of conductive parts of the interconnections by smoothing of conductive parts, e.g. by planarisation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
FR1257819A 2011-08-15 2012-08-16 Procede de polissage chimico-mecanique du cuivre Expired - Fee Related FR2979071B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US13/209,864 US20130045599A1 (en) 2011-08-15 2011-08-15 Method for chemical mechanical polishing copper

Publications (2)

Publication Number Publication Date
FR2979071A1 FR2979071A1 (fr) 2013-02-22
FR2979071B1 true FR2979071B1 (fr) 2016-08-26

Family

ID=47625346

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1257819A Expired - Fee Related FR2979071B1 (fr) 2011-08-15 2012-08-16 Procede de polissage chimico-mecanique du cuivre

Country Status (7)

Country Link
US (1) US20130045599A1 (https=)
JP (1) JP6041095B2 (https=)
KR (1) KR101945221B1 (https=)
CN (1) CN102950537B (https=)
DE (1) DE102012015824A1 (https=)
FR (1) FR2979071B1 (https=)
TW (1) TWI594310B (https=)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101931930B1 (ko) * 2011-12-21 2018-12-24 바스프 에스이 Cmp 조성물의 제조 방법 및 그의 적용
US9299585B2 (en) * 2014-07-28 2016-03-29 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method for chemical mechanical polishing substrates containing ruthenium and copper
CN106916536B (zh) * 2015-12-25 2021-04-20 安集微电子（上海）有限公司 一种碱性化学机械抛光液
CN107145614B (zh) * 2016-03-01 2020-06-30 中国科学院微电子研究所 一种cmp工艺仿真方法及仿真系统
US10377921B2 (en) * 2017-09-21 2019-08-13 Rohm and Haas Electronics Materials CMP Holdings, Inc. Chemical mechanical polishing method for cobalt
US20200095502A1 (en) * 2018-09-26 2020-03-26 Versum Materials Us, Llc High Oxide VS Nitride Selectivity, Low And Uniform Oxide Trench Dishing In Shallow Trench Isolation(STI) Chemical Mechanical Planarization Polishing(CMP)
WO2020091242A1 (ko) * 2018-10-31 2020-05-07 영창케미칼 주식회사 구리 배리어층 연마용 슬러리 조성물
JP7803851B2 (ja) * 2019-09-04 2026-01-21 シーエムシー マテリアルズ リミティド ライアビリティ カンパニー ポリシリコンｃｍｐ用組成物および方法
JP7409899B2 (ja) * 2020-02-18 2024-01-09 株式会社フジミインコーポレーテッド 研磨用組成物、研磨方法、および半導体基板の製造方法
JP7519862B2 (ja) * 2020-10-05 2024-07-22 花王株式会社 酸化珪素膜用研磨液組成物
CN114975234A (zh) * 2021-02-24 2022-08-30 中国科学院微电子研究所 一种半导体器件的制造方法
US20240342856A1 (en) * 2023-04-17 2024-10-17 Taiwan Semiconductor Manufacturing Co., Ltd. Methods of Forming an Abrasive Slurry and Methods for Chemical-Mechanical Polishing

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6435944B1 (en) 1999-10-27 2002-08-20 Applied Materials, Inc. CMP slurry for planarizing metals
US6740591B1 (en) * 2000-11-16 2004-05-25 Intel Corporation Slurry and method for chemical mechanical polishing of copper
US20050090104A1 (en) * 2003-10-27 2005-04-28 Kai Yang Slurry compositions for chemical mechanical polishing of copper and barrier films
KR100645957B1 (ko) 2004-10-26 2006-11-14 삼성코닝 주식회사 Ｃｍｐ용 수성 슬러리 조성물
CN1900206B (zh) * 2005-07-21 2011-01-05 安集微电子（上海）有限公司 化学机械抛光液及其用途
TWI385226B (zh) * 2005-09-08 2013-02-11 羅門哈斯電子材料Ｃｍｐ控股公司 用於移除聚合物阻障之研磨漿液
US20080148652A1 (en) * 2006-12-21 2008-06-26 Junaid Ahmed Siddiqui Compositions for chemical mechanical planarization of copper
US20090031636A1 (en) * 2007-08-03 2009-02-05 Qianqiu Ye Polymeric barrier removal polishing slurry
KR101202720B1 (ko) * 2008-02-29 2012-11-19 주식회사 엘지화학 화학적 기계적 연마용 수계 슬러리 조성물 및 화학적 기계적 연마 방법
KR101084676B1 (ko) * 2008-12-03 2011-11-22 주식회사 엘지화학 1차 화학적 기계적 연마용 슬러리 조성물 및 화학적 기계적 연마 방법
US20100159807A1 (en) * 2008-12-22 2010-06-24 Jinru Bian Polymeric barrier removal polishing slurry

Also Published As

Publication number Publication date
KR20130020585A (ko) 2013-02-27
CN102950537B (zh) 2016-06-01
TW201320173A (zh) 2013-05-16
DE102012015824A1 (de) 2013-02-21
US20130045599A1 (en) 2013-02-21
TWI594310B (zh) 2017-08-01
JP6041095B2 (ja) 2016-12-07
JP2013042132A (ja) 2013-02-28
KR101945221B1 (ko) 2019-02-07
CN102950537A (zh) 2013-03-06
FR2979071A1 (fr) 2013-02-22

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