JP2012199531A - 安定した濃縮可能な水溶性セルロースフリーのケミカルメカニカル研磨組成物 - Google Patents
安定した濃縮可能な水溶性セルロースフリーのケミカルメカニカル研磨組成物 Download PDFInfo
- Publication number
- JP2012199531A JP2012199531A JP2012046432A JP2012046432A JP2012199531A JP 2012199531 A JP2012199531 A JP 2012199531A JP 2012046432 A JP2012046432 A JP 2012046432A JP 2012046432 A JP2012046432 A JP 2012046432A JP 2012199531 A JP2012199531 A JP 2012199531A
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- Prior art keywords
- chemical mechanical
- mechanical polishing
- polishing composition
- weight
- water
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 238000005498 polishing Methods 0.000 title claims abstract description 237
- 239000000126 substance Substances 0.000 title claims abstract description 180
- 239000000203 mixture Substances 0.000 title claims abstract description 164
- 229910052751 metal Inorganic materials 0.000 claims abstract description 46
- 239000002184 metal Substances 0.000 claims abstract description 46
- KAESVJOAVNADME-UHFFFAOYSA-N Pyrrole Chemical compound C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 claims abstract description 33
- 239000003112 inhibitor Substances 0.000 claims abstract description 29
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 29
- 150000001875 compounds Chemical class 0.000 claims abstract description 28
- 239000004065 semiconductor Substances 0.000 claims abstract description 28
- 229910001868 water Inorganic materials 0.000 claims abstract description 27
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 25
- QUCDWLYKDRVKMI-UHFFFAOYSA-M sodium;3,4-dimethylbenzenesulfonate Chemical compound [Na+].CC1=CC=C(S([O-])(=O)=O)C=C1C QUCDWLYKDRVKMI-UHFFFAOYSA-M 0.000 claims abstract description 25
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 24
- 239000007800 oxidant agent Substances 0.000 claims abstract description 24
- 239000011574 phosphorus Substances 0.000 claims abstract description 24
- 239000002253 acid Substances 0.000 claims abstract description 23
- 239000003752 hydrotrope Substances 0.000 claims abstract description 20
- 239000004094 surface-active agent Substances 0.000 claims abstract description 17
- 239000006061 abrasive grain Substances 0.000 claims abstract description 15
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 15
- 239000008139 complexing agent Substances 0.000 claims abstract description 15
- 229920003169 water-soluble polymer Polymers 0.000 claims abstract description 14
- 239000003960 organic solvent Substances 0.000 claims abstract description 9
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 8
- 239000001257 hydrogen Substances 0.000 claims abstract description 8
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims abstract description 8
- -1 and in some cases Substances 0.000 claims abstract description 7
- 239000000758 substrate Substances 0.000 claims description 38
- 239000010949 copper Substances 0.000 claims description 35
- 238000000034 method Methods 0.000 claims description 31
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 30
- 229910052802 copper Inorganic materials 0.000 claims description 30
- 235000012431 wafers Nutrition 0.000 claims description 27
- WMFOQBRAJBCJND-UHFFFAOYSA-M Lithium hydroxide Chemical compound [Li+].[OH-] WMFOQBRAJBCJND-UHFFFAOYSA-M 0.000 claims description 24
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 18
- 239000012964 benzotriazole Substances 0.000 claims description 18
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 claims description 17
- LWIHDJKSTIGBAC-UHFFFAOYSA-K tripotassium phosphate Chemical compound [K+].[K+].[K+].[O-]P([O-])([O-])=O LWIHDJKSTIGBAC-UHFFFAOYSA-K 0.000 claims description 16
- 229920000642 polymer Polymers 0.000 claims description 15
- 150000001720 carbohydrates Chemical class 0.000 claims description 12
- 229910052783 alkali metal Inorganic materials 0.000 claims description 11
- 150000001340 alkali metals Chemical class 0.000 claims description 11
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims description 10
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 claims description 9
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 claims description 9
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 9
- 239000000347 magnesium hydroxide Substances 0.000 claims description 9
- 229910001862 magnesium hydroxide Inorganic materials 0.000 claims description 9
- 239000001913 cellulose Substances 0.000 claims description 8
- 229920002678 cellulose Polymers 0.000 claims description 8
- ZPWVASYFFYYZEW-UHFFFAOYSA-L dipotassium hydrogen phosphate Chemical compound [K+].[K+].OP([O-])([O-])=O ZPWVASYFFYYZEW-UHFFFAOYSA-L 0.000 claims description 8
- VTHJTEIRLNZDEV-UHFFFAOYSA-L magnesium dihydroxide Chemical compound [OH-].[OH-].[Mg+2] VTHJTEIRLNZDEV-UHFFFAOYSA-L 0.000 claims description 8
- BJEPYKJPYRNKOW-REOHCLBHSA-N (S)-malic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O BJEPYKJPYRNKOW-REOHCLBHSA-N 0.000 claims description 7
- 125000000217 alkyl group Chemical group 0.000 claims description 7
- BJEPYKJPYRNKOW-UHFFFAOYSA-N alpha-hydroxysuccinic acid Natural products OC(=O)C(O)CC(O)=O BJEPYKJPYRNKOW-UHFFFAOYSA-N 0.000 claims description 7
- 239000012141 concentrate Substances 0.000 claims description 7
- NBZBKCUXIYYUSX-UHFFFAOYSA-N iminodiacetic acid Chemical compound OC(=O)CNCC(O)=O NBZBKCUXIYYUSX-UHFFFAOYSA-N 0.000 claims description 7
- 239000001630 malic acid Substances 0.000 claims description 7
- 235000011090 malic acid Nutrition 0.000 claims description 7
- 229910000402 monopotassium phosphate Inorganic materials 0.000 claims description 7
- 235000019796 monopotassium phosphate Nutrition 0.000 claims description 7
- PJNZPQUBCPKICU-UHFFFAOYSA-N phosphoric acid;potassium Chemical compound [K].OP(O)(O)=O PJNZPQUBCPKICU-UHFFFAOYSA-N 0.000 claims description 7
- 229910000404 tripotassium phosphate Inorganic materials 0.000 claims description 7
- 235000019798 tripotassium phosphate Nutrition 0.000 claims description 7
- 238000007865 diluting Methods 0.000 claims description 6
- 229940048842 sodium xylenesulfonate Drugs 0.000 claims description 6
- HRQDCDQDOPSGBR-UHFFFAOYSA-M sodium;octane-1-sulfonate Chemical compound [Na+].CCCCCCCCS([O-])(=O)=O HRQDCDQDOPSGBR-UHFFFAOYSA-M 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 229920003145 methacrylic acid copolymer Polymers 0.000 claims description 5
- KVCGISUBCHHTDD-UHFFFAOYSA-M sodium;4-methylbenzenesulfonate Chemical compound [Na+].CC1=CC=C(S([O-])(=O)=O)C=C1 KVCGISUBCHHTDD-UHFFFAOYSA-M 0.000 claims description 5
- 239000000654 additive Substances 0.000 claims description 4
- 229920002635 polyurethane Polymers 0.000 claims description 4
- 239000004814 polyurethane Substances 0.000 claims description 4
- 230000000996 additive effect Effects 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 230000001590 oxidative effect Effects 0.000 claims description 3
- 229920002134 Carboxymethyl cellulose Polymers 0.000 claims description 2
- 239000003082 abrasive agent Substances 0.000 claims description 2
- 239000001768 carboxy methyl cellulose Substances 0.000 claims description 2
- 235000010948 carboxy methyl cellulose Nutrition 0.000 claims description 2
- 239000008112 carboxymethyl-cellulose Substances 0.000 claims description 2
- 238000010790 dilution Methods 0.000 claims description 2
- 239000012895 dilution Substances 0.000 claims description 2
- 238000013329 compounding Methods 0.000 claims 1
- 239000010419 fine particle Substances 0.000 claims 1
- 238000009472 formulation Methods 0.000 description 17
- 239000000243 solution Substances 0.000 description 14
- 239000002245 particle Substances 0.000 description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- 150000002148 esters Chemical class 0.000 description 9
- 150000003839 salts Chemical class 0.000 description 9
- 229920000388 Polyphosphate Polymers 0.000 description 8
- 229920001577 copolymer Polymers 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- 239000001205 polyphosphate Substances 0.000 description 8
- 235000011176 polyphosphates Nutrition 0.000 description 8
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 6
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 6
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 6
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 6
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 6
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 5
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 5
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical group OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 5
- 230000004888 barrier function Effects 0.000 description 5
- 229940077388 benzenesulfonate Drugs 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- 229910001431 copper ion Inorganic materials 0.000 description 5
- 239000011810 insulating material Substances 0.000 description 5
- 238000009413 insulation Methods 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 5
- 239000002002 slurry Substances 0.000 description 5
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 description 5
- YZEZMSPGIPTEBA-UHFFFAOYSA-N 2-n-(4,6-diamino-1,3,5-triazin-2-yl)-1,3,5-triazine-2,4,6-triamine Chemical compound NC1=NC(N)=NC(NC=2N=C(N)N=C(N)N=2)=N1 YZEZMSPGIPTEBA-UHFFFAOYSA-N 0.000 description 4
- AEMRFAOFKBGASW-UHFFFAOYSA-N Glycolic acid Chemical compound OCC(O)=O AEMRFAOFKBGASW-UHFFFAOYSA-N 0.000 description 4
- 229910019142 PO4 Inorganic materials 0.000 description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
- 229920002125 Sokalan® Polymers 0.000 description 4
- 150000007513 acids Chemical class 0.000 description 4
- 239000002585 base Substances 0.000 description 4
- SRSXLGNVWSONIS-UHFFFAOYSA-M benzenesulfonate Chemical group [O-]S(=O)(=O)C1=CC=CC=C1 SRSXLGNVWSONIS-UHFFFAOYSA-M 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 4
- 235000011180 diphosphates Nutrition 0.000 description 4
- 230000003628 erosive effect Effects 0.000 description 4
- 230000002209 hydrophobic effect Effects 0.000 description 4
- 229910052809 inorganic oxide Inorganic materials 0.000 description 4
- 150000002576 ketones Chemical class 0.000 description 4
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 description 4
- YSRVJVDFHZYRPA-UHFFFAOYSA-N melem Chemical compound NC1=NC(N23)=NC(N)=NC2=NC(N)=NC3=N1 YSRVJVDFHZYRPA-UHFFFAOYSA-N 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 4
- 235000021317 phosphate Nutrition 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 229910052708 sodium Inorganic materials 0.000 description 4
- 239000011734 sodium Substances 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- LBLYYCQCTBFVLH-UHFFFAOYSA-M 2-methylbenzenesulfonate Chemical compound CC1=CC=CC=C1S([O-])(=O)=O LBLYYCQCTBFVLH-UHFFFAOYSA-M 0.000 description 3
- JBVOQKNLGSOPNZ-UHFFFAOYSA-N 2-propan-2-ylbenzenesulfonic acid Chemical compound CC(C)C1=CC=CC=C1S(O)(=O)=O JBVOQKNLGSOPNZ-UHFFFAOYSA-N 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 229910000881 Cu alloy Inorganic materials 0.000 description 3
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 3
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 3
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- LFVGISIMTYGQHF-UHFFFAOYSA-N ammonium dihydrogen phosphate Chemical compound [NH4+].OP(O)([O-])=O LFVGISIMTYGQHF-UHFFFAOYSA-N 0.000 description 3
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- 230000015572 biosynthetic process Effects 0.000 description 3
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- 238000002474 experimental method Methods 0.000 description 3
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- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 3
- 229910001853 inorganic hydroxide Inorganic materials 0.000 description 3
- 229910052744 lithium Inorganic materials 0.000 description 3
- 239000011572 manganese Substances 0.000 description 3
- 235000019837 monoammonium phosphate Nutrition 0.000 description 3
- 239000000178 monomer Substances 0.000 description 3
- HFPZCAJZSCWRBC-UHFFFAOYSA-N p-cymene Chemical compound CC(C)C1=CC=C(C)C=C1 HFPZCAJZSCWRBC-UHFFFAOYSA-N 0.000 description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 3
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- NNRAOBUKHNZQFX-UHFFFAOYSA-N 2H-benzotriazole-4-thiol Chemical compound SC1=CC=CC2=C1NN=N2 NNRAOBUKHNZQFX-UHFFFAOYSA-N 0.000 description 2
- WHBMMWSBFZVSSR-UHFFFAOYSA-N 3-hydroxybutyric acid Chemical compound CC(O)CC(O)=O WHBMMWSBFZVSSR-UHFFFAOYSA-N 0.000 description 2
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- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 2
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- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 2
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- 229910000148 ammonium phosphate Inorganic materials 0.000 description 2
- ZRIUUUJAJJNDSS-UHFFFAOYSA-N ammonium phosphates Chemical compound [NH4+].[NH4+].[NH4+].[O-]P([O-])([O-])=O ZRIUUUJAJJNDSS-UHFFFAOYSA-N 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
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- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 description 2
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- MNNHAPBLZZVQHP-UHFFFAOYSA-N diammonium hydrogen phosphate Chemical compound [NH4+].[NH4+].OP([O-])([O-])=O MNNHAPBLZZVQHP-UHFFFAOYSA-N 0.000 description 2
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- 239000010432 diamond Substances 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- DNUFCIOKWJELSH-UHFFFAOYSA-O diazanium dioxido(oxo)phosphanium Chemical compound [NH4+].[NH4+].[O-][P+]([O-])=O DNUFCIOKWJELSH-UHFFFAOYSA-O 0.000 description 2
- XBDQKXXYIPTUBI-UHFFFAOYSA-N dimethylselenoniopropionate Natural products CCC(O)=O XBDQKXXYIPTUBI-UHFFFAOYSA-N 0.000 description 2
- XPPKVPWEQAFLFU-UHFFFAOYSA-N diphosphoric acid Chemical compound OP(O)(=O)OP(O)(O)=O XPPKVPWEQAFLFU-UHFFFAOYSA-N 0.000 description 2
- XYIBRDXRRQCHLP-UHFFFAOYSA-N ethyl acetoacetate Chemical compound CCOC(=O)CC(C)=O XYIBRDXRRQCHLP-UHFFFAOYSA-N 0.000 description 2
- 125000001153 fluoro group Chemical group F* 0.000 description 2
- LNTHITQWFMADLM-UHFFFAOYSA-N gallic acid Chemical compound OC(=O)C1=CC(O)=C(O)C(O)=C1 LNTHITQWFMADLM-UHFFFAOYSA-N 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 description 2
- WQYVRQLZKVEZGA-UHFFFAOYSA-N hypochlorite Chemical compound Cl[O-] WQYVRQLZKVEZGA-UHFFFAOYSA-N 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000004615 ingredient Substances 0.000 description 2
- 229910052741 iridium Inorganic materials 0.000 description 2
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 2
- QQVIHTHCMHWDBS-UHFFFAOYSA-N isophthalic acid Chemical compound OC(=O)C1=CC=CC(C(O)=O)=C1 QQVIHTHCMHWDBS-UHFFFAOYSA-N 0.000 description 2
- 239000004310 lactic acid Substances 0.000 description 2
- 235000014655 lactic acid Nutrition 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
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- 239000011029 spinel Substances 0.000 description 1
- WSANLGASBHUYGD-UHFFFAOYSA-N sulfidophosphanium Chemical class S=[PH3] WSANLGASBHUYGD-UHFFFAOYSA-N 0.000 description 1
- LRBQNJMCXXYXIU-NRMVVENXSA-N tannic acid Chemical compound OC1=C(O)C(O)=CC(C(=O)OC=2C(=C(O)C=C(C=2)C(=O)OC[C@@H]2[C@H]([C@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)[C@@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)[C@@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)O2)OC(=O)C=2C=C(OC(=O)C=3C=C(O)C(O)=C(O)C=3)C(O)=C(O)C=2)O)=C1 LRBQNJMCXXYXIU-NRMVVENXSA-N 0.000 description 1
- 235000015523 tannic acid Nutrition 0.000 description 1
- 229940033123 tannic acid Drugs 0.000 description 1
- 229920002258 tannic acid Polymers 0.000 description 1
- 229910003468 tantalcarbide Inorganic materials 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 239000011975 tartaric acid Substances 0.000 description 1
- 235000002906 tartaric acid Nutrition 0.000 description 1
- VKFFEYLSKIYTSJ-UHFFFAOYSA-N tetraazanium;phosphonato phosphate Chemical compound [NH4+].[NH4+].[NH4+].[NH4+].[O-]P([O-])(=O)OP([O-])([O-])=O VKFFEYLSKIYTSJ-UHFFFAOYSA-N 0.000 description 1
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 description 1
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- LRXTYHSAJDENHV-UHFFFAOYSA-H zinc phosphate Chemical compound [Zn+2].[Zn+2].[Zn+2].[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O LRXTYHSAJDENHV-UHFFFAOYSA-H 0.000 description 1
- 229910000165 zinc phosphate Inorganic materials 0.000 description 1
- OMSYGYSPFZQFFP-UHFFFAOYSA-J zinc pyrophosphate Chemical compound [Zn+2].[Zn+2].[O-]P([O-])(=O)OP([O-])([O-])=O OMSYGYSPFZQFFP-UHFFFAOYSA-J 0.000 description 1
- CZPRKINNVBONSF-UHFFFAOYSA-M zinc;dioxido(oxo)phosphanium Chemical compound [Zn+2].[O-][P+]([O-])=O CZPRKINNVBONSF-UHFFFAOYSA-M 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/06—Other polishing compositions
- C09G1/14—Other polishing compositions based on non-waxy substances
- C09G1/16—Other polishing compositions based on non-waxy substances on natural or synthetic resins
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- Condensed Matter Physics & Semiconductors (AREA)
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- Organic Chemistry (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Materials Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
【解決手段】配線金属を含有する半導体ウェーハのケミカルメカニカルポリッシングに有用なケミカルメカニカル研磨組成物であって、初期成分として、水、アゾールインヒビター、アルカリ金属有機界面活性剤、ハイドロトロープ、リン含有剤、場合によっては、非糖類水溶性ポリマー、場合によっては、式I(式中、Rは、水素及びC1-5アルキル基から選択され、xは1又は2である)の水溶性酸化合物、場合によっては、錯化剤、場合によっては、酸化剤、場合によっては、有機溶媒、及び場合によっては、砥粒を含む。
【選択図】なし
Description
(式中、Rは、水素及びC1-5アルキル基から選択され、xは1又は2である)
の水溶性酸化合物、場合によっては、錯化剤、場合によっては、酸化剤、場合によっては、有機溶媒、及び場合によっては、砥粒を含む(本質的にそれらからなる)ケミカルメカニカル研磨組成物を提供する。
(式中、Rは、水素及びC1-5アルキル基から選択され、xは1又は2である)
の任意の水溶性酸化合物を提供すること、場合によっては任意の錯化剤を提供すること、場合によっては任意の酸化剤を提供すること、場合によっては任意の有機溶媒を提供すること、場合によっては任意の砥粒を提供すること、水、アルカリ金属有機界面活性剤、ハイドロトロープ、場合によって提供される任意の非糖類水溶性ポリマー、場合によって提供される式Iの任意の水溶性酸化合物、場合によって提供される任意の錯化剤、場合によって提供される任意の酸化剤、場合によって提供される任意の有機溶媒、及び場合によって提供される任意の砥粒を合わせて混合物を形成すること、及びアゾールインヒビター及びリン含有剤を混合物に加えてケミカルメカニカル研磨組成物を形成することを含む方法を提供する。
本発明のケミカルメカニカル研磨組成物は、その使用時点濃度の4倍以上、好ましくは8倍以上まで濃縮されたときでも安定である。この特徴がケミカルメカニカル研磨組成物に有意な価値を与える。これは、関連するプロセス流の減少(すなわち水量の減少)を考慮すると、より小さな製造フットプリント(footprint)を可能にする。また、より低廉な輸送及び貯蔵コストを可能にする。最後に、エンドユーザがケミカルメカニカルポリッシングを自ら特有の作業に適合するように使用の時点でカスタマイズするための向上した融通性を提供する。
(式中、Rは、水素及びC1-5アルキル基から選択され、xは1又は2である)
の水溶性酸化合物を含有する。好ましくは、ケミカルメカニカル研磨組成物は、式Iの水溶性酸化合物を0〜10重量%、好ましくは0.05〜5重量%、より好ましくは0.4〜2重量%含有する。好ましくは、式Iの水溶性酸化合物は、イミノ二酢酸(IDA)、エチレンジアミン四酢酸(EDTA)及びこれらの組み合わせから選択される。もっとも好ましくは、式Iの水溶性酸化合物はIDAである。
ケミカルメカニカル研磨組成物調製
表1に示す量の成分を合わせることにより、比較研磨例PA及び研磨実施例P1〜P7ならびに比較安定性例SA及び安定性実施例S1〜S7において使用したケミカルメカニカル研磨組成物(すなわち、それぞれケミカルメカニカル研磨組成物A及び1〜7)を調製した(比較研磨例A及び研磨実施例S1〜S7に関しては、さらにH2O2を9重量%の濃度まで加えた)。
銅ブランケットウェーハに対し、各場合、表2に記す配合を使用して研磨実験を実施した(研磨の前に濃縮調合物を1×使用時点濃度まで希釈した)。ISRM検出システムを備えたApplied Materials社のReflexion200mm研磨機を、Rohm and Haas Electronic Materials CMP社から市販されているK7溝パターンを有するVisionPad(商標)5000ポリウレタン研磨パッドとともに、2.0psi(13.8kPa)のダウンフォース、200ml/minの研磨溶液流量、61rpmのプラテン速度、及び57rpmのキャリヤ速度で、研磨パッドの中心から3.5インチ(8.89cm)の研磨溶液滴下点の条件で使用した。Diagrid(登録商標)AD3BG-150855ダイアモンドパッドコンディショナ(Kinik社から市販)を使用して研磨パッドをコンディショニングした。研磨の前に、コンディショナを用いて、9.0psi(62.1kPa)のダウンフォースで20分間、次いで7.0psi(48.3kPa)のダウンフォースで20分間、研磨パッドをならした。ウェーハとウェーハとの合間にも、7.0psi(48.3kPa)のダウンフォースを使用して研磨パッドをさらにコンディショニングした。Jordan ValleyのJVX-5200T計測ツールを使用して銅除去速度を測定した。各研磨実験を二重反復で実施した。二つの結果の平均を表2に示す。
表3に記す研磨組成物の安定性を、記載の試料を記載の温度で5日間貯蔵し、エージングさせた材料の明澄さを観察することによって評価した。不安定な調合物は、記載の条件下に貯蔵されると、曇りを生じるか、析出物を形成することが認められる。
Claims (11)
- アンモニウムを0.001重量%未満含有し、水溶性セルロースを0.001重量%未満含有する、請求項1記載のケミカルメカニカル研磨組成物。
- アンモニウムを0.001重量%未満含有し、水溶性セルロースを0.001重量%未満含有する、請求項3記載のケミカルメカニカル研磨組成物。
- 初期成分として、
水、
ベンゾトリアゾール0.1〜5重量%、
オクタンスルホン酸ナトリウム0.05〜1重量%、
トルエンスルホン酸ナトリウム、キシレンスルホン酸ナトリウム及びそれらの混合物から選択されるハイドロトロープ0.1〜1重量%、
リン酸三カリウム、リン酸水素二カリウム、リン酸二水素カリウム及びそれらの混合物から選択されるリン含有剤0.1〜5重量%、
メタクリル酸とアクリル酸とのコポリマー0.05〜3重量%、
イミノ二酢酸0.05〜5重量%、
リンゴ酸0.1〜5重量%、及び
酸化剤0〜25重量%
を含む、請求項1記載のケミカルメカニカル研磨組成物。 - アンモニウムを0.001重量%未満しか含有しない、請求項5記載のケミカルメカニカル研磨組成物。
- 請求項1記載のケミカルメカニカル研磨組成物を製造する方法であって、
水を提供すること、
アゾールインヒビターを提供すること、
アルカリ金属有機界面活性剤を提供すること、
ハイドロトロープを提供すること、
リン含有剤を提供すること、
場合によっては任意の非糖類水溶性ポリマーを提供すること、
場合によっては式I
(式中、Rは、水素及びC1-5アルキル基から選択され、xは1又は2である)
の任意の水溶性酸化合物を提供すること、
場合によっては任意の錯化剤を提供すること、
場合によっては任意の酸化剤を提供すること、
場合によっては任意の有機溶媒を提供すること、
場合によっては任意の砥粒を提供すること、
前記水、前記アルカリ金属有機界面活性剤、前記ハイドロトロープ、場合によって提供される任意の非糖類水溶性ポリマー、場合によって提供される式Iの任意の水溶性酸化合物、場合によって提供される任意の錯化剤、場合によって提供される任意の酸化剤、場合によって提供される任意の有機溶媒、及び場合によって提供される任意の砥粒を合わせて混合物を形成すること、及び
前記アゾールインヒビター及び前記リン含有剤を前記混合物に加えてケミカルメカニカル研磨組成物を形成すること
を含む方法。 - 基材のケミカルメカニカルポリッシングの方法であって、
銅配線を有する半導体ウェーハである基材を提供すること、
請求項1記載のケミカルメカニカル研磨組成物を提供すること、
場合によっては酸化剤を前記ケミカルメカニカル研磨組成物に加えること、
ケミカルメカニカル研磨パッドを提供すること、
前記ケミカルメカニカル研磨パッドと前記基材との間の界面に0.69〜34.5kPaのダウンフォースで動的接触を生じさせること、及び
前記ケミカルメカニカル研磨パッドと前記基材との間の前記界面又はその近くの前記ケミカルメカニカル研磨パッド上に前記ケミカルメカニカル研磨組成物を注入すること
を含み、前記ケミカルメカニカル研磨組成物が、リン酸、水酸化マグネシウム及び水酸化リチウムの少なくとも一つの添加によって2〜6に調節されたpHを示す方法。 - 提供される前記ケミカルメカニカル研磨組成物が濃縮形態であり、前記方法が、前記ケミカルメカニカル研磨組成物を水で希釈することをさらに含む、請求項8記載の方法。
- 前記ケミカルメカニカル研磨組成物が4倍濃縮物として提供され、前記方法が、
前記ケミカルメカニカル研磨組成物を、希釈後の初期成分の配合量が、
ベンゾトリアゾール0.2〜0.4重量%、
オクタンスルホン酸ナトリウム0.05〜1重量%、
トルエンスルホン酸ナトリウム、キシレンスルホン酸ナトリウム及びそれらの混合物から選択されるハイドロトロープ0.45〜1重量%、
リン酸三カリウム、リン酸水素二カリウム、リン酸二水素カリウム及びそれらの混合物から選択されるリン含有剤0.5〜2重量%、
カルボキシメチルセルロース0.1〜1重量%、
メタクリル酸とアクリル酸とのコポリマー0.05〜1重量%、
イミノ二酢酸0.4〜2重量%、及び
リンゴ酸0.1〜0.5重量%
になるように水で希釈すること、及び
酸化剤を前記ケミカルメカニカル研磨組成物に加えること
をさらに含む、請求項8記載の方法。 - 前記ケミカルメカニカル研磨パッドが、ポリマー中空コア微粒子を含有するポリウレタン研磨層及び塗膜サブパッドを含む場合、前記ケミカルメカニカル研磨組成物が、200mm研磨機上、毎分61回転のプラテン速度、毎分57回転のキャリヤ速度、200ml/minのケミカルメカニカル研磨組成物流量及び13.8kPaの公称ダウンフォースで少なくとも4,000Å/minの銅除去速度を示す、請求項9記載の方法。
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- 2012-03-02 KR KR1020120021967A patent/KR101829639B1/ko active IP Right Grant
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JP2014095072A (ja) * | 2012-10-09 | 2014-05-22 | Rohm & Haas Electronic Materials Cmp Holdings Inc | ケミカルメカニカルポリッシング組成物及び方法 |
JP2018164075A (ja) * | 2017-01-31 | 2018-10-18 | ローム アンド ハース エレクトロニック マテリアルズ シーエムピー ホウルディングス インコーポレイテッド | タングステンのための化学機械研磨法 |
JP7144146B2 (ja) | 2017-01-31 | 2022-09-29 | ローム アンド ハース エレクトロニック マテリアルズ シーエムピー ホウルディングス インコーポレイテッド | タングステンのための化学機械研磨法 |
WO2018168206A1 (ja) * | 2017-03-14 | 2018-09-20 | 株式会社フジミインコーポレーテッド | 研磨用組成物、その製造方法ならびにこれを用いた研磨方法および基板の製造方法 |
JPWO2018168206A1 (ja) * | 2017-03-14 | 2020-01-16 | 株式会社フジミインコーポレーテッド | 研磨用組成物、その製造方法ならびにこれを用いた研磨方法および基板の製造方法 |
JP7209620B2 (ja) | 2017-03-14 | 2023-01-20 | 株式会社フジミインコーポレーテッド | 研磨用組成物、その製造方法ならびにこれを用いた研磨方法および基板の製造方法 |
US11643573B2 (en) | 2017-03-14 | 2023-05-09 | Fujimi Incorporated | Polishing composition, production method therefor, and polishing method and production method for substrate, using polishing composition |
Also Published As
Publication number | Publication date |
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US20120225556A1 (en) | 2012-09-06 |
FR2972195B1 (fr) | 2015-08-28 |
DE102012004219A1 (de) | 2012-09-06 |
FR2972195A1 (fr) | 2012-09-07 |
KR20120100820A (ko) | 2012-09-12 |
JP6118501B2 (ja) | 2017-04-19 |
TW201302997A (zh) | 2013-01-16 |
US8440097B2 (en) | 2013-05-14 |
TWI602909B (zh) | 2017-10-21 |
KR101829639B1 (ko) | 2018-03-29 |
CN102690609B (zh) | 2014-11-26 |
CN102690609A (zh) | 2012-09-26 |
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