JP6039920B2 - シリケート蛍光体、シリケート蛍光体の製造方法、及びシリケート蛍光体を含む発光装置 - Google Patents
シリケート蛍光体、シリケート蛍光体の製造方法、及びシリケート蛍光体を含む発光装置 Download PDFInfo
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- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 title claims description 120
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 title claims description 75
- 238000004519 manufacturing process Methods 0.000 title claims description 19
- 239000000203 mixture Substances 0.000 claims description 38
- 239000002994 raw material Substances 0.000 claims description 31
- 150000001875 compounds Chemical class 0.000 claims description 29
- 239000000126 substance Substances 0.000 claims description 28
- 229910004283 SiO 4 Inorganic materials 0.000 claims description 17
- 238000010304 firing Methods 0.000 claims description 16
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 14
- 239000013078 crystal Substances 0.000 claims description 14
- 229910052712 strontium Inorganic materials 0.000 claims description 14
- 229910052782 aluminium Inorganic materials 0.000 claims description 13
- 229910052785 arsenic Inorganic materials 0.000 claims description 13
- 229910052788 barium Inorganic materials 0.000 claims description 13
- 229910052733 gallium Inorganic materials 0.000 claims description 13
- 229910052732 germanium Inorganic materials 0.000 claims description 13
- 229910052742 iron Inorganic materials 0.000 claims description 13
- 229910052749 magnesium Inorganic materials 0.000 claims description 13
- 229910052698 phosphorus Inorganic materials 0.000 claims description 13
- 229910052725 zinc Inorganic materials 0.000 claims description 13
- 229910052757 nitrogen Inorganic materials 0.000 claims description 9
- 229910016036 BaF 2 Inorganic materials 0.000 claims description 7
- 229910052775 Thulium Inorganic materials 0.000 claims description 7
- 229910004261 CaF 2 Inorganic materials 0.000 claims description 6
- 239000012298 atmosphere Substances 0.000 claims description 6
- 239000000843 powder Substances 0.000 claims description 6
- -1 CaCl 2 Inorganic materials 0.000 claims description 5
- 101100496858 Mus musculus Colec12 gene Proteins 0.000 claims description 3
- 229910017855 NH 4 F Inorganic materials 0.000 claims description 3
- 229910052684 Cerium Inorganic materials 0.000 claims description 2
- 239000000155 melt Substances 0.000 claims description 2
- 239000003795 chemical substances by application Substances 0.000 claims 1
- 239000000758 substrate Substances 0.000 description 20
- 239000012190 activator Substances 0.000 description 17
- 230000005284 excitation Effects 0.000 description 14
- 238000000295 emission spectrum Methods 0.000 description 13
- 229910052708 sodium Inorganic materials 0.000 description 10
- 238000001816 cooling Methods 0.000 description 9
- 238000000034 method Methods 0.000 description 9
- 239000002245 particle Substances 0.000 description 8
- 230000004907 flux Effects 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 238000007789 sealing Methods 0.000 description 7
- 230000008859 change Effects 0.000 description 5
- 230000007423 decrease Effects 0.000 description 5
- 239000011159 matrix material Substances 0.000 description 5
- 238000002156 mixing Methods 0.000 description 5
- 238000000498 ball milling Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000003822 epoxy resin Substances 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 229920000647 polyepoxide Polymers 0.000 description 4
- 238000003786 synthesis reaction Methods 0.000 description 4
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 3
- 229910052771 Terbium Inorganic materials 0.000 description 3
- 238000002835 absorbance Methods 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000010791 quenching Methods 0.000 description 3
- 230000000171 quenching effect Effects 0.000 description 3
- 229910002601 GaN Inorganic materials 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 229910052769 Ytterbium Inorganic materials 0.000 description 2
- 238000000862 absorption spectrum Methods 0.000 description 2
- 239000013543 active substance Substances 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000001354 calcination Methods 0.000 description 2
- 229910052791 calcium Inorganic materials 0.000 description 2
- 150000001768 cations Chemical class 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 229910052693 Europium Inorganic materials 0.000 description 1
- 101100513612 Microdochium nivale MnCO gene Proteins 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 150000001450 anions Chemical class 0.000 description 1
- 229910001422 barium ion Inorganic materials 0.000 description 1
- 239000010953 base metal Substances 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000005090 crystal field Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000002223 garnet Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
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- 229910003465 moissanite Inorganic materials 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 150000004760 silicates Chemical class 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
- 239000011029 spinel Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 230000001502 supplementing effect Effects 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7715—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing cerium
- C09K11/77212—Silicates
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
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- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/59—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing silicon
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- C—CHEMISTRY; METALLURGY
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- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/70—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing phosphorus
- C09K11/71—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing phosphorus also containing alkaline earth metals
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B20/00—Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps
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- Inorganic Chemistry (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Luminescent Compositions (AREA)
- Led Device Packages (AREA)
Description
(化1)
Ca2−x−y−zMxSiO4:yCe3+,zN(0≦x<0.5、0<y≦0.1、0≦z<0.15)・・・(1)
(MはMg、Sr、Ba、Zn、Na、Al、Ga、Ge、P、As及びFeからなるグループから選択された少なくとも1つを含み、NはEu2+、Mn2+、Tb3+、Yb2+及びTm3+からなるグループから選択された少なくとも1つを含む。)
(化2)
Ca2−x−y−zMxSiO4:yCe3+,zN(0≦x<0.5、0<y≦0.1、0≦z<0.15)・・・(1)
(MはMg、Sr、Ba、Zn、Na、Al、Ga、Ge、P、As及びFeからなるグループから選択された少なくとも1つを含み、NはEu2+、Mn2+、Tb3+、Yb2+及びTm3+からなるグループから選択された少なくとも1つを含む。)
(化3)
Ca2−x−y−zMxSiO4:yCe3+,zN(0≦x<0.5、0<y≦0.1、0≦z<0.15)・・・(1)
(MはMg、Sr、Ba、Zn、Na、Al、Ga、Ge、P、As及びFeからなるグループから選択された少なくとも1つを含み、NはEu2+、Mn2+、Tb3+、Yb2+及びTm3+からなるグループから選択された少なくとも1つを含む。)
本発明の一実施形態に係るシリケート蛍光体は、下記の化学式(1)で示し、Pbnm62空間構造群で斜方晶系(orthorhombic)のγ(ガンマ)相を有する。
Ca2−x−y−zMxSiO4:yCe3+,zN(0≦x<0.5、0<y≦0.1、0≦z<0.15)…(1)
化学式(1)において、MはMg、Sr、Ba、Zn、Na、Al、Ga、Ge、P、As及びFeからなるグループから選択された少なくとも1つを含み、NはEu2+、Mn2+、Tb3+、Yb2+及びTm3+からなるグループから選択された少なくとも1つを含む。
図1は本発明の一実施形態に係るシリケート蛍光体の製造方法を示すフローチャートである。
(化5)
Ca2−x−y−zMxSiO4:yCe3+,zN(0≦x<0.5、0<y≦0.1、0≦z<0.15)…(1)
(MはMg、Sr、Ba、Zn、Na、Al、Ga、Ge、P、As及びFeからなるグループから選択された少なくとも1つを含み、NはEu2+、Mn2+、Tb3+、Yb2+及びTm3+からなるグループから選択された少なくとも1つを含む。)
図2は、本発明の一実施形態に係る発光装置を有する表示装置を示す断面図であり、図3は、図2の発光装置を示す拡大断面図である。
Ca2−x−y−zMxSiO4:yCe3+,zN(0≦x<0.5、0<y≦0.1、0≦z<0.15)…(1)
化学式(1)において、MはMg、Sr、Ba、Zn、Na、Al、Ga、Ge、P、As及びFeからなるグループから選択された少なくとも1つを含み、NはEu2+、Mn2+、Tb3+、Yb2+及びTm3+からなるグループから選択された少なくとも1つを含む。
110…発光装置
130…光源
140…密封部材
150…シリケート蛍光体
Claims (10)
- 下記の化学式(1)で示されるPbnm62空間構造群で斜方晶系のγ相を有することを特徴とするシリケート蛍光体。
(化1)
Ca2−x−y−zMxSiO4:yCe3+,zN(0≦x<0.5、0<y≦0.1、0≦z<0.15)…(1)
(MはMg、Sr、Ba、Zn、Al、Ga、Ge、P、As及びFeからなるグループから選択された少なくとも1つを含み、NはEu2+、Mn2+、Tb3+、Yb2+及びTm3+からなるグループから選択された少なくとも1つを含む) - SiO4の1モルに対してCaの含有量は1.5モル〜2モルであることを特徴とする請求項1に記載のシリケート蛍光体。
- 標準粉末回折図形(JCPDS)#76−0799、#77−0387、#86−0397、#87−1256、#87−1257または#83−2457と一致する結晶構造を有することを特徴とする請求項1に記載のシリケート蛍光体。
- SiO4の1モルに対してCe3+の含有量は0.01モル〜0.03モルであることを特徴とする請求項1に記載のシリケート蛍光体。
- Caを含む化合物、Siを含む化合物及びCeを含む化合物を含む原料混合物を準備し、
前記原料混合物を焼成し、
前記焼成された原料混合物を冷却して、下記の化学式(1)で示され、Pbnm62空間構造群で斜方晶系のγ相を有するシリケート蛍光体を収得することを特徴とするシリケート蛍光体の製造方法。
(化2)
Ca2−x−y−zMxSiO4:yCe3+,zN(0≦x<0.5、0<y≦0.1、0≦z<0.15)…(1)
(MはMg、Sr、Ba、Zn、Al、Ga、Ge、P、As及びFeからなるグループから選択された少なくとも1つを含み、NはEu2+、Mn2+、Tb3+、Yb2+及びTm3+からなるグループから選択された少なくとも1つを含む。) - 前記Caを含む化合物はCaO、CaCO3、Ca(NO3)2、CaF2及びCaCl2からなるグループから選択された少なくとも1つを含み、前記Siを含む化合物は、SiO2、SiO、及びSiからなるグループから選択された少なくとも1つを含み、前記Ceを含む化合物は、Ce2O3、CeO2、Ce2(SO4)3及びCe(SO4)2からなるグループから選択された少なくとも1つを含むことを特徴とする請求項5に記載のシリケート蛍光体の製造方法。
- 前記原料混合物は、MgF2、MgCl2、BaF2、BaCl2、SrF2、SrCl2、CaF2、CaCl2、NH4F、NH4Cl及びLiFからなるグループから選択された少なくとも1つを融剤としてさらに含むことを特徴とする請求項5に記載のシリケート蛍光体の製造方法。
- 前記原料混合物の焼成温度は、1350℃〜1550℃であることを特徴とする請求項5に記載のシリケート蛍光体の製造方法。
- 前記原料混合物の焼成を、H2を含む還元雰囲気下で行うことを特徴とする請求項8に記載のシリケート蛍光体の製造方法。
- 光を生成する光源と、
前記光によって励起されて前記光より長い波長を有する光を放出し、下記の化学式(1)で示され、Pbnm62空間構造群で斜方晶系のγ相を有するシリケート蛍光体と、を含むことを特徴とする発光装置。
(化3)
Ca2−x−y−zMxSiO4:yCe3+,zN(0≦x<0.5、0<y≦0.1、0≦z<0.15)…(1)
(Mは、Mg、Sr、Ba、Zn、Al、Ga、Ge、P、As及びFeからなるグループから選択された少なくとも1つを含み、NはEu2+、Mn2+、Tb3+、Yb2+及びTm3+からなるグループから選択された少なくとも1つを含む。)
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KR10-2011-0053918 | 2011-06-03 | ||
KR1020110053918A KR101812997B1 (ko) | 2011-06-03 | 2011-06-03 | 실리케이트 형광체, 실리케이트 형광체의 제조방법 및 이를 포함하는 발광 장치 |
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