JP6039848B1 - 発光ダイオード - Google Patents
発光ダイオード Download PDFInfo
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- JP6039848B1 JP6039848B1 JP2016097186A JP2016097186A JP6039848B1 JP 6039848 B1 JP6039848 B1 JP 6039848B1 JP 2016097186 A JP2016097186 A JP 2016097186A JP 2016097186 A JP2016097186 A JP 2016097186A JP 6039848 B1 JP6039848 B1 JP 6039848B1
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- 239000004065 semiconductor Substances 0.000 claims abstract description 78
- 229910052751 metal Inorganic materials 0.000 claims description 20
- 239000002184 metal Substances 0.000 claims description 20
- 230000007704 transition Effects 0.000 claims description 20
- 239000000758 substrate Substances 0.000 claims description 18
- 239000012535 impurity Substances 0.000 claims description 15
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 10
- 229910052709 silver Inorganic materials 0.000 claims description 10
- 239000004332 silver Substances 0.000 claims description 10
- 229910052594 sapphire Inorganic materials 0.000 claims description 9
- 239000010980 sapphire Substances 0.000 claims description 9
- 230000007423 decrease Effects 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 abstract description 18
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 18
- 238000000605 extraction Methods 0.000 abstract description 6
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 10
- 229910002601 GaN Inorganic materials 0.000 description 9
- 238000000034 method Methods 0.000 description 8
- 239000012071 phase Substances 0.000 description 8
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 230000008859 change Effects 0.000 description 4
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- -1 AlGaInN Inorganic materials 0.000 description 1
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
- H01L33/325—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen characterised by the doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/405—Reflective materials
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- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
Description
前記金属反射層は、銀(Ag)を含み得る。
前記第1導電型半導体層はn型半導体層であり、前記第2導電型半導体層はp型半導体層であり得る。
前記第1トランジション部及び前記第2トランジション部のそれぞれの開始点と終了点にデルタドーピングを適用し得る。
前記DBRユニット層の厚さは、60nm〜100nmであることが好ましい。
前記DBRユニット層において、前記低屈折率層及び前記高屈折率層のそれぞれの厚さは、30nm〜50nmであることが好ましい。
前記位相整合層は、AlxGa1−xN(0<x<1)を含み得る。
前記位相整合層の厚さは、5nm〜50nmであることが好ましい。
前記第1トランジション部及び前記第2トランジション部のそれぞれのAlの含量プロファイルは、線形又は二次曲線であり得る。
20 第1導電型半導体層
30 活性層
40 第2導電型半導体層
50 第2導電型反射層
50a、50b、50c、…、50z DBRユニット層
50a1 低屈折率層
50a2 高屈折率層
72 (反射部の)第2導電型中間層
74 (反射部の)金属反射層
80 第1電極
90 位相整合層
Claims (17)
- 前面及び背面を有する第1導電型半導体層と、
前面及び背面を有する第2導電型半導体層と、
前記第1導電型半導体層の背面と前記第2導電型半導体層の前面との間に形成された活性層と、
前記第2導電型半導体層の背面上に形成された第2導電型反射層と、
前記第2導電型半導体層とは反対側である前記第2導電型反射層の背面上に形成されて短波長(UVA波長)帯域及び青色波長帯域の光を反射し、前記第2導電型半導体層に電気的に連結された反射部と、を備え、
前記第2導電型反射層は、前記短波長(UVA波長)帯域である315nm〜420nm波長帯域の光を反射させるDBR(distributed Bragg reflector)ユニット層を含み、前記DBRユニット層は、低屈折率層と、前記低屈折率層に隣接する高屈折率層と、を含み、前記低屈折率層及び前記高屈折率層は、それぞれAlxGa1−xN(0<x≦1)及びAlyGa1−yN(0≦y<1、y<x)を含み、
前記第2導電型反射層において、前記DBRユニット層は3つ以上繰り返され、前記第2導電型半導体層の背面に最も近く位置する最初の3つのDBRユニット層の第2導電型不純物ドーピング濃度である第1ドーピング濃度は、残りのDBRユニット層のドーピング濃度である第2ドーピング濃度よりも低いことを特徴とする発光ダイオード。 - 前記第2導電型半導体層と前記第2導電型反射層との間に形成された位相整合層(phase−matching layer)をさらに含むことを特徴とする請求項1に記載の発光ダイオード。
- 前記第1ドーピング濃度は1×1016cm−3〜5×1017cm−3であり、前記第2ドーピング濃度は1×1018cm−3〜1×1021cm−3であることを特徴とする請求項1に記載の発光ダイオード。
- 前記DBRユニット層が複数のDBRユニット層からなる場合、前記反射部に最も近く位置するDBRユニット層の第2導電型不純物ドーピング濃度は、オーミックコンタクト(Ohmic contact)を向上させるために、残りのDBRユニット層に比べてより高いことを特徴とする請求項1に記載の発光ダイオード。
- 前記反射部は、
オーミックコンタクトを向上させるための第2導電型中間層と、
前記短波長(UVA波長)帯域及び青色波長帯域の光を反射させるための金属反射層と、を含むことを特徴とする請求項1に記載の発光ダイオード。 - 前記金属反射層は、銀(Ag)を含むことを特徴とする請求項5に記載の発光ダイオード。
- 前記第1導電型半導体層の前面上にサファイア基板が位置することを特徴とする請求項1に記載の発光ダイオード。
- 前記第1導電型半導体層はn型半導体層であり、前記第2導電型半導体層はp型半導体層であることを特徴とする請求項1に記載の発光ダイオード。
- 前記第2導電型反射層は、複数のDBRユニット層を含み、前記複数のDBRユニット層のうちの一つのDBRユニット層内で低屈折率層と高屈折率層との間にAlの含量が漸次減少する第1トランジション部を含み、前記一つのDBRユニット層の高屈折率層とその次のDBRユニット層の低屈折率層との間にAlの含量が漸次増加する第2トランジション部を含むことを特徴とする請求項1に記載の発光ダイオード。
- 前記第1トランジション部及び前記第2トランジション部のそれぞれの開始点と終了点にデルタドーピングが適用されていることを特徴とする請求項9に記載の発光ダイオード。
- 前記第2導電型反射層の厚さは、60nm〜1500nmであることを特徴とする請求項1に記載の発光ダイオード。
- 前記DBRユニット層の厚さは、60nm〜100nmであることを特徴とする請求項1に記載の発光ダイオード。
- 前記DBRユニット層において、前記低屈折率層及び前記高屈折率層のそれぞれの厚さは、30nm〜50nmであることを特徴とする請求項1に記載の発光ダイオード。
- 前記第2導電型中間層の厚さは、10nm〜150nmであることを特徴とする請求項5に記載の発光ダイオード。
- 前記位相整合層は、AlxGa1−xN(0<x<1)を含むことを特徴とする請求項2に記載の発光ダイオード。
- 前記位相整合層の厚さは、5nm〜50nmであることを特徴とする請求項2に記載の発光ダイオード。
- 前記第1トランジション部及び前記第2トランジション部のそれぞれのAlの含量プロファイルは、線形又は二次曲線であることを特徴とする請求項9に記載の発光ダイオード。
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US15/693,159 US9985176B2 (en) | 2016-03-17 | 2017-08-31 | Light emitting diode with reflective part for UVA and blue wavelengths |
US15/962,727 US10217899B2 (en) | 2016-03-17 | 2018-04-25 | Light emitting diode with reflective part for UVA and blue wavelengths |
US16/245,405 US10622512B2 (en) | 2016-03-17 | 2019-01-11 | Light emitting diode with reflective part for UVA and blue wavelengths |
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KR10-2016-0032026 | 2016-03-17 | ||
KR1020160032026A KR20170108321A (ko) | 2016-03-17 | 2016-03-17 | 발광 다이오드 |
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JP2017168797A JP2017168797A (ja) | 2017-09-21 |
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JP2016216305A Expired - Fee Related JP6320486B2 (ja) | 2016-03-17 | 2016-11-04 | 発光ダイオード |
JP2018071697A Expired - Fee Related JP6722221B2 (ja) | 2016-03-17 | 2018-04-03 | 発光ダイオード |
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2016
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Cited By (7)
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WO2018151157A1 (ja) * | 2017-02-17 | 2018-08-23 | Dowaエレクトロニクス株式会社 | 深紫外発光素子およびその製造方法 |
JPWO2018151157A1 (ja) * | 2017-02-17 | 2019-11-07 | Dowaエレクトロニクス株式会社 | 深紫外発光素子およびその製造方法 |
US11201261B2 (en) | 2017-02-17 | 2021-12-14 | Dowa Electronics Materials Co., Ltd. | Deep ultraviolet light emitting element and method of manufacturing the same |
JP2019121654A (ja) * | 2017-12-28 | 2019-07-22 | 日機装株式会社 | 窒化物半導体発光素子 |
US10892183B2 (en) | 2018-03-02 | 2021-01-12 | Micromaterials Llc | Methods for removing metal oxides |
KR101933121B1 (ko) * | 2018-09-21 | 2018-12-27 | 박민재 | 밀링 가공 장치 제작방법 |
KR101933120B1 (ko) * | 2018-09-21 | 2018-12-27 | 박민재 | 밀링 가공 장치 |
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JP2017168811A (ja) | 2017-09-21 |
US20170271555A1 (en) | 2017-09-21 |
JP2018113477A (ja) | 2018-07-19 |
US9985176B2 (en) | 2018-05-29 |
US20180240938A1 (en) | 2018-08-23 |
JP6320486B2 (ja) | 2018-05-09 |
US10622512B2 (en) | 2020-04-14 |
US9853187B2 (en) | 2017-12-26 |
JP6722221B2 (ja) | 2020-07-15 |
JP2017168797A (ja) | 2017-09-21 |
US20190148585A1 (en) | 2019-05-16 |
KR20170108321A (ko) | 2017-09-27 |
US10217899B2 (en) | 2019-02-26 |
US20180069152A1 (en) | 2018-03-08 |
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