JP6039757B2 - エッジに丸みを付けた電界効果トランジスタおよび製造方法 - Google Patents
エッジに丸みを付けた電界効果トランジスタおよび製造方法 Download PDFInfo
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- JP6039757B2 JP6039757B2 JP2015132867A JP2015132867A JP6039757B2 JP 6039757 B2 JP6039757 B2 JP 6039757B2 JP 2015132867 A JP2015132867 A JP 2015132867A JP 2015132867 A JP2015132867 A JP 2015132867A JP 6039757 B2 JP6039757 B2 JP 6039757B2
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- 238000004519 manufacturing process Methods 0.000 title description 13
- 230000005669 field effect Effects 0.000 title description 4
- 230000000903 blocking effect Effects 0.000 claims description 38
- 238000000034 method Methods 0.000 claims description 23
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 19
- 229910052710 silicon Inorganic materials 0.000 claims description 19
- 239000010703 silicon Substances 0.000 claims description 19
- 150000004767 nitrides Chemical class 0.000 claims description 17
- 230000003628 erosive effect Effects 0.000 claims description 16
- 230000001590 oxidative effect Effects 0.000 claims description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 5
- 238000005530 etching Methods 0.000 claims description 4
- 238000005121 nitriding Methods 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 238000002513 implantation Methods 0.000 claims description 2
- 238000000137 annealing Methods 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 13
- 239000000758 substrate Substances 0.000 description 10
- 230000003647 oxidation Effects 0.000 description 6
- 238000007254 oxidation reaction Methods 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 230000014509 gene expression Effects 0.000 description 2
- -1 oxynitride Chemical compound 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
- H01L29/4011—Multistep manufacturing processes for data storage electrodes
- H01L29/40117—Multistep manufacturing processes for data storage electrodes the electrodes comprising a charge-trapping insulator
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
- H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
- H01L21/28202—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation in a nitrogen-containing ambient, e.g. nitride deposition, growth, oxynitridation, NH3 nitridation, N2O oxidation, thermal nitridation, RTN, plasma nitridation, RPN
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/4234—Gate electrodes for transistors with charge trapping gate insulator
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/518—Insulating materials associated therewith the insulating material containing nitrogen, e.g. nitride, oxynitride, nitrogen-doped material
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- General Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Chemical & Material Sciences (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
- Electrodes Of Semiconductors (AREA)
- Formation Of Insulating Films (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Description
Claims (4)
- トンネル誘電体領域上に電荷トラップ領域を形成し、当該電荷トラップ領域上にブロッキング誘電体領域を形成することと、
前記ブロッキング誘電体領域の表面を窒化処理することと、
前記窒化処理されたブロッキング誘電体領域上にゲート領域を形成することと、
前記ゲート領域と前記電荷トラップ領域との側壁を酸化することと、を含み、
窒化物層またはシリコンリッチ窒化物層を堆積することと、
前記窒化物層または前記シリコンリッチ窒化物層上に酸化物層を形成することと、
前記酸化物層および前記窒化物層または前記シリコンリッチ窒化物層の一部をエッチバックすることと、
酸窒化物層またはシリコンリッチ酸窒化物層を形成するために、前記窒化物層または前記シリコンリッチ窒化物層の残りの部分を酸化することと、によって、前記トンネル誘電体領域上に前記電荷トラップ領域を形成し、当該電荷トラップ領域上に前記ブロッキング誘電体領域を形成する、
方法。 - 前記ブロッキング誘電体領域の前記表面を窒化処理することは、アニール炉において、前記ブロッキング誘電体領域の前記表面を窒素に曝すことを含む、請求項1に記載の方法。
- 前記ゲート領域のエッジ侵食は、前記ブロッキング誘電体領域の窒化処理によって抑制される、請求項1又は請求項2に記載の方法。
- 前記ゲート領域のエッジ侵食は、前記ゲート領域の前記側壁への酸化物注入によって抑制される、請求項1〜3のいずれか1項に記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/973,756 | 2010-12-20 | ||
US12/973,756 US9412598B2 (en) | 2010-12-20 | 2010-12-20 | Edge rounded field effect transistors and methods of manufacturing |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013544874A Division JP5774720B2 (ja) | 2010-12-20 | 2011-12-19 | エッジに丸みを付けた電界効果トランジスタおよび製造方法 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2015173298A JP2015173298A (ja) | 2015-10-01 |
JP2015173298A5 JP2015173298A5 (ja) | 2016-10-06 |
JP6039757B2 true JP6039757B2 (ja) | 2016-12-07 |
Family
ID=46233256
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JP2013544874A Active JP5774720B2 (ja) | 2010-12-20 | 2011-12-19 | エッジに丸みを付けた電界効果トランジスタおよび製造方法 |
JP2015132867A Active JP6039757B2 (ja) | 2010-12-20 | 2015-07-01 | エッジに丸みを付けた電界効果トランジスタおよび製造方法 |
Family Applications Before (1)
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JP2013544874A Active JP5774720B2 (ja) | 2010-12-20 | 2011-12-19 | エッジに丸みを付けた電界効果トランジスタおよび製造方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US9412598B2 (ja) |
EP (1) | EP2656381A4 (ja) |
JP (2) | JP5774720B2 (ja) |
KR (1) | KR101983682B1 (ja) |
CN (2) | CN103380488B (ja) |
WO (1) | WO2012087978A2 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9614105B2 (en) | 2013-04-22 | 2017-04-04 | Cypress Semiconductor Corporation | Charge-trap NOR with silicon-rich nitride as a charge trap layer |
Family Cites Families (51)
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-
2010
- 2010-12-20 US US12/973,756 patent/US9412598B2/en active Active
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2011
- 2011-12-19 CN CN201180067895.5A patent/CN103380488B/zh active Active
- 2011-12-19 WO PCT/US2011/065930 patent/WO2012087978A2/en active Application Filing
- 2011-12-19 EP EP11850857.1A patent/EP2656381A4/en not_active Withdrawn
- 2011-12-19 CN CN201710028767.9A patent/CN106847686B/zh active Active
- 2011-12-19 KR KR1020137019143A patent/KR101983682B1/ko active IP Right Grant
- 2011-12-19 JP JP2013544874A patent/JP5774720B2/ja active Active
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- 2015-07-01 JP JP2015132867A patent/JP6039757B2/ja active Active
Also Published As
Publication number | Publication date |
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JP5774720B2 (ja) | 2015-09-09 |
CN106847686A (zh) | 2017-06-13 |
JP2015173298A (ja) | 2015-10-01 |
KR101983682B1 (ko) | 2019-05-29 |
EP2656381A2 (en) | 2013-10-30 |
CN103380488A (zh) | 2013-10-30 |
WO2012087978A2 (en) | 2012-06-28 |
US9412598B2 (en) | 2016-08-09 |
US20120153377A1 (en) | 2012-06-21 |
EP2656381A4 (en) | 2017-11-01 |
JP2013546206A (ja) | 2013-12-26 |
CN106847686B (zh) | 2020-04-24 |
WO2012087978A3 (en) | 2012-09-27 |
CN103380488B (zh) | 2017-02-08 |
KR20140003492A (ko) | 2014-01-09 |
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