JP6032963B2 - Ｓｏｉ基板、ｓｏｉ基板の製造方法および半導体装置の製造方法 - Google Patents

Ｓｏｉ基板、ｓｏｉ基板の製造方法および半導体装置の製造方法 Download PDF

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Publication number
JP6032963B2
JP6032963B2 JP2012138384A JP2012138384A JP6032963B2 JP 6032963 B2 JP6032963 B2 JP 6032963B2 JP 2012138384 A JP2012138384 A JP 2012138384A JP 2012138384 A JP2012138384 A JP 2012138384A JP 6032963 B2 JP6032963 B2 JP 6032963B2
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region
silicon
nitrogen concentration
soi substrate
insulating
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JP2012138384A
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Japanese (ja)
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JP2014003194A (ja
JP2014003194A5 (https=
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和夫 國米
和夫 國米
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Canon Inc
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Canon Inc
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Priority to JP2012138384A priority Critical patent/JP6032963B2/ja
Priority to US13/921,063 priority patent/US9059087B2/en
Publication of JP2014003194A publication Critical patent/JP2014003194A/ja
Publication of JP2014003194A5 publication Critical patent/JP2014003194A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/014—Manufacture or treatment of image sensors covered by group H10F39/12 of CMOS image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H10P10/12—Bonding of semiconductor wafers or semiconductor substrates to semiconductor wafers or semiconductor substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1922—Preparing SOI wafers using silicon etch back techniques, e.g. BESOI or ELTRAN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers

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  • Solid State Image Pick-Up Elements (AREA)
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JP2012138384A 2012-06-20 2012-06-20 Ｓｏｉ基板、ｓｏｉ基板の製造方法および半導体装置の製造方法 Expired - Fee Related JP6032963B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2012138384A JP6032963B2 (ja) 2012-06-20 2012-06-20 Ｓｏｉ基板、ｓｏｉ基板の製造方法および半導体装置の製造方法
US13/921,063 US9059087B2 (en) 2012-06-20 2013-06-18 SOI substrate, method for manufacturing SOI substrate, and method for manufacturing semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012138384A JP6032963B2 (ja) 2012-06-20 2012-06-20 Ｓｏｉ基板、ｓｏｉ基板の製造方法および半導体装置の製造方法

Publications (3)

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JP2014003194A JP2014003194A (ja) 2014-01-09
JP2014003194A5 JP2014003194A5 (https=) 2015-07-23
JP6032963B2 true JP6032963B2 (ja) 2016-11-30

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JP2012138384A Expired - Fee Related JP6032963B2 (ja) 2012-06-20 2012-06-20 Ｓｏｉ基板、ｓｏｉ基板の製造方法および半導体装置の製造方法

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US (1) US9059087B2 (https=)
JP (1) JP6032963B2 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106611697B (zh) * 2015-10-26 2019-11-05 中芯国际集成电路制造(上海)有限公司 半导体结构的形成方法
JP6299835B1 (ja) 2016-10-07 2018-03-28 株式会社Sumco エピタキシャルシリコンウェーハおよびエピタキシャルシリコンウェーハの製造方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4507395B2 (ja) 2000-11-30 2010-07-21 セイコーエプソン株式会社 電気光学装置用素子基板の製造方法
US6583440B2 (en) 2000-11-30 2003-06-24 Seiko Epson Corporation Soi substrate, element substrate, semiconductor device, electro-optical apparatus, electronic equipment, method of manufacturing the soi substrate, method of manufacturing the element substrate, and method of manufacturing the electro-optical apparatus
JP4048048B2 (ja) * 2001-12-18 2008-02-13 東京エレクトロン株式会社 基板処理方法
US7906441B2 (en) * 2003-05-13 2011-03-15 Texas Instruments Incorporated System and method for mitigating oxide growth in a gate dielectric
JP2005079389A (ja) * 2003-09-01 2005-03-24 Sumitomo Mitsubishi Silicon Corp 貼り合わせウェーハの分離方法及びその分離用ボート
JP2006278531A (ja) * 2005-03-28 2006-10-12 Toshiba Corp 工程管理システム、工程管理方法及び半導体装置の製造方法
KR101440930B1 (ko) * 2007-04-20 2014-09-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Ｓｏｉ 기판의 제작방법
US8617954B2 (en) * 2007-10-09 2013-12-31 Texas Instruments Incorporated Formation of nitrogen containing dielectric layers having an improved nitrogen distribution
US7799658B2 (en) 2007-10-10 2010-09-21 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor substrate and method for manufacturing semiconductor device
JP5700617B2 (ja) 2008-07-08 2015-04-15 株式会社半導体エネルギー研究所 Ｓｏｉ基板の作製方法
JP5478166B2 (ja) * 2008-09-11 2014-04-23 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2010114409A (ja) * 2008-10-10 2010-05-20 Sony Corp Ｓｏｉ基板とその製造方法、固体撮像装置とその製造方法、および撮像装置
JP5356872B2 (ja) * 2009-03-18 2013-12-04 パナソニック株式会社 個体撮像装置の製造方法
JP2011014673A (ja) 2009-07-01 2011-01-20 Panasonic Corp Ｓｏｉ基板とその製造方法およびそれを用いた固体撮像装置の製造方法
JP2011077504A (ja) * 2009-09-02 2011-04-14 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JP5306123B2 (ja) * 2009-09-11 2013-10-02 株式会社東芝 裏面照射型固体撮像装置
JP5715351B2 (ja) * 2010-06-30 2015-05-07 キヤノン株式会社 半導体装置およびその製造方法、ならびに固体撮像装置

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JP2014003194A (ja) 2014-01-09
US9059087B2 (en) 2015-06-16
US20130341755A1 (en) 2013-12-26

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