JP2014003194A5 - - Google Patents

Download PDF

Info

Publication number
JP2014003194A5
JP2014003194A5 JP2012138384A JP2012138384A JP2014003194A5 JP 2014003194 A5 JP2014003194 A5 JP 2014003194A5 JP 2012138384 A JP2012138384 A JP 2012138384A JP 2012138384 A JP2012138384 A JP 2012138384A JP 2014003194 A5 JP2014003194 A5 JP 2014003194A5
Authority
JP
Japan
Prior art keywords
region
soi substrate
silicon
substrate according
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2012138384A
Other languages
English (en)
Japanese (ja)
Other versions
JP6032963B2 (ja
JP2014003194A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2012138384A priority Critical patent/JP6032963B2/ja
Priority claimed from JP2012138384A external-priority patent/JP6032963B2/ja
Priority to US13/921,063 priority patent/US9059087B2/en
Publication of JP2014003194A publication Critical patent/JP2014003194A/ja
Publication of JP2014003194A5 publication Critical patent/JP2014003194A5/ja
Application granted granted Critical
Publication of JP6032963B2 publication Critical patent/JP6032963B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2012138384A 2012-06-20 2012-06-20 Ｓｏｉ基板、ｓｏｉ基板の製造方法および半導体装置の製造方法 Expired - Fee Related JP6032963B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2012138384A JP6032963B2 (ja) 2012-06-20 2012-06-20 Ｓｏｉ基板、ｓｏｉ基板の製造方法および半導体装置の製造方法
US13/921,063 US9059087B2 (en) 2012-06-20 2013-06-18 SOI substrate, method for manufacturing SOI substrate, and method for manufacturing semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012138384A JP6032963B2 (ja) 2012-06-20 2012-06-20 Ｓｏｉ基板、ｓｏｉ基板の製造方法および半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JP2014003194A JP2014003194A (ja) 2014-01-09
JP2014003194A5 true JP2014003194A5 (https=) 2015-07-23
JP6032963B2 JP6032963B2 (ja) 2016-11-30

Family

ID=49773715

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012138384A Expired - Fee Related JP6032963B2 (ja) 2012-06-20 2012-06-20 Ｓｏｉ基板、ｓｏｉ基板の製造方法および半導体装置の製造方法

Country Status (2)

Country Link
US (1) US9059087B2 (https=)
JP (1) JP6032963B2 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106611697B (zh) * 2015-10-26 2019-11-05 中芯国际集成电路制造(上海)有限公司 半导体结构的形成方法
JP6299835B1 (ja) 2016-10-07 2018-03-28 株式会社Sumco エピタキシャルシリコンウェーハおよびエピタキシャルシリコンウェーハの製造方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4507395B2 (ja) 2000-11-30 2010-07-21 セイコーエプソン株式会社 電気光学装置用素子基板の製造方法
US6583440B2 (en) 2000-11-30 2003-06-24 Seiko Epson Corporation Soi substrate, element substrate, semiconductor device, electro-optical apparatus, electronic equipment, method of manufacturing the soi substrate, method of manufacturing the element substrate, and method of manufacturing the electro-optical apparatus
JP4048048B2 (ja) * 2001-12-18 2008-02-13 東京エレクトロン株式会社 基板処理方法
US7906441B2 (en) * 2003-05-13 2011-03-15 Texas Instruments Incorporated System and method for mitigating oxide growth in a gate dielectric
JP2005079389A (ja) * 2003-09-01 2005-03-24 Sumitomo Mitsubishi Silicon Corp 貼り合わせウェーハの分離方法及びその分離用ボート
JP2006278531A (ja) * 2005-03-28 2006-10-12 Toshiba Corp 工程管理システム、工程管理方法及び半導体装置の製造方法
KR101440930B1 (ko) * 2007-04-20 2014-09-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Ｓｏｉ 기판의 제작방법
US8617954B2 (en) * 2007-10-09 2013-12-31 Texas Instruments Incorporated Formation of nitrogen containing dielectric layers having an improved nitrogen distribution
US7799658B2 (en) 2007-10-10 2010-09-21 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor substrate and method for manufacturing semiconductor device
JP5700617B2 (ja) 2008-07-08 2015-04-15 株式会社半導体エネルギー研究所 Ｓｏｉ基板の作製方法
JP5478166B2 (ja) * 2008-09-11 2014-04-23 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2010114409A (ja) * 2008-10-10 2010-05-20 Sony Corp Ｓｏｉ基板とその製造方法、固体撮像装置とその製造方法、および撮像装置
JP5356872B2 (ja) * 2009-03-18 2013-12-04 パナソニック株式会社 個体撮像装置の製造方法
JP2011014673A (ja) 2009-07-01 2011-01-20 Panasonic Corp Ｓｏｉ基板とその製造方法およびそれを用いた固体撮像装置の製造方法
JP2011077504A (ja) * 2009-09-02 2011-04-14 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JP5306123B2 (ja) * 2009-09-11 2013-10-02 株式会社東芝 裏面照射型固体撮像装置
JP5715351B2 (ja) * 2010-06-30 2015-05-07 キヤノン株式会社 半導体装置およびその製造方法、ならびに固体撮像装置

Similar Documents

Publication Publication Date Title
JP2012216796A5 (https=)
JP2009135465A5 (https=)
JP2013070070A5 (ja) 半導体装置及びその作製方法
JP2011035387A5 (ja) 半導体装置の作製方法
JP2009010353A5 (https=)
JP2012160714A5 (ja) 半導体装置の作製方法
JP2009111375A5 (https=)
JP2012160716A5 (https=)
JP2010534935A5 (https=)
JP2012084860A5 (https=)
JP2011077514A5 (https=)
JP2011029627A5 (https=)
JP2009111362A5 (https=)
JP2012009838A5 (ja) 半導体装置の作製方法
JP2014212312A5 (ja) 半導体装置の作製方法
JP2013016862A5 (https=)
JP2010239131A5 (https=)
WO2008081724A1 (ja) 絶縁膜の形成方法および半導体装置の製造方法
JP2012049516A5 (https=)
JP2015109343A5 (https=)
JP2010251632A5 (https=)
JP2013153160A5 (ja) 半導体装置の作製方法
JP2009076706A5 (https=)
JP2012004275A5 (https=)
JP2013175717A5 (https=)