JP6031059B2 - 半導体装置、積層型半導体装置、封止後積層型半導体装置、及びこれらの製造方法 - Google Patents

半導体装置、積層型半導体装置、封止後積層型半導体装置、及びこれらの製造方法 Download PDF

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JP6031059B2
JP6031059B2 JP2014071301A JP2014071301A JP6031059B2 JP 6031059 B2 JP6031059 B2 JP 6031059B2 JP 2014071301 A JP2014071301 A JP 2014071301A JP 2014071301 A JP2014071301 A JP 2014071301A JP 6031059 B2 JP6031059 B2 JP 6031059B2
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insulating layer
semiconductor device
electrode
semiconductor element
forming
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JP2014071301A
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Japanese (ja)
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JP2015195238A5 (enExample
JP2015195238A (ja
Inventor
竹村 勝也
勝也 竹村
曽我 恭子
恭子 曽我
淺井 聡
聡 淺井
和紀 近藤
和紀 近藤
菅生 道博
道博 菅生
加藤 英人
英人 加藤
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Shin Etsu Chemical Co Ltd
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Shin Etsu Chemical Co Ltd
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Application filed by Shin Etsu Chemical Co Ltd filed Critical Shin Etsu Chemical Co Ltd
Priority to JP2014071301A priority Critical patent/JP6031059B2/ja
Priority to PCT/JP2015/001433 priority patent/WO2015151426A1/ja
Priority to US15/126,116 priority patent/US10141272B2/en
Priority to EP15772875.9A priority patent/EP3128548B1/en
Priority to CN201580018117.5A priority patent/CN106415823B/zh
Priority to KR1020167027165A priority patent/KR102263433B1/ko
Priority to TW104110257A priority patent/TWI648438B/zh
Publication of JP2015195238A publication Critical patent/JP2015195238A/ja
Publication of JP2015195238A5 publication Critical patent/JP2015195238A5/ja
Publication of JP6031059B2 publication Critical patent/JP6031059B2/ja
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