JP6028732B2 - フォトレジスト組成物 - Google Patents

フォトレジスト組成物 Download PDF

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Publication number
JP6028732B2
JP6028732B2 JP2013528980A JP2013528980A JP6028732B2 JP 6028732 B2 JP6028732 B2 JP 6028732B2 JP 2013528980 A JP2013528980 A JP 2013528980A JP 2013528980 A JP2013528980 A JP 2013528980A JP 6028732 B2 JP6028732 B2 JP 6028732B2
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Japan
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group
structural unit
represented
formula
photoresist composition
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Japanese (ja)
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JPWO2013024756A1 (ja
Inventor
拡 宮田
拡 宮田
研 丸山
研 丸山
浩光 中島
浩光 中島
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JSR Corp
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JSR Corp
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
JP2013528980A 2011-08-16 2012-08-07 フォトレジスト組成物 Active JP6028732B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2011178153 2011-08-16
JP2011178153 2011-08-16
PCT/JP2012/070125 WO2013024756A1 (ja) 2011-08-16 2012-08-07 フォトレジスト組成物

Publications (2)

Publication Number Publication Date
JPWO2013024756A1 JPWO2013024756A1 (ja) 2015-03-05
JP6028732B2 true JP6028732B2 (ja) 2016-11-16

Family

ID=47715076

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013528980A Active JP6028732B2 (ja) 2011-08-16 2012-08-07 フォトレジスト組成物

Country Status (3)

Country Link
JP (1) JP6028732B2 (ko)
KR (1) KR101978532B1 (ko)
WO (1) WO2013024756A1 (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20230114441A1 (en) * 2021-07-16 2023-04-13 Shin-Etsu Chemical Co., Ltd. Negative resist composition and pattern forming process

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014222338A (ja) * 2013-05-14 2014-11-27 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、及びそれを用いたパターン形成方法
JP6307940B2 (ja) * 2014-03-05 2018-04-11 住友化学株式会社 樹脂組成物及びレジスト組成物
JP2015197509A (ja) * 2014-03-31 2015-11-09 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物の製造方法及び感活性光線性又は感放射線性樹脂組成物
JP6520753B2 (ja) * 2016-02-19 2019-05-29 信越化学工業株式会社 ポジ型レジスト材料、及びパターン形成方法
JP6974982B2 (ja) * 2016-09-06 2021-12-01 住友化学株式会社 塩、レジスト組成物及びレジストパターンの製造方法
JP6841183B2 (ja) * 2017-07-27 2021-03-10 信越化学工業株式会社 スルホニウム塩、ポリマー、レジスト組成物、及びパターン形成方法
JP7099256B2 (ja) * 2018-11-02 2022-07-12 信越化学工業株式会社 重合体の製造方法、及び重合体
CN114262404B (zh) * 2020-09-16 2023-06-30 宁波南大光电材料有限公司 光敏树脂及应用该光敏树脂的光刻胶组合物
WO2022056700A1 (zh) * 2020-09-16 2022-03-24 宁波南大光电材料有限公司 光敏树脂及应用该光敏树脂的光刻胶组合物
CN112485960B (zh) * 2020-11-27 2023-02-03 上海新阳半导体材料股份有限公司 厚膜型光刻胶组合物及其制备方法和应用
CN112485965B (zh) * 2020-11-27 2023-02-03 上海新阳半导体材料股份有限公司 一种厚膜型KrF光刻胶组合物，其制备方法及应用
CN112346300B (zh) * 2020-11-27 2022-10-18 上海新阳半导体材料股份有限公司 KrF厚膜光刻胶树脂、其制备方法和涂覆基材
CN112485966B (zh) * 2020-11-27 2022-10-18 上海新阳半导体材料股份有限公司 一种248nm厚膜光刻胶树脂及其制备方法和应用
CN112346301B (zh) * 2020-11-27 2023-02-03 上海新阳半导体材料股份有限公司 Duv厚膜光刻胶树脂及其制备方法和涂覆基材
CN112485964B (zh) * 2020-11-27 2023-02-03 上海新阳半导体材料股份有限公司 一种厚膜型248nm光刻胶组合物，其制备方法和涂覆基材
CN112485962B (zh) * 2020-11-27 2022-10-21 上海新阳半导体材料股份有限公司 KrF厚膜型光刻胶组合物、其制备方法和涂覆基材
CN112485961B (zh) * 2020-11-27 2022-10-21 上海新阳半导体材料股份有限公司 厚膜型duv光刻胶组合物及其制备方法和应用
TW202346263A (zh) * 2022-05-23 2023-12-01 日商Jsr 股份有限公司 感放射線性樹脂組成物及圖案形成方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4491628A (en) 1982-08-23 1985-01-01 International Business Machines Corporation Positive- and negative-working resist compositions with acid generating photoinitiator and polymer with acid labile groups pendant from polymer backbone
JP5449675B2 (ja) * 2007-09-21 2014-03-19 富士フイルム株式会社 感光性組成物、該感光性組成物を用いたパターン形成方法及び該感光性組成物に用いられる化合物
KR20100071088A (ko) * 2007-10-29 2010-06-28 제이에스알 가부시끼가이샤 감방사선성 수지 조성물 및 중합체
JP4822020B2 (ja) * 2007-12-17 2011-11-24 信越化学工業株式会社 ポジ型レジスト材料及びこれを用いたパターン形成方法
EP2101217B1 (en) * 2008-03-14 2011-05-11 Shin-Etsu Chemical Co., Ltd. Sulfonium salt-containing polymer, resist compositon, and patterning process
TWI400226B (zh) * 2008-10-17 2013-07-01 Shinetsu Chemical Co 具有聚合性陰離子之鹽及高分子化合物、光阻劑材料及圖案形成方法
WO2010119910A1 (ja) * 2009-04-15 2010-10-21 Jsr株式会社 感放射線性樹脂組成物、それに用いる重合体及びそれに用いる化合物
JP5126182B2 (ja) * 2009-04-15 2013-01-23 Ｊｓｒ株式会社 感放射線性樹脂組成物、それに用いる重合体およびそれに用いる化合物
JP2011076084A (ja) * 2009-09-07 2011-04-14 Sumitomo Chemical Co Ltd レジスト組成物及びレジストパターンの製造方法
JP5470053B2 (ja) * 2010-01-05 2014-04-16 東京応化工業株式会社 ポジ型レジスト組成物、レジストパターン形成方法
JP5708082B2 (ja) * 2010-03-24 2015-04-30 信越化学工業株式会社 パターン形成方法及びネガ型レジスト組成物
JP5622448B2 (ja) * 2010-06-15 2014-11-12 東京応化工業株式会社 レジスト組成物、レジストパターン形成方法、高分子化合物、化合物
JP5454458B2 (ja) 2010-11-25 2014-03-26 信越化学工業株式会社 ポジ型レジスト材料及びパターン形成方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20230114441A1 (en) * 2021-07-16 2023-04-13 Shin-Etsu Chemical Co., Ltd. Negative resist composition and pattern forming process

Also Published As

Publication number Publication date
KR101978532B1 (ko) 2019-05-14
KR20140050053A (ko) 2014-04-28
JPWO2013024756A1 (ja) 2015-03-05
WO2013024756A1 (ja) 2013-02-21

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