JP6028233B2 - 光電変換素子および光電変換装置 - Google Patents

光電変換素子および光電変換装置 Download PDF

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Publication number
JP6028233B2
JP6028233B2 JP2011177460A JP2011177460A JP6028233B2 JP 6028233 B2 JP6028233 B2 JP 6028233B2 JP 2011177460 A JP2011177460 A JP 2011177460A JP 2011177460 A JP2011177460 A JP 2011177460A JP 6028233 B2 JP6028233 B2 JP 6028233B2
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semiconductor layer
type semiconductor
photoelectric conversion
substrate
layer
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JP2011177460A
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Japanese (ja)
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JP2013012696A5 (https=
JP2013012696A (ja
Inventor
山田　泰弘
泰弘 山田
田中　勉
田中　　勉
真人 高徳
真人 高徳
伊藤　良一
良一 伊藤
千田　みちる
みちる 千田
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Sony Semiconductor Solutions Corp
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Sony Semiconductor Solutions Corp
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Priority to JP2011177460A priority Critical patent/JP6028233B2/ja
Priority to CN201210153336.2A priority patent/CN102800735B/zh
Priority to US13/474,061 priority patent/US9312421B2/en
Publication of JP2013012696A publication Critical patent/JP2013012696A/ja
Publication of JP2013012696A5 publication Critical patent/JP2013012696A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/223—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PIN barrier
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/189—X-ray, gamma-ray or corpuscular radiation imagers
    • H10F39/1898—Indirect radiation image sensors, e.g. using luminescent members
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/331—Coatings for devices having potential barriers for filtering or shielding light, e.g. multicolour filters for photodetectors
    • H10F77/334—Coatings for devices having potential barriers for filtering or shielding light, e.g. multicolour filters for photodetectors for shielding light, e.g. light blocking layers or cold shields for infrared detectors

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  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
JP2011177460A 2011-05-27 2011-08-15 光電変換素子および光電変換装置 Expired - Fee Related JP6028233B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2011177460A JP6028233B2 (ja) 2011-05-27 2011-08-15 光電変換素子および光電変換装置
CN201210153336.2A CN102800735B (zh) 2011-05-27 2012-05-17 光电转换元件和光电转换装置
US13/474,061 US9312421B2 (en) 2011-05-27 2012-05-17 Photoelectric conversion element and photoelectric converter

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2011119502 2011-05-27
JP2011119502 2011-05-27
JP2011177460A JP6028233B2 (ja) 2011-05-27 2011-08-15 光電変換素子および光電変換装置

Publications (3)

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JP2013012696A JP2013012696A (ja) 2013-01-17
JP2013012696A5 JP2013012696A5 (https=) 2014-09-18
JP6028233B2 true JP6028233B2 (ja) 2016-11-16

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JP2011177460A Expired - Fee Related JP6028233B2 (ja) 2011-05-27 2011-08-15 光電変換素子および光電変換装置

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Country Link
US (1) US9312421B2 (https=)
JP (1) JP6028233B2 (https=)
CN (1) CN102800735B (https=)

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JP5439984B2 (ja) * 2009-07-03 2014-03-12 ソニー株式会社 光電変換装置および放射線撮像装置
CN103219431A (zh) * 2013-04-19 2013-07-24 京东方科技集团股份有限公司 光电二极管及其制造方法、x射线探测器基板及其制造方法
JP2015053415A (ja) 2013-09-09 2015-03-19 株式会社東芝 フォトダイオード
JP2015177155A (ja) * 2014-03-18 2015-10-05 セイコーエプソン株式会社 光電変換装置および電子機器
KR101554822B1 (ko) 2014-04-18 2015-09-22 하이디스 테크놀로지 주식회사 디지털 엑스레이 디텍터용 pin 다이오드 및 그 제조 방법
KR102344782B1 (ko) 2014-06-13 2021-12-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 입력 장치 및 입출력 장치
JP2016048168A (ja) * 2014-08-27 2016-04-07 ソニー株式会社 放射線検出器、撮像装置、および撮像システム
CN104681655A (zh) * 2015-01-12 2015-06-03 京东方科技集团股份有限公司 一种探测基板及其制备方法、探测器
CN104992948B (zh) * 2015-06-03 2018-07-06 京东方科技集团股份有限公司 一种薄膜晶体管、阵列基板及其制作方法
JP6578930B2 (ja) * 2015-12-18 2019-09-25 セイコーエプソン株式会社 光電変換素子の製造方法、光電変換素子および光電変換装置
CN105810765B (zh) 2016-03-21 2017-08-11 京东方科技集团股份有限公司 Pin光电二极管、x射线探测像元、装置及其探测方法
KR102421726B1 (ko) 2017-09-25 2022-07-15 삼성전자주식회사 이미지 센서
CN109065558B (zh) * 2018-08-09 2021-10-12 京东方科技集团股份有限公司 一种背板及其制作方法、检测装置
CN109192701B (zh) * 2018-08-31 2020-12-08 京东方科技集团股份有限公司 阵列基板及其制备方法、显示装置
CN109686808B (zh) * 2018-12-27 2021-07-23 厦门天马微电子有限公司 二极管及其制作方法、阵列基板、显示面板
JP6775641B1 (ja) 2019-06-18 2020-10-28 Ｎｔｔエレクトロニクス株式会社 受光素子および光回路の遮光構造
CN114342079B (zh) * 2019-08-30 2025-01-07 株式会社日本显示器 检测装置
JP7446785B2 (ja) * 2019-11-18 2024-03-11 株式会社ジャパンディスプレイ 検出装置及び表示装置
JP7446786B2 (ja) * 2019-11-18 2024-03-11 株式会社ジャパンディスプレイ 検出装置及び表示装置
JP7496208B2 (ja) * 2019-12-23 2024-06-06 株式会社ジャパンディスプレイ 検出装置
JP7443077B2 (ja) 2020-02-03 2024-03-05 株式会社ジャパンディスプレイ 検出装置
JP2022029179A (ja) * 2020-08-04 2022-02-17 株式会社ジャパンディスプレイ 検出装置
JP2022062644A (ja) * 2020-10-08 2022-04-20 株式会社ジャパンディスプレイ 検出装置
WO2022176503A1 (ja) * 2021-02-22 2022-08-25 株式会社ジャパンディスプレイ 検出装置
CN113113354B (zh) * 2021-03-18 2022-04-08 武汉华星光电技术有限公司 光学器件及其制备方法、显示面板

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002050754A (ja) * 2000-05-08 2002-02-15 Canon Inc 半導体装置とその製造方法、放射線検出装置とそれを用いた放射線検出システム
JP2003262674A (ja) * 2002-03-11 2003-09-19 Canon Inc 画像検出器
GB0219771D0 (en) * 2002-08-24 2002-10-02 Koninkl Philips Electronics Nv Manufacture of electronic devices comprising thin-film circuit elements
JP2008040488A (ja) * 2006-07-12 2008-02-21 Toshiba Matsushita Display Technology Co Ltd 液晶表示装置
JP2008277710A (ja) 2007-05-07 2008-11-13 Sony Corp 受光素子およびそれを備えた表示装置
JP2009229502A (ja) * 2008-03-19 2009-10-08 Sony Corp 表示装置、および、その製造方法
JP2010056397A (ja) * 2008-08-29 2010-03-11 Fujifilm Corp Ｘ線検出素子
JP5439984B2 (ja) * 2009-07-03 2014-03-12 ソニー株式会社 光電変換装置および放射線撮像装置
JP5481127B2 (ja) * 2009-08-19 2014-04-23 株式会社ジャパンディスプレイ センサ素子およびその駆動方法、センサ装置、ならびに入力機能付き表示装置および電子機器

Also Published As

Publication number Publication date
CN102800735B (zh) 2017-10-24
CN102800735A (zh) 2012-11-28
US20120299070A1 (en) 2012-11-29
US9312421B2 (en) 2016-04-12
JP2013012696A (ja) 2013-01-17

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